AN48830B Low current consumption, high sensitivity CMOS Hall IC Operate by the value of magnetic flux density, regardless of polarity 0.225 0.22+0.10 -0.05 4 M Di ain sc te on na tin nc ue e/ d 0.225 2 3 0.65 0.65 1.300.10 2.000.10 0.800.10 0.320.10 0 to 0.10 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. Features 1 0.11+0.10 -0.05 The AN48830B is a Hall IC (a magnetic sensor) which has 2 times or more sensitivity and a low current consumption of about one threehundredth compared with our conventional one. In this Hall IC, a Hall element, a offset cancel circuit, an amplifier circuit, a sample and hold circuit, a Schmidt circuit, and output stage FET are integrated on a single chip housed in a small package by IC technique. 5 Unit : mm 1.650.10 2.100.10 Overview 0.13 M 0.10 1 2 Seating plane 3 Either North nor South magnetic pole can be selected * High sensitivity (6 mT max.) due to offset cancel circuit and a new sample and hold circuit Small current by using intermittent action 5 4 SMINI-5DA (Lead-free package) (Average supply current: 3.5 A typ.) Small package (SMD) CMOS inverter output (output form logic) S Note) *: Magnetic flux density N Applications isc VCC CLK Ma int en an ce /D 4 L Conventional model H output L ue on tin Block Diagram H AN48830B output Flip type cellular phone, digital video camera N.C. N.C. 3 1 On/Off control On/Of 5 Out Amplif Amplifier Hall element GND Switch Sample and hold 2 Pin Descriptions Pin No. Symbol Description Pin No. Symbol 1 N.C. 4 VCC Power supply 2 GND 5 Out Output 3 N.C. Publication date: October 2006 Ground Description SPC00017AEB 1 AN48830B Absolute Maximum Ratings Parameter Symbol Rating Unit Supply voltage VCC 5 V Output voltage VOUT 5 V Supply current ICC 5 mA Output current 15 mA PD 60 mW Operating ambient temperature *1 Topr -25 to +75 C Storage temperature *1 Tstg -55 to +125 C M Di ain sc te on na tin nc ue e/ d IOUT Power dissipation *1, *2 *1: Except for the power dissipation, operating ambient temperature and storage temperature, all ratings are for Ta = 25C. 2: T * a = 75C. For the independent IC without a heat sink. Please use within the range of power dissipation, refering to PD Ta curve. Recommended Operating Range Parameter Symbol Supply voltage VCC di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. Note) Range Unit 2.5 to 3.5 V Electrical Characteristics Ta = 25C 2C Parameter Symbol Conditions Min Typ Max Unit BH-LS VCC = 3 V 6 mT Operating magnetic flux density 2 *1 BH-LN VCC = 3 V -6 mT Operating magnetic flux density 3 *2 BL-HS VCC = 3 V 0.5 mT Operating magnetic flux density 4 *2 BL-HN VCC = 3 V - 0.5 mT Output voltage 1 VOLS VCC = 3 V, IO = 2 mA, B = 6.0 mT 0.1 0.3 V Output voltage 2 VOLN VCC = 3 V, IO = 2 mA, B = -6.0 mT 0.1 0.3 V Output voltage 3 VOHS VCC = 3 V, IO = -2 mA, B = 0.5 mT 2.7 2.9 V Output voltage 4 VOHN VCC = 3 V, IO = -2 mA, B = - 0.5 mT 2.7 2.9 V Supply current 1 *3 ICCAVE 3.5 7.0 A Min Typ Max Unit ue Operating magnetic flux density 1 on tin VCC = 3 V Conditions VCC = 3 V 1.2 mT Hysteresis width 2 BWN VCC = 3 V 1.2 mT Supply current 2 ICCON VCC = 3 V 1.4 mA Supply current 3 ICCOFF VCC = 3 V 2 A Operating time tON VCC = 3 V 20 s Stop time tOFF VCC = 3 V 20.5 ms Note) 2 Symbol BWS Ma Hysteresis width 1 int Parameter en an Design reference data ce /D isc Note) *1: Symbol BH-LS , BH-LN stands for the operating magnetic flux density where its output level varies from high to low. *2:Symbol BL-HS , BL-HN stands for the operating magnetic flux density where its output level varies from low to high. *3:ICCAVE = {ICCON x tON + ICCOFF x tOFF}/{tON + tOFF} It will operate normally in approximately 41 ms after power on. SPC00017AEB AN48830B Technical Data Position of a Hall element (unit in mm) Distance from a package surface to sensor part: 0.39 mm (reference value) A Hall element is placed on the shaded part in the figure. 1.0 M Di ain sc te on na tin nc ue e/ d 0.31 1.0 S di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. Magneto-electro conversion characteristics Output voltage BL-HN BL-HS BWN BWS BH-LN N BH-LS Applied magnetic flux density B Direction of applied magnetic ffield Operating magnetic flux density Power dissipation of package MINI-5DA PD Ta on tin 175 ue 200 Power dissipation PD (mW) Ma int en an ce /D isc 150 Independent IC without a heat sink Rth(j-a) = 833.3C/W C/W PD = 120 mW (25 (25C) 125 100 75 50 25 0 0 25 50 75 100 125 150 Ambient temperature Ta (C) SPC00017AEB 3 AN48830B Technical Data (continued) Main characterisitcs Operating magnetic flux density Supply voltageOperating magnetic flux density Ambient temperature 8.0 6.0 Operating magnetic flux density B (mT) Sample 1 BH-LS 4.0 Operating magnetic flux density B (mT) Sample 2 BH-LS Sample 2 BL-HS Sample 1 BL-HS 2.0 0 Sample 2 BH-LS Sample 1 BH-LS 4.0 Sample 2 BL-HS Sample 1 BL-HS 2.0 M Di ain sc te on na tin nc ue e/ d Sample 1 BH-LN 6.0 -2.0 Sample 2 BH-LN Sample 1 BL-HN Ta = 25C -6.0 1 Sample 1 BL-HN -2.0 -4.0 Sample 2 BH-LN VCC = 3 V 2 3 4 5 -6.0 -50 6 -25 0 25 50 75 100 125 Ambient temperature Ta (C) Supply voltage VCC (V) Hysteresis width Supply voltage Supply current Supply voltage 2.00 10 Ta = 25C 1.80 Output = High Supply current ICC (A) 8 Sample 1 BWN Hesteresis width BW (mT) Sample 2 BL-HN Sample 1 BH-LN di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. Sample 2 BL-H L-HN N -4.0 0 Sample 2 BWN 1.60 Sample 2 BWS 1.40 Sample 1 BWS 1.20 6 4 -50C 25C 2 125C 1 2 3 4 5 isc 0.80 on tin ue 1.00 4 5 6 en 70 IO = -2 mA hgh-level output voltage VOH (V) 125C 0.025 25C 0.02 3 IO = 2 mA int Ma Low-level output voltage VOL (V) 0.03 2 high-level output voltage Supply voltage an Low-level output voltage Supply voltage 0.035 1 Supply voltage VCC (V) ce /D Supply voltage VCC (V) 0 6 -50C 0.015 0.01 60 125C 50 25C -50C 40 30 0.005 0.00 1 2 3 4 5 20 6 2 3 4 Supply voltage VCC (V) Supply voltage VCC (V) 4 1 SPC00017AEB 5 6 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. 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