IRF840A, SiHF840A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) * Low Gate Charge Qg Results in Simple Drive Requirement Available * Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Ruggedness * Fully Characterized Capacitance and Avalanche Voltage and Current * Effective Coss Specified * Compliant to RoHS Directive 2002/95/EC 500 RDS(on) () VGS = 10 V 0.85 Qg (Max.) (nC) 38 Qgs (nC) 9.0 Qgd (nC) 18 Configuration Single D TO-220AB APPLICATIONS * Switch Mode Power Supply (SMPS) * Uninterruptable Power Supply * High Speed Power Switching G G D TYPICAL SMPS TOPOLOGIES S * Two Transistor Forward * Half Bridge * Full Bridge S N-Channel MOSFET ORDERING INFORMATION Package TO-220AB IRF840APbF SiHF840A-E3 IRF840A SiHF840A Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 500 Gate-Source Voltage VGS 30 Continuous Drain Current VGS at 10 V TC = 25 C TC = 100 C Pulsed Drain Currenta ID IDM Linear Derating Factor Energyb UNIT V 8.0 5.1 A 32 1.0 W/C mJ EAS 510 Repetitive Avalanche Currenta IAR 8.0 A Repetitive Avalanche Energya EAR 13 mJ Single Pulse Avalanche Maximum Power Dissipation TC = 25 C Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque for 10 s 6-32 or M3 screw PD 125 W dV/dt 5.0 V/ns TJ, Tstg - 55 to + 150 300d C 10 lbf * in 1.1 N*m Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 C, L = 16 mH, Rg = 25 , IAS = 8.0 A (see fig. 12). c. ISD 8.0 A, dI/dt 100 A/s, VDD VDS, TJ 150 C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91065 S11-0506-Rev. B, 21-Mar-11 www.vishay.com 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF840A, SiHF840A Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 62 Case-to-Sink, Flat, Greased Surface RthCS 0.50 - Maximum Junction-to-Case (Drain) RthJC - 1.0 UNIT C/W SPECIFICATIONS (TJ = 25 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 A 500 - - V VDS/TJ Reference to 25 C, ID = 1 mA - 0.58 - V/C VGS(th) VDS = VGS, ID = 250 A 2.0 - 4.0 V nA Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance IGSS IDSS RDS(on) gfs VGS = 30 V - - 100 VDS = 500 V, VGS = 0 V - - 25 VDS = 400 V, VGS = 0 V, TJ = 125 C - - 250 ID = 4.8 Ab VGS = 10 V VDS = 50 V, ID = 4.8 Ab A - - 0.85 3.7 - - S - 1018 - - 155 - - 8.0 - Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Output Capacitance Coss VGS = 0 V; VDS = 1.0 V, f = 1.0 MHz 1490 Output Capacitance Coss VGS = 0 V; VDS = 400 V, f = 1.0 MHz 42 Effective Output Capacitance Total Gate Charge Gate-Source Charge Coss eff. VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 VGS = 0 V; VDS = 0 V to 400 Vc 56 Qg Qgs VGS = 10 V ID = 8 A, VDS = 400 V, see fig. 6 and 13b - - 38 - - 9.0 Gate-Drain Charge Qgd - - 18 Turn-On Delay Time td(on) - 11 - - 23 - - 26 - - 19 - - - 8.0 - - 32 - - 2.0 Rise Time Turn-Off Delay Time Fall Time tr td(off) pF VDD = 250 V, ID = 8 A Rg = 9.1 , RD = 31, see fig. 10b tf nC ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 C, IS = 8 A, VGS = 0 Vb TJ = 25 C, IF = 8 A, dI/dt = 100 A/sb V - 422 633 ns - 2.16 3.24 C Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s; duty cycle 2 %. c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS. www.vishay.com 2 Document Number: 91065 S11-0506-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF840A, SiHF840A Vishay Siliconix TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 10 102 VGS Top 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V 1 4.5 V 20 s Pulse Width TC = 25 C 0.1 0.1 1 10 1 4.0 10 4.5 V 1 20 s Pulse Width TC = 150 C 0.1 0.1 91065_02 1 10 102 VDS, Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics, TC = 150 C Document Number: 91065 S11-0506-Rev. B, 21-Mar-11 6.0 7.0 8.0 9.0 Fig. 3 - Typical Transfer Characteristics RDS(on), Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V 5.0 VGS, Gate-to-Source Voltage (V) 91065_03 Top 20 s Pulse Width VDS = 50 V 0.1 Fig. 1 - Typical Output Characteristics, TC = 25 C 102 TJ = 150 C TJ = 25 C 102 10 VDS, Drain-to-Source Voltage (V) 91065_01 ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 