BC846BDW1T1, BC847BDW1T1, BC847CDW1T1, BC848BDW1T1, BC848CDW1T1 http://onsemi.com Dual General Purpose Transistors (3) NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is designed for low power surface mount applications. * Device Marking: BC846BDW1T1 = 1B BC847BDW1T1 = 1F BC847CDW1T1 = 1G BC848BDW1T1 = 1K BC848CDW1T1 = 1L (2) Q2 Q1 (4) (5) 1 Rating Symbol BC846 BC847 BC848 Unit VCEO 65 45 30 V Collector - Base Voltage VCBO 80 50 30 V Emitter - Base Voltage VEBO 6.0 6.0 5.0 V IC 100 100 100 mAdc Collector Current -- Continuous (6) 6 5 MAXIMUM RATINGS Collector - Emitter Voltage (1) 2 4 3 SOT-363/SC-88 CASE 419B STYLE 1 DEVICE MARKING THERMAL CHARACTERISTICS Characteristic Total Device Dissipation Per Device FR- 5 Board (1) TA = 25C Derate Above 25C Symbol Max Unit PD 380 250 mW 3.0 mW/C Thermal Resistance, Junction to Ambient RqJA 328 C/W Junction and Storage Temperature Range TJ, Tstg - 55 to +150 C ORDERING INFORMATION Device 1. FR-5 = 1.0 x 0.75 x 0.062 in Semiconductor Components Industries, LLC, 2000 March, 2000 - Rev. 0 See Table 1 Package Shipping BC846BDW1T1 SOT-363 3000 Units/Reel BC847BDW1T1 SOT-363 3000 Units/Reel BC847CDW1T1 SOT-363 3000 Units/Reel BC848BDW1T1 SOT-363 3000 Units/Reel BC848CDW1T1 SOT-363 3000 Units/Reel Publication Order Number: BC846BDW1T1/D BC846BDW1T1, BC847BDW1T1, BC847CDW1T1, BC848BDW1T1, BC848CDW1T1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Min Typ Max 65 45 30 -- -- -- -- -- -- 80 50 30 -- -- -- -- -- -- 80 50 30 -- -- -- -- -- -- 6.0 6.0 5.0 -- -- -- -- -- -- -- -- -- -- 15 5.0 BC846B, BC847B, BC848B BC847C, BC848C -- -- 150 270 -- -- BC846B, BC847B, BC848B BC847C, BC848C 200 420 290 520 450 800 Characteristic Unit OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage (IC = 10 mA) Collector - Emitter Breakdown Voltage (IC = 10 A, VEB = 0) Collector - Base Breakdown Voltage (IC = 10 mA) Emitter - Base Breakdown Voltage (IE = 1.0 mA) V(BR)CEO BC846 Series BC847 Series BC848 Series V V(BR)CES BC846 Series BC847 Series BC848 Series V V(BR)CBO BC846 Series BC847 Series BC848 Series V V(BR)EBO BC846 Series BC847 Series BC848 Series Collector Cutoff Current (VCB = 30 V) (VCB = 30 V, TA = 150C) ICBO V nA A ON CHARACTERISTICS DC Current Gain (IC = 10 A, VCE = 5.0 V) (IC = 2.0 mA, VCE = 5.0 V) hFE -- Collector - Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Collector - Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VCE(sat) -- -- -- -- 0.25 0.6 V Base - Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Base - Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VBE(sat) -- -- 0.7 0.9 -- -- V Base - Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V) Base - Emitter Voltage (IC = 10 mA, VCE = 5.0 V) VBE(on) 580 -- 660 -- 700 770 mV fT 100 -- -- MHz Cobo -- -- 4.5 pF -- -- -- -- 10 4.0 SMALL- SIGNAL CHARACTERISTICS Current - Gain -- Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) Noise Figure (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz) NF BC846B, BC847B, BC848B BC847C, BC848C http://onsemi.com 2 dB BC846BDW1T1, BC847BDW1T1, BC847CDW1T1, BC848BDW1T1, BC848CDW1T1 TYPICAL CHARACTERISTICS 1.0 VCE = 10 V TA = 25C 1.5 TA = 25C 0.9 0.8 V, VOLTAGE (VOLTS) hFE , NORMALIZED DC CURRENT GAIN 2.0 1.0 0.8 0.6 0.4 VBE(sat) @ IC/IB = 10 0.7 VBE(on) @ VCE = 10 V 0.6 0.5 0.4 0.3 0.2 0.3 VCE(sat) @ IC/IB = 10 0.1 0.2 0.2 0.5 50 1.0 20 2.0 5.0 10 IC, COLLECTOR CURRENT (mAdc) 100 0 0.1 200 Figure 1. Normalized DC Current Gain 1.0 VB, TEMPERATURE COEFFICIENT (mV/ C) VCE , COLLECTOR-EMITTER VOLTAGE (V) 50 70 100 Figure 2. "Saturation" and "On" Voltages 2.0 TA = 25C 1.6 IC = 200 mA 1.2 IC = IC = 10 mA 20 mA IC = 50 mA IC = 100 mA 0.8 0.4 0 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mAdc) 0.02 10 0.1 1.0 IB, BASE CURRENT (mA) 20 -55C to +125C 1.2 1.6 2.0 2.4 2.8 0.2 Figure 3. Collector Saturation Region 10 1.0 IC, COLLECTOR CURRENT (mA) 100 Figure 4. Base-Emitter Temperature Coefficient http://onsemi.com 3 BC846BDW1T1, BC847BDW1T1, BC847CDW1T1, BC848BDW1T1, BC848CDW1T1 f T, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) TYPICAL CHARACTERISTICS 10 C, CAPACITANCE (pF) 7.0 TA = 25C 5.0 Cib 3.0 Cob 2.0 1.0 0.4 0.6 0.8 1.0 4.0 6.0 8.0 10 2.0 