DATA SH EET
Product data sheet
Supersedes data of 1999 May 28
2004 Jan 16
DISCRETE SEMICONDUCTORS
BC859; BC860
PNP general purpose transistors
2004 Jan 16 2
NXP Semiconductors Product data sheet
PNP general purpose transistors BC859; BC860
FEATURES
Low current (ma x. 10 0 mA)
Low voltage (max. 45 V).
APPLICATIONS
Low noise input stages of audio frequency equip ment.
DESCRIPTION
PNP transistor in a SOT23 plastic package.
NPN complements: BC849 and BC850.
MARKING
Note
1. * = p : Made in Hong Kong .
* = t : Made in Malaysia.
* = W : Made in China.
PINNING
TYPE
NUMBER MARKING
CODE(1) TYPE
NUMBER MARKING
CODE(1)
BC859B 4B* BC860B 4F*
BC859C 4C* BC860C 4G*
PIN DESCRIPTION
1base
2emitter
3collector
Fig.1 Simplified outline (SOT23 ) and symbo l .
handbook, halfpage
21
3
MAM256
Top view
2
3
1
ORDERING INFORMATION
TYPE
NUMBER PACKAGE
NAME DESCRIPTION VERSION
BC859B plast i c sur face mounted p a ckage; 3 leads SOT23
BC859C
BC860B
BC860C
2004 Jan 16 3
NXP Semiconductors Pr oduct data shee t
PNP general purpose transistors BC859; BC860
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed- circuit board.
THERMAL CHARACTE RISTICS
Note
1. Transistor mounted on an FR4 printed- circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base volta ge open emitter
BC859 30 V
BC860 50 V
VCEO collector-emitter voltage open base
BC859 30 V
BC860 45 V
VEBO emitter-base voltage open collector 5 V
ICcollector current (DC) 100 mA
ICM peak collector current 200 mA
IBM peak base current 200 mA
Ptot total power dissipation Tamb 25 °C; note 1 250 mW
Tstg storage temperature 65 +150 °C
Tjjunction temperature 150 °C
Tamb operating ambient temperature 65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth(j-a) thermal resistance from junction to ambient note 1 500 K/W
2004 Jan 16 4
NXP Semiconductors Pr oduct data shee t
PNP general purpose transistors BC859; BC860
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
Notes
1. VBEsat decreases by about 1.7 mV/K with increasing temperature.
2. VBE decreases by about 2 mV/K with increasing temperature.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector cut-off current IE = 0; VCB = 30 V 115 nA
IE = 0; VCB = 30 V; Tj = 150 °C−−−4μA
IEBO emitter cut-off current IC = 0; VEB = 5 V −−−100 nA
hFE DC current gain IC = 2 mA; VCE = 5 V;
see Figs 2 and 3
BC859B; BC860B 220 475
BC859C; BC860 C 420 800
VCEsat collector-emitter saturation
voltage IC = 10 mA; IB = 0.5 mA 75 300 mV
IC = 100 mA; IB = 5 mA 250 650 mV
VBEsat base-emitt er saturatio n voltage IC = 10 mA; IB = 0.5 mA; note 1 700 mV
IC = 100 mA; IB = 5 mA; note 1 850 mV
VBE base-emitter vo ltage IC = 2 mA; VCE = 5 V; note 2 600 650 750 mV
IC = 10 mA; VCE = 5 V; note 2 −−−820 mV
Cccollector capacitance IE = Ie = 0; VCB = 10 V; f = 1 MHz 4.5 pF
Ceemitter cap a citance IC = Ic = 0; VEB = 500 mV; f = 1 MHz 10 pF
fTtransition freque ncy IC = 10 mA; VCE = 5 V; f = 100 MHz 100 MHz
Fnoise figure IC = 200 μA; VCE = 5 V; RS = 2 kΩ;
f = 30 Hz to 15 kHz
BC859B; BC860B;
BC859C; BC860C −−4dB
noise figure IC = 200 μA; VCE = 5 V; RS = 2 kΩ;
f = 1 kHz; B = 200 Hz
BC859B; BC860B;
BC859C; BC860C −−4dB
2004 Jan 16 5
NXP Semiconductors Pr oduct data shee t
PNP general purpose transistors BC859; BC860
Fig.2 DC current gain; typical values.
handbook, full pagewidth
0
300
200
100
400 MBH727
102101
hFE
1IC (mA)
10 103
102
VCE = 5 V
BC859B; BC860B.
Fig.3 DC current gain; typical values.
handbook, full pagewidth
0
300
200
100
600
500
400
MBH728
102101
hFE
1IC (mA)
10 103
102
VCE = 5 V
BC859C; BC860C.
2004 Jan 16 6
NXP Semiconductors Pr oduct data shee t
PNP general purpose transistors BC859; BC860
PACKAGE OUTLINE
UNIT A
1
max. b
p
cDE e
1
H
E
L
p
Qwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
04-11-04
06-03-16
IEC JEDEC JEITA
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
w
M
v
M
A
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface-mounted package; 3 leads SOT2
3
2004 Jan 16 7
NXP Semiconductors Pr oduct data shee t
PNP general purpose transistors BC859; BC860
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document befor e initiating or co mpleting a design.
2. The product s ta tus of device(s) described in this do cument may have ch anged since this docu ment was published
and may differ in case of multiple devices. The latest product status information is available on th e Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the produc t specification.
DISCLAIMERS
General Information in this document is believed to be
accurate and reliable . H ow ev er, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequenc es of use of such informa tio n.
Right to make changes NXP Semiconductors
reserves the right to make changes to information
published in this doc ument, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereo f.
Suitability for use NXP Semiconductors products are
not designed, au thorized or warran ted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in pe rs onal injury, death or seve re
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefor e s uc h inclusion and/or use is at
the customer’s own risk .
Applications Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use witho ut fu rth e r testing or modification .
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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products are sold subject to the general terms and
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http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
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case of any incons istency or conflict between information
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described herein may be subject to export control
regulations. Export might require a prior authorization from
national author ities.
Quick refer ence data The Quick reference data is an
extract of th e product data given in the Limiting values an d
Characteristics sections of this document, and as such is
not complete, exhaus tive or legally binding.
NXP Semiconductors
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© NXP B.V. 2009
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Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimer s. No changes were made to the tech nical content, except for package outline
drawings which were updated to the latest version.
Printed in The Netherlands R75/05/pp8 Date of release: 2004 Jan 16 Document order number: 9397 750 12398