BLF3G21-30,112 - NXP Semiconductors / Philips Semiconductors

1. Product proﬁle

1.1 General description

30 W LDMOS power transistor for base station applications at frequencies from

HF to 2200 MHz.

1.2 Features

nExcellent back-off linearity

nTypical PHS performance at a supply voltage of 26 V and IDq of 1 A:

uAverage output power=9W

uGain = 16 dB (typ)

uEfﬁciency = 20 %

uACPR600 =−75 dBc

nEasy power control

nExcellent ruggedness

nHigh power gain

nExcellent thermal stability

nDesigned for broadband operation (HF to 2200 MHz)

BLF3G21-30

UHF power LDMOS transistor

Rev. 01 — 14 February 2007 Product data sheet

Table 1. Typical class-AB RF performance

= 450 mA; T

= 25

C in a common source test circuit.

Mode of operation f PLGpηDIMD3 PL(1dB)

(MHz) (W) (dB) (%) (dB) (W)

CW 2000 36 12.5 43 - 36

Two-tone 2000 30 13.5 35 −26 -

0.1 to 10 13.8 - < −50 -

Table 2. Typical class-A RF performance

= 1 A; T

= 25

C in a modiﬁed PHS test ﬁxture.

Mode of operation f PL(AV) GpηDACPR600

(MHz) (W) (dB) (%) (dBc)

PHS 1880 to 1920 9 16 20 −75

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

Product data sheet Rev. 01 — 14 February 2007 2 of 12

NXP Semiconductors BLF3G21-30

UHF power LDMOS transistor

nNo internal matching for broadband operation

nESD protection

1.3 Applications

nRF power ampliﬁers for GSM, PHS, EDGE, CDMA and W-CDMA base stations and

multicarrier applications in the HF to 2200 MHz frequency range

nBroadcast drivers

2. Pinning information

[1] Connected to ﬂange

3. Ordering information

4. Limiting values

Table 3. Pinning

Pin Description Simpliﬁed outline Symbol

1 drain

2 gate

3 source [1]

sym112

Table 4. Ordering information

Type number Package

Name Description Version

BLF3G21-30 - ﬂanged LDMOST ceramic package; 2 mounting holes;

2 leads SOT467C

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VDS drain-source voltage - 65 V

VGS gate-source voltage - ±15 V

IDdrain current - 4.5 A

Tstg storage temperature −65 +150 °C

Tjjunction temperature - 200 °C

Product data sheet Rev. 01 — 14 February 2007 3 of 12

NXP Semiconductors BLF3G21-30

UHF power LDMOS transistor

5. Thermal characteristics

[1] Thermal resistance is determined under speciﬁed RF operating conditions

[2] Depending on mounting condition in application

6. Characteristics

7. Application information

Table 6. Thermal characteristics

Symbol Parameter Conditions Typ Unit

Rth(j-c) thermal resistance from junction to case Th = 25 °C; PL(AV) =15W [1] 1.6 K/W

Rth(j-h) thermal resistance from junction to heatsink Th = 25 °C; PL(AV) =15W [2] 2.1 K/W

Table 7. Characteristics

= 25

C unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

V(BR)DSS drain-source breakdown

voltage VGS =0V; I

D= 0.7 mA 65 - - V

VGS(th) gate-source threshold voltage VDS = 10 V; ID= 70 mA 2.0 - 3.0 V

IDSS drain leakage current VGS =0V; V

DS =28V --5µA

IDSX drain cut-off current VGS =V

GS(th) +9 V;

VDS =10V 9- - A

IGSS gate leakage current VGS =±15 V; VDS =0V - - 11 nA

gfs transfer conductance VDS = 10 V; ID= 2.5 A - 3 - S

RDS(on) drain-source on-state

resistance VGS =V

GS(th) +9V;I

D= 2.5 A - 0.3 - Ω

Crs feedback capacitance VGS =0V; V

DS =28V;

f=1MHz - 1.7 - pF

Table 8. Application information

= 26 V; T

= 25

C unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

Mode of operation: Two-tone CW (100 kHz tone spacing); f = 2000 MHz; IDq = 450 mA

