MN13812SN - Panasonic - Datasheet.Directory

Volyage Detector IC

Publication date: December 2008 SAG00011AED 1

This product complies with the RoHS Directive (EU 2002/95/EC).

MN13812S

CMOS IC for Voltage Detection

Overview

The MN13812S are elements that monitor the power supply voltage

supplied to microcomputers and other LSI systems and issue reset signals for

initializing the system after the power is ﬁrst applied or for preventing runaway

operation when the supply voltage ﬂuctuates.

This is a inverted CMOS output,choose the ideal element for your

application from 5 detection ranks.

There is other output types, CMOS output (MN1381S) and N-channel open

drain output (MN13811S).

Features

 Three-pin element requiring no adjustment

Highly precise detection voltage

Detection voltage with hysteresis characteristic

∆VD = 50 mV for ranks G

∆VD = 100 mV for ranks J

Low current consumption: IDD = 1 µA (typ.) for VDD = 5 V

Low ﬂuctuation in detection voltage with tempera-ture (1 mV/°C (typ.))

Applications

Battery checkers

Power outage detectors

Level discriminators

Memory backup systems

Microcomputer reset circuits

Reset circuits for other electronic circuits

Block Diagram

Voltage

Reference 1

Voltage

Reference 2

Level Converter

Comparator

Output Circuit

VDD

OUT

VSS

−

Note) *1 : Circuits vary slightly depending on the output type (CMOS output, N-channel open drain output, or inverted CMOSoutput)

 Package

Code

TO-92-A1

Pin name

1: Out Reset signal output pin

2: VDD Power supply pin

3: VSS Ground pin

13812

1 2 3

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Maintenance/Discontinued includes following four Product lifecycle stage.

planed maintenance type

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MN13812S

2 SAG00011AED

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 Detection Ranks (on Voltage)

Rank

Detection Voltage for Drop in Power Supply Voltage

VDL Unit Detection Voltage Hysteresis Width ∆VD Unit

Min Max Min max

G 2.4 2.6 V 50 300 mV

J 2.6 2.9

 Absolute Maximum Ratings VSS = 0 V, Ta = 25°C

Parameter Symbol Rating Unit

Power supply voltage VDD 7.0 V

Output voltage VO– 0.3 to VDD + 0.3 V

Operating ambient temperature Topr –20 to +70 °C

Storage temperature Tstg –55 to +125 °C

 Recommended Operating Conditions VSS = 0 V, Ta = 25°C

Parameter Symbol Conditions Min Typ Max Unit

Power supply voltage VDD See Figures 1 and 4 1.5 6.0 V

 Application Circuit Example

VDD

OUT

VDD

OUT

MN13812S MN13812S

Sample Circuit 2Sample Circuit 1

Note) Connect resistors, capacitors, and the like only to the output pin on the MN13812S element.

Note that connect-ing them to the power source pins changes VDH, VDL, and ∆VD. Select the values of R and C to match the application.

 Electrical Characteristics

DC Characteristics VSS = 0 V, Ta = –20°C to +70°C

Parameter Symbol Conditions Min Typ Max Unit

Power supply current IDD VDD = 5 V *, Load resistor 10 kΩ1 5 µA

Detection voltage for drop in power supply voltage

VDL Ta = 25°C

See Figures 1 and 4

For particulars, see the detection

voltage rank table.

Detection voltage hysteresis width ∆VD mV

High level output voitage VOH VDD = 1.8 V, IOH = – 0.5 mA 0.8 VDD VDD V

Low level output voitage VOL VDD = 6.0 V, IOH = 0.3 mA VSS 0.4 V

Note) *: This includes the output pin's leakage current.

AC Characteristics VSS = 0 V, Ta = 25°C

Parameter Symbol Conditions Allowable Value (typ) Unit

Rank

Reset release time tOH See Figures 2 and 3 G100.0 µs

Reset time tOL See Figures 2 and 3 G3.0 µs

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planed maintenance type

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MN13812S

SAG00011AED 3

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 Reference Data

VDD

VDH

VDL

1.5 V

0 V

VOUT

MN13812S

tOH tOH

tOL

Inverted CMOS output

Figure 1. Description of Operation

Note) 1. Output cannot be speciﬁed for power supply voltages under 1.5 V because operation is not guaranteed for that range.

2. VDL : Detection voltage for drop in power supply voltage

VDH : Detection voltage for rise in power supply voltage

tOL :

Time lag between the time that the power supply voltage reaches the detection voltage (VDL or VDH) and the time that theoutput pin (OUT) goes to Low level.

tOH :

Time lag between the time that the power supply voltage reaches the detection voltage (VDL or VDH) and the time that theoutput pin (OUT) goes to High level.

