Semiconductor Components Industries, LLC, 2000
March, 2000 – Rev. 0 1Publication Order Number:
BC846BDW1T1/D
BC846BDW1T1,
BC847BDW1T1,
BC847CDW1T1,
BC848BDW1T1,
BC848CDW1T1
Dual General Purpose
Transistors
NPN Duals
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT–363/SC–88 which is
designed for low power surface mount applications.
•Device Marking:
BC846BDW1T1 = 1B
BC847BDW1T1 = 1F
BC847CDW1T1 = 1G
BC848BDW1T1 = 1K
BC848CDW1T1 = 1L
MAXIMUM RATINGS
Rating Symbol BC846 BC847 BC848 Unit
Collector–Emitter Voltage VCEO 65 45 30 V
Collector–Base Voltage VCBO 80 50 30 V
Emitter–Base Voltage VEBO 6.0 6.0 5.0 V
Collector Current —
Continuous IC100 100 100 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation
Per Device
FR–5 Board (1)
TA = 25°C
Derate Above 25°C
PD380
250
3.0
mW
mW/°C
Thermal Resistance,
Junction to Ambient R
q
JA 328 °C/W
Junction and Storage
Temperature Range TJ, Tstg –55 to +150 °C
1. FR–5 = 1.0 x 0.75 x 0.062 in
Device Package Shipping
ORDERING INFORMATION
BC846BDW1T1 SOT–363
http://onsemi.com
SOT–363/SC–88
CASE 419B
STYLE 1
3000 Units/Reel
DEVICE MARKING
BC847BDW1T1 SOT–363 3000 Units/Reel
BC847CDW1T1 SOT–363 3000 Units/Reel
BC848BDW1T1 SOT–363 3000 Units/Reel
See Table
Q1
(1)(2)
(3)
(4) (5) (6)
Q2
123
654
BC848CDW1T1 SOT–363 3000 Units/Reel
BC846BDW1T1, BC847BDW1T1, BC847CDW1T1, BC848BDW1T1, BC848CDW1T1
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 10 mA) BC846 Series
BC847 Series
BC848 Series
V(BR)CEO 65
45
30
—
—
—
—
—
—
V
Collector–Emitter Breakdown Voltage
(IC = 10 µA, VEB = 0) BC846 Series
BC847 Series
BC848 Series
V(BR)CES 80
50
30
—
—
—
—
—
—
V
Collector–Base Breakdown Voltage
(IC = 10
m
A) BC846 Series
BC847 Series
BC848 Series
V(BR)CBO 80
50
30
—
—
—
—
—
—
V
Emitter–Base Breakdown Voltage
(IE = 1.0
m
A) BC846 Series
BC847 Series
BC848 Series
V(BR)EBO 6.0
6.0
5.0
—
—
—
—
—
—
V
Collector Cutof f Current (VCB = 30 V)
(VCB = 30 V, TA = 150°C) ICBO —
——
—15
5.0 nA
µA
ON CHARACTERISTICS
DC Current Gain
(IC = 10 µA, VCE = 5.0 V) BC846B, BC847B, BC848B
BC847C, BC848C
(IC = 2.0 mA, VCE = 5.0 V) BC846B, BC847B, BC848B
BC847C, BC848C
hFE —
—
200
420
150
270
290
520
—
—
450
800
—
Collector–Emitter Saturation V oltage (IC = 10 mA, IB = 0.5 mA)
Collector–Emitter Saturation V oltage (IC = 100 mA, IB = 5.0 mA) VCE(sat) —
——
—0.25
0.6 V
Base–Emitter Saturation V oltage (IC = 10 mA, IB = 0.5 mA)
Base–Emitter Saturation V oltage (IC = 100 mA, IB = 5.0 mA) VBE(sat) —
—0.7
0.9 —
—V
Base–Emitter V oltage (IC = 2.0 mA, VCE = 5.0 V)
Base–Emitter V oltage (IC = 10 mA, VCE = 5.0 V) VBE(on) 580
—660
—700
770 mV
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) fT100 — — MHz
Output Capacitance (VCB = 10 V, f = 1.0 MHz) Cobo — — 4.5 pF
Noise Figure (IC = 0.2 mA,
VCE = 5.0 Vdc, RS = 2.0 kΩ, BC846B, BC847B, BC848B
f = 1.0 kHz, BW = 200 Hz) BC847C, BC848C
NF —
——
—10
4.0
dB
BC846BDW1T1, BC847BDW1T1, BC847CDW1T1, BC848BDW1T1, BC848CDW1T1
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TYPICAL CHARACTERISTICS
Figure 1. Normalized DC Current Gain
