THRU
10 Am p
Schott ky Barrier
Rectifier
Features
Maximum Ratings
• Operating Temperature: -55°C to +150°C
• Storage Temperature: -55°C to +175°C
Microsemi
Catalog
Number
Device
Marking Maximum
Recurrent
Peak
Reverse
Voltage
Maximum
RMS
Voltage
Maximum
DC
Blocking
Voltage
www. mccsemi.com
• Metal of siliconrectifier, majonty carrier conducton
• Guard ring for transient protection
• Low power loss high efficiency
• High surge capacity, High current capability
30-60 Volts
INCHES MM
A .560 .625 14.22 15.88
B .380 .420 9.65 10.67
C .100 .135 2.54 3.43
D .230 .270 5.84 6.86
E .380 .420 9.65 10.67
F ------ .250 ------ 6.35
G .500 .580 12.70 14.73
H .090 .110 2.29 2.79
I .020 .045 0.51 1.14
J .012 .025 0.30 0.64
K .139 .161 3.53 4.09
L .140 .190 3.56 4.83
M .045 .055 1.14 1.40
N .080 .115 2.03 2.92
PIN 1
PIN 3 PIN 2
CASE
A
B
C
K
J
I
H
G
F
E
D
N
M
L
H
TO-220AB
PIN
132
MBR1035CT MBR1035CT 35V 24.5V 35V
MBR1040CT MBR1040CT 40V 28V 40V
MBR1045CT MBR1045CT 45V 31.5V 45V
MBR1050CT MBR1050CT 50V 35V 50V
MBR1060CT MBR1060CT 60V 42V 60V
MBR1030CT MBR1030CT 30V 21V 30V
MBR1030CT
MBR1060CT
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current IF(AV) 10A TC = 105°C
Maximum Forward
Voltage Drop Per
Element
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
IR
*Pulse test: Pulse width 300 µsec, Duty cycle 2%
TJ = 125°C
Peak Forward Surge
Current IFSM 125A 8.3ms, half sine
15mA
0.1mA TJ = 25°C
VF .70V IFM = 5A
TJ =
25°C
MBR1030CT-45CT
MBR1050CT-60CT
MBR1030CT-45CT
MBR1050CT-60CT
.80V
.57V
.65V
IFM = 5A
TJ =
125°C
Typical Junction
Capacitance
MBR1030CT-45CT
MBR1050CT-60CT 220pF
170pF
CJ Measured at
1.0MHz, VR=4.0V
omponents
21201 Itasca Street Chatsworth
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MCC