FDMA410NZ - Fairchild Semiconductor Corporation

FDMA410NZ Rev.B2

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FDMA410NZ Single N-Channel 1.5 V Specified PowerTrench® MOSFET

April 2009

FDMA410NZ

Single N-Channel 1.5 V Specified PowerTrench® MOSFET

20 V, 9.5 A, 23 m:

Features

Max rDS(on) = 23 m: at VGS = 4.5 V, ID = 9.5 A

Max rDS(on) = 29 m: at VGS = 2.5 V, ID = 8.0 A

Max rDS(on) = 36 m: at VGS = 1.8 V, ID = 4.0 A

Max rDS(on) = 50 m: at VGS = 1.5 V, ID = 2.0 A

HBM ESD protection level > 2.5 kV (Note 3)

Low Profile-0.8 mm maximum in the new package MicroFET

2x2 mm

RoHS Compliant

General Description

This Single N-Channel MOSFET has been designed using

Fairchild Semiconductor’s advanced Power Trench process to

optimize the rDS(ON) @ VGS = 1.5 V on special MicroFET

leadframe.

Applications

Li-lon Battery Pack

Baseband Switch

Load Switch

DC-DC Conversion

MOSFET Maximum Ratings TA= 25 °C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings Units

VDS Drain to Source Voltage 20 V

VGS Gate to Source Voltage ±8 V

-Continuous TA= 25 °C (Note 1a) 9.5 A

-Pulsed 24

Power Dissipation TA = 25 °C (Note 1a) 2.4 W

Power Dissipation TA = 25 °C (Note 1b) 0.9

TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C

RTJA Thermal Resistance, Junction to Ambient (Note 1a) 52 °C/W

RTJA Thermal Resistance, Junction to Ambient (Note 1b) 145

Device Marking Device Package Reel Size Tape Width Quantity

410 FDMA410NZ MicroFET 2X2 7 ’’ 12 mm 3000 units

Pin 1

Drain Source

MicroFET 2X2 (Bottom View)

Bottom Drain Contact

 Free from halogenated compounds and antimony oxides

FDMA410NZ Single N-Channel 1.5 V Specified PowerTrench® MOSFET

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FDMA410NZ Rev.B2

Electrical Characteristics TJ = 25 °C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BVDSS Drain to Source Breakdown Voltage ID = 250 PA, VGS = 0 V 20 V

'BVDSS

'TJ

Breakdown Voltage Temperature

Coefficient ID = 250 PA, referenced to 25 °C 17 mV/°C

IDSS Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1 PA

IGSS Gate to Source Leakage Current VGS = ±8 V, VDS = 0 V ±10 PA

On Characteristics

VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 PA 0.4 0.7 1.0 V

'VGS(th)

'TJ

Gate to Source Threshold Voltage

Temperature Coefficient ID = 250 PA, referenced to 25 °C –3 mV/°C

rDS(on) Static Drain to Source On Resistance

VGS = 4.5 V, ID = 9.5 A 17 23

VGS = 2.5 V, ID = 8.0 A 20 29

VGS = 1.8 V, ID = 4.0 A 24 36

VGS = 1.5 V, ID = 2.0 A 29 50

VGS = 4.5 V, ID = 9.5 A,

TJ = 125 °C 23 32

gFS Forward Transconductance VDD = 5 V, ID = 9.5 A 35 S

Dynamic Characteristics

Ciss Input Capacitance VDS = 10 V, VGS = 0 V,

f = 1 MHz

815 1080 pF

Coss Output Capacitance 130 175 pF

Crss Reverse Transfer Capacitance 85 130 pF

RgGate Resistance f = 1 MHz 2.1 :

Switching Characteristics

td(on) Turn-On Delay Time

VDD = 10 V, ID = 9.5 A,

VGS = 4.5 V, RGEN = 6 :

7.5 15 ns

trRise Time 3.9 10 ns

td(off) Turn-Off Delay Time 27 44 ns

tfFall Time 3.7 10 ns

QgTotal Gate Charge VGS = 4.5 V , VDD = 10 V,

ID = 9.5 A

10 14 nC

Qgs Gate to Source Charge 1.2 nC

Qgd Gate to Drain “Miller” Charge 2.0 nC

Drain-Source Diode Characteristics

ISMaximum Continuous Drain-Source Diode Forward Current 2.0 A

VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS= 2.0 A (Note 2) 0.7 1.2 V

trr Reverse Recovery Time IF = 9.5 A, di/dt = 100 A/Ps12 22 ns

Qrr Reverse Recovery Charge 2.6 10 nC

NOTES:

1. RTJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTJA is determined by

the user's board design.

2. Pulse Test: Pulse Width < 300Ps, Duty cycle < 2.0%.

3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.

a.52 °C/W when mounted

on a 1 in2pad of 2 oz copper.

b. 145 °C/W when mounted on a

minimum pad of 2 oz copper.

FDMA410NZ Single N-Channel 1.5 V Specified PowerTrench® MOSFET

www.fairchildsemi.com

FDMA410NZ Rev.B2

Typical Characteristics TJ = 25 °C unless otherwise noted

Figure 1.

0.0 0.5 1.0 1.5 2.0

VGS = 3.5 V

VGS = 4.5 V

VGS = 1.8 V

PULSE DURATION = 80Ps

DUTY CYCLE = 0.5%MAX

VGS = 1.5 V

VGS = 1.2 V

VGS = 2.5 V

ID,DRAIN CURRENT (A)

VDS,DRAIN TO SOURCE VOLTAGE (V)

On-Region Characteristics Figure 2.

