BC546 / BC547 / BC548 / BC549 / BC550 NPN Epitaxial Silicon Transistor Features * * * * Switching and Amplifier High-Voltage: BC546, VCEO = 65 V Low-Noise: BC549, BC550 Complement to BC556, BC557, BC558, BC559, and BC560 1 TO-92 1. Collector 2. Base 3. Emitter Ordering Information Part Number Marking Package Packing Method BC546ABU BC546A TO-92 3L Bulk BC546ATA BC546A TO-92 3L Ammo BC546BTA BC546B TO-92 3L Ammo BC546BTF BC546B TO-92 3L Tape and Reel BC546CTA BC546C TO-92 3L Ammo BC547ATA BC547A TO-92 3L Ammo BC547B BC547B TO-92 3L Bulk BC547BBU BC547B TO-92 3L Bulk BC547BTA BC547B TO-92 3L Ammo BC547BTF BC547B TO-92 3L Tape and Reel BC547CBU BC547C TO-92 3L Bulk BC547CTA BC547C TO-92 3L Ammo BC547CTFR BC547C TO-92 3L Tape and Reel BC548BU BC548 TO-92 3L Bulk BC548BTA BC548B TO-92 3L Ammo BC548CTA BC548C TO-92 3L Ammo BC549BTA BC549B TO-92 3L Ammo BC549BTF BC549B TO-92 3L Tape and Reel BC549CTA BC549C TO-92 3L Ammo BC550CBU BC550C TO-92 3L Bulk BC550CTA BC550C TO-92 3L Ammo (c) 2002 Fairchild Semiconductor Corporation BC546 / BC547 / BC548 / BC549 / BC550 Rev. 1.1.1 www.fairchildsemi.com 1 BC546 / BC547 / BC548 / BC549 / BC550 -- NPN Epitaxial Silicon Transistor November 2014 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25C unless otherwise noted. Symbol VCBO VCEO Parameter Collector-Base Voltage Collector-Emitter Voltage Value BC546 80 BC547 / BC550 50 BC548 / BC549 30 BC546 65 BC547 / BC550 45 BC548 / BC549 30 BC546 / BC547 6 BC548 / BC549 / BC550 5 Unit V V VEBO Emitter-Base Voltage IC Collector Current (DC) 100 mA PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 C -65 to +150 C TSTG Storage Temperature Range V Electrical Characteristics Values are at TA = 25C unless otherwise noted. Symbol Parameter Conditions Min. Typ. Max. Unit 15 nA ICBO Collector Cut-Off Current VCB = 30 V, IE = 0 hFE DC Current Gain VCE = 5 V, IC = 2 mA VCE(sat) Collector-Emitter Saturation Voltage IC = 10 mA, IB = 0.5 mA 90 250 IC = 100 mA, IB = 5 mA 250 600 VBE(sat) Base-Emitter Saturation Voltage IC = 10 mA, IB = 0.5 mA 700 IC = 100 mA, IB = 5 mA 900 VBE(on) Base-Emitter On Voltage 110 VCE = 5 V, IC = 2 mA 580 800 660 VCE = 5 V, IC = 10 mA VCE = 5 V, IC = 10 mA, f = 100 MHz 300 Cob Output Capacitance VCB = 10 V, IE = 0, f = 1 MHz 3.5 Cib Input Capacitance VEB = 0.5 V, IC = 0, f = 1 MHz 9 NF Noise Figure BC546 / BC547 / BC548 VCE = 5 V, IC = 200 A, f = 1 kHz, RG = 2 k BC549 / BC550 VCE = 5 V, IC = 200 A, RG = 2 k, f = 30 to 15000 MHz BC549 BC550 mV 700 720 Current Gain Bandwidth Product fT mV mV MHz 6.0 pF pF 2.0 10.0 1.2 4.0 1.4 4.0 1.4 3.0 dB hFE Classification Classification A B C hFE 110 ~ 220 200 ~ 450 420 ~ 800 (c) 2002 Fairchild Semiconductor Corporation BC546 / BC547 / BC548 / BC549 / BC550 Rev. 1.1.1 www.fairchildsemi.com 2 BC546 / BC547 / BC548 / BC549 / BC550 -- NPN Epitaxial Silicon Transistor Absolute Maximum Ratings 100 IB = 400A IB = 350A IB = 300A 80 IB = 250A 60 IB = 200A IB = 150A 40 VCE = 5V IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT 100 IB = 100A 20 10 1 IB = 50A 0.1 0.0 0 0 2 4 6 8 10 12 14 16 18 20 0.2 0.4 VCE[V], COLLECTOR-EMITTER VOLTAGE VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE hFE, DC CURRENT GAIN 1000 100 10 1 100 1.2 1000 10000 IC = 10 IB VBE(sat) 1000 100 VCE(sat) 10 1 IC[mA], COLLECTOR CURRENT 10 100 1000 IC[mA], COLLECTOR CURRENT Figure 3. DC Current Gain Figure 4. Base-Emitter Saturation Voltage and Collector-Emitter Saturation Voltage 100 1000 fT, CURRENT GAIN-BANDWIDTH PRODUCT Cob[pF], CAPACITANCE 1.0 Figure 2. Transfer Characteristic VCE = 5V 10 0.8 VBE[V], BASE-EMITTER VOLTAGE Figure 1. Static Characteristic 1 0.6 f=1MHz IE = 0 10 1 0.1 1 10 100 1000 VCB[V], COLLECTOR-BASE VOLTAGE 100 10 1 0.1 1 10 100 IC[mA], COLLECTOR CURRENT Figure 5. Output Capacitance (c) 2002 Fairchild Semiconductor Corporation BC546 / BC547 / BC548 / BC549 / BC550 Rev. 1.1.1 VCE = 5V Figure 6. Current Gain Bandwidth Product www.fairchildsemi.com 3 BC546 / BC547 / BC548 / BC549 / BC550 -- NPN Epitaxial Silicon Transistor Typical Performance Characteristics BC546 / BC547 / BC548 / BC549 / BC550 -- NPN Epitaxial Silicon Transistor Physical Dimensions D Figure 7. 3-Lead, TO-92, JEDEC TO-92 Compliant Straight Lead Configuration, Bulk Type (c) 2002 Fairchild Semiconductor Corporation BC546 / BC547 / BC548 / BC549 / BC550 Rev. 1.1.1 www.fairchildsemi.com 4 BC546 / BC547 / BC548 / BC549 / BC550 -- NPN Epitaxial Silicon Transistor Physical Dimensions (Continued) Figure 8. 3-Lead, TO-92, Molded, 0.2 In Line Spacing Lead Form, Ammo, Tape and Reel Type (c) 2002 Fairchild Semiconductor Corporation BC546 / BC547 / BC548 / BC549 / BC550 Rev. 1.1.1 www.fairchildsemi.com 5 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I72 (c) Fairchild Semiconductor Corporation www.fairchildsemi.com Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Fairchild Semiconductor: BC547CBU BC547BTA BC547BTF BC547BBU BC547CTFR BC547ATA BC547CTA BC547B