Gppower gain PL(PEP) = 30 W 12.5 13.5 - dB

RLin input return loss PL(PEP) =30W - −16 −11 dB

ηDdrain efﬁciency PL(PEP) = 30 W 32 35.0 - %

IMD3 third order intermodulation

distortion PL(PEP) =30W - −26 −23 dBc

PL(PEP) < 10 W - < −50 - dBc

Mode of operation: one-tone CW; f = 2000 MHz; IDq = 450 mA

Gppower gain PL=P

L(1dB) = 36 W - 12.5 - dB

ηDdrain efﬁciency PL=P

L(1dB) = 36 W - 43 - %

Mode of operation: PHS; f = 1900 MHz; IDq = 1 A

Gppower gain PL(AV) = 9 W - 16 - dB

ηDdrain efﬁciency PL(AV) =9W - 20 - %

Product data sheet Rev. 01 — 14 February 2007 4 of 12

NXP Semiconductors BLF3G21-30

UHF power LDMOS transistor

7.1 Ruggedness in class-AB operation

The BLF3G21-30 is capable of withstanding a load mismatch corresponding to

VSWR = 10 : 1 through all phases under the following conditions: VDS =26V;

f = 2200 MHz at rated load power.

VDS = 26 V; IDq = 450 mA; Th = 25 °C; f = 2000 MHz VDS = 26 V; IDq = 450 mA; Th = 25 °C; f = 2000 MHz

Fig 1. Power gain as function of CW load power;

typical values Fig 2. Drain efﬁciency as function of CW load power;

typical values

VDS = 26 V; IDq = 450 mA; Th ≤ 25 °C;

f1= 2000 MHz; f2 = 2000.1 MHz VDS = 26 V; IDq = 450 mA; Th ≤ 25 °C;

f1= 2000 MHz; f2 = 2000.1 MHz

Fig 3. Two-tone power gain and drain efﬁciency as

functions of peak envelope load power; typical

values

Fig 4. Two-tone intermodulation distortion as function

of peak envelope load power; typical values

PL (W)

10−1102

101

001aaf790

(dB)

PL (W)

10−1102

101

001aaf791

ηd

(%)

PL(PEP) (W)

10−1102

101

001aaf792

(dB) ηd

(%)

ηD

001aaf793

−40

−60

−20

IMD

(dBc)

−80

PL(PEP) (W)

10−1102

101

IMD3

IMD5

IMD7

Product data sheet Rev. 01 — 14 February 2007 5 of 12

NXP Semiconductors BLF3G21-30

UHF power LDMOS transistor

(1) 192 kHz channel bandwidth

(2) −ACPR300 at 192 kHz bandwidth

(3) +ACPR300 at 192 kHz bandwidth

(4) −ACPR600 at 192 kHz bandwidth

(5) +ACPR600 at 192 kHz bandwidth

(6) −ACPR900 at 192 kHz bandwidth

(7) +ACPR900 at 192 kHz bandwidth

VDS = 26 V; IDq = 1000 mA; Th≤ 25 °C;

fc= 1900 MHz; PL(AV) = 9 W

Fig 5. ACPR performance under PHS conditions,

measured in application board Fig 6. Ciss, Crss and Coss as functions of drain supply

voltage; typical values

VDS = 26 V; IDq = 450 mA; PL = 45 W; Th≤ 25 °CV

DS = 26 V; IDq = 450 mA; PL = 45 W; Th≤ 25 °C

Fig 7. Input impedance as function of frequency

(series components); typical values Fig 8. Load impedance as function of frequency

(series components); typical values

∆f (MHz)

−1.0 1.00.5−0.5 0

001aaf794

−90

−50

−10

ACPR

(dB)

−130

(1)

(2)

(6) (7)

(5)(4)

(3)

001aaf795

102

(pF)

10−1

VDS (V)

0504020 3010

Coss

Ciss

Crss

f (GHz)

1.8 2.22.11.9 2.0

001aaf796

(Ω)

f (GHz)

1.8 2.22.11.9 2.0

001aaf797

−2

(Ω)