IC, COLLECTOR CURRENT (mAdc)
2.0
Figure 2. “Saturation” and “On” Voltages
IC, COLLECTOR CURRENT (mAdc)
0.2 0.5 1.0 10 20 50
0.2 100
Figure 3. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 4. Base–Emitter Temperature Coefficient
IC, COLLECTOR CURRENT (mA)
2.0 5.0 200
0.6
0.7
0.8
0.9
1.0
0.5
0
0.2
0.4
0.1
0.3
1.6
1.2
2.0
2.8
2.4
1.2
1.6
2.0
0.02 1.0 10
020
0.1
0.4
0.8
h
FE
,
NORMAL
I
ZED D
C
C
URRENT GA
I
N
V, VOLTAGE (VOL TS)
V
CE
,
C
OLLE
C
TOR–EM
I
TTER
V
OLTAGE (
V
)
VB, TEMPERATURE COEFFICIENT (mV/ C)°θ
1.5
1.0
0.8
0.6
0.4
0.3
0.2 0.5 1.0 10 20 50
2.0 10070
307.05.03.00.70.30.1
0.2 1.0 10 100
TA = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE(on) @ VCE = 10 V
VCE = 10 V
TA = 25°C
–55°C to +125°CTA = 25°C
IC = 50 mA IC = 100 mA
IC = 200 mA
IC =
20 mA
IC =
10 mA
1.0
BC846BDW1T1, BC847BDW1T1, BC847CDW1T1, BC848BDW1T1, BC848CDW1T1
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4
TYPICAL CHARACTERISTICS
Figure 5. Capacitances
VR, REVERSE VOLTAGE (VOLTS)
10
Figure 6. Current–Gain – Bandwidth Product
IC, COLLECTOR CURRENT (mAdc)
0.4 0.6 1.0 10 20
1.0
Figure 7. DC Current Gain
IC, COLLECTOR CURRENT (mA)
Figure 8. “On” Voltage
IC, COLLECTOR CURRENT (mA)
2.0 6.0 40
80
100
200
300
400
60
20
40
30
0.8
1.0
0.6
0.2
0.4
1.0
2.0
0.1 1.0 10 100
0.2
0.2
0.5
7.0
5.0
3.0
2.0
0.7 1.0 10 202.0 50
307.05.03.00.5
0.2 1.0 10 200
TA = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE @ VCE = 5.0 V
VCE = 10 V
TA = 25°C
Figure 9. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 10. Base–Emitter Temperature Coefficient
IC, COLLECTOR CURRENT (mA)
–1.0
1.2
1.6
2.0
0.02 1.0 10
020
0.1
0.4
0.8
V
CE
,
C
OLLE
C
TOR–EM
I
TTER
V
OLTAGE (
V
OLTS)
VB, TEMPERATURE COEFFICIENT (mV/ C)°θ
0.2 2.0 10 200
1.0
TA = 25°C
200 mA
50 mA
IC =
10 mA
h
FE
,
D
C
C
URRENT GA
I
N (NORMAL
I
ZED)
V, VOLTAGE (VOL TS)
C,
C
A
P
A
CI
TAN
C
E (p
F
)
f , CURRENT–GAIN – BANDWIDTH PRODUCT (MHz)
T
0.8 4.0 8.0
TA = 25°C
Cob
Cib
VCE = 5 V
TA = 25°C
00.5 2.0 5.0 20 50 100
0.05 0.2 0.5 2.0 5.0
100 mA
20 mA
–1.4
–1.8
–2.2
–2.6
–3.0 0.5 5.0 20 50 100
–55°C to 125°C
θVB for VBE
BC846BDW1T1, BC847BDW1T1, BC847CDW1T1, BC848BDW1T1, BC848CDW1T1
http://onsemi.com
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Figure 11. Thermal Response
t, TIME (ms)
1.0
r(t), TRANSIENT THERMAL
1.00
RESIST ANCE (NORMALIZED)
0.1
0.01
0.001 10 100 1.0 k 10 k 100 k
Figure 12. Active Region Safe Operating Area
VCE, COLLECTOR–EMITTER VOLT AGE (V)
–200
–1.0
IC, COLLECTOR CURRENT (mA)
TA = 25°C
D = 0.5
0.2
0.1
0.05
SINGLE PULSE
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
3 ms
TJ = 25°C
ZθJA(t) = r(t) RθJA
RθJA = 328°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) RθJC(t)
t1t2
P(pk)
DUTY CYCLE, D = t1/t2
–100
–50
–10
–5.0
–2.0 –5.0 –10 –30 –45 –65 –100
1 s
BC558
BC557
BC556
The safe operating area curves indicate IC–VCE limits of the
transistor that must be observed for reliable operation. Collector
load lines for specific circuits must fall below the limits indicated
by the applicable curve.
