MITSUBISHI THYRISTOR MODULES TM25DZ/CZ-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE TM25DZ/CZ-M,-H Average on-state current ............ 25A Repetitive peak reverse voltage ........ 400/800V VDRM Repetitive peak off-state voltage ........ 400/800V DOUBLE ARMS Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 no t fo Re rN c o ew m m De e n sig d n * IT (AV) * VRRM * * * * APPLICATION DC motor control, NC equipment, AC motor control, Contactless switches, Electric furnace temperature control, Light dimmers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 93.5 (DZ) 80 2-6.5 K2 G 2 A1K2 26 12.5 K2 G2 CR1 K1 K1 G1 20 K1 G 1 3-M5 (CZ) K2 G 2 Tab # 110, t=0.5 A1 CR1 K1 K2 A2 CR2 K1 G 1 30 9 LABEL 21 20 6.5 17.5 A2 CR2 Feb.1999 MITSUBISHI THYRISTOR MODULES TM25DZ/CZ-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol Voltage class Parameter M H Unit Repetitive peak reverse voltage 400 800 V Non-repetitive peak reverse voltage 480 960 V VR (DC) DC reverse voltage 320 640 V VDRM Repetitive peak off-state voltage 400 800 V VDSM Non-repetitive peak off-state voltage 480 960 V VD (DC) DC off-state voltage 320 640 V no t fo Re rN c o ew m m De e n sig d n VRRM VRSM Symbol Conditions Ratings Unit 39 A Single-phase, half-wave 180 conduction, TC=93C 25 A Surge (non-repetitive) on-state current One half cycle at 60Hz, peak value 500 A I2t I2t for fusing Value for one cycle of surge current 1.0 x 103 A2s di/dt Critical rate of rise of on-state current VD=1/2VDRM, IG=0.5A, Tj=125C 100 A/s PGM Peak gate power dissipation 5.0 W PG (AV) Average gate power dissipation 0.5 W VFGM Peak gate forward voltage 10 V VRGM Peak gate reverse voltage 5.0 V IFGM Peak gate forward current 2.0 A Tj Junction temperature -40~+125 C Tstg Storage temperature -40~+125 C Viso Isolation voltage Parameter IT (RMS) RMS on-state current IT (AV) Average on-state current ITSM Charged part to case Main terminal screw M5 -- Mounting torque Mounting screw M6 -- Weight Typical value 2500 V 1.47~1.96 N*m 15~20 kg*cm 1.96~2.94 N*m 20~30 kg*cm 160 g ELECTRICAL CHARACTERISTICS Limits Symbol Test conditions Parameter Min. Typ. Max. Unit IRRM Repetitive peak reverse current Tj=125C, VRRM applied -- -- 4.0 mA IDRM Repetitive peak off-state current Tj=125C, VDRM applied -- -- 4.0 mA VTM On-state voltage Tj=125C, ITM=75A, instantaneous value -- -- 1.5 V dv/dt Critical rate of rise of off-state voltage Tj=125C, VD=2/3VDRM 500 -- -- V/s VGT Gate trigger voltage Tj=25C, VD=6V, RL=2 -- -- 3.0 V VGD Gate non-trigger voltage Tj=125C, VD=1/2VDRM 0.25 -- -- V IGT Gate trigger current Tj=25C, VD=6V, RL=2 10 -- 50 mA Rth (j-c) Thermal resistance Junction to case (per 1/2 module) -- -- 0.8 C/ W Rth (c-f) Contact thermal resistance Case to fin, conductive grease applied (per 1/2 module) -- -- 0.2 C/ W Insulation resistance Measured with a 500V megohmmeter between main terminal and case 10 -- -- M -- Feb.1999 MITSUBISHI THYRISTOR MODULES TM25DZ/CZ-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTIC 10 3 7 5 3 2 RATED SURGE (NON-REPETITIVE) ON-STATE CURRENT SURGE (NON-REPETITIVE) ON-STATE CURRENT (A) ON-STATE CURRENT (A) no t fo Re rN c o ew m m De e n sig d n 500 Tj=125C 10 2 7 5 3 2 10 1 7 5 3 2 10 0 0.5 1.0 1.5 2.0 400 300 200 100 0 2.5 1 2 3 ON-STATE VOLTAGE (V) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 10 -3 2 3 5 7 10 -2 2 3 5 7 10 -1 2 3 5 7 10 0 TIME (s) MAXIMUM AVERAGE ON-STATE POWER DISSIPATION (SINGLE PHASE HALFWAVE) LIMITING VALUE OF THE AVERAGE ON-STATE CURRENT (SINGLE PHASE HALFWAVE) 130 PER SINGLE ELEMENT 120 90 RESISTIVE, INDUCTIVE LOAD 25 20 CASE TEMPERATURE (C) AVERAGE ON-STATE POWER DISSIPATION (W) 0.9 GATE CURRENT (mA) 360 30 60 =30 15 10 PER SINGLE ELEMENT 5 0 50 70100 MAXIMUM TRANSIENT THERMAL IMPEDANCE (JUNCTION TO CASE) 10 0 2 3 5 7 10 1 1.0 180 35 0 TRANSIENT THERMAL IMPEDANCE (C/W) IFGM=2.0A GATE VOLTAGE (V) VFGM=10V 10 1 PGM=5.0W 7 5 VGT=3.0V PG(AV)= 3 0.50W 2 I GT = 10 0 50mA 7 5 T j= 25C 3 2 VGD=0.25V 10 -1 7 5 4 1 2 3 5 7 10 2 2 3 5 7 10 3 2 3 5 7 10 4 10 40 20 30 CONDUCTION TIME (CYCLES AT 60Hz) GATE CHARACTERISTICS 4 3 2 5 7 10 5 10 15 20 AVERAGE ON-STATE CURRENT (A) 25 120 110 360 RESISTIVE, INDUCTIVE LOAD 100 90 80 =30 0 5 10 60 90 120 180 15 20 25 AVERAGE ON-STATE CURRENT (A) Feb.1999 MITSUBISHI THYRISTOR MODULES TM25DZ/CZ-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE MAXIMUM AVERAGE ON-STATE POWER DISSIPATION (RECTANGULAR WAVE) DC 270 PER SINGLE 180 ELEMENT 120 90 130 PER SINGLE ELEMENT 30 60 20 =30 10 0 RESISTIVE, INDUCTIVE LOAD 0 80 10 5 15 20 25 50 40 =30 60 90 0 130 =180 60 30 20 PER SINGLE MODULE 10 10 20 30 40 50 60 70 20 25 30 35 110 =30 60,90 105 100 95 360 90 RESISTIVE, INDUCTIVE LOAD 0 60 90 50 60 =30 40 30 360 20 10 10 20 RESISTIVE, INDUCTIVE LOAD 30 50 40 DC OUTPUT CURRENT (A) (PER TWO MODULES) 10 20 30 40 50 60 70 80 LIMITING VALUE OF THE DC OUTPUT CURRENT (SINGLE PHASE FULLWAVE RECTIFIED) 130 125 180 120 120 180 RMS ON-STATE CURRENT (A) 80 70 40 115 80 80 CASE TEMPERATURE (C) (PER SINGLE MODULE) ON-STATE POWER DISSIPATION (W) (PER SINGLE MODULE) 15 DC PER SINGLE MODULE 85 MAXIMUM ON-STATE POWER DISSIPATION (SINGLE PHASE FULLWAVE RECTIFIED) 0 10 180 270 120 120 RMS ON-STATE CURRENT (A) 0 5 125 120 90 RESISTIVE, INDUCTIVE LOAD 0 70 60 30 0 80 LIMITING VALUE OF THE RMS ON-STATE CURRENT (SINGLE PHASE FULLWAVE AC) 360 40 90 MAXIMUM AVERAGE ON-STATE POWER DISSIPATION (SINGLE PHASE FULLWAVE AC) 50 35 RESISTIVE, INDUCTIVE LOAD 100 AVERAGE ON-STATE CURRENT (A) 60 30 360 110 AVERAGE ON-STATE CURRENT (A) 70 AVERAGE ON-STATE POWER DISSIPATION (W) 360 CASE TEMPERATURE (C) 40 120 CASE TEMPERATURE (C) AVERAGE ON-STATE POWER DISSIPATION (W) no t fo Re rN c o ew m m De e n sig d n 50 LIMITING VALUE OF THE AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) 360 120 115 RESISTIVE, INDUCTIVE LOAD 110 105 100 95 90 =30 60 90 120 180 85 80 0 10 20 30 40 50 DC OUTPUT CURRENT (A) (PER TWO MODULES) Feb.1999 MITSUBISHI THYRISTOR MODULES TM25DZ/CZ-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE MAXIMUM ON-STATE POWER DISSIPATION (THREE PHASE FULLWAVE RECTIFIED) LIMITING VALUE OF THE DC OUTPUT CURRENT (THREE PHASE FULLWAVE RECTIFIED) 130 no t fo Re rN c o ew m m De e n sig d n ON-STATE POWER DISSIPATION (W) (PER SINGLE MODULE) 80 CASE TEMPERATURE (C) (PER SINGLE MODULE) 90 60 50 60 40 =30 30 20 10 0 125 120 70 0 10 20 30 40 360 RESISTIVE, INDUCTIVE LOAD 50 60 70 DC OUTPUT CURRENT (A) (PER THREE MODULES) 360 120 115 RESISTIVE, INDUCTIVE LOAD 110 105 100 95 90 =30 60 90 120 85 80 80 0 10 20 30 40 50 60 70 80 DC OUTPUT CURRENT (A) (PER THREE MODULES) Feb.1999