1N6289AG - ON Semiconductor L.L.C.

October, 2009 − Rev. 12

1Publication Order Number:

1N6267A/D

1N6267A Series

1500 Watt Mosorbt Zener

Transient Voltage

Suppressors

Unidirectional

Mosorb devices are designed to protect voltage sensitive

components from high voltage, high−energy transients. They have

excellent clamping capability, high surge capability, low zener

impedance and fast response time. These devices are

ON Semiconductor’s exclusive, cost-effective, highly reliable

Surmetict axial leaded package and are ideally-suited for use in

communication systems, numerical controls, process controls,

medical equipment, business machines, power supplies and many

other industrial/consumer applications, to protect CMOS, MOS and

Bipolar integrated circuits.

Features

•Working Peak Reverse Voltage Range − 5.8 V to 214 V

•Peak Power − 1500 Watts @ 1 ms

•ESD Rating of Class 3 (>16 kV) per Human Body Model

•Maximum Clamp Voltage @ Peak Pulse Current

•Low Leakage < 5 mA Above 10 V

•UL 497B for Isolated Loop Circuit Protection

•Response Time is Typically < 1 ns

•Pb−Free Packages are Available*

Mechanical Characteristics

CASE: Void-free, transfer-molded, thermosetting plastic

FINISH: All external surfaces are corrosion resistant and leads are

readily solderable

MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:

260°C, 1/16 in from the case for 10 seconds

POLARITY: Cathode indicated by polarity band

MOUNTING POSITION: Any

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D. Preferred devices are recommended choices for future use

and best overall value.

Cathode Anode

Device Package Shipping†

ORDERING INFORMATION

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†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

1N6xxxARL4G Axial Lead

(Pb−Free)

1500/Tape & Reel

1N6xxxAG 500 Units/BoxAxial Lead

(Pb−Free)

1.5KExxxARL4G 1500/Tape & ReelAxial Lead

(Pb−Free)

1.5KExxxAG 500 Units/BoxAxial Lead

(Pb−Free)

AXIAL LEAD

CASE 41A

PLASTIC

MARKING DIAGRAMS

A = Assembly Location

1.5KExxxA = ON Device Code

1N6xxx = JEDEC Device Code

YY = Year

WW = Work Week

G= Pb−Free Package

1N6

xxx

YYWWG

1.5KE

xxxA

YYWWG

(Note: Microdot may be in either location)

Uni−Directional TVS

IPP

VRWM

VCVBR

1N6267A Series

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MAXIMUM RATINGS

Rating Symbol Value Unit

Peak Power Dissipation (Note 1) @ TL ≤ 25°C PPK 1500 W

Steady State Power Dissipation

@ TL ≤ 25°C, Lead Length = 3/8 in

Derated above TL = 50°C

PD5.0

mW/°C

Thermal Resistance, Junction−to−Lead RqJL 20 °C/W

Forward Surge Current (Note 2) @ TA = 25°C IFSM 200 A

Operating and Storage Temperature Range TJ, Tstg −65 to +150 °C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

1. Nonrepetitive current pulse per Figure 5 and derated above TA = 25°C per Figure 2.

2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless

otherwise noted, VF = 3.5 V Max., IF (Note 3) = 100 A)

Symbol Parameter

IPP Maximum Reverse Peak Pulse Current

VCClamping Voltage @ IPP

VRWM Working Peak Reverse Voltage

IRMaximum Reverse Leakage Current @ VRWM

VBR Breakdown Voltage @ IT

ITTest Current

QVBR Maximum Temperature Coefficient of VBR

IFForward Current

VFForward Voltage @ IF

1N6267A Series

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 3.5 V Max. @ IF (Note 3) = 100 A)

Device†

JEDEC

Device†

(Note 4)

VRWM

(Note 5) IR @ VRWM

Breakdown Voltage VC @ IPP (Note 7)

QVBR

VBR (Note 6) (Volts) @ ITVCIPP

(Volts) (mA) Min Nom Max (mA) (Volts) (A) (%/°C)

