HiPerFASTTM IGBT with Diode ISOPLUS247TM VCES IC25 IXGR 32N60CD1 = 600 V = 45 A = 2.7 V = 55 ns VCE(SAT) tfi(typ) (Electrically Isolated Backside) Preliminary data sheet Maximum Ratings ISOPLUS 247TM (IXGR) E 153432 Symbol Test Conditions VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C; RGE = 1 M 600 V VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25C 45 A IC90 TC = 90C 28 A ICM TC = 25C, 1 ms 120 A SSOA (RBSOA) VGE = 15 V, TVJ = 125C, RG = 10 Clamped inductive load, L = 100 H ICM = 64 @ 0.8 VCES A PC TC = 25C 140 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C Features 300 C z TJ Maximum Lead and Tab temperature for soldering 1.6 mm (0.062 in.) from case for 10 s VISOL 50/60 Hz, RMS G G = Gate, E = Emitter, 2500 V~ z z Weight 5 g E Isolated backside* C = Collector, TAB = Collector * Patent pending z t = 1 min leads-to housing C z DCB Isolated mounting tab Meets TO-247AD package Outline High current handling capability Latest generation HDMOSTM process MOS Gate turn-on - drive simplicity Applications Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. z z z = 250 A, VCE = VGE VGE(th) IC ICES VCE = 600V VGE = 0 V IGES VCE = 0 V, VGE = 20 V VCE(sat) IC = IT, VGE = 15 V Note 1 (c) 2004 IXYS All rights reserved 2.5 TJ = 25C TJ = 125C 2.3 5.0 V 200 3 A mA 100 nA 2.7 V z z Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies AC motor speed control DC servo and robot drives DC choppers Advantages z z z Easy assembly High power density Very fast switching speeds for high frequency applications DS98631D(06/04) IXGR 32N60CD1 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. gfs IC = IT; VCE = 10 V, Pulse test, t 300 s, duty cycle 2 % Cies Coes S 2700 pF 240 pF Cres 50 pF Qg 110 nC 22 nC 40 nC ns Qge VCE = 25 V, VGE = 0 V, f = 1 MHz 25 IC = IT, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) Inductive load, TJ = 25C 25 tri IC = IT, VGE = 15 V, L = 100 H, VCE = 0.8 VCES, RG = Roff = 4.7 20 td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff 85 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG Inductive load, TJ = 125C IC = IT, VGE = 15 V, L = 100 H VCE = 0.8 VCES, RG = Roff = 4.7 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG RthJC RthCK Reverse Diode (FRED) ISOPLUS 247 OUTLINE ns 170 ns 55 ns 0.32 0.75 mJ 25 ns 25 ns 1 mJ 110 ns 100 ns 0.85 mJ 0.15 0.90 K/W K/W 1 Gate, 2 Drain (Collector) 3 Source (Emitter) 4 no connection Dim. A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. Symbol Test Conditions VF IF = IT, VGE = 0 V, Pulse test t 300 s, duty cycle d 2 % IRM trr IF = IT, VGE = 0 V, -diF/dt = 100 A/s VR = 100 V TJ = 100C IF = 1 A; -di/dt = 100 A/s; VR = 30 V TJ = 25C TJ = 150C TJ = 25C 1.6 2.5 6 100 25 V V A ns ns 1.15 K/W RthJC Note: 1. IT = 32A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 IXGR 32N60CD1 