PMBT3904MB,315\"\" - NXP SEMICONDUCTORS

1. Product profile

1.1 General description

NPN single switching transistor in a leadless ultra small SOT883B Surface-Mounted

Device (SMD) plastic package.

PNP complement: PMBT3906MB.

1.2 Features and benefits

Single general-purpose switching transistor

AEC-Q101 qualified

Ultra small SMD plastic package

Board-space reduction

Low package height of 0.37 mm

1.3 Applications

General-purpose switching and amplification

Mobile applications

1.4 Quick reference data

2. Pinning information

PMBT3904MB

40 V, 200 mA NPN switching transistor

Rev. 1 — 7 March 2012 Product data sheet

SOT883B

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VCEO collector-emitter voltage open base - - 40 V

ICcollector current - - 200 mA

hFE DC current gain VCE =1V;

IC=10mA 100 180 300

Table 2. Pinning

Pin Description Simplified outline Graphic symbol

1base

2emitter

3 collector

Transparent

top view

sym021

Product data sheet Rev. 1 — 7 March 2012 2 of 13

NXP Semiconductors PMBT3904MB

40 V, 200 mA NPN switching tran si st o r

3. Ordering information

4. Marking

[1] For SOT883B binary marking code description see Figure 1.

4.1 Binary marking code description

Tabl e 3. Ordering i nfo rmation

Type number Package

Name Description Version

PMBT3904MB leadless ultra small plastic package; 3 solder lands;

body 1.0  0.6  0.37 mm SOT883B

Table 4. Marking codes

Type number Marking code[1]

PMBT3904MB 0100 0111

Fig 1. SOT883B binary marking code descri ption

MARKING CODE

(EXAMPLE)

PIN 1 INDICATION READING DIRECTION

READING DIRECTION

READING EXAMPLE:

0111

1011

006aac673

Product data sheet Rev. 1 — 7 March 2012 3 of 13

NXP Semiconductors PMBT3904MB

40 V, 200 mA NPN switching tran si st o r

5. Limiting values

[1] Reflow soldering is the only recommended soldering method.

[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VCBO collector-base voltage open emitter - 60 V

VCEO collector-emitter voltage open base - 40 V

VEBO emitter-base voltage open collector - 6 V

ICcollector current - 200 mA

ICM peak collector current single pulse;

tp1ms -200mA

IBM peak base current single pulse;

tp1ms -100mA

Ptot total power dissipation Tamb 25 C[1][2] -250mW

[1][3] -590mW

Tjjunction temperature - 150 C

Tamb ambient temperature 55 +150 C

Tstg storage temperature 65 +150 C

Product data sheet Rev. 1 — 7 March 2012 4 of 13

NXP Semiconductors PMBT3904MB

40 V, 200 mA NPN switching tran si st o r

6. Thermal characteristics

[1] Reflow soldering is the only recommended soldering method.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-a) thermal resistance from

junction to ambient in free air [1][2] - - 500 K/W

[1][3] - - 212 K/W

FR4 PCB, standard footprint

Fig 2. Transient thermal impedance from junc tio n to ambient as a function of pulse duration; typical values

006aab603

−5

1010

−2

−4

−1

(s)

−3

th(j-a)

(K/W)

duty cycle =

10.75

0.5 0.33

0.2

0.1

0.05 0.02

0.01

Product data sheet Rev. 1 — 7 March 2012 5 of 13

NXP Semiconductors PMBT3904MB

40 V, 200 mA NPN switching tran si st o r

7. Characteristics

[1] Pulse test: tp300 s; 0.02.

Table 7. Characteristics

Tamb =25



C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

ICBO collector-base cut-off

current VCB =30V; I

E=0A - - 50 nA

IEBO emitter-base cut-of f

current VEB =6V; I

C=0A - - 50 nA

hFE DC current gain VCE =1V

IC= 0.1 mA 60 180 -

IC= 1 mA 80 180 -

IC= 10 mA 100 180 300

IC= 50 mA 60 105 -

IC= 100 mA [1] 30 50 -

VCEsat collector-emitter

saturation voltage IC=10mA; I

B= 1 mA - 75 200 mV

IC=50mA; I

B= 5 mA - 120 300 mV

VBEsat base-emitter

saturation voltage IC=10mA; I

B= 1 mA 650 750 850 mV

IC=50mA; I

B= 5 mA - 850 950 mV

tddelay time VCC =3V; I

C=10mA;

IBon =1mA;

IBoff =1mA

--35ns

trrise time - - 35 ns

ton turn-on time - - 70 ns

tsstorage time - - 200 ns

tffall time - - 50 ns

toff turn-off time - - 250 ns

Cccollector capacitance VCB =5V; I

E=i

e=0A;

f=1MHz --4pF

Ceemitter capacitance VEB = 500 mV;

IC=i

c=0A; f=1MHz --8pF

fTtransition frequency VCE =20V; I

C=10mA;

f = 100 MHz 300 - - MHz

NF noise figure VCE =5V; I

C=100A;

RS=1k;

f = 10 Hz to 15.7 kHz

--5dB

Product data sheet Rev. 1 — 7 March 2012 6 of 13

NXP Semiconductors PMBT3904MB

40 V, 200 mA NPN switching tran si st o r

VCE =1V

(1) Tamb = 150 C

(2) Tamb =25C

(3) Tamb =55 C

Tamb =25C

Fig 3. DC current gain as a function of collector

current; typical values Fig 4. Collector current as a function of

collector-emitter voltage; typical values

006aab115

200

400

600

(mA)