102 91065_04 3.0 ID = 8.0 A VGS = 10 V 2.5 2.0 1.5 1.0 0.5 0.0 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature (C) Fig. 4 - Normalized On-Resistance vs. Temperature www.vishay.com 3 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF840A, SiHF840A Vishay Siliconix VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd Capacitance (pF) 104 Ciss 103 Coss 102 10 Crss 102 ISD, Reverse Drain Current (A) 105 10 TJ = 150 C TJ = 25 C 1 1 102 10 103 VDS, Drain-to-Source Voltage (V) 91065_05 0.2 0.8 102 ID = 8.0 A VDS = 250 V VDS = 100 V 12 8 10 s 10 100 s 1 ms 1 10 ms 4 For test circuit see figure 13 0 0 91065_06 10 20 30 Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 TC = 25 C TJ = 150 C Single Pulse 0.1 40 QG, Total Gate Charge (nC) 1.4 Operation in this area limited by RDS(on) VDS = 400 V 16 1.1 Fig. 7 - Typical Source-Drain Diode Forward Voltage ID, Drain Current (A) VGS, Gate-to-Source Voltage (V) 0.5 VSD, Source-to-Drain Voltage (V) 91065_07 Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage 20 VGS = 0 V 0.1 1 10 91065_08 102 103 104 VDS, Drain-to-Source Voltage (V) Fig. 8 - Maximum Safe Operating Area Document Number: 91065 S11-0506-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF840A, SiHF840A Vishay Siliconix RD VDS VGS D.U.T. RG 8.0 + - VDD 10 V ID, Drain Current (A) 6.0 Pulse width 1 s Duty factor 0.1 % Fig. 10a - Switching Time Test Circuit 4.0 VDS 2.0 90 % 0.0 25 50 75 100 125 150 10 % VGS TC, Case Temperature (C) 91065_09 td(on) td(off) tf tr Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10b - Switching Time Waveforms Thermal Response (ZthJC) 10 1 D = 0.5 PDM 0.2 0.1 0.1 0.05 t1 t2 0.02 0.01 10-2 10-5 91065_11 Notes: 1. Duty Factor, D = t1/t2 2. Peak Tj = PDM x ZthJC + TC Single Pulse (Thermal Response) 10-4 10-3 10-2 0.1 1 t1, Rectangular Pulse Duration (s) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91065 S11-0506-Rev. B, 21-Mar-11 www.vishay.com 5 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF840A, SiHF840A Vishay Siliconix L Vary tp to obtain required IAS VDS D.U.T RG + - IAS QG 10 V V DD QGS QGD 10 V 0.01 tp VG Fig. 12a - Unclamped Inductive Test Circuit Charge VDS Fig. 12d - Basic Gate Charge Waveform tp VDD VDS IAS EAS, Single Pulse Avalanche Energy (mJ) Fig. 12b - Unclamped Inductive Waveforms 1200 ID 3.6 A 5.1 A Bottom 8.0 A Top 1000 VDSav, Avalanche Voltage (V) 600 580 560 540 520 800 0.0 600 1.0 2.0 3.0 4.0 5.0 7.0 6.0 8.0 IAV, Avalanche Current (A) 91065_12d 400 Fig. 13a - Typical Drain-to-Source Voltage vs. Avalanche Current 200 0 25 91065_12c 50 75 100 125 Current regulator Same type as D.U.T. 150 Starting TJ, Junction Temperature (C) 50 k Fig. 12c - Maximum Avalanche Energy vs. Drain Current 12 V 0.2 F 0.3 F + D.U.T. - VDS VGS 3 mA IG ID Current sampling resistors Fig. 13b - Gate Charge Test Circuit www.vishay.com 6 Document Number: 91065 S11-0506-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF840A, SiHF840A Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations * Low stray inductance * Ground plane * Low leakage inductance current transformer + - - Rg * * * * + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91065. Document Number: 91065 S11-0506-Rev. B, 21-Mar-11 www.vishay.com 7 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-220AB MILLIMETERS A E F D H(1) Q OP 3 2 L(1) 1 M* L b(1) INCHES DIM. MIN. MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 D 14.85 15.49 0.585 0.610 E 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.09 6.48 0.240 0.255 J(1) 2.41 2.92 0.095 0.115 L 13.35 14.02 0.526 0.552 0.150 L(1) 3.32 3.82 0.131 OP 3.54 3.94 0.139 0.155 Q 2.60 3.00 0.102 0.118 ECN: X12-0208-Rev. N, 08-Oct-12 DWG: 5471 Notes * M = 1.32 mm to 1.62 mm (dimension including protrusion) Heatsink hole for HVM * Xi'an and Mingxin actual photo C b e J(1) e(1) Revison: 08-Oct-12 Document Number: 71195 1 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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