BZX85C Series
Excel Semiconductor
www.excel-semi.com Rev. 3f, 1-Jun-2008
FaxBack +86-512-66607370 1/4
Zener diode
Features
1. High reliability
2. Low reverse current
3. Very sharp reverse characteristic
Applications
Voltage stabilization
Absolute Maximum Ratings
Tj=25℃
Parameter Test Conditions Type Symbol Value Unit
Power dissipation I=4mm TL≤25℃ P
V 1.3 W
Junction temperature Tj 175 ℃
Storage temperature range Tstg -65~+175 ℃
Maximum Thermal Resistance
Tj=25℃
Parameter Test Conditions Symbol Value Unit
Junction ambient I=4mm ,TL=constant RthJA 110 K/W
Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional operation above the
recommended operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions may
affect device reliability.
Electrical Characteristics
Tj=25℃
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=200mA VF 1 V
BZX85C Series
Excel Semiconductor
www.excel-semi.com Rev. 3f, 1-Jun-2008
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Type VZnom IZT for V
ZT and rzjT rzjK at I
ZK IR at V
R TKVZ
BZX85C V mA V Ω Ω mA µA V %/K
2V7 2.7 80 2.5~2.9 <20 <400 1 <150 1 -0.09~-0.06
3V0 3.0 80 2.8~3.2 <20 <400 1 <100 1 -0.08~-0.05
3V3 3.3 80 3.1~3.5 <20 <400 1 <40 1 -0.08~-0.05
3V6 3.6 60 3.4~3.8 <20 <500 1 <20 1 -0.08~-0.05
3V9 3.9 60 3.7~4.1 <15 <500 1 <10 1 -0.08~-0.05
4V3 4.3 50 4.0~4.6 <13 <500 1 <3 1 -0.06~-0.03
4V7 4.7 45 4.4~5.0 <13 <500 1 <3 1 -0.05~+0.02
5V1 5.1 45 4.8~5.4 <10 <500 1 <1 1 -0.02~+0.02
5V6 5.6 45 5.2~6.0 <7 <400 1 <1 1 -0.05~+0.05
6V2 6.2 35 5.8~6.6 <4 <300 1 <1 2 0.03~0.06
6V8 6.8 35 6.4~7.2 <3.5 <300 1 <1 3 0.03~0.07
7V5 7.5 35 7.0~7.9 <3 <200 0.5 <1 5 0.03~0.07
8V2 8.2 25 7.7~8.7 <5 <200 0.5 <1 6.2 0.03~0.08
9V1 9.1 25 8.5~9.6 <5 <200 0.5 <1 6.8 0.03~0.09
10 10 25 9.4~10.6 <7 <200 0.5 <0.5 7.5 0.03~0.1
11 11 20 10.4~11.6 <8 <300 0.5 <0.5 8.2 0.03~0.11
12 12 20 11.4~12.7 <9 <350 0.5 <0.5 9.1 0.03~0.11
13 13 20 12.4~14.1 <10 <400 0.5 <0.5 10 0.03~0.11
15 15 15 13.8~15.6 <15 <500 0.5 <0.5 11 0.03~0.11
16 16 15 15.3~17.1 <15 <500 0.5 <0.5 12 0.03~0.11
18 18 15 16.8~19.1 <20 <500 0.5 <0.5 13 0.03~0.11
20 20 10 18.8~21.2 <24 <600 0.5 <0.5 15 0.03~0.11
22 22 10 20.8~23.3 <25 <600 0.5 <0.5 16 0.04~0.12
24 24 10 22.8~25.6 <25 <600 0.5 <0.5 18 0.04~0.12
27 27 8 25.1~28.9 <30 <750 0.25 <0.5 20 0.04~0.12
30 30 8 28~32 <30 <1000 0.25 <0.5 22 0.04~0.12
33 33 8 31~35 <35 <1000 0.25 <0.5 24 0.04~0.12
36 36 8 34~38 <40 <1000 0.25 <0.5 27 0.04~0.12
39 39 6 37~41 <50 <1000 0.25 <0.5 30 0.04~0.12
43 43 6 40~46 <50 <1000 0.25 <0.5 33 0.04~0.12
47 47 4 44~50 <90 <1500 0.25 <0.5 36 0.04~0.12
51 51 4 48~54 <115 <1500 0.25 <0.5 39 0.04~0.12
56 56 4 52~60 <120 <2000 0.25 <0.5 43 0.04~0.12
62 62 4 58~66 <125 <2000 0.25 <0.5 47 0.04~0.12
68 68 4 64~72 <130 <2000 0.25 <0.5 51 0.04~0.12
75 75 4 70~79 <135 <2000 0.25 <0.5 56 0.04~0.12
BZX85C Series
Excel Semiconductor
www.excel-semi.com Rev. 3f, 1-Jun-2008
FaxBack +86-512-66607370 3/4
Characteristics (Tj=25℃ unless otherwise specified)
Ptot –Total Power Dissipation (W)
Tamb – Ambient Temperature(℃)
Figure1.Total Power Dissipation vs. Ambient
Temperature
CD –Diode Capacitance (pF)
Vz-Z-Voltage (V)
Figure3. Diode Capacitance vs. Z-Voltage
RthJA – Therm. Resist. Junction/
Ambient (K/W)
l – Lead Length (mm)
Figure2. Thermal Resistance vs. Lead Length
rz –Differential Z-Resistance (Ω)
Vz-Z-Voltage (V)
Figure4.Differential Z-Resistance vs.Z-Voltage
Zthp – Thermal Resistance for
Pulse Cond. (K/W)
tp –Pulse Length (ms)
Fi
g
ure5. Thermal Res
p
onse
BZX85C Series
Excel Semiconductor
www.excel-semi.com Rev. 3f, 1-Jun-2008
FaxBack +86-512-66607370 4/4
Dimensions in mm
Standard Glass Case
JEDEC DO-41
Marking
B
8
8
Z
5
V
X
C
2
Cathode Anode
26 min. 26 min. 4.5 max.
Φ0.85 max.
Φ2.8 max.
Cathode identification
B
8
Z
5
X
C