−1

110

(1)

(2)

(3)

VCE (V)

0108462

006aab116

0.10

0.05

0.15

0.20

(A)

0.0

IB (mA) = 5.0 4.5

3.5

3.0 2.5

2.0 1.5

1.0

0.5

4.0

Product data sheet Rev. 1 — 7 March 2012 7 of 13

NXP Semiconductors PMBT3904MB

40 V, 200 mA NPN switching tran si st o r

VCE =1V

(1) Tamb =55 C

(2) Tamb =25C

(3) Tamb = 150 C

IC/IB=10

(1) Tamb =55 C

(2) Tamb =25C

(3) Tamb = 150 C

Fig 5. Base-emitter voltage as a function of collector

current; typical values Fig 6. Base-emitter saturation voltage as a function

of collector current; typica l values

IC/IB=10

(1) Tamb = 150 C

(2) Tamb =25C

(3) Tamb =55 C

Fig 7. Collector-emitter saturation voltage as a function of collector current; typical values

006aab117

0.4

0.8

1.2

(V)

(mA)

−1

110

(1)

(2)

(3)

006aab118

IC (mA)

10−1103

102

110

0.5

0.9

1.3

VBEsat

(V)

0.1

(1)

(2)

(3)

006aab119

IC (mA)

10−1103

102

110

10−1

VCEsat

(V)

10−2

(1)

(3)

(2)

Product data sheet Rev. 1 — 7 March 2012 8 of 13

NXP Semiconductors PMBT3904MB

40 V, 200 mA NPN switching tran si st o r

8. Test information

8.1 Quality information

This product has been qualified in accordance with the Automotive Electronics Council

(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is

suitable for use in automotive applications.

9. Package outline

VI= 5 V; t = 600 s; tp=10s; tr=t

f3ns

R1 = 56 ; R2 = 2.5 k; RB=3.9k; RC= 270 

VBB =1.9 V; VCC =3V

Oscilloscope: input impedance Zi=50

Fig 8. Test circuit for switching times

DUT

mlb826

(probe)

450 Ω

(probe)

450 Ω

oscilloscope oscilloscope

Fig 9. Package outline SOT883B

11-11-02Dimensions in mm

0.55

0.47

0.30

0.22

0.40

0.34

0.30

0.22

0.20

0.12

0.65

0.04 max

0.35

0.65

0.55

1.05

0.95

Product data sheet Rev. 1 — 7 March 2012 9 of 13

NXP Semiconductors PMBT3904MB

40 V, 200 mA NPN switching tran si st o r

10. Packing information

[1] For further information and the availability of packing methods, see Section 14.

11. Soldering

Table 8. Packing methods

The indicated -xxx are the last thre e digits of the 12NC ordering code.[1]

Type number Package Description Packing quantity

10000

PMBT3904MB SOT883B 2 mm pitch, 8 mm tape and reel -315

Reflow soldering is the only recommended soldering method.

Fig 10. Reflow soldering footprint SOT883B

1.3

0.3

0.6 0.7

0.4

0.9

0.3

(2x)

0.4

(2x)

0.25

(2x)

R0.05 (8x)

0.7

Footprint information for reflow soldering SOT883B

sot883b_fr

occupied area

solder land

solder resist

solder land plus solder paste

solder paste deposit

Dimensions in mm

Product data sheet Rev. 1 — 7 March 2012 10 of 13

NXP Semiconductors PMBT3904MB

40 V, 200 mA NPN switching tran si st o r

12. Revision history

Table 9. Revision history

Document ID Release da te Data sheet status Change notice Supersedes

PMBT3904MB v.1 20120307 Product data sheet - -

Product data sheet Rev. 1 — 7 March 2012 11 of 13

NXP Semiconductors PMBT3904MB

40 V, 200 mA NPN switching tran si st o r

13. Legal information

13.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of device (s) descr ibed in th is docume nt may have cha nged since this docume nt was publis hed and ma y dif fer in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

13.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

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with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

office. In case of any inconsistency or conf lict with the short data sheet, the

full data sheet shall pre vail.

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data sheet shall define the specification of the product as agreed between

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Applications — Applications that are described herein for any of these

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representation or warranty tha t such application s will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and ope ration of their applications

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customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanent ly and irreversibly affect

the quality and reliability of the device.

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products are sold subject to the general terms and conditions of commercial

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Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the obj ective specification for product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] dat a sheet Production This document contains the product specification.

Product data sheet Rev. 1 — 7 March 2012 12 of 13

NXP Semiconductors PMBT3904MB

40 V, 200 mA NPN switching tran si st o r

Export control — This document as well as the item(s) described herein

may be subject to export control regulations. Export might require a prior

authorization from competent authorities.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

13.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respect i ve ow ners.

14. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors PMBT3904MB

40 V, 200 mA NPN switching tran si st o r

For more information, please visit: http://www.nxp.co m

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of rele ase: 7 March 2012

Document identifier: PMBT3904MB_1

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

15. Contents

1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

4.1 Binary marking code description. . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6 Thermal characteristics . . . . . . . . . . . . . . . . . . 4

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 8

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8

10 Packing information . . . . . . . . . . . . . . . . . . . . . 9

11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10

13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11

13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11

13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11

13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12

14 Contact information. . . . . . . . . . . . . . . . . . . . . 12

15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13