PD - 97542 AUIRF3205Z AUIRF3205ZS AUTOMOTIVE GRADE Features Advanced Process Technology Ultra Low On-Resistance 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * HEXFET(R) Power MOSFET V(BR)DSS D G S 55V RDS(on) max. 6.5m ID (Silicon Limited) 110A ID (Package Limited) 75A Description Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. D D G D S G Absolute Maximum Ratings S D2Pak AUIRF3205ZS TO-220AB AUIRF3205Z G Gate D D Drain S Source Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Parameter Max. ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Silicon Limited) 110 ID @ TC = 100C Continuous Drain Current, VGS @ 10V 78 ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Package Limited) 75 IDM Pulsed Drain Current 440 c Units A PD @TC = 25C Power Dissipation 170 W VGS Linear Derating Factor Gate-to-Source Voltage 1.1 20 W/C V 180 mJ EAS d EAS (tested ) Single Pulse Avalanche Energy (Thermally Limited) Single Pulse Avalanche Energy Tested Value IAR Avalanche Current EAR Repetitive Avalanche Energy TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case ) Mounting Torque, 6-32 or M3 screw h c i Parameter Junction-to-Case RCS Case-to-Sink, Flat Greased Surface RJA Junction-to-Ambient HEXFET(R) i A mJ -55 to + 175 RJC RJA See Fig.12a, 12b, 15, 16 g Thermal Resistance k 250 i Junction-to-Ambient (PCB Mount) j C 300 10 lbf in (1.1N m) y y Typ. Max. Units C/W --- 0.90 0.50 --- --- 62 --- 40 is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com 1 07/23/2010 AUIRF3205Z/ZS Static Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units 55 --- --- 2.0 71 --- --- --- --- --- 0.051 4.9 --- --- --- --- --- --- --- --- 6.5 4.0 --- 20 250 200 -200 V V/C m V S A nA Conditions VGS = 0V, ID = 250A Reference to 25C, ID = 1mA VGS = 10V, ID = 66A VDS = VGS, ID = 250A VDS = 25V, ID = 66A VDS = 55V, VGS = 0V VDS = 55V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V e Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Qg Qgs Qgd td(on) tr td(off) tf LD Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance --- --- --- --- --- --- --- --- 76 21 30 18 95 45 67 4.5 110 --- --- --- --- --- --- --- LS Internal Source Inductance --- 7.5 --- 6mm (0.25in.) from package Ciss Coss Crss Coss Coss Coss eff. Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance --- --- --- --- --- --- 3450 550 310 1940 430 640 --- --- --- --- --- --- and center of die contact VGS = 0V VDS = 25V = 1.0MHz VGS = 0V, VDS = 1.0V, = 1.0MHz VGS = 0V, VDS = 44V, = 1.0MHz VGS = 0V, VDS = 0V to 44V nC ns nH pF ID = 66A VDS = 44V VGS = 10V VDD = 28V ID = 66A RG = 6.8 VGS = 10V Between lead, e e f Diode Characteristics Min. Typ. Max. IS Continuous Source Current Parameter --- --- 75 ISM (Body Diode) Pulsed Source Current --- --- 440 VSD trr Qrr ton (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time --- --- --- --- 28 25 1.3 42 38 c Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). Limited by TJmax, starting TJ = 25C, L = 0.08mH RG = 25, IAS = 66A, VGS =10V. Part not recommended for use above this value. Pulse width 1.0ms; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . 2 Units Conditions MOSFET symbol A V ns nC showing the integral reverse p-n junction diode. TJ = 25C, IS = 66A, VGS = 0V TJ = 25C, IF = 66A, VDD = 25V di/dt = 100A/s e e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. This value determined from sample failure population, starting TJ = 25C, L = 0.08mH RG = 25, IAS = 66A, VGS =10V. This is only applied to TO-220AB pakcage. This is applied to D2Pak, when mounted on 1" square PCB (FR4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. R is measured at TJ approximately 90C. www.irf.com AUIRF3205Z/ZS Qualification Information Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. IR's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. Qualification Level Moisture Sensitivity Level TO-220AB N/A TO-262 N/A 2 D Pak Machine Model MSL1 Class M4 (425V) AEC-Q101-002 ESD Human Body Model Class H1C (2000V) AEC-Q101-001 Charged Device Model Class C5 (1125V) AEC-Q101-005 RoHS Compliant Yes Qualification standards can be found at International Rectifiers web site: http//www.irf.com/ Exceptions to AEC-Q101 requirements are noted in the qualification report. www.irf.com 3 AUIRF3205Z/ZS 1000 1000 VGS TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 100 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V V GS TOP 10 4.5V 1 0.1 10 100 4.5V 20s PULSE WIDTH Tj = 25C 1 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 10 100 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 120 T J = 25C Gfs, Forward Transconductance (S) ID, Drain-to-Source Current ( A) VDS, Drain-to-Source Voltage (V) 20s PULSE WIDTH Tj = 175C T J = 175C 100 10 VDS = 