HS1-1825ARH/PROTO - Intersil Corporation

Radiation Hardened High-Speed, Dual Output PWM

HS-1825ARH, HS-1825AEH

The Radiation Hardened HS-1825ARH, HS-1825AEH Pulse

Width Modulator is designed to be used in high frequency

switched-mode power supplies and can be used in either

current-mode or voltage-mode. It is well suited for single-ended

boost converter applications.

Device features include a precision voltage reference, low

power start-up circuit, high frequency oscillator, wide-band

error amplifier, and fast current-limit comparator. The use of

proprietary process capabilities and unique design techniques

results in fast propagation delay times and high output current

over a wide range of output voltages.

Constructed with the Intersil Rad Hard Silicon Gate (RSG)

Dielectric Isolation BiCMOS process, the HS-1825ARH,

HS-1825AEH has been specifically designed to provide highly

reliable performance when exposed to harsh radiation

environments.

Specifications for Rad Hard QML devices are controlled by the

Defense Logistics Agency Land and Maritime (DLA). The SMD

numbers listed below must be used when ordering.

Detailed Electrical Specifications for the HS-1825ARH,

HS-1825AEH are contained in SMD 5962-99558. That

document may be easily downloaded from our website.

www.intersil.com/

Features

• Electrically Screened to DLA SMD # 5962-99558

• QML Qualified per MIL-PRF-38535 Requirements

• Radiation Environment

- Maximum Total Dose. . . . . . . . . . . . . . . . . . . . 300 krad(SI)

- Vertical Architecture Provides Low Dose Rate Immunity

- DI RSG Process Provides Latch-Up Immunity

• Low Start-Up Current . . . . . . . . . . . . . . . . . . . . . . . 100µA (Typ)

• Fast Propagation Delay . . . . . . . . . . . . . . . . . . . . . . . 80ns (Typ)

• 12V to 30V Operation

• 1A (Peak) Dual Output Drive Capability

•5.1V Reference

•Undervoltage Lockout

•Programmable Soft-Start

• Switching Frequencies to 500kHz

• Latched Overcurrent Comparator with Full Cycle Restart

• Programmable Leading Edge Blanking Circuit

Applications

• Current or Voltage Mode Switching Power Supplies

• Motor Speed and Direction Control

Pin Configuration

HS-1825ARH, HS-1825AEH

SBDIP (CDIP2-T16) AND FLATPACK (CDFP4-F16)

TOP VIEW

INV

NON-INV

E/A OUT

CLOCK

SOFT START

RAMP

VREF 5.1V

OUTPUT B

POWER GND

OUTPUT A

GND

ILIM/SD

VCC

NOTE: Grounding the Soft-Start pin does not inhibit the outputs. The outputs may be inhibited by applying >1.26V to the ILIM/SD pin.

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.

All other trademarks mentioned are the property of their respective owners.

May 10, 2012

FN4561.9

HS-1825ARH, HS-1825AEH

2FN4561.9

May 10, 2012

Ordering Information

ORDERING NUMBER

INTERNAL

MKT. NUMBER

(Note) TEMP. RANGE (°C)

PACKAGE

(RoHS Compliant)

PKG.

DWG. #

5962F9955801V9A HS0-1825ARH-Q -50 to +125

5962F9955802V9A HS0-1825AEH-Q -50 to +125

HS0-1825ARH/Sample HS0-1825ARH/Sample -50 to +125

5962F9955801VEC HS1-1825ARH-Q -50 to +125 16 Ld SBDIP D16.3

5962F9955802VEC HS1-1825AEH-Q -50 to +125 16 Ld SBDIP D16.3

5962F9955801QEC HS1-1825ARH-8 -50 to +125 16 Ld SBDIP D16.3

5962F9955801VXC HS9-1825ARH-Q -50 to +125 16 Ld Flatpack K16.A

5962F9955802VXC HS9-1825AEH-Q -50 to +125 16 Ld Flatpack K16.A

5962F9955801QXC HS9-1825ARH-8 -50 to +125 16 Ld Flatpack K16.A

HS1-1825ARH/Proto HS1-1825ARH/Proto -50 to +125 16 Ld SBDIP D16.3

HS9-1825ARH/Proto HS9-1825ARH/Proto -50 to +125 16 Ld Flatpack K16.A

NOTE: These Intersil Pb-free Hermetic packaged products employ 100% Au plate - e4 termination finish, which is RoHS compliant and compatible with

both SnPb and Pb-free soldering operations.

Typical Performance Curves

FIGURE 1. OSCILLATOR FREQUENCY vs Rt AND CtFIGURE 2. MAXIMUM DUTY CYCLE vs Rt

110100

100

10k

Rt TIMING RESISTANCE (kΩ)

FREQUENCY (kHz)

C220pFC470pF

C1000pF

C2200pF C4700pF

C10nF

C22nF

1 10 100

100

DMAX (%)

Rt TIMING RESISTANCE (kΩ)

DMAX

HS-1825ARH, HS-1825AEH

Intersil products are manufactured, assembled and tested utilizing ISO9000 quality systems as noted

in the quality certifications found at www.intersil.com/design/quality

Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time

without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be

accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third

parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

For information regarding Intersil Corporation and its products, see www.intersil.com

FN4561.9

May 10, 2012

For additional products, see www.intersil.com/product_tree

Die Characteristics

DIE DIMENSIONS

4710µm x 3570µm (185 mils x 140 mils)

Thickness: 483µm ±25.4µm (19 mils ±1 mil)

INTERFACE MATERIALS

Glassivation

Type: PSG (Phosphorous Silicon Glass)

Thickness: 8.0kÅ ±1.0kÅ

Top Metallization

Type: ALSiCu

Thickness: 16.0kÅ ±2kÅ

Substrate

Radiation Hardened Silicon Gate,

Dielectric Isolation

Backside Finish

Silicon

ASSEMBLY RELATED INFORMATION

Substrate Potential

Unbiased (DI)

ADDITIONAL INFORMATION

Worst Case Current Density

<2.0 x 105 A/cm2

Transistor Count

225

Metallization Mask Layout HS-1825ARH,HS-1825AEH

NOTES:

1. This is the oscillator ground (OSCGND) bond pad and must be

connected to GND.

2. PGND and VC each require two bond pad connections.

PGND (12)

OUTA (11)

GND (10)

OSCGND

ILIM (9)

SS (8)

RAMP (7)

CT (6)

RT (5)

(1) IN-

(16) VREF

(15) VCC

(14) OUTB

(13) VC

(3) EAOUT

(4) CLK/LEB

(2) IN+

VC (13)

(12) PGND

(NOTE 2)

(NOTE 1)

(NOTE 2)