200 100 VGE = 15V 13V TJ = 25C VGE = 15V 160 IC - Amperes 80 IC - Amperes TJ = 25C 9V 11V 60 40 7V 13V 11V 120 9V 80 7V 40 20 5V 0 0 0 1 2 3 4 5 5V 0 2 4 8 10 VCE - Volts VCE - Volts Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics 100 1.50 11V TJ = 125C VGE = 15V VGE = 15V VCE (sat) - Normalized 9V 13V 80 IC - Amperes 6 60 7V 40 20 IC = 64A 1.25 IC = 32A 1.00 IC = 16A 0.75 5V 0 0 1 2 3 4 0.50 5 25 50 75 VCE - Volts 125 150 TJ - Degrees C Fig. 4. Temperature Dependence of VCE(sat) Fig. 3. High Temperature Output Characteristics 100 100 10000 VCE = 10V f = 1Mhz Ciss Capacitance - pF IC - Amperes 80 60 40 TJ = 125C 1000 Coss Crss 100 20 TJ = 25C 0 3 4 5 6 7 VGE - Volts Fig. 5. Admittance Curves (c) 2004 IXYS All rights reserved 8 9 10 10 0 5 10 15 20 25 30 VCE-Volts Fig. 6. Capacitance Curves 35 40 IXGR 32N60CD1 1.00 TJ = 125C 4 3 3 8 TJ = 125C 2 0.50 1 0.25 IC = 64A E(OFF) 2 4 E(ON) 0 20 40 0 0 60 80 0 10 IC = 16A 20 2 E(OFF) 30 40 50 0 60 RG - Ohms IC - Amperes Fig. 7. Dependence of EON and EOFF on IC. Fig. 8. Dependence of EON and EOFF on RG. 16 100 64 IC = 32A VCE = 300V IC - Amperes 12 VGE - Volts E(OFF) IC = 32A 1 E(ON) 0.00 6 E(ON) 8 TJ = 125C 10 RG = 4.7 dV/dt < 5V/ns 1 4 0 0 25 50 75 100 0.1 125 0 100 200 300 400 500 600 VCE - Volts Qg - nanocoulombs Fig. 10. Turn-off Safe Operating Area Fig. 9. Gate Charge 1 D=0.5 ZthJC (K/W) D=0.2 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D = Duty Cycle Single pulse 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds Fig. 11. Transient Thermal Resistance IXYS reserves the right to change limits, test conditions, and dimensions. 0.1 1 10 E(OFF) - millijoules E(ON) E(OFF) - milliJoules 0.75 E(ON) - millijoules RG = 10 E(ON) - millijoules 4 E(OFF) IXGR 32N60CD1 60 A TVJ= 100C nC VR = 300V 50 IF 800 Qr 600 TVJ=150C T = 100C A VVJ = 300V R 25 IF= 60A IRM IF= 30A 20 IF= 15A IF= 60A IF= 30A IF= 15A 40 30 30 1000 15 TVJ=100C 400 20 10 TVJ=25C 200 10 0 0 1 2 5 0 100 3 V A/s 1000 -diF/dt VF Fig. 12. Forward current IF versus VF Fig. 13. Reverse recovery charge Qr versus -diF/dt 90 2.0 V VFR 15 trr 1.5 Kf 80 IF= 60A IF= 30A IF= 15A 1.0 IRM 0 200 400 600 A/s 800 1000 -diF/dt Fig. 14. Peak reverse current IRM versus -diF/dt 20 TVJ= 100C VR = 300V ns 0 1.00 TVJ= 100C IF = 30A s tfr 0.75 VFR tfr 10 0.50 5 0.25 70 0.5 0.0 Qr 0 40 80 120 C 160 60 0 200 TVJ 400 600 800 1000 A/s 0 200 400 -diF/dt Fig. 15. Dynamic parameters Qr, IRM versus TVJ Fig. 16. Recovery time trr versus -diF/dt 10 0.00 600 A/s 800 1000 diF/dt Fig. 17. Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: K/W i 1 1 2 3 4 ZthJC 0.1 0.01 0.001 0.0001 0.00001 0 DSEP 2x31-06B 0.0001 0.001 0.01 Fig. 18. Transient thermal resistance junction to case (c) 2004 IXYS All rights reserved 0.1 s t 1 Rthi (K/W) ti (s) 0.436 0.482 0.117 0.115 0.0055 0.0092 0.0007 0.0418