BLF3G21-30 UHF power LDMOS transistor Rev. 01 -- 14 February 2007 Product data sheet 1. Product profile 1.1 General description 30 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz. Table 1. Typical class-AB RF performance IDq = 450 mA; Th = 25 C in a common source test circuit. PL Gp D Mode of operation f IMD3 PL(1dB) (MHz) (W) (dB) (%) (dB) (W) CW 2000 36 12.5 43 - 36 Two-tone 2000 30 13.5 35 -26 - 0.1 to 10 13.8 - < -50 - Table 2. Typical class-A RF performance IDq = 1 A; Th = 25 C in a modified PHS test fixture. Mode of operation PHS f PL(AV) Gp D ACPR600 (MHz) (W) (dB) (%) (dBc) 1880 to 1920 9 16 20 -75 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features n Excellent back-off linearity n Typical PHS performance at a supply voltage of 26 V and IDq of 1 A: u Average output power = 9 W u Gain = 16 dB (typ) u Efficiency = 20 % u ACPR600 = -75 dBc n Easy power control n Excellent ruggedness n High power gain n Excellent thermal stability n Designed for broadband operation (HF to 2200 MHz) BLF3G21-30 NXP Semiconductors UHF power LDMOS transistor n No internal matching for broadband operation n ESD protection 1.3 Applications n RF power amplifiers for GSM, PHS, EDGE, CDMA and W-CDMA base stations and multicarrier applications in the HF to 2200 MHz frequency range n Broadcast drivers 2. Pinning information Table 3. Pinning Pin Description 1 drain 2 gate 3 source Simplified outline Symbol 1 1 [1] 3 2 3 2 [1] sym112 Connected to flange 3. Ordering information Table 4. Ordering information Type number Package Name Description Version BLF3G21-30 - flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT467C 4. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Min Max Unit VDS drain-source voltage Conditions - 65 V VGS gate-source voltage - 15 V ID drain current - 4.5 A Tstg storage temperature -65 +150 C Tj junction temperature - 200 C BLF3G21-30_1 Product data sheet (c) NXP B.V. 2007. All rights reserved. Rev. 01 -- 14 February 2007 2 of 12 BLF3G21-30 NXP Semiconductors UHF power LDMOS transistor 5. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Typ Unit Rth(j-c) thermal resistance from junction to case Th = 25 C; PL(AV) = 15 W [1] Rth(j-h) thermal resistance from junction to heatsink Th = 25 C; PL(AV) = 15 W [2] [1] Thermal resistance is determined under specified RF operating conditions [2] Depending on mounting condition in application 1.6 K/W 2.1 K/W 6. Characteristics Table 7. Characteristics Tj = 25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.7 mA 65 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 70 mA 2.0 - 3.0 V IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 5 A IDSX drain cut-off current VGS = VGS(th) + 9 V; VDS = 10 V 9 - - A IGSS gate leakage current VGS = 15 V; VDS = 0 V - - 11 nA gfs transfer conductance VDS = 10 V; ID = 2.5 A - 3 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 9 V; ID = 2.5 A - 0.3 - Crs feedback capacitance VGS = 0 V; VDS = 28 V; f = 1 MHz - 1.7 - pF Max Unit 7. Application information Table 8. Application information VDS = 26 V; Th = 25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Mode of operation: Two-tone CW (100 kHz tone spacing); f = 2000 MHz; IDq = 450 mA Gp power gain PL(PEP) = 30 W 12.5 13.5 - dB RLin input return loss PL(PEP) = 30 W - -16 -11 dB D drain efficiency PL(PEP) = 30 W 32 35.0 - % IMD3 third order intermodulation distortion PL(PEP) = 30 W - -26 -23 dBc PL(PEP) < 10 W - < -50 - dBc Mode of operation: one-tone CW; f = 2000 MHz; IDq = 450 mA Gp power gain PL = PL(1dB) = 36 W - 12.5 - dB D drain efficiency PL = PL(1dB) = 36 W - 43 - % Mode of operation: PHS; f = 1900 MHz; IDq = 1 A Gp power gain PL(AV) = 9 W - 16 - dB D drain efficiency PL(AV) = 9 W - 20 - % BLF3G21-30_1 Product data sheet (c) NXP B.V. 2007. All rights reserved. Rev. 01 -- 14 February 2007 3 of 12 BLF3G21-30 NXP Semiconductors UHF power LDMOS transistor 7.1 Ruggedness in class-AB operation The BLF3G21-30 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 26 V; f = 2200 MHz at rated load power. 