BSM 150 GB 120 DN2 IGBT Power Module * Half-bridge * Including fast free-wheeling diodes * Package with insulated metal base plate Type VCE IC BSM 150 GB 120 DN2 1200V 210A Package Ordering Code HALF-BRIDGE 2 C67076-A2108-A70 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE Collector-gate voltage VCGR RGE = 20 k Values 1200 Unit V 1200 Gate-emitter voltage VGE DC collector current IC 20 A TC = 25 C 210 TC = 80 C 150 Pulsed collector current, tp = 1 ms ICpuls TC = 25 C 420 TC = 80 C 300 Ptot Power dissipation per IGBT TC = 25 C W 1250 Chip temperature Tj Storage temperature Tstg Thermal resistance, chip case RthJC 0.1 Diode thermal resistance, chip case RthJCD 0.25 Insulation test voltage, t = 1min. Vis Creepage distance + 150 C -55 ... + 150 K/W 2500 Vac - 20 mm Clearance - 11 DIN humidity category, DIN 40 040 - F IEC climatic category, DIN IEC 68-1 - Semiconductor Group 1 - 55 / 150 / 56 Mar-28-1996 BSM 150 GB 120 DN2 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Gate threshold voltage VGE(th) VGE = VCE, IC = 6 mA V 4.5 5.5 6.5 VGE = 15 V, IC = 150 A, Tj = 25 C - 2.5 3 VGE = 15 V, IC = 150 A, Tj = 125 C - 3.1 3.7 Collector-emitter saturation voltage Zero gate voltage collector current VCE(sat) ICES mA VCE = 1200 V, VGE = 0 V, Tj = 25 C - 2 2.8 VCE = 1200 V, VGE = 0 V, Tj = 125 C - 8 - Gate-emitter leakage current IGES VGE = 20 V, VCE = 0 V nA - - 320 AC Characteristics Transconductance gfs VCE = 20 V, IC = 150 A Input capacitance 62 nF - 11 - - 1.6 - - 0.6 - Crss VCE = 25 V, VGE = 0 V, f = 1 MHz Semiconductor Group - Coss VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance - Ciss VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance S 2 Mar-28-1996 BSM 150 GB 120 DN2 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Switching Characteristics, Inductive Load at Tj = 125 C Turn-on delay time td(on) ns VCC = 600 V, VGE = 15 V, IC = 150 A RGon = 5.6 Rise time - 200 400 - 100 200 - 600 800 - 70 100 tr VCC = 600 V, VGE = 15 V, IC = 150 A RGon = 5.6 Turn-off delay time td(off) VCC = 600 V, VGE = -15 V, IC = 150 A RGoff = 5.6 Fall time tf VCC = 600 V, VGE = -15 V, IC = 150 A RGoff = 5.6 Free-Wheel Diode Diode forward voltage VF V IF = 150 A, VGE = 0 V, Tj = 25 C - 2.3 2.8 IF = 150 A, VGE = 0 V, Tj = 125 C - 1.8 - Reverse recovery time trr s IF = 150 A, VR = -600 V, VGE = 0 V diF/dt = -1500 A/s, Tj = 125 C Reverse recovery charge - 0.4 - Qrr C IF = 150 A, VR = -600 V, VGE = 0 V diF/dt = -1500 A/s Tj = 25 C - 5 - Tj = 125 C - 18 - Semiconductor Group 3 Mar-28-1996 BSM 150 GB 120 DN2 Power dissipation Ptot = (TC) parameter: Tj 150 C Safe operating area IC = (VCE) parameter: D = 0, TC = 25C , Tj 150 C 10 3 1300 W tp = 18.0s A 1100 Ptot IC 1000 900 10 2 100 s 800 700 600 1 ms 500 10 1 400 300 10 ms 200 100 0 0 20 40 60 80 100 120 C 10 0 0 10 160 10 1 10 DC 3 10 2 TC