VDD

1.6 V

0 V

6.0 V

1.6 V

1.5 V

1.0 V

0 V

tOH

6.0 V

MN13812S

Inverted CMOS output

Figure 2. Description chart of Measuring the Output Characteristics

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planed maintenance type

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MN13812S

4 SAG00011AED

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 Reference Data (Continued)

VDD

VOUT

MN13812S

100 pF

Figure 3. Circuit for Measuring the Output Characteristics

MN13812S

VOUT

0 1.5 V VDD

VDL VDH

∆VD

Inverted CMOS output

Operation

indeterminate

Figure 4. Description chart for Measuring the I/O Characteristics

Note) 1. Output cannot be speciﬁed for power supply voltages under 1.5 V because operation is not guaranteed for that range.

2. VDL : Detection voltage for drop in power supply voltage

VDH : Detection voltage for rise in power supply voltage

Maintenance/

Discontinued

Maintenance/Discontinued includes following four Product lifecycle stage.

planed maintenance type

maintenance type

planed discontinued typed

discontinued type

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MN13812S

SAG00011AED 5

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 Reference Characteristics

The following characteristics curves represent results from a speciﬁc sample therefore they do not guarantee thecharacteristics for the ﬁnal product.

1.4

1.2

1.0

0.8

0.6

0.4

0.2

00 1.0 2.0 3.0 4.0 5.0 6.0 7.0

IDD (µA)

VDD (V)

2.0

1.5

1.0

0.5

−40 −20 0 20 40 60 80

Temperature Characteristic Ta (°C)

VSS OUT

VDD

VSS OUT

VDD

5 V

Figure 5-a IDD  VDD Characteristic Figure 5-b Measurement Circuit

Figure 6-a IDD  Temperature Characteristic Figure 6-b Measurement Circuit

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MN13812S

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 Reference Characteristics (Continued)

The following characteristics curves represent results from a speciﬁc sample therefore they do not guarantee thecharacteristics for the ﬁnal product.

VSS OUT

VDD

VSS OUT

VDD

4.8

4.6

4.4

4.2

4.0

3.8

3.6

3.4

−40 −20 0 20 40 60 80

VDL,VDH (V)

∆VD (V)

0.3

0.25

0.2

0.15

0.1

0.05

–40 −20 0 20 40 60 80

VDH

VDL

Temperature Characteristic Ta (°C)

Figure7-a VDL  VDH Temperature Characteristic

Figure 7-b Measurement Circuit

Figure 8-b Measurement Circuit

Figure 8-a ∆VD Temperature Characteristic

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MN13812S

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 Reference Characteristics (Continued)

The following characteristics curves represent results from a speciﬁc sample therefore they do not guarantee thecharacteristics for the ﬁnal product.

000.5 1.0 1.5 2.0 2.5 3.0

IOL (mA)

VOL (V)

00 1 2345

VOH (V)

| IOH | (mA)

−30°C

80°C

−30°C

Room temperature

VSS OUT

VDD

1.8 V

VSS OUT

VDD

5 V

Figure 9-a IOL  VDL Characteristic Figure 9-b Measurement Circuit

Figure 10-b Measurement Circuit

Figure 10-a IOH  VOH Characteristic

Room temperature

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MN13812S

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 Reference Characteristics (Continued)

The following characteristics curves represent results from a speciﬁc sample therefore they do not guarantee thecharacteristics for the ﬁnal product.

VSS OUT

VDD

1.8 V

VSS OUT

VDD

5 V

2.5

2.0

1.5

1.0

0.5

−40 −20 0 20 40 60 80

IOL (mA)

−40 −20 0 20 40 60 80

7.0

6.5

6.0

5.5

5.0

4.5

| IOH | (mA)

Figure 11-a IOL  Temperature Characteristic Figure 11-b Measurement Circuit

Figure 12-b Measurement Circuit

Figure 12-a IOH  Temperature Characteristic

Temperature Characteristic Ta (°C)

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MN13812S

SAG00011AED 9

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TO-92-A1

5.0 ±0.2

5.1 ±0.2

13.5 ±0.5

0.7 ±0.2

0.45

0.7 ±0.1

4.0 ±0.2

0.45

2.54 ±0.15

(1.27)(1.27)

2.3 ±0.2

123

+0.15

−0.1

+0.15

−0.1

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planed maintenance type

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