Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
To all our customers
Cautions
Keep safety first in your circuit designs!
1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better
and more reliable, but th ere is always the possibility that trouble may occur with them. Trouble with
semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or
(iii) prevention against any malfunction or mishap.
Notes regar ding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas
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HVC383B
Variable Capacitance Diode for VCO
ADE-208-823(Z)
Rev. 0
Oct. 1999
Features
High capacitance ratio. (n =2. 0.min)
Low series resistance. (rs=0.5max)
Good C-V linearity.
Ultra small Flat Package (UFP) is suitable for surface mount design.
Ordering Information
Type No. Laser Mark Package Code
HVC383B F4 UFP
Pin Arrangement
12
F4
Cathode mark
Mark
1. Cathode
2. Anode
HVC383B
Rev.0, Oct. 1999, page 2 of 5
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Value Unit
Reverse voltage VR 15 V
Junction temperature Tj 125 °C
Storage temperature Tstg -55 to +125 °C
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition
Reverse current IR110 nA VR = 15V
I
R2100 VR = 15V, Ta =60°C
Capacitance C1 19.0 — 21.0 pF VR = 1V, f = 1 MHz
C
4 8.50 — 10.0 VR = 4V, f = 1 MHz
C
7 4.50 5.5 VR = 7V, f = 1 MHz
Capacitance ratio n1 2.00 C1 / C4
n
2 3.50 C1 / C7
Series resistance rs0.5 V
R = 1V, f = 470 MHz
HVC383B
Rev.0, Oct. 1999, page 3 of 5
Main Characteristic
10
Fig.4
LF
Vs. Reverse voltage
Reverse voltage VR (V)
Reverse current IR (A)
Fig.1 Reverse current Vs. Reverse voltage
Fig.3 Series resistance Vs. Reverse voltage
Fig.2 Capacitance Vs. Reverse voltage
Reverse voltage VR (V)
Capacitance C (pF)
Reverse voltage VR (V)
Series resistance r ( )
Reverse voltage VR (V)
s
0.8
0.4
10 1.0 10
0.2
0.6
-1
f=470MHz
L = (LogC)/ (LogV
FR
)
10 1.0 10
-1.4
-1.0
-0.6
-1
-0.2
40
20
0
10
30
-1
f=1MHz
1.0 10
01620
10-6
10-8
10-10
4812
10-13
10-12
10-11
10-7
10-9
Ta=75°C
Ta=50°C
Ta=25°C
HVC383B
Rev.0, Oct. 1999, page 4 of 5
Package Dimensions
Unit : mm
1.2 ± 0.10
1.6 ± 0.10
0.3 ± 0.05
0.8 ± 0.10
0.6 ± 0.10
12
F4
Cathode Mark
Hitachi Code
JEDECCode
EIAJCode
Mass(g)
UFP
SC-79
0.0016
1. Cathode
2. Anode
HVC383B
Rev.0, Oct. 1999, page 5 of 5
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for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
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consequential damage due to operation of the Hitachi product.
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products.
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Copyright © Hitachi, Ltd., 2001. All rights reserved. Printed in Japan.
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