Ordering number : ENN6970 2SK3495 N-Channel Silicon MOSFET 2SK3495 Ultrahigh-Speed Switching Applications Features * * * * Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 4V drive. Meets radial taping. unit : mm 2087A [2SK3495] 2.5 1.45 1.0 1.0 4.5 1.0 6.9 4.0 1.0 0.6 0.5 0.9 1 2 3 0.45 1 : Source 2 : Drain 3 : Gate Specifications 2.54 2.54 Absolute Maximum Ratings at Ta=25C Parameter SANYO : NMP Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 60 Gate-to-Source Voltage VGSS 20 V ID 1.2 A Drain Current (DC) Drain Current (Pulse) IDP PD Allowable Power Dissipation PW10s, duty cycle1% V 4.8 A 1 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Sourse Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance V(BR)DSS IDSS IGSS Conditions ID=1mA, VGS=0 VDS=60V, VGS=0 VGS(off) yfs VGS=16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=0.6A RDS(on)1 RDS(on)2 ID=0.6A, VGS=10V ID=0.6A, VGS=4V Ratings min typ max 60 Unit V 1.0 1.0 10 A 10 A 2.4 V 500 m 680 m 1.5 S 380 500 Continued on next page Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52501 TS IM TA-3256 No.6970-1/4 2SK3495 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Input Capacitance Ciss pF Coss VDS=20V, f=1MHz VDS=20V, f=1MHz 70 Output Capacitance 20 pF Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 5 pF Turn-ON Delay Time td(on) See specified Test Circuit 4 ns Rise Time tr td(off) See specified Test Circuit 3 ns See specified Test Circuit 17 ns Turn-OFF Delay Time Fall Time tf Qg Total Gate Charge 4 ns VDS=10V, VGS=10V, ID=1.2A See specified Test Circuit 3.6 nC 0.6 nC Gate-to-Source Charge Qgs Gate-to-Drain "Miller" Charge Qgd VDS=10V, VGS=10V, ID=1.2A VDS=10V, VGS=10V, ID=1.2A Diode Forward Voltage VSD IS=1.2A, VGS=0 0.5 nC 0.86 1.2 V Switching Time Test Circuit VDD=30V VIN ID=0.6A RL=50 10V 0V VOUT VIN D PW=10s D.C.1% G P.G 50 2SK3495 S ID -- VDS 1.4 ID -- VGS 2.5 8.0V 6.0V 5.0V VDS=10V Drain Current, ID -- A 0V 4. VGS=2.5V 3. 5 V 0.8 0.6 0.4 1.5 1.0 Ta= 75 C 25 C --25 C 0V 1.0 2.0 V 3.0 10. Drain Current, ID -- A 1.2 0.5 0.2 0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Drain-to-Source Voltage, VDS -- V 0 2.0 800 600 400 200 0 4 6 8 10 12 14 16 Gate-to-Source Voltage, VGS -- V 18 20 IT03236 Static Drain-to-Source On-State Resistance, RDS(on) -- m 1000 2 1.0 1.5 2.0 2.5 3.0 Gate-to-Source Voltage, VGS -- V 3.5 IT03235 RDS(on) -- Ta 1000 Ta=25C ID=0.6A 0 0.5 IT03234 RDS(on) -- VGS 1200 Static Drain-to-Source On-State Resistance, RDS(on) -- m 1.8 800 4V S= V 0.6 =10 I D= GS V , A 0.6 I D= 600 VG A, 400 200 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- C 120 140 160 IT03237 No.6970-2/4 2SK3495 yfs -- ID VDS=10V 3 VGS=0 2 2 C 5 3 0.1 C 2 C C 3 --25 = Ta 0.1 7 5 5 --2 C 2 5 25 3 7 Ta= 75 C Forward Current, IF -- A 1.0 1.0 7 5 7 5 3 2 2 2 0.01 0.001 2 3 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Drain Current, ID -- A 2 0.01 0.4 3 0.5 5 0.7 Ciss, Coss, Crss -- pF td(off) 10 7 tf td(on) tr 3 1.0 IT03239 f=1MHz 100 5 0.9 2 3 2 0.8 Ciss, Coss, Crss -- VDS 3 VDD=30V VGS=10V 7 0.6 Diode Forward Voltage, VSD -- V IT03238 SW Time -- ID 100 Switching Time, SW Time -- ns IF -- VSD 3 75 Forward Transfer Admittance, yfs -- S 5 Ciss 7 5 3 Coss 2 10 7 Crss 5 2 3 1.0 0.1 2 2 3 5 7 2 1.0 Drain Current, ID -- A Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 8 7 6 5 4 3 2 0 1.0 1.5 2.0 2.5 3.0 Total Gate Charge, Qg -- nC 3.5 4.0 IT03242 PD -- Ta 1.2 40 50 60 IT03241 IDP=4.8A 10 10 1m 10 ID=1.2A ms 10 1.0 7 5 s 0 s s 0m DC 3 2 s op era tio n 0.1 7 5 3 2 1 0.5 30 ASO 10 7 5 3 2 0 20 Drain-to-Source Voltage, VDS -- V VDS=10V ID=1.2A 9 10 IT03240 VGS -- Qg 10 Allowable Power Dissipation, PD -- W 0 3 Operation in this area is limited by RDS(on). Ta=25C Single pulse 0.01 0.1 2 3 5 7 1.0 2 3 5 7 10 2 Drain-to-Source Voltage, VDS -- V 3 5 7 100 IT03243 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 160 IT03244 No.6970-3/4 2SK3495 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 2001. Specifications and information herein are subject to change without notice. PS No.6970-4/4