0 4 8 12162024

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

VGS =4.5 VVGS =3.5 V

PULSE DURATION = 80Ps

DUTY CYCLE = 0.5%MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

ID,DRAIN CURRENT (A)

VGS =1.8 V

VGS = 1.5 V

VGS = 1.2 V

VGS =2.5 V

N o r m a l i z e d O n - R e s i s t a n c e

vs Drain Current and Gate Voltage

F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e

-75 -50 -25 0 25 50 75 100 125 150

0.6

0.8

1.0

1.2

1.4

1.6

ID = 9.5 A

VGS = 4.5 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

TJ,JUNCTION TEMPERATURE (oC)

vs Junction Temperature

Figure 4.

1.01.52.02.53.03.54.04.5

ID= 4.75 A

TJ= 125 oC

TJ= 25 oC

VGS,GATE TO SOURCE VOLTAGE (V)

rDS(on),DRAIN TO

SOURCE ON-RESISTANCE (m:)

PULSE DURATION = 80 Ps

DUTY CYCLE = 0.5%MAX

O n -R es i s t an ce v s G a t e to

Source Voltage

Figure 5. Transfer Characteristics

0.0 0.5 1.0 1.5 2.0

VDS = 5 V

PULSE DURATION = 80 Ps

DUTY CYCLE = 0.5%MAX

TJ = -55 oC

TJ = 25 oC

TJ= 125 oC

ID, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 6.

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

TJ = -55 oC

TJ = 25 oC

TJ= 125 oC

VGS = 0 V

IS, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

S ou r ce to D ra i n D io d e

Forward Voltage vs Source Current

FDMA410NZ Single N-Channel 1.5 V Specified PowerTrench® MOSFET

www.fairchildsemi.com

FDMA410NZ Rev.B2

Figure 7.

024681012

ID= 9.5 A

VDD = 12 V

VDD = 8 V

VGS, GATE TO SOURCE VOLTAGE (V)

Qg, GATE CHARGE (nC)

VDD = 10 V

Gate Charge Characteristics Figure 8.

0.1 1 10 20

100

1000

2000

f = 1 MHz

VGS = 0 V

CAPACITANCE (pF)

VDS, DRAIN TO SOURCE VOLTAGE (V)

Crss

Coss

Ciss

C a p a c i t a n c e v s D r a i n

to Source Voltage

Figure 9.

03691215

10-8

10-7

10-6

10-5

10-4

10-3

10-2

VGS = 0 V

TJ= 25 oC

TJ= 125 oC

VGS,GATE TO SOURCE VOLTAGE (V)

Ig,GATE LEAKAGE CURRENT (A)

Gate Leakage Current vs Gate to

Source Voltage

Figure 10.

0.1 1 10 50

0.01

0.1

0.1 ms

10 s

1 s

100 ms

10 ms

1 ms

-ID, DRAIN CURRENT (A)

-VDS, DRAIN to SOURCE VOLTAGE (V)

THIS AREA IS

LIMITED BY rDS(on)

SINGLE PULSE

TJ= MAX RATED

RTJA = 145 oC/W

TA= 25 oC

Forward Bias S afe

Operation Area

Figure 11. Single Pulse Maximum Power Dissipation

10-3 10-2 10-1 100101100 1000

SINGLE PULSE

RTJA = 145 oC/W

TA= 25 oC

0.5

VGS = 4.5 V

P(PK),PEAK TRANSIENT POWER (W)

t, PULSE WIDTH (sec)

Typical Characteristics TJ = 25 °C unless otherwise noted

FDMA410NZ Single N-Channel 1.5 V Specified PowerTrench® MOSFET

www.fairchildsemi.com

FDMA410NZ Rev.B2

Figure 12. Junction-to-Ambient Transient Thermal Response Curve

10-3 10-2 10-1 100101100 1000

0.01

0.1

SINGLE PULSE

RTJA = 145 oC/W

DUTY CYCLE-DESCENDING ORDER

NORMALIZED THERMAL

IMPEDANCE, ZTJA

t, RECTANGULAR PULSE DURATION (sec)

D = 0.5

0.2

0.1

0.05

0.02

0.01

PDM

NOTES:

DUTY FACTOR: D = t1/t2

PEAK TJ = PDM x ZTJA x RTJA + TA

Typical Characteristics TJ = 25 °C unless otherwise noted

FDMA410NZ Single N-Channel 1.5 V Specified PowerTrench® MOSFET

www.fairchildsemi.com

FDMA410NZ Rev.B2

Dimensional Outline and Pad Layout

B. DIMENSIONS ARE IN MILLIMETERS.

C. DI MENSIONS AND TOLERANCES PER

A. DOES NOT FULLY CONFORM TO JEDEC REGISTRATI ON

ASME Y14.5M, 1994

0.10 CAB

0.05 C

RECOMMENDED LAND PATTERN OPT 1

0.10 C

0.08 C

2.000

0.05

0.00

0.10 C

0.8 MAX

SEATING

PLANE

0.10 C

(0.20)

0.33

0.20

PIN #1 IDENT

0.65

1.30

1.35

(0.47)

1.05

0.40 TYP

0.65 TYP

0.25~0.35

1.000

0.800

2.30

1.00

MO-229 DATED AUG/2003

(0.56)

(0.30)

0.66

RECOMMENDED LAND PATTERN OPT 2

1.35

(0.47)

1.05

0.40 TYP

0.65 TYP

2.30

1.00

0.66

NO DRAIN OR GATE

TRACES ALLOWED IN

THIS AREA

PIN#1 LOCATION

1.05

0.95

D. DRAWING FILENAME: MKT-MLP06Lrev2.

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FDMA410NZ Single N-Channel 1.5 V Specified PowerTrench® MOSFET

FDMA410NZ Rev.B2

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Rev. I40