Feb.1999
93.5
80
17.5 20 20 3–M5
2–φ6.5
26
12.5
K1 G1
K2 G2
Tab # 110,
t=0.5
30
21
6.5
9
(DZ)
A1K2CR1K1
K1G1
CR2
A2
K2G2
(CZ)
A1CR1K1K2
K1G1
CR2
A2
K2G2
LABEL
MITSUBISHI THYRISTOR MODULES
TM25DZ/CZ-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
APPLICATION
DC motor control, NC equipment, AC motor control, Contactless switches,
Electric furnace temperature control, Light dimmers
TM25DZ/CZ-M,-H
•IT (AV) Average on-state current ............ 25A
•VRRM Repetitive peak reverse voltage
........ 400/800V
•VDRM Repetitive peak off-state voltage
........ 400/800V
•DOUBLE ARMS
•Insulated Type
•UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
not Recommend
for New Design
Feb.1999
ABSOLUTE MAXIMUM RATINGS
Unit
V
V
V
V
V
V
MITSUBISHI THYRISTOR MODULES
TM25DZ/CZ-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
M
400
480
320
400
480
320
H
800
960
640
800
960
640
Symbol
VRRM
VRSM
VR (DC)
VDRM
VDSM
VD (DC)
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
DC off-state voltage
Unit
A
A
A
A2s
A/µs
W
W
V
V
A
°C
°C
V
N·m
kg·cm
N·m
kg·cm
g
Conditions
Single-phase, half-wave 180° conduction, TC=93°C
One half cycle at 60Hz, peak value
Value for one cycle of surge current
VD=1/2VDRM, IG=0.5A, Tj=125°C
Charged part to case
Main terminal screw M5
Mounting screw M6
Typical value
Ratings
39
25
500
1.0 × 103
100
5.0
0.5
10
5.0
2.0
–40~+125
–40~+125
2500
1.47~1.96
15~20
1.96~2.94
20~30
160
Symbol
IT (RMS)
IT (AV)
ITSM
I2t
di/dt
PGM
PG (AV)
VFGM
VRGM
IFGM
Tj
Tstg
Viso
—
—
Parameter
RMS on-state current
Average on-state current
Surge (non-repetitive) on-state current
I2t for fusing
Critical rate of rise of on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Voltage class
ELECTRICAL CHARACTERISTICS
Unit
mA
mA
V
V/µs
V
V
mA
°C/W
°C/W
MΩ
Limits
Symbol
IRRM
IDRM
VTM
dv/dt
VGT
VGD
IGT
Rth (j-c)
Rth (c-f)
—
Parameter
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Critical rate of rise of off-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Thermal resistance
Contact thermal resistance
Insulation resistance
Test conditions
Tj=125°C, VRRM applied
Tj=125°C, VDRM applied
Tj=125°C, ITM=75A, instantaneous value
Tj=125°C, VD=2/3VDRM
Tj=25°C, VD=6V, RL=2Ω
Tj=125°C, VD=1/2VDRM
Tj=25°C, VD=6V, RL=2Ω
Junction to case (per 1/2 module)
Case to fin, conductive grease applied (per 1/2 module)
Measured with a 500V megohmmeter between main terminal
and case
Min.
—
—
—
500
—
0.25
10
—
—
10
Typ.
—
—
—
—
—
—
—
—
—
—
Max.
4.0
4.0
1.5
—
3.0
—
50
0.8
0.2
—
not Recommend
for New Design
Feb.1999
0
10 1
10
0
10
–1
10
–2
10
–3
10
1
10
0
10
4
10
3
10
2
10
1
10
–1
10
3
10
2
10
1
10
0
10
705030207532
0
100
500
200
300
400
101 100
753275327532
3
2
7
5
3
2
7
5
3
2
4
7
5
4
VGT=3.0V
IGT=
50mA
IFGM=2.0A
PGM=5.0W
VFGM=10V
VGD=0.25V
PG(AV)=
0.50W
Tj=
25°C
0.5
7
5
3
2
7
5
3
2
7
5
3
2
1.0 1.5 2.0 2.5
Tj=125°C
753275327532
0.2
0.4
0.6
0.8
1.0
0
7532
0.3
0.5
0.7
0.9
0.1
0025105 15 20
40
5
10
15
20
25
30
35
θ=30°
60°
120°
90°
180°
θ
360°
130
80 02025510
15
90
100
110
120
θ=30° 60° 90° 120° 180°
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
PER SINGLE
ELEMENT
RESISTIVE,
INDUCTIVE
LOAD
PER SINGLE