−6

xxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx x xxxxxxxxxxxxxx xxxxxxxxxx xxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxx

xxxxx xxxxxx xx xxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxxxx xxxxxxxxxxxxxxxxxxx

xxxxxxxxxxxxxxxx xxxxxxxxxxxxxx xxxxxx xx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx

xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxx x x

Product data sheet Rev. 01 — 14 February 2007 6 of 12

NXP Semiconductors BLF3G21-30

UHF power LDMOS transistor

8. Test information

Fig 9. Class-AB test circuit for 2 GHz

001aaf798

C2 C4 C7 C8

L16L15

L14

L13

L11

L10

L12

L1 L2 L3

L5 L6

C10

C11 C12

C14 C15 C16

C13

Vdd

Vgate

50 Ω

output

50 Ω

input

Product data sheet Rev. 01 — 14 February 2007 7 of 12

NXP Semiconductors BLF3G21-30

UHF power LDMOS transistor

The components are situated on one side of the copper-clad Printed-Circuit Board (PCB) with Teﬂon dielectric (εr = 6.15);

thickness = 0.64 mm. The other side is unetched and serves as a ground plane.

See Table 9 for a list of components.

Fig 10. Component layout for 2 GHz class-AB test circuit

C1 C2

PH98072 IN PH98073 OUT

50 mm

C10

001aaf799

C15

C16

C14 C13 C11

C12

C7 C8

50 Ω

input 50 Ω

output

50 mm

Product data sheet Rev. 01 — 14 February 2007 8 of 12

NXP Semiconductors BLF3G21-30

UHF power LDMOS transistor

[1] American Technical Ceramics type 100B or capacitor of same quality

[2] American Technical Ceramics type 100A or capacitor of same quality

[3] The striplines are on a double copper-clad Printed-Circuit Board (PCB) with Teﬂon dielectric (εr = 6.15); thickness = 0.64 mm

Table 9. List of components (see Figure 9 and Figure 10)

Component Description Value Dimensions Catalogue No.