1.5KE6.8AG 1N6267AG 5.8 1000 6.45 6.8 7.14 10 10.5 143 0.057

1.5KE7.5AG −6.4 500 7.13 7.5 7.88 10 11.3 132 0.061

1.5KE8.2AG 1N6269AG 7.02 200 7.79 8.2 8.61 10 12.1 124 0.065

1.5KE9.1AG −7.78 50 8.65 9.1 9.55 1 13.4 112 0.068

1.5KE10AG 1N6271AG 8.55 10 9.5 10 10.5 1 14.5 103 0.073

1.5KE11AG −9.4 5 10.5 11 11.6 1 15.6 96 0.075

1.5KE12AG −10.2 5 11.4 12 12.6 1 16.7 90 0.078

1.5KE13AG 1N6274AG 11.1 5 12.4 13 13.7 1 18.2 82 0.081

1.5KE15AG 1N6275AG 12.8 5 14.3 15 15.8 1 21.2 71 0.084

1.5KE16A, G 1N6276AG 13.6 5 15.2 16 16.8 1 22.5 67 0.086

1.5KE18A, G 1N6277AG 15.3 5 17.1 18 18.9 1 25.2 59.5 0.088

1.5KE20AG 1N6278AG 17.1 5 19 20 21 1 27.7 54 0.09

−1N6279AG 18.8 5 20.9 22 23.1 1 30.6 49 0.092

1.5KE24AG 1N6280AG 20.5 5 22.8 24 25.2 1 33.2 45 0.094

1.5KE27AG 1N6281AG 23.1 5 25.7 27 28.4 1 37.5 40 0.096

1.5KE30AG 1N6282AG 25.6 5 28.5 30 31.5 1 41.4 36 0.097

1.5KE33AG 1N6283AG 28.2 5 31.4 33 34.7 1 45.7 33 0.098

1.5KE36AG 1N6284AG 30.8 5 34.2 36 37.8 1 49.9 30 0.099

1.5KE39AG 1N6285AG 33.3 5 37.1 39 41 1 53.9 28 0.1

1.5KE43AG 1N6286AG 36.8 5 40.9 43 45.2 1 59.3 25.3 0.101

1.5KE47AG 1N6287AG 40.2 5 44.7 47 49.4 1 64.8 23.2 0.101

1.5KE51AG 1N6288A, G 43.6 5 48.5 51 53.6 1 70.1 21.4 0.102

1.5KE56AG 1N6289AG 47.8 5 53.2 56 58.8 1 77 19.5 0.103

1.5KE62AG 1N6290AG 53 5 58.9 62 65.1 1 85 17.7 0.104

1.5KE68AG 1N6291AG 58.1 5 64.6 68 71.4 1 92 16.3 0.104

1.5KE75AG 1N6292AG 64.1 5 71.3 75 78.8 1 103 14.6 0.105

1.5KE82A, G −70.1 5 77.9 82 86.1 1 113 13.3 0.105

1.5KE91AG 1N6294AG 77.8 5 86.5 91 95.5 1 125 12 0.106

−1N6295AG 85.5 5 95 100 105 1 137 11 0.106

Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value.

3. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.

4. Indicates JEDEC registered data

5. A transient suppressor is normally selected according to the maximum working peak reverse voltage (VRWM), which should be equal to or

greater than the dc or continuous peak operating voltage level.

6. VBR measured at pulse test current IT at an ambient temperature of 25°C

7. Surge current waveform per Figure 5 and derate per Figures 1 and 2.

†The “G” suffix indicates Pb−Free package or Pb−Free packages are available.

1N6267A Series

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Figure 1. Pulse Rating Curve

100

0 25 50 75 100 125 150 175 200

PEAK PULSE DERATING IN % OF

PEAK POWER OR CURRENT @ TA= 25 C°

TA, AMBIENT TEMPERATURE (°C)

Figure 2. Pulse Derating Curve

25 50 75 100 125 150 175 200

PD, STEADY STATE POWER DISSIPATION (WATTS)

TL, LEAD TEMPERATURE (°C)

3/8″

100

001 2 3 4

t, TIME (ms)

, VALUE (%)

PEAK VALUE - IPP

HALF VALUE - IPP

PULSE WIDTH (tP) IS DEFINED AS

THAT POINT WHERE THE PEAK

CURRENT DECAYS TO 50% OF IPP

tr ≤ 10ms

1ms 10ms 100ms1 ms 10 ms

100

, PULSE WIDTH

PPK, PEAK POWER (kW)

NONREPETITIVE

PULSE WAVEFORM

SHOWN IN FIGURE 5

0.1ms

IPP

Figure 3. Capacitance versus Breakdown Voltage

VBR, BREAKDOWN VOLTAGE (VOLTS)

1 10 100 1000

10,000

1000

100

C, CAPACITANCE (pF)

MEASURED @ VRWM

MEASURED @

ZERO BIAS

Figure 4. Steady State Power Derating Figure 5. Pulse Waveform

VBR, BREAKDOWN VOLTAGE (VOLTS)