VR, REVERSE VOLTAGE (VOLTS) 40 20 400 300 200 VCE = 10 V TA = 25C 100 80 60 40 30 20 0.5 0.7 Figure 5. Capacitances 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc) 30 50 Figure 6. Current-Gain - Bandwidth Product TA = 25C VCE = 5 V TA = 25C 0.8 V, VOLTAGE (VOLTS) hFE , DC CURRENT GAIN (NORMALIZED) 1.0 2.0 1.0 0.5 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 5.0 V 0.4 0.2 0.2 VCE(sat) @ IC/IB = 10 0 10 100 1.0 IC, COLLECTOR CURRENT (mA) 0.1 0.2 0.2 0.5 2.0 50 100 200 50 100 200 -1.0 TA = 25C 1.6 20 mA 50 mA 100 mA 200 mA 1.2 IC = 10 mA 0.8 0.4 0 10 20 2.0 5.0 IC, COLLECTOR CURRENT (mA) Figure 8. "On" Voltage VB, TEMPERATURE COEFFICIENT (mV/ C) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 7. DC Current Gain 1.0 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) 5.0 10 20 -1.4 -1.8 VB for VBE -55C to 125C -2.2 -2.6 -3.0 0.2 Figure 9. Collector Saturation Region 0.5 10 20 5.0 1.0 2.0 IC, COLLECTOR CURRENT (mA) Figure 10. Base-Emitter Temperature Coefficient http://onsemi.com 4 BC846BDW1T1, BC847BDW1T1, BC847CDW1T1, BC848BDW1T1, BC848CDW1T1 1.0 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 ZJA(t) = r(t) RJA RJA = 328C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) P(pk) t1 0.01 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.001 0 10 1.0 100 1.0 k 10 k 100 k 1.0 M t, TIME (ms) Figure 11. Thermal Response -200 IC, COLLECTOR CURRENT (mA) 1s 3 ms -100 -50 -10 -5.0 -2.0 -1.0 TA = 25C The safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 14 is based upon TJ(pk) = 150C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) 150C. TJ(pk) may be calculated from the data in Figure 13. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown. TJ = 25C BC558 BC557 BC556 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT -5.0 -10 -30 -45 -65 -100 VCE, COLLECTOR-EMITTER VOLTAGE (V) Figure 12. Active Region Safe Operating Area http://onsemi.com 5 BC846BDW1T1, BC847BDW1T1, BC847CDW1T1, BC848BDW1T1, BC848CDW1T1 INFORMATION FOR USING THE SOT-363 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.5 mm (min) 0.4 mm (min) EEE EEE EEE EEE EEE EEE EEE EEE 1.9 mm EEE EEE EEE EEE EEE EEE EEE EEE 0.65 mm 0.65 mm SOT-363 SOT-363 POWER DISSIPATION SOLDERING PRECAUTIONS The power dissipation of the SOT-363 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA. Using the values provided on the data sheet for the SOT-363 package, PD can be calculated as follows: PD = The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. * Always preheat the device. * The delta temperature between the preheat and soldering should be 100C or less.* * When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10C. * The soldering temperature and time shall not exceed 260C for more than 10 seconds. * When shifting from preheating to soldering, the maximum temperature gradient shall be 5C or less. * After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. TJ(max) - TA RJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25C, one can calculate the power dissipation of the device which in this case is 150 milliwatts. PD = 150C - 25C 833C/W = 150 milliwatts The 833C/W for the SOT-363 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 150 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT-363 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. http://onsemi.com 6 BC846BDW1T1, BC847BDW1T1, BC847CDW1T1, BC848BDW1T1, BC848CDW1T1 PACKAGE DIMENSIONS SOT-363/SC-88 CASE 419B-01 ISSUE G A G V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 6 5 4 -B- S 1 2 DIM A B C D G H J K N S V 3 D 6 PL 0.2 (0.008) M B M N J C H K http://onsemi.com 7 INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC --- 0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 0.012 0.016 STYLE 1: PIN 1. 2. 3. 4. 5. 6. MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC --- 0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 0.30 0.40 EMITTER 2 BASE 2 COLLECTOR 1 EMITTER 1 BASE 1 COLLECTOR 2 BC846BDW1T1, BC847BDW1T1, BC847CDW1T1, BC848BDW1T1, BC848CDW1T1 Thermal Clad is a trademark of the Bergquist Company. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. 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