25V 20s PULSE WIDTH 1 4.0 5.0 6.0 7.0 8.0 9.0 10.0 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 4 T J = 175C 100 80 T J = 25C 60 40 20 VDS = 10V 20s PULSE WIDTH 0 11.0 0 20 40 60 80 100 ID, Drain-to-Source Current (A) Fig 4. Typical Forward Transconductance Vs. Drain Current www.irf.com AUIRF3205Z/ZS 6000 20 5000 VGS, Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C, Capacitance (pF) C oss = C ds + C gd 4000 Ciss 3000 2000 1000 Coss VDS= 44V VDS= 28V VDS= 11V 16 12 8 4 Crss 0 0 1 ID= 66A 10 0 100 60 80 100 120 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 10000 ID, Drain-to-Source Current (A) 1000.0 OPERATION IN THIS AREA LIMITED BY R DS(on) 1000 TJ = 175C 100.0 40 QG Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) ISD, Reverse Drain Current (A) 20 100 10.0 T J = 25C 1.0 VGS = 0V 0.1 0.2 0.6 1.0 1.4 1.8 VSD, Source-toDrain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com 100sec 10 1msec 1 Tc = 25C Tj = 175C Single Pulse 0.1 2.2 1 10msec 10 100 1000 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area 5 AUIRF3205Z/ZS 120 2.5 RDS(on) , Drain-to-Source On Resistance (Normalized) LIMITED BY PACKAGE 80 60 40 20 0 25 50 75 100 125 150 2.0 1.5 1.0 0.5 175 -60 -40 -20 T C , Case Temperature (C) 0 20 40 60 80 100 120 140 160 180 T J , Junction Temperature (C) Fig 10. Normalized On-Resistance Vs. Temperature Fig 9. Maximum Drain Current Vs. Case Temperature 1 D = 0.50 Thermal Response ( Z thJC ) ID , Drain Current (A) 100 ID = 66A VGS = 10V 0.20 0.10 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com AUIRF3205Z/ZS 15V + V - DD IAS tp EAS, Single Pulse Avalanche Energy (mJ) D.U.T RG VGS 20V DRIVER L VDS 350 A 0.01 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp ID TOP 300 BOTTOM 27A 47A 66A 250 200 150 100 50 0 25 50 75 100 125 150 175 Starting T J, Junction Temperature (C) I AS Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms QG 10 V QGS QGD 4.0 VGS(th) Gate threshold Voltage (V) VG Charge Fig 13a. Basic Gate Charge Waveform L DUT 0 1K Fig 13b. Gate Charge Test Circuit www.irf.com VCC ID = 250A 3.0 2.0 1.0 -75 -50 -25 0 25 50 75 100 125 150 175 T J , Temperature ( C ) Fig 14. Threshold Voltage Vs. Temperature 7 AUIRF3205Z/ZS Avalanche Current (A) 1000 Duty Cycle = Single Pulse 100 Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax 0.01 0.05 10 0.10 1 0.1 1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current Vs.Pulsewidth EAR , Avalanche Energy (mJ) 200 TOP Single Pulse BOTTOM 10% Duty Cycle ID = 66A 160 120 80 40 0 25 50 75 100 125 150 Starting T J , Junction Temperature (C) Fig 16. Maximum Avalanche Energy Vs. Temperature 8 175 Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav *f ZthJC(D, tav) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav www.irf.com AUIRF3205Z/ZS D.U.T Driver Gate Drive + - * D.U.T. ISD Waveform Reverse Recovery Current + RG * dv/dt controlled by RG * Driver same type as D.U.T. * I SD controlled by Duty Factor "D" * D.U.T. - Device Under Test P.W. Period VGS=10V Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - D= Period P.W. + V DD + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage - Body Diode VDD Forward Drop Inductor Curent Ripple 5% * ISD VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs V DS VGS RG RD D.U.T. + -V DD 10V Pulse Width 1 s Duty Factor 0.1 % Fig 18a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr t d(off) tf Fig 18b. Switching Time Waveforms www.irf.com 9 AUIRF3205Z/ZS TO-220AB Package Outline Dimensions are shown in millimeters (inches) TO-220AB Part Marking Information Part Number AUIRF3205Z YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive, LeadFree XX Lot Code TO-220AB packages are not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com AUIRF3205Z/ZS D2Pak (TO-263AB) Package Outline Dimensions are shown in millimeters (inches) D2Pak (TO-263AB) Part Marking Information Part Number AUIRF3205ZS YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive, LeadFree XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 11 AUIRF3205Z/ZS D2Pak Tape & Reel Information TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 24.30 (.957) 23.90 (.941) 15.42 (.609) 15.22 (.601) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 60.00 (2.362) MIN. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 12 www.irf.com AUIRF3205Z/ZS Ordering Information Base part AUIRF3205Z AUIRF3205ZS www.irf.com Package Type TO-220 D2Pak Standard Pack Form Tube Tube Tape and Reel Left Tape and Reel Right Complete Part Number Quantity 50 50 800 800 AUIRF3205Z AUIRF3205ZS AUIRF3205ZSTRL AUIRF3205ZSTRR 13 AUIRF3205Z/ZS IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. 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