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c 2009 ROHM Co., Ltd. All rights reserved. 2009.12 - Rev.C
Medium Power Transistor (32V,1A)
2SB1132 / 2SA1515S / 2SB1237
Features Dimensions (Unit : mm)
1) Low VCE(sat).
VCE(sat) = 0.2V(Typ.)
(IC / IB = 500mA / 50mA)
2) Compliments 2SD1664 /
2SD1858
Structure
Epitaxial planar type
PNP silicon transistor
3 0.2(15Min.)
4 0.2 2 0.2
0.45
0.5
0.45
5
(1) (2) (3)
0.05
+0.15
+0.15
0.05
2.5 +0.4
0.1
3Min.
(1) Emitter
(2) Collector
(3) Base
ROHM : SPT
EIAJ : SC-72
2SB1132
2SB1237
2SA1515S
(1) Base
(2) Collector
(3) Emitter
ROHM : MPT3
EIAJ : SC-62
(1) Emitter
(2) Collector
(3) Base
ROHM : ATV
1.0
6.8 0.2 2.5 0.2
1.05 0.45 0.1
2.54 2.54
0.5 0.1
0.9
4.4 0.2
14.5 0.5
(1) (2) (3)
0.65Max.
0.3
0.1
+0.2
0.05
+0.1
0.1
+0.2
+0.2
0.1
(3)(2)(1)
4.0
1.0 0.2 0.5 0.1
2.5
3.0 0.2 1.5 0.1
1.5 0.1
0.4 0.1 0.5 0.1 0.4 0.1
0.4
1.5
4.5
1.6 0.1
Abbreviated symbol: BA
Denotes h
FE
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
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c 2009 ROHM Co., Ltd. All rights reserved. 2009.12 - Rev.C
Data Sheet 2SB1132 / 2SA1515S / 2SB1237
Absolute maximum ratings (Ta=25C)
1 Single pulse, Pw=100ms
2 When mounted on a 40 40 0.7 mm ceramic board.
3 Printed circuit board, 1.7 mm thick, collector copper plating 100mm
2
or larger.
+
+
Parameter
V
CBO
V
CEO
V
EBO
P
C
Tj
Tstg
40 V
V
V
A(DC)
W
32
5
1
I
C
A(Pulse)2
0.5
2
0.3
1
1
2
3
2SB1132
2SA1515S
2SB1237
150
55 to +150
Symbol Limits Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
C
C
Electrical characteristics (Ta=25C)
Transition frequency
Output capacitance
DC current
transfer ratio V
CE
=
3V, I
C
=
0.1A
Parameter Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
Cob
Min.
40
32
5
120
0.2
150
20
0.5
0.5
390
0.5
30
VI
C
=
50μA
I
C
=
1mA
I
E
=
50μA
V
CB
=
20V
V
EB
=
4V
I
C
/I
B
=
500mA/
50mA
V
CE
=
5V, I
E
=
50mA, f
=
30MHz
V
CB
=
10V, I
E
=
0A, f
=
1MHz
V
V
μA
μA
120
2SB1132, 2SB1237
2SA1515S 390
V
MHz
pF
Typ. Max. Unit Conditions
Measured using pulse current.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Packaging specifications and hFE
Package
Code
Basic ordering unit (pieces)
Taping
T100 TP
1000 5000
QR
h
FE
QR
2SB1132
2SA1515S
TU2
2500
QR
2SB1237
Type
−−
hFE values are classified as follows :
Item
h
FE
Q
120 to 270
R
180 to 390
3/4
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c 2009 ROHM Co., Ltd. All rights reserved. 2009.12 - Rev.C
Data Sheet 2SB1132 / 2SA1515S / 2SB1237
Electrical characteristics curves
Fig.1 Grounded emitter
propagation characteristi
cs
0
-1
-2
-5
-20
-200
-500
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6
-10
-50
-100
V
CE
=
6V
COLLECTOR CURRENT : IC
(mA)
BASE TO EMITTER VOLTAGE : VBE
(V)
Ta
=
100 C
25 C
55 C
0
0
100
400
500
0.4
0.8
1.2
1.6
200
300
2
.0
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.2 Grounded emitter output
characteristics
I
B
=
0mA
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Ta=25 C
COLLECTOR CURRENT : I
C
(mA)
Fig.3 DC current gain vs.
collector current
(Ι)
1
50
100
1000
2510 20 50 100 200 500
200
500
100
0
DC CURRENT GAIN : h
FE
Ta=25 C
1V
V
CE
= −3V
50
100
1000
200
500
12510 20 50 100 200 500100
0
V
CE
= −
3V
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(mA)
Fig.4 DC current gain vs.
collector current
(ΙΙ)
Ta=100 C
25 C
55 C
1
2
5
10
20
50
100
200
500
1000
200
0
COLLECTOR SATURATION VOLTAGE : V
CE(sat )
(V
)
COLLECTOR CURRENT : I
C (mA)
Fig.5 Collector-emitter saturation
voltage vs. collector current
1
0.5
0.2
0.1
0.05
0.02
0.01
Ta=25 C
I
C
/I
B
=10
12510 20 50 10
0
0.2
0
0.4
0.6
0.8
1.0
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V
)
BASE CURRENT : IB
(
mA
)
Fig.6 Collector-emitter saturation
voltage vs. base current
lC= −500mA
lC= −300mA
Ta
=
25 C
20
50
100
200
12510 20 50 10
0
EMITTER CURRENT : I
E
(mA)
TRANSITION FREQUENCY : f
T
(MHz)
Fig.7 Gain bandwidth product
vs. emitter current
Ta=25 C
V
CE
=
5V
COLLECTOR OUTPUT CAPACITANCE : Cob
(pF
COLLECTOR TO BASE VOLTAGE : V
CB
(
Fig.8 Collector output capacitance
vs.collector-base voltage
0.5 12510 2
10
20
50
Ta=25 C
f=1MHz
I
E
=0A
0
0.01
0.02
0.05
0.2
2
5
0.2 0.5 12510 20 5
0
0.1
0.5
1
COLLECTOR CURRENT : I
C
(A)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(
V
)
Fig.9 Safe operation area
(2SB1132)
Ta=25 C
Single pulse
DC
Pw=100ms
P
w
=
10ms
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c 2009 ROHM Co., Ltd. All rights reserved. 2009.12 - Rev.C
Data Sheet 2SB1132 / 2SA1515S / 2SB1237
TRANSIENT THERMAL RESISTANCE : R
th
( C/W
)
TIME : t
(s)
Fig.10 Transient thermal resistance
(2SB1132)
0.001
0.1
1
10
100
1000
0.01
0.1 110 100 100
0
Ta=25 C
0.01
5
0.1
5
0
COLLECTOR CURRENT : IC (A)
COLLECTOR TO EMITTER VOLTAGE : VCE (
V)
Fig.11 Safe operation area
(2SB1237)
2
0.2
0.5
1
0.1
0.02
0.05
0.2
0.5
1 2 5 10 20
PW =
100
ms
PW =10ms
DC
IC Max.
Ta=25 C
Single pulse
0.1
1 10 100
100
0
0.01
TRANSIENT THERMAL
RESISTANCE : Rth
( C/W)
TIME : t
(s)
Fig.12 Transient thermal resistanc
e
(2SB1237)
200
100
50
20
10
5
2
Ta=25 C
R0039
A
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© 2009 ROHM Co., Ltd. All rights reserved.
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