001aaf790 15 001aaf791 50 d (%) Gp (dB) 13 40 11 30 9 20 7 10 5 10-1 1 0 10-1 102 10 1 PL (W) VDS = 26 V; IDq = 450 mA; Th = 25 C; f = 2000 MHz Fig 1. Power gain as function of CW load power; typical values 001aaf792 15 Gp (dB) 102 10 PL (W) 50 d (%) Gp 13 40 11 30 VDS = 26 V; IDq = 450 mA; Th = 25 C; f = 2000 MHz Fig 2. Drain efficiency as function of CW load power; typical values 001aaf793 0 IMD (dBc) -20 -40 20 9 IMD3 -60 7 10 D IMD5 IMD7 5 10-1 0 1 102 10 -80 10-1 PL(PEP) (W) VDS = 26 V; IDq = 450 mA; Th 25 C; f1 = 2000 MHz; f2 = 2000.1 MHz 102 10 PL(PEP) (W) VDS = 26 V; IDq = 450 mA; Th 25 C; f1 = 2000 MHz; f2 = 2000.1 MHz Fig 3. Two-tone power gain and drain efficiency as functions of peak envelope load power; typical values Fig 4. Two-tone intermodulation distortion as function of peak envelope load power; typical values BLF3G21-30_1 Product data sheet 1 (c) NXP B.V. 2007. All rights reserved. Rev. 01 -- 14 February 2007 4 of 12 BLF3G21-30 NXP Semiconductors UHF power LDMOS transistor 001aaf794 -10 001aaf795 102 Coss (1) C (pF) ACPR (dB) -50 Ciss 10 (2) (3) Crss -90 (6) (7) (4) -130 -1.0 1 (5) 10-1 -0.5 0 0.5 f (MHz) 1.0 0 10 20 30 40 50 VDS (V) (1) 192 kHz channel bandwidth (2) -ACPR300 at 192 kHz bandwidth (3) +ACPR300 at 192 kHz bandwidth (4) -ACPR600 at 192 kHz bandwidth (5) +ACPR600 at 192 kHz bandwidth (6) -ACPR900 at 192 kHz bandwidth (7) +ACPR900 at 192 kHz bandwidth VDS = 26 V; IDq = 1000 mA; Th 25 C; fc = 1900 MHz; PL(AV) = 9 W Fig 5. ACPR performance under PHS conditions, measured in application board Fig 6. Ciss, Crss and Coss as functions of drain supply voltage; typical values 001aaf796 5 Zi () 001aaf797 6 ZL () 4 2 RL 3 Xi 2 -2 XL 1 Ri 0 1.8 1.9 2.0 2.1 2.2 -6 1.8 f (GHz) VDS = 26 V; IDq = 450 mA; PL = 45 W; Th 25 C Fig 7. Input impedance as function of frequency (series components); typical values 2.0 2.1 2.2 f (GHz) VDS = 26 V; IDq = 450 mA; PL = 45 W; Th 25 C Fig 8. Load impedance as function of frequency (series components); typical values BLF3G21-30_1 Product data sheet 1.9 (c) NXP B.V. 2007. All rights reserved. Rev. 01 -- 14 February 2007 5 of 12 xxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx x xxxxxxxxxxxxxx xxxxxxxxxx xxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxx xx xxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxx xxxxxxxxxxxxxx xxxxxx xx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxx x x NXP Semiconductors 8. Test information BLF3G21-30_1 Product data sheet F1 R2 Rev. 01 -- 14 February 2007 Vdd R1 C11 Vgate C12 C13 C15 C14 C16 C6 C5 L12 L4 C10 50 input L10 C1 C9 L14 L1 L2 L3 C2 L5 L9 L6 C4 C7 L7 L8 L13 L15 L16 50 output C8 001aaf798 BLF3G21-30 UHF power LDMOS transistor 6 of 12 (c) NXP B.V. 2007. All rights reserved. Fig 9. Class-AB test circuit for 2 GHz L11 BLF3G21-30 NXP Semiconductors UHF power LDMOS transistor 50 mm 50 mm 60 mm PH98072 IN PH98073 OUT C15 C11 F1 C6 C16 C12 + R1 R2 C5 50 input C13 C14 C10 C1 C2 C9 C4 PH98072 IN C7 50 output C8 PH98073 OUT 001aaf799 The components are situated on one side of the copper-clad Printed-Circuit Board (PCB) with Teflon dielectric (r = 6.15); thickness = 0.64 mm. The other side is unetched and serves as a ground plane. See Table 9 for a list of components. Fig 10. Component layout for 2 GHz class-AB test circuit BLF3G21-30_1 Product data sheet (c) NXP B.V. 2007. All rights reserved. Rev. 01 -- 14 February 2007 7 of 12 BLF3G21-30 NXP Semiconductors UHF power LDMOS transistor Table 9. List of components (see Figure 9 and Figure 