a Logic-Level Power MOSFETs 3875081 GE SOLID state ox pe ff zazsce, cowsuuy a 739-7) RFM10N12L, RFM10N15L, RFP10N12L, RFP10N15L Power Logic Level MOSFETs N-Channel Logic Level Power Field-Effect Transistors (L? FET) 10 A, 120 V 150 V Posten: 0.3 Features: Design optimized for 5 volt gate drive Compatible with automotive drive requirements SOA is power-dissipation limited Nanosecond switching speeds Linear transfer characteristics High input impedance Majority carrier device The RFM1ON12L and RFM10N15L and the RFP10N12L and RFP10N15L are N-channel enhancement-mode silicon-gate power field-effect transistors designed for applications such as switching rgulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive power. These types can be operated directly from integrated circuits. The RFM-series types are supplied in the JEDEC TO- 204AA steel package and the RFP-series types in the JEDEC TO-220AB plastic package. Because of space limitations branding (marking) on type RFPION12L is F1ON12L and on type RFPIONI5L Is FION15L. *The RFM and RFP series were formerly RCA developmental numbers TA9530 and TA9531, respectively. Can be driven directly from Q-MOS, N-MOS, TTL Circuits File Number 1559 TERMINAL DIAGRAM $ 9208-33741 N-CHANNEL ENHANCEMENT MODE TERMINAL DESIGNATIONS RFM10N12L ORAIN RFMI0N15L SOURCE (FLANGE) Gare 92S- 37801 RFPION12t JEDEC TO-204AA RFPIONISL Ee (FLANGE] _ DaAIN O _ GATE 9208-59520 TOP VIEW JEDEC TO-220AB MAXIMUM RATINGS, Absolute-Maximum Values (Te = 25C): RFMION12L RFMIONISL RFPION12L 8 RFPTONISL DORAIN-SOURCE VOLTAGE ....... ccs eeneeeeee Voss 120 150 120 150 Vv DRAIN-GATE VOLTAGE (Rys= 1 MQ)... ree Voor 120 150 120 150 v GATE-SOURCE VOLTAGE .... ccc scccenenrenene Ves +10 Vv DRAIN CURRENT, RMS Continuous .............. lp 10 A Pulsed .. ccs ccacce rence eeneer lows 25 A POWER DISSIPATION @ Te = 25C..... 2. ee eee Py 75 76 60 60 Ww Derate above Tc = 25C 0.6 0.6 0.48 0.48 WC OPERATING AND STORAGE TEMPERATURFE voces ccsscecceeeteeeensrace Th Tag -6 to +150 C 3388 LL s.3875081 GE SOLID STATE Ql pe Wf sazsoan OOLBY4sS 3 T -39-}} Logic-Level Power OSFETs RFM10N12L, RFM10N15L, RFP10N12L, RFP10N15L ELECTRICAL CHARACTERISTICS, Al Case Temperature (Te = 25C) unless otherwise specified LIMITS TEST RFM10N12L RFMION15L CHARACTERISTIC SYMBOL CONDITIONS RFPION12L RFPIONI5SL UNITS MIN. MAX. MIN. MAX. Drain-Source Breakdown BVoss lb = 1 mA 120 - 150 _ v Voltage Ves = 0 Gate-Threshold Voltage Vasim Ves = Vos 1 2 2 Vv lp = 2mA Zero-Gate Voltage Drain loss Vos = 100 V - 1 - Current Vos = 120 V _ _ 1 To = 125C ! HA Vos = 100 V 50 - Vos = 120V _ 50 Gate-Source Leakage Current lass Ves = 10V - 100 100 nA Vos = 0 | Drain-Source On Voltage Vostont lp = 5A 15 +5 Vos =5V { Vv p= 10A _ 4 | 4 Vas =5V Static Drain-Source On Foston lo= 5A ~_ 0.3 0.3 2 Resistance Vos =5V a = Forward Transconductance Gts Vos . 