C1, C9 multilayer ceramic chip capacitor [2] 11 pF

C2, C4, C7, C8 Tekelec variable capacitor; type 37271 0.6 pF to 4.5 pF

C5, C10 multilayer ceramic chip capacitor [1] 12 pF

C6, C13, C14, C15 tantalum SMD capacitor 4.5 µF; 50 V

C11 multilayer ceramic chip capacitor [2] 1 nF

C12 multilayer ceramic chip capacitor 100 nF 2222 581 16641

C16 electrolytic capacitor 100 µF; 63 V 2222 037 58101

F1 ferrite SMD bead 8DS3/3/8/9-4S2 4330 030 36301

L1 stripline [3] 50 Ω13 mm × 0.9 mm

L2 stripline [3] 50 Ω2 mm × 0.9 mm

L3 stripline [3] 34.3 Ω15 mm × 1.7 mm

L4, L12 stripline [3] 50 Ω37 mm × 0.9 mm

L5 stripline [3] 34.3 Ω6 mm × 1.7 mm

L6 stripline [3] 23.6 Ω13 mm × 2.9 mm

L7 stripline [3] 5.6 Ω6 mm × 15.8 mm

L8 stripline [3] 3.5 Ω6 mm × 26 mm

L9 stripline [3] 31.9 Ω12 mm × 1.9 mm

L10 stripline [3] 24.9 Ω7.4 mm × 2.7 mm

L11 stripline [3] 50 Ω3 mm × 0.9 mm

L13 stripline [3] 50 Ω4.15 mm ×0.9 mm

L14 stripline [3] 26.3 Ω2.5 mm × 2.5 mm

L15 stripline [3] 50 Ω2.8 mm × 0.9 mm

L16 stripline [3] 50 Ω14 mm × 0.9 mm

R1, R2 metal ﬁlm resistor 10 Ω; 0.6 W 2322 156 11009

Product data sheet Rev. 01 — 14 February 2007 9 of 12

NXP Semiconductors BLF3G21-30

UHF power LDMOS transistor

9. Package outline

Fig 11. Package outline SOT467C

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

SOT467C 99-12-06

99-12-28

0 5 10 mm

scale

Flanged LDMOST ceramic package; 2 mounting holes; 2 leads

0.15

0.10

5.59

5.33 9.25

9.04 1.65

1.40 18.54

17.02

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

3.43

3.18

4.67

3.94 2.21

1.96

U2E

UNIT Q

9.27

9.02

5.92

5.77

5.97

5.72

E1FH p q

0.184

0.155

inch

14.27 20.45

20.19

5.97

5.72 0.25

0.51

0.006

0.004

0.220

0.210 0.364

0.356 0.065

0.055 0.73

0.67 0.135

0.125 0.087

0.077

0.365

0.355 0.233

0.227 0.235

0.225 0.562 0.805

0.795 0.235

0.225 0.010 0.020

M M

Aw1

M M M

SOT467C

Product data sheet Rev. 01 — 14 February 2007 10 of 12

NXP Semiconductors BLF3G21-30

UHF power LDMOS transistor

10. Abbreviations

11. Revision history

Table 10. Abbreviations

Acronym Description

CDMA Code Division Multiple Access

EDGE Enhanced Data rates for the GSM Evolution

GSM Global System for Mobile communications

HF High Frequency

LDMOS Laterally Diffused Metal Oxide Semiconductor

LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor

PHS Personal HandyPhone System

RF Radio Frequency

SMD Surface-Mount Device

UHF Ultra High Frequency

VSWR Voltage Standing-Wave Ratio

W-CDMA Wideband Code Division Multiple Access

Table 11. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BLF3G21-30_1 20070214 Product data sheet - -

Product data sheet Rev. 01 — 14 February 2007 11 of 12

NXP Semiconductors BLF3G21-30

UHF power LDMOS transistor

12. Legal information

12.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Deﬁnitions”.

[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

12.2 Deﬁnitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modiﬁcations or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

ofﬁce. In case of any inconsistency or conﬂict with the short data sheet, the

full data sheet shall prevail.

12.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconductors does not give any representations or

warranties, expressed or implied, as to the accuracy or completeness of such

information and shall have no liability for the consequences of use of such

information.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation speciﬁcations and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suitable for use in medical, military, aircraft,

space or life support equipment, nor in applications where failure or

malfunction of a NXP Semiconductors product can reasonably be expected to

result in personal injury, death or severe property or environmental damage.

NXP Semiconductors accepts no liability for inclusion and/or use of NXP

Semiconductors products in such equipment or applications and therefore

such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

speciﬁed use without further testing or modiﬁcation.

Limiting values — Stress above one or more limiting values (as deﬁned in

the Absolute Maximum Ratings System of IEC 60134) may cause permanent

damage to the device. Limiting values are stress ratings only and operation of

the device at these or any other conditions above those given in the

Characteristics sections of this document is not implied. Exposure to limiting

values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold

subject to the general terms and conditions of commercial sale, as published

at http://www.nxp.com/proﬁle/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless

explicitly otherwise agreed to in writing by NXP Semiconductors. In case of

any inconsistency or conﬂict between information in this document and such

terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted

or construed as an offer to sell products that is open for acceptance or the

grant, conveyance or implication of any license under any copyrights, patents

or other industrial or intellectual property rights.

12.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks

are the property of their respective owners.

13. Contact information

For additional information, please visit: http://www.nxp.com

For sales ofﬁce addresses, send an email to: salesaddresses@nxp.com

Document status[1][2] Product status[3] Deﬁnition

Objective [short] data sheet Development This document contains data from the objective speciﬁcation for product development.

Preliminary [short] data sheet Qualiﬁcation This document contains data from the preliminary speciﬁcation.

Product [short] data sheet Production This document contains the product speciﬁcation.

NXP Semiconductors BLF3G21-30

UHF power LDMOS transistor

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 14 February 2007

Document identifier: BLF3G21-30_1

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

14. Contents

1 Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3

7 Application information. . . . . . . . . . . . . . . . . . . 3

7.1 Ruggedness in class-AB operation. . . . . . . . . . 4

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 6

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9

10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 10

11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10

12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11

12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11

12.2 Deﬁnitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11

12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11

13 Contact information. . . . . . . . . . . . . . . . . . . . . 11

14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12