APTC90DSK12T1G
APTC90DSK12T1G – Rev 1 October, 2012
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Pins 3/4 must be shorted together
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Symbol Parameter Max ratings Unit
VDSS Drain - Source Breakdown Voltage 900 V
Tc = 25°C 30
ID Continuous Drain Current Tc = 80°C 23
IDM Pulsed Drain current 75
A
VGS Gate - Source Voltage ±20 V
RDSon Drain - Source ON Resistance 120 m
PD Maximum Power Dissipation Tc = 25°C 250 W
IAR Avalanche current (repetitive and non repetitive) 8.8 A
EAR Repetitive Avalanche Energy 2.9
EAS Single Pulse Avalanche Energy 1940 mJ
Application
AC and DC motor control
Switched Mode Power Supplies
Features
- Ultra low RDSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
- Very rugged
Very low stray inductance
- Symmetrical design
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
Each leg can be easily paralleled to achieve a single
buck of twice the current capability
RoHS Compliant
Dual Buck chopper
Super Junction MOSFET
Power Module
VDSS = 900V
RDSon = 120m max @ Tj = 25°C
ID = 30A @ Tc = 25°C
APTC90DSK12T1G
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All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
VGS = 0V,VDS = 900V Tj = 25°C 100
IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 900V Tj = 125°C 500 µA
RDS(on) Drain – Source on Resistance VGS = 10V, ID = 26A 100 120 m
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 3mA 2.5 3 3.5 V
IGSS Gate – Source Leakage Current VGS = ±20 V, VDS = 0V 100 nA
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Ciss Input Capacitance 6.8
Coss Output Capacitance
VGS = 0V ; VDS = 100V
f = 1MHz 0.33 nF
Qg Total gate Charge 270
Qgs Gate – Source Charge 32
Qgd Gate – Drain Charge
VGS = 10V
VBus = 400V
ID = 26A 115
nC
Td(on) Turn-on Delay Time 70
Tr Rise Time 20
Td(off) Turn-off Delay Time 400
Tf Fall Time
Inductive Switching (125°C)
VGS = 10V
VBus = 600V
ID = 26A
RG = 7.5 25
ns
Eon Turn-on Switching Energy 1.5
Eoff Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 10V ; VBus = 600V
ID = 26A ; RG = 7.5 0.75 mJ
Eon Turn-on Switching Energy 2.1
Eoff Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 10V ; VBus = 600V
ID = 26A ; RG = 7.5 0.85 mJ
Chopper diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
VRRM Maximum Peak Repetitive Reverse Voltage 1200 V
Tj = 25°C 100
IRM Maximum Reverse Leakage Current VR=1200V Tj = 125°C 500 µA
IF DC Forward Current Tc = 80°C 30 A
IF = 30A 2.6 3.1
IF = 60A 3.2
VF Diode Forward Voltage
IF = 30A Tj = 125°C 1.8
V
Tj = 25°C 300
trr Reverse Recovery Time
Tj = 125°C 380
ns
Tj = 25°C 360
Qrr Reverse Recovery Charge
IF = 30A
VR = 800V
di/dt=200A/µs
Tj = 125°C 1700
nC
APTC90DSK12T1G
APTC90DSK12T1G – Rev 1 October, 2012
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Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
CoolMOS 0.50
RthJC Junction to Case Thermal Resistance diode 1.2
°C/W
VISOL RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz 4000 V
TJ Operating junction temperature range -40 150
TSTG Storage Temperature Range -40 125
TC Operating Case Temperature -40 100
°C
Torque Mounting torque To heatsink M4 2 3 N.m
Wt Package Weight 80 g
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic Min Typ Max Unit
R25 Resistance @ 25°C 50 k
∆R25/R25 5 %
B25/85 T
25 = 298.15 K 3952 K
∆B/B TC=100°C 4
%
TT
B
