2007-04-20
1
BF998...
Silicon N_Channel MOSFET Tetrode
• Short-channel transistor
with high S / C quality factor
• For low-noise, gain-controlled
input stage up to 1 GHz
• Pb-free (RoHS compliant) package1)
• Qualified according AEC Q101
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type Package Pin Configuration Marking
BF998
BF998R SOT143
SOT143R 1=S
1=D 2=D
2=S 3=G2
3=G1 4=G1
4=G2 -
--
-MOs
MRs
Maximum Ratings
Parameter Symbol Value Unit
Drain-source voltage VDS 12 V
Continuous drain current ID30 mA
Gate 1/ gate 2-source current ±IG1/2SM 10
Total power dissipation
TS ≤ 76 °C, BF998, BF998R Ptot 200
Storage temperature Tstg -55 ... 150 °C
Channel temperature Tch 150
Thermal Resistance
Parameter Symbol Value Unit
Channel - soldering point2), BF998, BF998R Rthchs ≤ 370 K/W
1Pb-containing package may be available upon special request
2For calculation of RthJA please refer to Application Note Thermal Resistance
2007-04-20
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BF998...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Drain-source breakdown voltage
ID = 10 µA, VG1S = -4 V, VG2S = -4 V V(BR)DS 12 - - V
Gate 1 source breakdown voltage
±IG2S = 10 mA, VG2S = VDS = 0 ±V(BR)G1SS 8 - 12
Gate2 source breakdown voltage
±IG2S = 10 mA, VG2S = VDS = 0 ±V(BR)G2SS 8 - 12
Gate 1 source leakage current
±VG1S = 5 V, VG2S = VDS = 0 ±IG1SS - - 50 nA
Gate 2 source leakage current
±VG2S = 5 V, VG2S = VDS = 0 ±IG2SS - - 50 nA
Drain current
VDS = 8 V, VG1S = 0 , VG2S = 4 V IDSS 5 9 15 mA
Gate 1 source pinch-off voltage
VDS = 8 V, VG2S = 4 V, ID = 20 µA -VG1S(p) - 0.8 2.5 V
Gate 2 source pinch-off voltage
VDS = 8 V, VG1S = 0 , ID = 20 µA -VG2S(p) - 0.8 2
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BF998...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Forward transconductance
VDS = 8 V, ID = 10 mA, VG2S = 4 V gfs 20 24 - -
Gate1 input capacitance
VDS = 8 V, ID = 10 mA, VG2S = 4 V,
f = 10 MHz
Cg1ss - 2.1 2.5 pF
Gate 2 input capacitance
VDS = 8 V, ID = 10 mA, VG2S = 4 V,
f = 10 MHz
Cg2ss - 1.2 - pF
Feedback capacitance
VDS = 8 V, ID = 10 mA, VG2S = 4 V,
f = 10 MHz
Cdg1 - 25 - fF
Output capacitance
VDS = 8 V, ID = 10 mA, VG2S = 4 V,
f = 10 MHz
Cdss - 1.1 - pF
Power gain
VDS = 8 V, ID = 10 mA, VG2S = 4 V,
f = 45 MHz
VDS = 8 V, ID = 10 mA, VG2S = 4 V,
f = 800 MHz
Gp
-
-
28
20
-
-
dB
Noise figure
VDS = 8 V, ID = 10 mA, VG2S = 4 V,
f = 45 MHz
VDS = 8 V, ID = 10 mA, VG2S = 4 V,
f = 800 MHz
F
-
-
2.8
1.8
-
-
dB
Gain control range
VDS = 8 V, VG2S = 4 ...-2 V, f = 800 MHz ∆Gp40 50 -
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BF998...
Total power dissipation Ptot = ƒ(TS)
BF998, BF998R
0 15 30 45 60 75 90 105 120 °C 150
TS
0
20
40
60
80
100
120
140
160
180
mW
220
Ptot
Output characteristics ID = ƒ(VDS)
VG2S = 4 V
VG1S = Parameter
0 2 4 6 8 10 V14
VDS
0
2
4
6
8
10
12
14
16
18
20
22
mA
26
ID
0.4V
0.2V
0V
-0.2V
-0.4V
Gate 1 forward transconductance
gfs = ƒ(ID)
VDS = 5V, VG2S = Parameter
0 4 8 12 16 mA 24
ID
0
2
4
6
8
10
12
14
16
18
20
22
mS
26
gfs
4V
2V
1V
0V
Gate 1 forward transconductance
gfs1 = ƒ (VG1S)
-1 -0.75 -0.5 -0.25 0 0.25 V0.75
VG1S
0
2
4
6
8
10
12
14
16
18
20
22
mS
26
Gfs
4V
2V
1V
0V
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BF998...
Drain current ID = ƒ(VG1S)
VDS = 5V
VG2S = Parameter
-1 -0.75 -0.5 -0.25 0 0.25 0.5 V1
VG1S
0
5
10
15
20
mA
30
ID
4V 2V
1V
0V
Power gain Gps = ƒ (VG2S)
f = 45 MHz
0 1 2 V4
VG2S
0
5
10
15
20
dB
30
Gps
Noise figure F = ƒ (VG2S)
f = 45 MHz
0 1 2 V4
VG2S
0
1
2
3
4
5
6
7
8
dB
10
F
Noise figure F = ƒ (VG2S)
f = 800 MHz
0 1 2 V4
VG2S
0
1
2
3
dB
5
F
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BF998...
Power gain Gps = ƒ (VG2S)
f = 800 MHz
0 1 2 V4
VG2S
-10
-5
0
5
10
dB
20
Gps
Gate 1 input capacitance Cg1ss = ƒ (VG1S)
-3 -2.6 -2.2 -1.8 -1.4 -1 -0.6 V0.2
VG1S
1
1.2
1.4
1.6
1.8
2
2.2
pF
2.6
Cg1ss
Output capacitance Cdss = ƒ(VDS)
02468V12
VDS
0
0.5
1
1.5
2
2.5
3
pF
4
Cdss
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BF998...
Package SOT143
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
RFs
2005, June
Date code (YM)
BFP181
Type code
56
Pin 1
0.8 0.81.2
0.9 1.1 0.9
1.2
0.8 0.8
0.8-0.05
+0.1
1.9
1.7
±0.1
2.9
+0.1
-0.05
0.4
0.1 MAX.
12
34
0.25 MB
±0.1
1
10˚ MAX.
0.15 MIN.
0.2 A
M
2.4
±0.15
0.2
10˚ MAX.
A
1.3
±0.1
0...8˚
0.08...0.15
2.6
4
3.15
Pin 1
8
0.2
1.15
B
Manufacturer
2007-04-20
8
BF998...
Package SOT143R
1.1
0.8 0.81.2
0.90.9
0.8 0.8 1.2
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
2.6
4
3.15
Pin 1
8
0.2
1.15
Reverse bar
2005, June
Date code (YM)
BFP181R
Type code
Pin 1
1.9
1.7
0.4
-0.05
+0.1
+0.1
-0.05
0.8
B
0.25
M
B
2.9
±0.1
0.2
12
43
A
0˚... 8˚
10˚
10˚
0.1 MAX.
0.15 MIN.
1.3±0.1
2.4±0.15
1±0.1
0.08...0.15
A
M
0.2
MAX.
MAX.
Manufacturer
2007-04-20
9
BF998...
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