The data of Figure 14 is based upon TJ(pk) = 150°C; TC or TA
is variable depending upon conditions. Pulse curves are valid for
duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be
calculated from the data in Figure 13. At high case or ambient
temperatures, thermal limitations will reduce the power that can
be handled to values less than the limitations imposed by the
secondary breakdown.
1.0 M
0.02
0.01
BC846BDW1T1, BC847BDW1T1, BC847CDW1T1, BC848BDW1T1, BC848CDW1T1
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INFORMATION FOR USING THE SOT–363 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the
total design. The footprint for the semiconductor packages
must be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
SOT–363
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
0.5 mm (min)
0.4 mm (min)
0.65 mm 0.65 mm
1.9 mm
SOT–363 POWER DISSIPATION
The power dissipation of the SOT–363 is a function of
the pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power
dissipation. Power dissipation for a surface mount device is
determined by TJ(max), the maximum rated junction
temperature of the die, RθJA, the thermal resistance from
the device junction to ambient, and the operating
temperature, TA. Using the values provided on the data
sheet for the SOT–363 package, PD can be calculated as
follows:
PD = TJ(max) – TA
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values
into the equation for an ambient temperature TA of 25°C,
one can calculate the power dissipation of the device which
in this case is 150 milliwatts.
PD = 150°C – 25°C
833°C/W = 150 milliwatts
The 833°C/W for the SOT–363 package assumes the use
of the recommended footprint on a glass epoxy printed
circuit board to achieve a power dissipation of
150 milliwatts. There are other alternatives to achieving
higher power dissipation from the SOT–363 package.
Another alternative would be to use a ceramic substrate or
an aluminum core board such as Thermal Clad. Using a
board material such as Thermal Clad, an aluminum core
board, the power dissipation can be doubled using the same
footprint.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
•Always preheat the device.
•The delta temperature between the preheat and
soldering should be 100°C or less.*
•When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference shall be a maximum of 10 °C.
•The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
•When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
•After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
•Mechanical stress or shock should not be applied
during cooling.
* Soldering a device without preheating can cause
excessive thermal shock and stress which can result in
damage to the device.
BC846BDW1T1, BC847BDW1T1, BC847CDW1T1, BC848BDW1T1, BC848CDW1T1
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7
PACKAGE DIMENSIONS
SOT–363/SC–88
CASE 419B–01
ISSUE G
STYLE 1:
PIN 1. EMITTER 2
2. BASE 2
3. COLLECTOR 1
4. EMITTER 1
5. BASE 1
6. COLLECTOR 2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM
AMIN MAX MIN MAX
MILLIMETERS
1.80 2.200.071 0.087
INCHES
B1.15 1.350.045 0.053
C0.80 1.100.031 0.043
D0.10 0.300.004 0.012
G0.65 BSC0.026 BSC
H––– 0.10–––0.004
J0.10 0.250.004 0.010
K0.10 0.300.004 0.012
N0.20 REF0.008 REF
S2.00 2.200.079 0.087
V0.30 0.400.012 0.016
B0.2 (0.008) MM
123
A
GV
S
H
C
N
J
K
654
–B–
D6 PL
BC846BDW1T1, BC847BDW1T1, BC847CDW1T1, BC848BDW1T1, BC848CDW1T1
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without further notice to any products herein. SCILLC makes no warranty , representation or guarantee regarding the suitability of its products for any particular
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including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
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BC846BDW1T1/D
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