IPG20N06S4-15
OptiMOS™-T2 Power-Transistor
Features
• Dual N-channel Normal Level - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
one channel active IDTC=25 °C, VGS=10 V1) 20 A
TC=100 °C,
VGS=10 V2) 20
Pulsed drain current2)
one channel active ID,pulse -80
Avalanche energy, single pulse2, 4) EAS ID=10A 90 mJ
Avalanche current, single pulse4) IAS -15 A
Gate source voltage VGS - ±20 V
Power dissipation
one channel active Ptot TC=25 °C 50 W
Operating and storage temperature Tj,Tstg - -55 ... +175 °C
Value
VDS 60
V
R
DS(on),max
4) 15.5 mW
ID20 A
Product Summary
Type Package Marking
IPG20N06S4-15 PG-TDSON-8-4 4N0615
PG-TDSON-8-4
Rev. 1.0 page 1 2010-10-05
IPG20N06S4-15
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics2)
Thermal resistance, junction - case RthJC - - - 3 K/W
SMD version, device on PCB RthJA minimal footprint - 100 -
6 cm2cooling area3) - 60 -
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS=0 V, ID= 1 mA 60 - - V
Gate threshold voltage VGS(th) VDS=VGS,ID=20 µA 2.0 3.0 4.0
Zero gate voltage drain current4) IDSS VDS=60 V, VGS=0 V,
Tj=25 °C - 0.01 1 µA
VDS=60 V, VGS=0 V,
Tj=125 °C2) - 5 100
Gate-source leakage current4) IGSS VGS=16 V, VDS=0 V - - 100 nA
Drain-source on-state resistance4) RDS(on) VGS=10 V, ID=17 A - 12.9 15.5 mW
Values
Rev. 1.0 page 2 2010-10-05
IPG20N06S4-15
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
2)
Input capacitance4) Ciss - 1740 2260 pF
Output capacitance4) Coss - 430 560
Reverse transfer capacitance4) Crss - 19 38
Turn-on delay time td(on) - 12 - ns
Rise time tr- 2 -
Turn-off delay time td(off) - 17 -
Fall time tf- 9 -
Gate Charge Characteristics
2, 4)
Gate to source charge Qgs - 9 12 nC
Gate to drain charge Qgd - 2.2 4.4
Gate charge total Qg- 22 29
Gate plateau voltage Vplateau - 5.3 - V
Reverse Diode
Diode continous forward current2)
one channel active IS- - 20 A
Diode pulse current2)
one channel active IS,pulse - - 80
Diode forward voltage VSD VGS=0 V, IF=17 A,
Tj=25 °C - 0.95 1.3 V
Reverse recovery time2) trr VR=30 V, IF=IS,
diF/dt=100 A/µs - 35 - ns
Reverse recovery charge2, 4) Qrr - 35 - nC
4)
Per channel
TC=25 °C
Values
VGS=0 V, VDS=25 V,
f=1 MHz
VDD=30 V, VGS=10 V,
ID=20 A, RG=11 W
VDD=48 V, ID=20 A,
VGS=0 to 10 V
2) Specified by design. Not subject to production test.
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
1) Current is limited by bondwire; with an RthJC = 3K/W the chip is able to carry 43A at 25°C.
Rev. 1.0 page 3 2010-10-05
IPG20N06S4-15
1 Power dissipation 2 Drain current
Ptot = f(TC); VGS ≥ 6 V; one channel active ID= f(TC); VGS ≥ 6 V; one channel active
3 Safe operating area 4 Max. transient thermal impedance
ID=f(VDS); TC=25°C; D=0; one channel active ZthJC = f(tp)
parameter: tpparameter: D=tp/T
1 µs
10 µs
100 µs
1 ms
0.1
1
10
100
0.1 1 10 100
VDS [V]
ID[A]
single pulse
0.01
0.05
0.1
0.5
100
10-1
10-2
10-3
10-4
10-5
10-6
101
100
10-1
10-2
tp[s]
ZthJC [K/W]
0
10
20
30
40
50
60
0 50 100 150 200
TC[°C]
Ptot [W]
0
5
10
15
20
25
0 50 100 150 200
TC[°C]
ID[A]
Rev. 1.0 page 4 2010-10-05
IPG20N06S4-15
5 Typ. output characteristics4) 6 Typ. drain-source on-state resistance4)
ID= f(VDS); Tj= 25 °C RDS(on) = f(ID); Tj= 25 °C
parameter: VGS parameter: VGS
7 Typ. transfer characteristics4) 8 Typ. drain-source on-state resistance4)
ID= f(VGS); VDS = 6V RDS(on) = f(Tj); ID= 17 A; VGS = 10 V
parameter: Tj
5
10
15
20
25
-60 -20 20 60 100 140 180
Tj[°C]
RDS(on) [mW]
5 V
5.5 V
6 V
6.5 V
7 V10 V
0
20
40
60
80
02468
VDS [V]
ID[A]
5 V 5.5 V 6 V 6.5 V
10 V
10
20
30
40
50
0 20 40 60 80
ID[A]
RDS(on) [mW]
-55 °C
25 °C 175 °C
0
20
40
60
80
1234567
VGS [V]
ID[A]
Rev. 1.0 page 5 2010-10-05
IPG20N06S4-15
9 Typ. gate threshold voltage 10 Typ. Capacitances4)
VGS(th) = f(Tj); VGS =VDS C= f(VDS); VGS = 0 V; f= 1 MHz
parameter: ID
11 Typical forward diode characteristicis4) 12 Avalanche characteristics4)
IF = f(VSD)IA S= f(tAV)
parameter: Tjparameter: Tj(start)
25 °C
100 °C
150 °C
0.1
1
10
100
1 10 100 1000
tAV [µs]
IAV [A]
25 °C
175 °C
102
101
100
0 0.2 0.4 0.6 0.8 1 1.2 1.4
VSD [V]
IF[A]
20µA
200µA
1
1.5
2
2.5
3
3.5
4
-60 -20 20 60 100 140 180
Tj[°C]
VGS(th) [V]
Ciss
Coss
Crss
104
101
102
103
0 5 10 15 20 25 30
VDS [V]
C[pF]
Rev. 1.0 page 6 2010-10-05
IPG20N06S4-15
13 Avalanche energy4) 14 Drain-source breakdown voltage
EAS = f(Tj), ID= 10A VBR(DSS) = f(Tj); ID= 1 mA
15 Typ. gate charge4) 16 Gate charge waveforms
VGS = f(Qgate); ID= 20 A pulsed
parameter: VDD
VGS
Qgate
Vgs(th)
Qg(th)
Qgs Qgd
Qsw
Qg
55
57
59
61
63
65
-60 -20 20 60 100 140 180
Tj[°C]
VBR(DSS) [V]
12 V
48 V
0
2
4
6
8
10
12
0 5 10 15 20 25
Qgate [nC]
VGS [V]
0
20
40
60
80
100
25 50 75 100 125 150 175
Tj[°C]
EAS [mJ]
Rev. 1.0 page 7 2010-10-05
IPG20N06S4-15
Published by
Infineon Technologies AG
©
Infineon Technologies AG 2010
All Rights Reserved.
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The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
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For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (
www.infineon.com
).
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Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0 page 8 2010-10-05
IPG20N06S4-15
Revision History
Version
Revision 1.0
Date
05.10.2010
Changes
Data Sheet revision 1.0
Rev. 1.0 page 9 2010-10-05