Power Transistors
Page <1> 12/12/11 V1.1
www.element14.com
www.farnell.com
www.newark.com
Features:
•Complementary Silicon Plastic Power Transistors
•Collector - emitter sustaining voltage - VCEO (sus) = 60 V (minimum)
•Collector - emitter saturation voltage - VCE (sat) = 1.5 V (maximum) at IC= 6 A
•Current gain - bandwidth product fT= 3 MHz (minimum) at IC = 500 mA
Applications:
Designed for use in general purpose power amplifier and switching applications.
TO - 220
Dimensions : Millimetres
Dimensions Minimum Maximum
A 14.68 15.31
B 9.78 10.42
C 5.01 6.52
D 13.06 14.62
E 3.57 4.07
F 2.42 3.66
G 1.12 1.36
H 0.72 0.96
I 4.22 4.98
J 1.14 1.38
K 2.2 2.97
L 0.33 0.55
M 2.48 2.98
O 3.7 3.9
Characteristics Symbol TIP41A
TIP42A Unit
Collector - emitter voltage VCEO 60 V
Collector - base voltage VCBO 60 V
Emitter - base voltage VEBO 5 V
Collector current - Continuous
- Peak IC6
10 A
Base current IB2 A
Total power dissipation at Tc= 25°C
derate above 25°C PD65
0.52
W
W/°C
Operating and storage Junction temperature range Tj, Tstg -65 to +150 °C
Maximum Ratings
Pin
1. Base
2. Collector
3. Emitter
4. Collector (Case)
Power Transistors
Page <2> 12/12/11 V1.1
www.element14.com
www.farnell.com
www.newark.com
Characteristic Symbol Maximum Unit
Thermal resistance junction to case Rθjc 1.92 °C/W
Thermal Characteristics
Characteristics Symbol Minimum Maximum Units
Off Characteristics
Collector - emitter sustaining voltage (1)
(IC= 30 mA, IB= 0) VCEO (SUS) 60 - V
Collector cut off current
(VCE = 100 V, IB= 0) ICEO - 0.7 mA
Collector cut off current
(VCE = 60 V, VBE = 0) ICES - 0.4 mA
Emitter cut off current
(VEB = 5 V, IC= 0) IEBO - 1 mA
On Characteristics (1)
DC current gain
(IC= 0.3 A; VCE = 4 V)
(IC= 0.3 A; VCE = 4 V)
hFE 30
15
75 -
Collector - emitter saturation voltage
(IC= 6 A; IB= 600 mA) VCE (sat) -1.5 V
Base-emitter on voltage
(IC= 6 A; VCE = 4 V) VBE (on) - 2 V
Dynamic characteristics
Current gain-bandwidth Product (2)
(IC= 500 mA; VCE = 10 V, fTEST = 1 MHz) fT3 - MHz
Small signal current gain
(IC= 500 mA; VCE = 10 V, f = 1 kHz) hfe 20 - -
Electrical Characteristics (Tc= 25°C Unless Otherwise noted)
Power Derating
TC, Temperature (°C)
PD, Power Dissipation (watts)
(1) Pulse test: Pulse width ≤300 µs, duty cycle ≤ 2%
(2) fT= hfe •fTEST
Power Transistors
Page <3> 12/12/11 V1.1
www.element14.com
www.farnell.com
www.newark.com
tr, tf ≤10 ns
Duty cycle = 1 %
RBand RCvaried to obtain desired current levels
D1must be fast recovery type eg:
M8D5000 Used Above IBto 100 mA
MSD6100 Used Below IBto 100 mA
There are two limitation on the power ability of a transistor:
average junction temperature and second breakdown safe
operating area curves indicate IC-VCE limits of the transistor
that must be observed for reliable operation i.e., the transistor
must not be subjected to greater dissipation than curves
indicate. The data of curve is base on TJ (PK) = 150°C; TCis
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ (PK) ≤150°C,
at high case temperatures, thermal limitation will reduce the
power that can be handled to less than the limitations imposed
by second breakdown.
Switching Time Test Circuit Turn-on Time
IC, Collector Current (Amperes)
t, Time (µs)
hFE, DC Current Gain
DC Current Gain
IC, Collector Current (Amperes)
Turn-off Time
t, Time (µs)
IC, Collector Current (Amperes)
Active Region Safe Operating Area
IC, Collector Current (Amperes)
VCE, Collector Emitter Voltage (Volts)
Power Transistors
Page <4> 12/12/11 V1.1
www.element14.com
www.farnell.com
www.newark.com
Important Notice : This data sheet and its contents (the "Information") belong to the members of the Premier Farnell group of companies (the "Group") or are licensed to it. No licence is granted for the use of
it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces
all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use
made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted.
Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising)
is excluded. This will not operate to limit or restrict the Group's liability for death or personal injury resulting from its negligence. Multicomp is the registered trademark of the Group. © Premier Farnell plc 2011.
Description Part Number
Transistor, NPN, TO-220 TIP41A
Transistor, PNP, TO-220 TIP42A
Part Number Table
Collector Saturation Region
IB, Base Current (mA)
VCE, Collector Voltage (Volts)
Capacitances
VR, Reverse Voltage (Volts)
C, Capacitance (pF)
“ON” Voltage
IC, Collector Current (Amperes)
Voltage (Volts)
Collector Cut off Region
VBE, Base-emitter Voltage (Volts)
IC, Collector Current (µA)