V VCE Collector current IC = (TC) parameter: VGE 15 V , Tj 150 C Transient thermal impedance Zth JC = (tp) parameter: D = tp / T IGBT 10 0 240 A K/W 200 IC ZthJC 180 10 -1 160 140 10 -2 120 D = 0.50 100 0.20 0.10 80 0.05 10 -3 60 0.02 40 0.01 single pulse 20 0 0 20 40 60 80 100 120 C 160 TC Semiconductor Group 10 -4 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 4 Mar-28-1996 BSM 150 GB 120 DN2 Typ. output characteristics Typ. output characteristics IC = f (VCE) IC = f (VCE) parameter: tp = 80 s, Tj = 25 C parameter: tp = 80 s, Tj = 125 C IC 300 300 A A 240 220 200 17V 15V 13V 11V 9V 7V IC 240 220 200 180 180 160 160 140 140 120 120 100 100 80 80 60 60 40 40 20 0 0 20 0 0 1 2 3 V 5 VCE 17V 15V 13V 11V 9V 7V 1 2 3 V 5 VCE Typ. transfer characteristics IC = f (VGE) parameter: tp = 80 s, VCE = 20 V 300 A IC 240 220 200 180 160 140 120 100 80 60 40 20 0 0 2 4 Semiconductor Group 6 8 10 V 14 VGE 5 Mar-28-1996 BSM 150 GB 120 DN2 Typ. capacitances Typ. gate charge VGE = (QGate) parameter: IC puls = 150 A C = f (VCE) parameter: VGE = 0 V, f = 1 MHz 10 2 20 V nF VGE 16 C 600 V 14 800 V 10 1 Ciss 12 10 8 Coss 10 0 6 Crss 4 2 0 0 200 400 600 800 nC 10 -1 0 1100 5 10 15 20 25 30 V 40 VCE QGate Reverse biased safe operating area Short circuit safe operating area ICpuls = f(VCE) , Tj = 150C parameter: VGE = 15 V ICsc = f(VCE) , Tj = 150C parameter: VGE = 15 V, tSC 10 s, L < 25 nH 2.5 12 ICpuls/IC ICsc/IC 8 1.5 6 1.0 4 0.5 2 0.0 0 0 200 400 Semiconductor Group 600 800 1000 1200 V 1600 VCE 6 0 200 400 600 800 1000 1200 V 1600 VCE Mar-28-1996 BSM 150 GB 120 DN2 Typ. switching time Typ. switching time I = f (IC) , inductive load , Tj = 125C t = f (RG) , inductive load , Tj = 125C par.: VCE = 600 V, VGE = 15 V, RG = 5.6 par.: VCE = 600 V, VGE = 15 V, IC = 150 A 10 4 10 4 ns ns t t 10 3 tdoff 10 3 tdoff tdon tr tdon tr 10 2 10 2 tf tf 10 1 0 50 100 150 200 250 300 A IC 10 1 0 400 10 20 30 40 60 RG Typ. switching losses Typ. switching losses E = f (IC) , inductive load , Tj = 125C E = f (RG) , inductive load , Tj = 125C par.: VCE = 600 V, VGE = 15 V, RG = 5.6 par.: VCE = 600V, VGE = 15 V, IC = 150 A 120 120 mWs mWs Eon E E 80 80 60 60 40 Eon 40 Eoff Eoff 20 0 0 20 50 100 Semiconductor Group 150 200 250 300 A IC 400 7 0 0 10 20 30 40 60 RG Mar-28-1996 BSM 150 GB 120 DN2 Forward characteristics of fast recovery Transient thermal impedance Zth JC = (tp) parameter: D = tp / T reverse diode IF = f(VF) parameter: Tj 10 0 300 A IF Diode K/W 240 ZthJC 10 -1 220 200 180 Tj=125C 160 Tj=25C 10 -2 140 D = 0.50 120 0.20 0.10 100 0.05 10 -3 80 0.02 60 20 0 0.0 0.01 single pulse 40 0.5 1.0 1.5 2.0 V 3.0 VF Semiconductor Group 10 -4 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 8 Mar-28-1996 BSM 150 GB 120 DN2 Circuit Diagram Package Outlines Dimensions in mm Weight: 420 g Semiconductor Group 9 Mar-28-1996