BZT55C2V4 - BZT55C75
Taiwan Semiconductor
1 Version: H1809
500mW, 5% Tolerance Zener Diodes
FEATURES
● Wide zener voltage range selection: 2.4V to 75V
● VZ tolerance selection of ± 5%
● Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
APPLICATIONS
● Low voltage stabilizers or voltage references
● Adapters
● Lighting application
● On-board DC/DC converter
MECHANICAL DATA
● Case: Quadro Mini-MELF (LS34)
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Polarity: Indicated by cathode band
● Weight: 29 ± 2.5mg
KEY PARAMETERS
PARAMETER VALUE UNIT
VZ 2.4-75 V
PD 500 mW
VF at IF=10mA 1 V
TJ Max. 175 °C
Package Quadro Mini-
MELF (LS34)
Configuration Single die
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Forward voltage @ IF=10mA VF 1 V
Power dissipation PD 500 mW
Junction temperature range TJ -65 to +175 °C
Storage temperature range TSTG -65 to +175 °C
THERMAL PERFORMANCE
PARAMETER
SYMBOL
TYP
UNIT
Junction-to-ambient thermal resistance RӨJA 500 °C/W
BZT55C2V4 - BZT55C75
Taiwan Semiconductor
2 Version: H1809
ELECTRICAL SPECIFICATIONS
(TA = 25°C unless otherwise noted)
PART NUMBER
ZENER VOLTAGE TEST
CURRENT
REGULAR
IMPEDANCE
TEST
CURRENT
LEAKAGE CURRENT
VZ @ IZT IZT ZZT @ IZT ZZK @ IZK IZK IR @ VR
V mA Ω Ω mA µA V
Nom. Min. Max. Max. Max. Max.
BZT55C2V4 2.4 2.28 2.56 5 85 600 1 50 1
BZT55C2V7 2.7 2.51 2.89 5 85 600 1 10 1
BZT55C3V0 3.0 2.8 3.2 5 85 600 1 4 1
BZT55C3V3 3.3 3.1 3.5 5 85 600 1 2 1
BZT55C3V6 3.6 3.4 3.8 5 85 600 1 2 1
BZT55C3V9 3.9 3.7 4.1 5 85 600 1 2 1
BZT55C4V3 4.3 4.0 4.6 5 75 600 1 1 1
BZT55C4V7 4.7 4.4 5.0 5 60 600 1 0.5 1
BZT55C5V1 5.1 4.8 5.4 5 35 550 1 0.1 1
BZT55C5V6 5.6 5.2 6.0 5 25 450 1 0.1 1
BZT55C6V2 6.2 5.8 6.6 5 10 200 1 0.1 2
BZT55C6V8 6.8 6.4 7.2 5 8 150 1 0.1 3
BZT55C7V5 7.5 7.0 7.9 5 7 50 1 0.1 5
BZT55C8V2 8.2 7.7 8.7 5 7 50 1 0.1 6.2
BZT55C9V1 9.1 8.5 9.6 5 10 50 1 0.1 6.8
BZT55C10 10 9.4 10.6 5 15 70 1 0.1 7.5
BZT55C11 11 10.4 11.6 5 20 70 1 0.1 8.2
BZT55C12 12 11.4 12.7 5 20 90 1 0.1 9.1
BZT55C13 13 12.4 14.1 5 26 110 1 0.1 10
BZT55C15 15 13.8 15.6 5 30 110 1 0.1 11
BZT55C16 16 15.3 17.1 5 40 170 1 0.1 12
BZT55C18 18 16.8 19.1 5 50 170 1 0.1 13
BZT55C20 20 18.8 21.1 5 55 220 1 0.1 15
BZT55C22 22 20.8 23.3 5 55 220 1 0.1 16
BZT55C24 24 22.8 25.6 5 80 220 1 0.1 18
BZT55C27 27 25.1 28.9 5 80 220 1 0.1 20
BZT55C30 30 28 32 5 80 220 1 0.1 22
BZT55C33 33 31 35 5 80 220 1 0.1 24
BZT55C36 36 34 38 5 80 220 1 0.1 27
BZT55C39 39 37 41 2.5 90 500 0.5 0.1 28
BZT55C43 43 40 46 2.5 90 600 0.5 0.1 32
BZT55C47 47 44 50 2.5 110 700 0.5 0.1 35
BZT55C51 51 48 54 2.5 125 700 0.5 0.1 38
BZT55C56 56 52 60 2.5 135 1,000 0.5 0.1 42
BZT55C62 62 58 66 2.5 150 1,000 0.5 0.1 47
BZT55C68 68 64 72 2.5 160 1,000 0.5 0.1 51
BZT55C75 75 70 79 2.5 170 1,000 0.5 0.1 56
BZT55C2V4 - BZT55C75
Taiwan Semiconductor
3 Version: H1809
Notes:
1. The zener voltage (VZ) is tested under pulse condition of 30ms
2. The device numbers listed have a standard tolerance on the nomial zener voltage of ±5%
3. For detailed information on price, availability and delivery of nominal zener voltages between the voltages
shown and tighter voltage tolerances, contact your nearest Taiwan Semiconductor representative
4. The zener impedance is derived from the 60-cycle ac voltage, which results when an ac current
having an rms value equal to 10% of the DC zener current(IZT or IZK) is superimposed to IZT or IZK
ORDERING CODE
(Note) PACKAGE PACKING
BZT55Cxxx L0 Quadro Mini-MELF 10K / 13" Reel
BZT55Cxxx L0G Quadro Mini-MELF 10K / 13" Reel
BZT55Cxxx L1 Quadro Mini-MELF 2.5K / 7" Reel
BZT55Cxxx L1G Quadro Mini-MELF 2.5K / 7" Reel
Note:
"xxx" defines voltage from 2.4V (BZT55C2V4) to 75V (BZT55C75)
“G” means green compound (halogen free)
BZT55C2V4 - BZT55C75
Taiwan Semiconductor
4 Version: H1809
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig. 1 Typical Forward Characteristics
Fig. 2 Admissible Power Dissipation Curve
Fig. 3 Typical Capacitance
1
10
100
1000
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
TA=25oC
0
100
200
300
400
500
600
0 50 100 150 200
1
10
100
1000
1 10 100
Forward Voltage (V)
Power Dissipation (mW)
Ambient Temperature (
o
C)
Forward Current (mA)
Zener Voltage (V)
Capacitance (pF)
1V Bias
Bias at 50% of VZ (Nom)
BZT55C2V4 - BZT55C75
Taiwan Semiconductor
5 Version: H1809
PACKAGE OUTLINE DIMENSION
SUGGEST PAD LAYOUT
Quadro Mini-MELF
DIM. Unit (mm) Unit (inch)
Min Max Min Max
A 3.30 3.70 0.130 0.146
B 1.40 1.60 0.055 0.063
C 0.20 0.45 0.008 0.018
D 1.8 TYP. 0.071 TYP.
DIM. Unit (mm) Unit (inch)
Typ. Typ.
A 1.25 0.049
B 2.00 0.079
C 2.50 0.098
D 5.00 0.197
BZT55C2V4 - BZT55C75
Taiwan Semiconductor
6 Version: H1809
Notice
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assumes no responsibility or liability for any errors or inaccuracies.
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