ELEMENT
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTIC
GATE CHARACTERISTICS MAXIMUM TRANSIENT THERMAL
IMPEDANCE (JUNCTION TO CASE)
MAXIMUM AVERAGE ON-STATE
POWER DISSIPATION
(SINGLE PHASE HALFWAVE)
LIMITING VALUE OF THE AVERAGE
ON-STATE CURRENT
(SINGLE PHASE HALFWAVE)
RATED SURGE (NON-REPETITIVE)
ON-STATE CURRENT
ON-STATE CURRENT (A)
SURGE (NON-REPETITIVE)
ON-STATE CURRENT (A)
ON-STATE VOLTAGE (V) CONDUCTION TIME
(CYCLES AT 60Hz)
GATE VOLTAGE (V)
AVERAGE ON-STATE POWER
DISSIPATION (W)
TRANSIENT THERMAL IMPEDANCE
(°C/W)
CASE TEMPERATURE (°C)
TIME (s)GATE CURRENT (mA)
AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A)
MITSUBISHI THYRISTOR MODULES
TM25DZ/CZ-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
not Recommend
for New Design
Feb.1999
θ
360°
00402010
50
30
10
53515 25
20
30
40
θ=30°
60°
270°
DC
180°
120°
90°
130
50
60
70
80
90
100
110
120
0402010 30 3515525
θ=30° 60° 90° DC270°
θ
360°
180°
120°
00802010
80
30
70
60
50
40
30
20
10
40 50 60 70
θ=180°
60°
90°
30°
θ
360°
θ
120°
80 0802010
130
30
85
40
90
95
100
105
110
115
120
125
50 60 70
θ
360°
θ
θ=30° 60°,90°
120° 180°
00502010
80
30
70
60
50
40
30
20
10
40
θ=30°
60°
120°
90°
180°
θ
360°
θ
130
80 0502010 30 40
85
90
95
100
105
110
115
120
125 θ
360°
θ
θ=30° 60° 90° 180°120°
RESISTIVE,
INDUCTIVE
LOAD
PER SINGLE
ELEMENT
RESISTIVE,
INDUCTIVE
LOAD
PER SINGLE
ELEMENT
RESISTIVE,
INDUCTIVE
LOAD
PER SINGLE
MODULE RESISTIVE,
INDUCTIVE
LOAD
PER SINGLE
MODULE
RESISTIVE,
INDUCTIVE
LOAD
RESISTIVE,
INDUCTIVE
LOAD
MAXIMUM AVERAGE ON-STATE
POWER DISSIPATION
(RECTANGULAR WAVE)
LIMITING VALUE OF THE AVERAGE
ON-STATE CURRENT
(RECTANGULAR WAVE)
AVERAGE ON-STATE POWER
DISSIPATION (W)
AVERAGE ON-STATE CURRENT (A)AVERAGE ON-STATE CURRENT (A)
MAXIMUM AVERAGE ON-STATE
POWER DISSIPATION
(SINGLE PHASE FULLWAVE AC)
LIMITING VALUE OF THE RMS
ON-STATE CURRENT
(SINGLE PHASE FULLWAVE AC)
RMS ON-STATE CURRENT (A) RMS ON-STATE CURRENT (A)
LIMITING VALUE OF THE DC
OUTPUT CURRENT
(SINGLE PHASE FULLWAVE RECTIFIED)
MAXIMUM ON-STATE POWER DISSIPATION
(SINGLE PHASE FULLWAVE RECTIFIED)
ON-STATE POWER DISSIPATION (W)
(PER SINGLE MODULE)
DC OUTPUT CURRENT (A)
(PER TWO MODULES)
DC OUTPUT CURRENT (A)
(PER TWO MODULES)
AVERAGE ON-STATE
POWER DISSIPATION (W)
CASE TEMPERATURE (°C)CASE TEMPERATURE (°C)
CASE TEMPERATURE (°C)
(PER SINGLE MODULE)
MITSUBISHI THYRISTOR MODULES
TM25DZ/CZ-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
not Recommend
for New Design
Feb.1999
00804020
80
60
70
60
50
40
30
20
10
10 7030 50
θ=30°
60°
120°
90°
θ
360°
80 0804020
130
60
85
10 7030 50
90
95
100
105
110
115
120
125
90°θ=30° 60° 120°
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
RESISTIVE,
INDUCTIVE
LOAD
CASE TEMPERATURE (°C)
(PER SINGLE MODULE)
ON-STATE POWER DISSIPATION (W)
(PER SINGLE MODULE)
MAXIMUM ON-STATE POWER DISSIPATION
(THREE PHASE FULLWAVE RECTIFIED)
LIMITING VALUE OF THE DC
OUTPUT CURRENT
(THREE PHASE FULLWAVE RECTIFIED)
DC OUTPUT CURRENT (A)
(PER THREE MODULES)
DC OUTPUT CURRENT (A)
(PER THREE MODULES)
MITSUBISHI THYRISTOR MODULES
TM25DZ/CZ-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
not Recommend
for New Design
