ge PN4391 Philips Components PN4392 PN4393 blue binder, tab 4 N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Silicon symmetrical n-channel junction field-effect transistors in plastic TO-92 envelopes with the gate connected to the case. The transistors are intended for use in analog switches, commutators and choppers. QUICK REFERENCE DATA Drain-source voltage +Vps max. 40 Vv Total power dissipation up to Tamb = 25 OC Prot max. 360 mw PN4391 | PN4392 | PN4393 Drain current Vps = 20 V; Ves = OV loss > 50 25 5 mA Gate-source cut-off voltage VGS off > 4.0 2.0 0.5 Vv Ip = 1nA; Vps = 20 V VGS off < 10 5.0 3.0 Vv Drain-source ON-resistance Veg =0V;IDp=imA RDS on < 30 60 100 Q MECHANICAL DATA Dimensions in mm Fig.1 TO-92 Pinning: 1. Gate q t 2. Source s ee) t 0,40 . 4 min 3. Drain 5,2 max 12,7 min 4 0,49 t max max ; Ye - = 0,67 { 3 max i a diameter within 2,0 max 7270972. is uncontrotled ~ 3 Note: Drain and source are interchangeable. rl PH i LI PS February 1989 Co 1PN4391 N-channel silicon field-effect transistors PN4392 PN4393 DYNAMIC CHARACTERISTICS Tj = 25 C unless otherwise specified PN4393 Drain-source ON-resistance Vps = OV; Veg = OV; f= 1 kHz Rps on < 100 Q Input capacitance f = 1 MHz Vps = 20 V: Ves = OV; Tamb = 25 9C Ciss < 16 pF Feedback capacitance; f = 1 MHz Vps = 0V;-Vgg = 12 V Crss < - pF Vps=0V;-Ves= 7V Crs < - pF Vos =0V;-Ves= 5V Crsg < 5 pF Switching times (Tj = 25 9C unless otherwise specified) Vpop = 10V;Vgsg=0V PN4391 | PN4392 | PN4393 Test conditions Ip = 3.0 mA VGS off = 50 Vv RL = 3.2 kQ Rise time tr < 5 ns Turn-on time ton < 15 ns Fall time tf < 30 ns Turn-off time toff < 50 ns Ves=0 eer, = Mv 90% --+-\--..---- ~V6s off e tote e t ton ~ th pe A te 90% O | 7260928 Vo 9 | 510 10% ~ 7 Fig.2 Test circuit. Fig.3 Switching times waveforms. Pulse generator: Oscilloscope: t < 0.5 ns Ri = 502 th o< 0.5 ns tp = 100 ps 6 = 0.01 PH i Li PS February 1989 M89-1046A