10) Component Description Value C1, C9 multilayer ceramic chip capacitor C2, C4, C7, C8 Tekelec variable capacitor; type 37271 C5, C10 multilayer ceramic chip capacitor C6, C13, C14, C15 tantalum SMD capacitor [2] 11 pF [1] 12 pF Dimensions Catalogue No. 0.6 pF to 4.5 pF 4.5 F; 50 V [2] 1 nF C11 multilayer ceramic chip capacitor C12 multilayer ceramic chip capacitor 100 nF 2222 581 16641 C16 electrolytic capacitor 100 F; 63 V 2222 037 58101 F1 ferrite SMD bead 8DS3/3/8/9-4S2 4330 030 36301 stripline [3] 50 L2 stripline [3] 50 2 mm x 0.9 mm L3 stripline [3] 34.3 15 mm x 1.7 mm L4, L12 stripline [3] 50 37 mm x 0.9 mm stripline [3] 34.3 6 mm x 1.7 mm L6 stripline [3] 23.6 13 mm x 2.9 mm L7 stripline [3] 5.6 6 mm x 15.8 mm stripline [3] 3.5 6 mm x 26 mm stripline [3] 31.9 12 mm x 1.9 mm L10 stripline [3] 24.9 7.4 mm x 2.7 mm L11 stripline [3] 50 3 mm x 0.9 mm stripline [3] 50 4.15 mm x 0.9 mm stripline [3] 26.3 2.5 mm x 2.5 mm L15 stripline [3] 50 2.8 mm x 0.9 mm L16 stripline [3] 50 14 mm x 0.9 mm R1, R2 metal film resistor L1 L5 L8 L9 L13 L14 10 ; 0.6 W 13 mm x 0.9 mm 2322 156 11009 [1] American Technical Ceramics type 100B or capacitor of same quality [2] American Technical Ceramics type 100A or capacitor of same quality [3] The striplines are on a double copper-clad Printed-Circuit Board (PCB) with Teflon dielectric (r = 6.15); thickness = 0.64 mm BLF3G21-30_1 Product data sheet (c) NXP B.V. 2007. All rights reserved. Rev. 01 -- 14 February 2007 8 of 12 BLF3G21-30 NXP Semiconductors UHF power LDMOS transistor 9. Package outline Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT467C D A F 3 D1 U1 B q c C 1 E1 H U2 E A w1 M A M B M p 2 Q w2 M C M b 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D1 E E1 F H p Q q U1 U2 w1 w2 mm 4.67 3.94 5.59 5.33 0.15 0.10 9.25 9.04 9.27 9.02 5.92 5.77 5.97 5.72 1.65 1.40 18.54 17.02 3.43 3.18 2.21 1.96 14.27 20.45 20.19 5.97 5.72 0.25 0.51 inch 0.184 0.220 0.006 0.155 0.210 0.004 0.364 0.365 0.356 0.355 0.233 0.227 0.235 0.065 0.225 0.055 0.73 0.67 0.135 0.087 0.805 0.235 0.562 0.010 0.020 0.125 0.077 0.795 0.225 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 99-12-06 99-12-28 SOT467C Fig 11. Package outline SOT467C BLF3G21-30_1 Product data sheet (c) NXP B.V. 2007. All rights reserved. Rev. 01 -- 14 February 2007 9 of 12 BLF3G21-30 NXP Semiconductors UHF power LDMOS transistor 10. Abbreviations Table 10. Abbreviations Acronym Description CDMA Code Division Multiple Access EDGE Enhanced Data rates for the GSM Evolution GSM Global System for Mobile communications HF High Frequency LDMOS Laterally Diffused Metal Oxide Semiconductor LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor PHS Personal HandyPhone System RF Radio Frequency SMD Surface-Mount Device UHF Ultra High Frequency VSWR Voltage Standing-Wave Ratio W-CDMA Wideband Code Division Multiple Access 11. Revision history Table 11. Revision history Document ID Release date Data sheet status Change notice Supersedes BLF3G21-30_1 20070214 Product data sheet - - BLF3G21-30_1 Product data sheet (c) NXP B.V. 2007. All rights reserved. Rev. 01 -- 14 February 2007 10 of 12 BLF3G21-30 NXP Semiconductors UHF power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term `short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 12.3 Disclaimers General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com BLF3G21-30_1 Product data sheet (c) NXP B.V. 2007. All rights reserved. Rev. 01 -- 14 February 2007 11 of 12 BLF3G21-30 NXP Semiconductors UHF power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation. . . . . . . . . . 4 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'. (c) NXP B.V. 2007. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 14 February 2007 Document identifier: BLF3G21-30_1