10V 4.0 _ _ mho lbz=5A input Capacitance Ciss Vos = 25 V = 1200 1200 Output Capacitance Coss Ves= OV - 250 250 pF Reverse-Transfer Capacitance Cras f = 1MHz = 60 60 Turn-On Delay Time tation Voo = 75 V 15(typ) 60 15(typ) 60 Rise Time t e SA 50(typ) 135 50(typ) 135 ns Turn-Off Delay Time tatom Ros = 6250 90(typ) 135 90(typ) 138 Fall Time ti Vos = 5V 90(typ) 135 90(typ) 135 Thermal Resistance R8sc RFMION12L, 1.67 1.67 Junction-to-Gase REM10N15L : : CAN RFPIONI2L, _ 2.083 2.083 RFPIONT5L SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS LIMITS _ REM10N12L RFMI10N15L CHARACTERISTIC SYMBOL TEST CONDITIONS RFPION12L RFPIONISL | UNITS MIN. | MAX. | MIN. | MAX. Diode Forward Voltage Vs08 Isp = 5A - 1.4 - 1.4 Vv Reverse Recovery Time te le = 4A, dis/d) = 100 A/ps 150 (typ.) 150 (typ.) ns a Pulse Test: Width = 300 ys, Duty cycle = 2% SSE 3893875081 G E SOLID STATE gy pefj3a7so81 oo1s4us I T39-/) Logic-Level Power MOSFETs RFM10N12L, RFM10N15L, RFP10N12L, RFP10N15L | CASE TEMPERATURE (To} #25 % 6] (CURVES MUST BE DERATED LINEARLY WITH INCREASE iN 4. TEMPERATURE) 3 AREA iS LIMITED BY DRAIN=CURRENT (Ip)A Voss (MAX.} = 2OV(AFMIONI2L RFPIONIZL) (BAX) ISOWRFMIONISL RFPIONISL) 2 4 6 8 2 4 68 2 4 6 @ ' 10 $00 1000 ORAIN=-TO- SOURCE VOLTAGE {Vpg)-V S2CM- 36155 Fig. 1 - Maximum safe operating areas for all types, Vos* Toma 0 sO 100 CASE TEMPERATURE (Ted ee. saise JUNCTION TEMPERATURE (T,}*C 9203-38158 Fig. 2 - Power vs, temperature derating curve for all types. Fig. 3 - Typical normalized gate threshold voltage as a function of junction temperature for all types. Vpgt10V PULSE TEST PULSE DURATION OUTY CYCLES 2% - = a & 3 a : & v a4 6 i z 6 WHCTION TEMPERATURE (Ty }~ C GATE-TO-SOURCE VOLTAGE (Vgs)-V 9203-34199 9205-36160 Fig. 4 - Normalized drain-to-source on resistance vs. junction Fig, 5 - Typical transfer characteristics for all types. temperature for all types. 390~T eek ls ~ 3875081 GE SOLIO STATE O1 DE Qf 3875081 OOLa44? 7 W -39-77 Logic-Level Power MOSFETs RFM10N12L, RFM10N15L, RFP10N12L, RFP10N15L a am oe) 550 T T T 1 190 J ae ath 8Yoss DURATION , RL = 150 CYCLE $ 2% , oor Ig (REF) = 0.45 mA 4a TEMPERATURE 112.5 Vos = EY (To Je a L das $s GATE SOURCE 3 > VOLTAGE > [7s ! goL Yoo = Voss Yoo = Yoss dad ars 0.78 Voss 0.78 Voss eo L 0.50Vpgs 0.50 Voss da 0.25 Voss 0.25 Voss ORAIN SOURCE VOLTAGE o Q 20 Ig (REF) 80 ig (REF) Ig tact) Ig (ACT ORAIN-TO-SOURCE VOLTAGE IVpgh-V +, TIME Micraseconds ercs-37044 9208-3el6t Fig. 6 - Normalized switching waveforms for constant gate- Fig. 7 - Typical saturation characteristics for ail types. current drive. Reler to RGA Power MOSFETs PMP411A. FREQUENGY (f = 1 MHt TEST QURATIONe CAPACITANCE (C) pF 2 = a Ss w g z b a w w 3 e 2 6 a 2 z 4 = a GRAIN CURRENT (Ip)JA 92$-39162 ORAIN-TO-SOURCE VOLTAGE {pg) ov - 92C$-38163 Fig, 8 - Typical drain-to-source on resistance as a function Fig. 9 - Capacitance as a function of drain-to-source voltage for drain currant for all types. all types. PULSE TEST 152 TO SCOPE = Yoox 75V KELVIN CONTACT | a x < z : @ ARI ag = 92CS-30187 a 5 t DRAIN CURRENT (Ip) -A > 92CS-38164 Fig. 10 - Typical forward transconductance as a function of drain Fig. 11 - Switching Time Test Circuit. current for all types. - 391 len .