Document Number: 91061 www.vishay.com
S11-0507-Rev. C, 21-Mar-11 1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Power MOSFET
IRF830A, SiHF830A
Vishay Siliconix
FEATURES
• Low Gate Charge Qg Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Effective Coss Specified
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptable Power Supply
• High Speed power Switching
TYPICAL SMPS TOPOLOGIES
• Two Transistor Forward
•Half Bridge
• Full Bridge
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 18 mH, Rg = 25 Ω, IAS = 5.0 A (see fig. 12).
c. ISD ≤ 5.0 A, dI/dt ≤ 370 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
PRODUCT SUMMARY
VDS (V) 500
RDS(on) (Ω)V
GS = 10 V 1.4
Qg (Max.) (nC) 24
Qgs (nC) 6.3
Qgd (nC) 11
Configuration Single
N-Channel MOSFET
G
D
S
TO-220AB
GD
S
Available
RoHS*
COMPLIANT
ORDERING INFORMATION
Package TO-220AB
Lead (Pb)-free IRF830APbF
SiHF830A-E3
SnPb IRF830A
SiHF830A
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 500 V
Gate-Source Voltage VGS ± 30
Continuous Drain Current VGS at 10 V TC = 25 °C ID
5.0
ATC = 100 °C 3.2
Pulsed Drain CurrentaIDM 20
Linear Derating Factor 0.59 W/°C
Single Pulse Avalanche EnergybEAS 230 mJ
Repetitive Avalanche CurrentaIAR 5.0 A
Repetitive Avalanche EnergyaEAR 7.4 mJ
Maximum Power Dissipation TC = 25 °C PD74 W
Peak Diode Recovery dV/dtcdV/dt 5.3 V/ns
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C
Soldering Recommendations (Peak Temperature) for 10 s 300d
Mounting Torque 6-32 or M3 screw 10 lbf · in
1.1 N · m
* Pb containing terminations are not RoHS compliant, exemptions may apply
www.vishay.com Document Number: 91061
2S11-0507-Rev. C, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF830A, SiHF830A
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS.
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient RthJA -62
°C/WCase-to-Sink, Flat, Greased Surface RthCS 0.50 -
Maximum Junction-to-Case (Drain) RthJC -1.7
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 500 - - V
VDS Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.60 - V/°C
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.5 V
Gate-Source Leakage IGSS V
GS = ± 30 V - - ± 100 nA
Zero Gate Voltage Drain Current IDSS
VDS = 500 V, VGS = 0 V - - 25 μA
VDS = 400 V, VGS = 0 V, TJ = 125 °C - - 250
Drain-Source On-State Resistance RDS(on) V
GS = 10 V ID = 3.0 Ab--
1.4 Ω
Forward Transconductance gfs VDS = 50 V, ID = 3.0 Ab2.8 - - S
Dynamic
Input Capacitance Ciss VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
-620-
pF
Output Capacitance Coss -93-
Reverse Transfer Capacitance Crss -4.3-
Output Capacitance Coss V
GS = 0 V; VDS = 1.0 V, f = 1.0 MHz 886
Output Capacitance Coss V
GS = 0 V; VDS = 400 V, f = 1.0 MHz 27
Effective Output Capacitance Coss eff. VGS = 0 V; VDS = 0 V to 400 Vc39
Total Gate Charge Qg
VGS = 10 V ID = 5.0 A, VDS = 400 V,
see fig. 6 and 13b
--24
nC Gate-Source Charge Qgs --6.3
Gate-Drain Charge Qgd --11
Turn-On Delay Time td(on)
VDD = 250 V, ID = 5.0 A,
Rg = 14 Ω, RD = 49 Ω, see fig. 10b
-10-
ns
Rise Time tr -21-
Turn-Off Delay Time td(off) -21-
Fall Time tf -15-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current IS
MOSFET symbol
showing the
integral reverse
p - n junction diode
--5.0
A
Pulsed Diode Forward CurrentaISM --20
Body Diode Voltage VSD TJ = 25 °C, IS = 5.0 A, VGS = 0 Vb--
1.5 V
Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 5.0 A, dI/dt = 100 A/μsb-430 650 ns
Body Diode Reverse Recovery Charge Qrr -1.62 2.4 μC
Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
S
D
G
Document Number: 91061 www.vishay.com
S11-0507-Rev. C, 21-Mar-11 3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF830A, SiHF830A
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
www.vishay.com Document Number: 91061
4S11-0507-Rev. C, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF830A, SiHF830A
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
Document Number: 91061 www.vishay.com
S11-0507-Rev. C, 21-Mar-11 5
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF830A, SiHF830A
Vishay Siliconix
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
R
D
V
GS
R
G
D.U.T.