1 10 100 1000

10,000

1000

100

CAPACITANCE

(

MEASURED @

ZERO BIAS

MEASURED @ VRWM

1N6267A Series

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Figure 6. Dynamic Impedance

1000

500

200

100

0.3 0.5 0.7 1 2 3 5 7 10 20 30

DVBR, INSTANTANEOUS INCREASE IN VBR ABOVE VBR(NOM) (VOLTS)

VBR(NOM)=6.8 to 13V

20V

24V 43V

75V

180V

120V

Figure 7. Typical Derating Factor for Duty Cycle

DERATING FACTOR

1 ms

10 ms

0.7

0.5

0.3

0.05

0.1

0.2

0.01

0.02

0.03

0.07

100 ms

0.1 0.2 0.5 2 5 10 5012010

D, DUTY CYCLE (%)

PULSE WIDTH

10 ms

TL=25°C

tP=10ms

IT, TEST CURRENT (AMPS)

APPLICATION NOTES

RESPONSE TIME

In most applications, the transient suppressor device is

placed in parallel with the equipment or component to be

protected. In this situation, there is a time delay associated

with the capacitance of the device and an overshoot

condition associated with the inductance of the device and

the inductance of the connection method. The capacitance

effect is of minor importance in the parallel protection

scheme because it only produces a time delay in the

transition from the operating voltage to the clamp voltage as

shown in Figure 8.

The inductive effects in the device are due to actual

turn-on time (time required for the device to go from zero

current to full current) and lead inductance. This inductive

effect produces an overshoot in the voltage across the

equipment or component being protected as shown in

Figure 9. Minimizing this overshoot is very important in the

application, since the main purpose for adding a transient

suppressor is to clamp voltage spikes. These devices have

excellent response time, typically in the picosecond range

and negligible inductance. However, external inductive

effects could produce unacceptable overshoot. Proper

circuit layout, minimum lead lengths and placing the

suppressor device as close as possible to the equipment or

components to be protected will minimize this overshoot.

Some input impedance represented by Zin is essential to

prevent overstress of the protection device. This impedance

should be as high as possible, without restricting the circuit

operation.

DUTY CYCLE DERATING

The data of Figure 1 applies for non-repetitive conditions

and at a lead temperature of 25°C. If the duty cycle increases,

the peak power must be reduced as indicated by the curves

of Figure 7. Average power must be derated as the lead or

ambient temperature rises above 25°C. The average power

derating curve normally given on data sheets may be

normalized and used for this purpose.

At first glance the derating curves of Figure 7 appear to be

in error as the 10 ms pulse has a higher derating factor than

the 10 ms pulse. However, when the derating factor for a

given pulse of Figure 7 is multiplied by the peak power value

of Figure 1 for the same pulse, the results follow the

expected trend.

1N6267A Series

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TYPICAL PROTECTION CIRCUIT

Vin

Vin (TRANSIENT)

Zin

LOAD

OVERSHOOT DUE TO

INDUCTIVE EFFECTS

tD = TIME DELAY DUE TO CAPACITIVE EFFECT

Figure 8. Figure 9.

UL RECOGNITION*

The entire series has Underwriters Laboratory

Recognition for the classification of protectors (QVGQ2)

under the UL standard for safety 497B and File #E210057.

Many competitors only have one or two devices recognized

or have recognition in a non-protective category. Some

competitors have no recognition at all. With the UL497B

recognition, our parts successfully passed several tests

including Strike Voltage Breakdown test, Endurance

Conditioning, Temperature test, Dielectric Voltage-

Withstand test, Discharge test and several more.

Whereas, some competitors have only passed a

flammability test for the package material, we have been

recognized for much more to be included in their Protector

category.

*Applies to 1.5KE6.8A thru 1.5KE250A

1N6267A Series

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PACKAGE DIMENSIONS

MOSORB

CASE 41A−04

ISSUE D

DIM

MIN MAX MIN MAX

MILLIMETERS

0.335 0.374 8.50 9.50

INCHES

B0.189 0.209 4.80 5.30

D0.038 0.042 0.96 1.06

K1.000 --- 25.40 ---

P--- 0.050 --- 1.27

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. LEAD FINISH AND DIAMETER UNCONTROLLED

IN DIMENSION P.

4. 041A-01 THRU 041A-03 OBSOLETE, NEW

STANDARD 041A-04.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5773−3850

1N6267A/D

Mosorb and Surmetic are trademarks of Semiconductor Components Industries, LLC.

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