Semiconductor Components Industries, LLC, 2003
February, 2003 - Rev. 4 1Publication Order Number:
2N5457/D
2N5457, 2N5458
Preferred Device
JFETs − General Purpose
N- Channel - Depletion
N-Channel Junction Field Effect Transistors, depletion mode (Type
A) designed for audio and switching applications.
•N-Channel for Higher Gain
•Drain and Source Interchangeable
•High AC Input Impedance
•High DC Input Resistance
•Low Transfer and Input Capacitance
•Low Cross-Modulation and Intermodulation Distortion
•Unibloc Plastic Encapsulated Package
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain-Source Voltage VDS 25 Vdc
Drain- Gate Voltage VDG 25 Vdc
Reverse Gate- Source Voltage VGSR -25 Vdc
Gate Current IG10 mAdc
Total Device Dissipation@ TA = 25°C
Derate above 25°C
PD310
2.82 mW
mW/°C
Operating Junction Temperature TJ135 °C
Storage Temperature Range Tstg - 65 to +150 °C
Device Package Shipping
ORDERING INFORMATION
2N5457 TO-92
TO-92
CASE 29
STYLE 5
5000 Units/Box
3
2
1
Preferred devices are recommended choices for future use
and best overall value.
2N5458 TO-92 5000 Units/Box
Y = Year
WW = Work Week
MARKING DIAGRAMS
2N
5457
YWW
2N
5458
YWW
http://onsemi.com
1 DRAIN
2 SOURCE
3
GATE
2N5457, 2N5458
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Gate- Source Breakdown Voltage (IG = -10 Adc, VDS = 0) V(BR)GSS -25 - - Vdc
Gate Reverse Current (VGS = -15 Vdc, VDS = 0)
(VGS = -15 Vdc, VDS = 0, TA = 100°C) IGSS -
--
-− 1.0
-200 nAdc
Gate-Source Cutoff Voltage 2N5457
(VDS = 15 Vdc, iD = 10 nAdc) 2N5458 VGS(off) -0.5
-1.0 -
--6.0
-7.0 Vdc
Gate-Source Voltage
(VDS = 15 Vdc, iD = 100 Adc) 2N5457
(VDS = 15 Vdc, iD = 200 Adc) 2N5458
VGS -
- -2.5
-3.5 -
-
Vdc
ON CHARACTERISTICS
Zero-Gate-V oltage Drain Current (Note 1) 2N5457
(VDS = 15 Vdc, VGS = 0) 2N5458 IDSS 1.0
2.0 3.0
6.0 5.0
9.0 mAdc
DYNAMIC CHARACTERISTICS
Forward Transfer Admittance (Note 1) 2N5457
(VDS = 15 Vdc, VGS = 0, f = 1 kHz) 2N5458 |Yfs| 1000
1500 3000
4000 5000
5500 mhos
Output Admittance Common Source (Note 1) (VDS = 15 Vdc, VGS = 0, f = 1 kHz) |Yos| - 10 50 mhos
Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1 kHz) Ciss - 4.5 7.0 pF
Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, f = 1 kHz) Crss - 1.5 3.0 pF
1. Pulse Width ≤ 630 ms, Duty Cycle ≤ 10%.
2N5457, 2N5458
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3
Figure 1. Noise Figure versus Source Resistance
VDS, DRAIN−SOURCE VOLTAGE (VOLTS)
Figure 2. Typical Drain Characteristics
VGS, GATE−SOURCE VOLTAGE (VOLTS)
Figure 3. Common Source Transfer Characteristics
1.0
0.4
0.2
0
−1.2
0.8
0.6
0 5 10 15 20 25
0
0.6
0.4
0.2
0.8
1.2
1.0
−0.8 −0.4 0
1.2
, DRAIN CURRENT (mA)
D
I
, DRAIN CURRENT (mA)
D
I
VDS = 15 V
VGS = 0 V
−0.2 V
−0.4 V
−0.6 V
−0.8 V
−1.0 V
VGS(off) −1.2 V
VGS(off) −1.2 V
RS, SOURCE RESISTANCE (Megohms)
14
12
10
8
6
4
2
0
NF, NOISE FIGURE (dB)
0.001 0.01 0.1 1.0 10
VDS = 15 V
VGS = 0
f = 1 kHz
TYPICAL CHARACTERISTICS
For 2N5457 Only
2N5457, 2N5458
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4
VDS, DRAIN−SOURCE VOLTAGE (VOLTS)
Figure 4. Typical Drain Characteristics
VGS, GATE−SOURCE VOLTAGE (VOLTS)
Figure 5. Common Source Transfer
Characteristics
VDS, DRAIN−SOURCE VOLTAGE (VOLTS)
Figure 6. Typical Drain Characteristics
VGS, GATE−SOURCE VOLTAGE (VOLTS)
Figure 7. Common Source Transfer
Characteristics
0
0
4
3
2
1
0
10
4
2
0
−4
5
510152025
5
4
3
2
1
0
−7
8
6
−6 −5 −4 −3 −2 −1
−5 −3 −2 −1 0
, DRAIN CURRENT (mA)
D
I
VDS = 15 V
VGS(off) −5.8 V
, DRAIN CURRENT (mA)
D
I
, DRAIN CURRENT (mA)
D
I, DRAIN CURRENT (mA)
D
I
VDS = 15 V
10
4
2
0
8
6
0 5 10 15 20 25
VGS(off) −5.8 V
VGS = 0 V
VGS = 0 V
−2 V
−1 V
−3 V
−1 V
−2 V
−3 V
−4 V
−5 V
VGS(off) −3.5 V
VGS(off) −3.5 V
NOTE: Note: Graphical data is presented for dc conditions. Tabular data is given
for pulsed conditions (Pulse Width = 630 ms, Duty Cycle = 10%). Under
dc conditions, self heating in higher IDSS units reduces IDSS.
TYPICAL CHARACTERISTICS
For 2N5457 Only
2N5457, 2N5458
http://onsemi.com
5
PACKAGE DIMENSIONS
CASE 29-11
ISSUE AL
TO-92 (TO-226)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
B
K
G
H
SECTION X-X
C
V
D
N
N
XX
SEATING
PLANE DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.20
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.021 0.407 0.533
G0.045 0.055 1.15 1.39
H0.095 0.105 2.42 2.66
J0.015 0.020 0.39 0.50
K0.500 −−− 12.70 −−−
L0.250 −−− 6.35 −−−
N0.080 0.105 2.04 2.66
P−−− 0.100 −−− 2.54
R0.115 −−− 2.93 −−−
V0.135 −−− 3.43 −−−
1
TYLE 5:
PIN 1. DRAIN
2. SOURCE
3. GATE
2N5457, 2N5458
http://onsemi.com
6
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changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
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2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051
Phone: 81-3-5773-3850
ON Semiconductor Website: http://onsemi.com
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Sales Representative.
2N5457/D
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