R
RT
11
exp
25
85/25
25
SP1 Package outline (dimensions in mm)
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
T: Thermistor temperature
RT: Thermistor value at T
APTC90DSK12T1G
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Typical CoolMOS performance Curve
0.9
0.7
0.5
0.3
0.1
0.05 Single Pulse
0
0.1
0.2
0.3
0.4
0.5
0.6
0.00001 0.0001 0.001 0.01 0.1 1 10
rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
5V
6V
0
40
80
120
0 5 10 15 20
V
DS
, Drain to Source Voltage (V)
I
D
, Drain Current (A)
Low Voltage Output Characteristics
V
GS
=20, 8V
0
5
10
15
20
25
30
35
25 50 75 100 125 150
T
C
, Case Temperature (°C)
I
D
, DC Drain Current (A)
DC Drain Current vs Case Temperature
900
925
950
975
1000
25 50 75 100 125
T
J
, Junction Temperature (°C)
Breakdown Voltage vs Temperature
BV
DSS
, Drain to Source Breakdown
Voltage
Maximum Safe Operating Area
10 ms
100 µs
0.1
1
10
100
1000
1 10 100 1000
V
DS
, Drain to Source Voltage (V)
I
D
, Drain Current (A)
limited b
y
R
DS
on
Single pulse
T
J
=150°C
T
C
=25°C
Ciss
Crss
Coss
1
10
100
1000
10000
100000
0 25 50 75 100 125 150 175 200
V
DS
, Drain to Source Voltage (V)
C, Capacitance (pF)
Capacitance vs Drain to Source Voltage
0
2
4
6
8
10
0 50 100 150 200 250 300
Gate Charge (nC)
V
GS
, Gate to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
V
DS
=400V
I
D
=26A
T
J
=25°C
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Hard
switching
ZCS
ZVS
0
50
100
150
200
250
10 12.5 15 17.5 20 22.5 25
I
D
, Drain Current (A)
Frequency (kHz)
Operating Frequency vs Drain Current
V
DS
=600V
D=50%
R
G
=7.5Ω
T
J
=125°C
T
C
=75°C
Switching Energy vs Current
Eon
Eoff
0
1
2
3
4
5 10152025303540
I
D
, Drain Current (A)
Eon and Eoff (mJ)
V
DS
=600V
R
G
=7.5Ω
T
J
=125°C
L=100µH
ON resistance vs Temperature
0.5
1.0
1.5
2.0
2.5
3.0
25 50 75 100 125 150
T
J
, Junction Temperature (°C)
R
DS(on)
, Drain to Source ON resistance
(Normalized)
Switching Energy vs Gate Resistance
Eon
Eoff
0
1
2
3
4
5 101520253035
Gate Resistance (Ohms)
Switching Energy (mJ)
V
DS
=600V
I
D
=26A
T
J
=125°C
L=100µH
APTC90DSK12T1G
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Typical Chopper diode performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.00001 0.0001 0.001 0.01 0.1 1 10
Rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
T
J
=25°C
T
J
=125°C
0
20
40
60
80
0.0 1.0 2.0 3.0 4.0
V
F
, Anode to Cathode Voltage (V)
I
F
, Forward Current (A)
Forward Current vs Forward Voltage Trr vs. Current Rate of Charge
15 A
30 A
45 A
0
100
200
300
400
500
0 200 400 600 800 1000 1200
-di
F
/dt (A/µs)
t
rr
, Reverse Recovery Time (ns)
T
J
=125°C
V
R
=800V
QRR vs. Current Rate Charge
15 A
30 A
45 A
0
1
2
3
4
0 200 400 600 800 1000 1200
-di
F
/dt (A/µs)
Q
RR
, Reverse Recovery Charge (µC)
T
J
=125°C
V
R
=800V
IRRM vs. Current Rate of Charge
15 A
30 A
45 A
0
5
10
15
20
25
30
0 200 400 600 800 1000 1200
-di
F
/dt (A/µs)
I
RRM
, Reverse Recovery Current (A)
T
J
=125°C
V
R
=800V
Capacitance vs. Reverse Voltage
0
40
80
120
160
200
1 10 100 1000
V
R
, Reverse Voltage (V)
C, Capacitance (pF)
0
10
20
30
40
50
25 50 75 100 125 150 175
Case Temperature (ºC)
I
F
(AV) (A)
Max. Average Forward Current vs. Case Temp.
Duty Cycle = 0.5
T
J
=175°C
“COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon
Technologies AG”.
APTC90DSK12T1G
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