10 V
+
-
V
DS
V
DD
VDS
90 %
10 %
VGS
td(on) trtd(off) tf
10
1
0.1
10-2
10-5 10-4 10-3 10-2 0.1 1
PDM
t1
t2
t1, Rectangular Pulse Duration (s)
Thermal Response (ZthJC)
Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
Single Pulse
(Thermal Response)
D = 0.50
0.20
0.05
0.02
0.01
91061_11
0.10
www.vishay.com Document Number: 91061
6S11-0507-Rev. C, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF830A, SiHF830A
Vishay Siliconix
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Fig. 12d - Basic Gate Charge Waveform
Fig. 13a - Typical Drain-to-Source Voltage vs.
Avalanche Current
Fig. 13b - Gate Charge Test Circuit
A
RG
IAS
0.01 Ω
tp
D.U.T.
L
VDS
+
-VDD
Driver
15 V
20 V
I
AS
V
DS
t
p
QGS QGD
QG
V
G
Charge
10 V
785
770
775
780
0.0 5.04.03.02.01.0
I
AV
, Avalanche Current (A)
V
DSav
, Avalanche Voltage (V)
790
91061_12d
D.U.T.
3 mA
VGS
VDS
IGID
0.3 µF
0.2 µF
50 kΩ
12 V
Current regulator
Current sampling resistors
Same type as D.U.T.
+
-
Document Number: 91061 www.vishay.com
S11-0507-Rev. C, 21-Mar-11 7
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF830A, SiHF830A
Vishay Siliconix
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91061.
P.W. Period
dI/dt
Diode recovery
dV/dt
Ripple ≤ 5 %
Body diode forward drop
Re-applied
voltage
Reverse
recovery
current
Body diode forward
current
VGS = 10 Va
ISD
Driver gate drive
D.U.T. lSD waveform
D.U.T. VDS waveform
Inductor current
D = P.W.
Period
+
-
+
+
+
-
-
-
Peak Diode Recovery dV/dt Test Circuit
VDD
• dV/dt controlled by Rg
• Driver same type as D.U.T.
• ISD controlled by duty factor “D”
• D.U.T. - device under test
D.U.T. Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
Rg
Note
a. VGS = 5 V for logic level devices
VDD
Package Information
www.vishay.com Vishay Siliconix
Revison: 08-Oct-12 1Document Number: 71195
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TO-220AB
Notes
* M = 1.32 mm to 1.62 mm (dimension including protrusion)
Heatsink hole for HVM
• Xi’an and Mingxin actual photo
M*
3
2
1
L
L(1)
D
H(1)
Q
Ø P
A
F
J(1)
b(1)
e(1)
e
E
b
C
MILLIMETERS INCHES
DIM. MIN. MAX. MIN. MAX.
A 4.25 4.65 0.167 0.183
b 0.69 1.01 0.027 0.040
b(1) 1.20 1.73 0.047 0.068
c 0.36 0.61 0.014 0.024
D 14.85 15.49 0.585 0.610
E 10.04 10.51 0.395 0.414
e 2.41 2.67 0.095 0.105
e(1) 4.88 5.28 0.192 0.208
F 1.14 1.40 0.045 0.055
H(1) 6.09 6.48 0.240 0.255
J(1) 2.41 2.92 0.095 0.115
L 13.35 14.02 0.526 0.552
L(1) 3.32 3.82 0.131 0.150
Ø P 3.54 3.94 0.139 0.155
Q 2.60 3.00 0.102 0.118
ECN: X12-0208-Rev. N, 08-Oct-12
DWG: 5471
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Revision: 12-Mar-12 1Document Number: 91000
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