Document Number: 91065 www.vishay.com
S11-0506-Rev. B, 21-Mar-11 1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Power MOSFET
IRF840A, SiHF840A
Vishay Siliconix
FEATURES
• Low Gate Charge Qg Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Effective Coss Specified
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptable Power Supply
• High Speed Power Switching
TYPICAL SMPS TOPOLOGIES
• Two Transistor Forward
•Half Bridge
• Full Bridge
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 16 mH, Rg = 25 , IAS = 8.0 A (see fig. 12).
c. ISD 8.0 A, dI/dt 100 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
PRODUCT SUMMARY
VDS (V) 500
RDS(on) ()V
GS = 10 V 0.85
Qg (Max.) (nC) 38
Qgs (nC) 9.0
Qgd (nC) 18
Configuration Single
N-Channel MOSFET
G
D
S
TO-220AB
GD
S
Available
RoHS*
COMPLIANT
ORDERING INFORMATION
Package TO-220AB
Lead (Pb)-free IRF840APbF
SiHF840A-E3
SnPb IRF840A
SiHF840A
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 500 V
Gate-Source Voltage VGS ± 30
Continuous Drain Current VGS at 10 V TC = 25 °C ID
8.0
ATC = 100 °C 5.1
Pulsed Drain CurrentaIDM 32
Linear Derating Factor 1.0 W/°C
Single Pulse Avalanche EnergybEAS 510 mJ
Repetitive Avalanche CurrentaIAR 8.0 A
Repetitive Avalanche EnergyaEAR 13 mJ
Maximum Power Dissipation TC = 25 °C PD125 W
Peak Diode Recovery dV/dtcdV/dt 5.0 V/ns
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C
Soldering Recommendations (Peak Temperature) for 10 s 300d
Mounting Torque 6-32 or M3 screw 10 lbf · in
1.1 N · m
* Pb containing terminations are not RoHS compliant, exemptions may apply
www.vishay.com Document Number: 91065
2S11-0506-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF840A, SiHF840A
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS.
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient RthJA -62
°C/WCase-to-Sink, Flat, Greased Surface RthCS 0.50 -
Maximum Junction-to-Case (Drain) RthJC -1.0
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 500 - - V
VDS Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.58 - V/°C
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V
Gate-Source Leakage IGSS V
GS = ± 30 V - - ± 100 nA
Zero Gate Voltage Drain Current IDSS
VDS = 500 V, VGS = 0 V - - 25 μA
VDS = 400 V, VGS = 0 V, TJ = 125 °C - - 250
Drain-Source On-State Resistance RDS(on) V
GS = 10 V ID = 4.8 Ab--0.85
Forward Transconductance gfs VDS = 50 V, ID = 4.8 Ab3.7 - - S
Dynamic
Input Capacitance Ciss VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
- 1018 -
pF
Output Capacitance Coss - 155 -
Reverse Transfer Capacitance Crss -8.0-
Output Capacitance Coss V
GS = 0 V; VDS = 1.0 V, f = 1.0 MHz 1490
Output Capacitance Coss V
GS = 0 V; VDS = 400 V, f = 1.0 MHz 42
Effective Output Capacitance Coss eff. VGS = 0 V; VDS = 0 V to 400 Vc56
Total Gate Charge Qg
VGS = 10 V ID = 8 A, VDS = 400 V,
see fig. 6 and 13b
--38
nC Gate-Source Charge Qgs --9.0
Gate-Drain Charge Qgd --18
Turn-On Delay Time td(on)
VDD = 250 V, ID = 8 A
Rg = 9.1 , RD = 31, see fig. 10b
-11-
ns
Rise Time tr -23-
Turn-Off Delay Time td(off) -26-
Fall Time tf -19-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current ISMOSFET symbol
showing the
integral reverse
p - n junction diode
--8.0
A
Pulsed Diode Forward CurrentaISM --32
Body Diode Voltage VSD TJ = 25 °C, IS = 8 A, VGS = 0 Vb--2.0V
Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 8 A, dI/dt = 100 A/μsb- 422 633 ns
Body Diode Reverse Recovery Charge Qrr - 2.16 3.24 μC
Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
S
D
G
Document Number: 91065 www.vishay.com
S11-0506-Rev. B, 21-Mar-11 3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF840A, SiHF840A
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 2 - Typical Output Characteristics, TC = 150 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
102
10
1
91065_01
Bottom
To p
VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
20 µs Pulse Width
TC = 25 °C
4.5 V
VDS, Drain-to-Source Voltage (V)
ID, Drain-to-Source Current (A)
102
10
1
0.1
0.1
102
10
1
0.1
102
10
1
0.1
91065_02
Bottom
To p
VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
20 µs Pulse Width
TC = 150 °C
4.5 V
VDS, Drain-to-Source Voltage (V)
ID, Drain-to-Source Current (A)
102
10
1
0.1
91065_03
TJ = 25 °C
20 µs Pulse Width
VDS = 50 V
ID, Drain-to-Source Current (A)
VGS, Gate-to-Source Voltage (V)
4.0 5.0 6.0 7.0 8.0 9.0
TJ = 150 °C
91065_04
I
D
= 8.0 A
V
GS
= 10 V
3.0
0.0
0.5
1.0
1.5
2.0
2.5
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
RDS(on), Drain-to-Source On Resistance
(Normalized)
www.vishay.com Document Number: 91065
4S11-0506-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF840A, SiHF840A
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
1
1
102103
102
91065_05
Capacitance (pF)
V
DS,
Drain-to-Source Voltage (V)
Ciss
Crss
Coss
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
10
10
105
104
103
91065_07
V
GS
= 0 V
VSD, Source-to-Drain Voltage (V)
ISD, Reverse Drain Current (A)
102
10
1
0.1
0.2 0.5 0.8 1.4
1.1
TJ = 25 °C
TJ = 150 °C
102
91065_08
10 µs
100 µs
1 ms
10 ms
Operation in this area limited
by RDS(on)
TC = 25 °C
TJ = 150 °C
Single Pulse
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain Current (A)
10
1
0.1
104
10 103
102
Document Number: 91065 www.vishay.com
S11-0506-Rev. B, 21-Mar-11 5
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF840A, SiHF840A
Vishay Siliconix
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
91065_09
I
D
, Drain Current (A)
T
C
, Case Temperature (°C)
0.0
2.0
4.0
8.0
6.0
25 1501251007550
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
10 V
+
-
VDS
VDD
VDS
90 %
10 %
VGS
td(on) trtd(off) tf
0.1 1
91065_11
Thermal Response (Z
thJC
)
t
1
, Rectangular Pulse Duration (s)
10
1
0.1
10-2
10-4 10-3 10-2
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
Single Pulse
(Thermal Response)
10-5
www.vishay.com Document Number: 91065
6S11-0506-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF840A, SiHF840A
Vishay Siliconix
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Fig. 12d - Basic Gate Charge Waveform
Fig. 13a - Typical Drain-to-Source Voltage vs.
Avalanche Current
Fig. 13b - Gate Charge Test Circuit
R
G
I
AS
0.01 Ω
t
p
D.U.T
L
V
DS
+
-V
DD
10 V
Var y t
p
to obtain
required I
AS
IAS
VDS
VDD
VDS
tp
91065_12c
1000
0
200
400
600
800
25 150
125
10075
50
Starting TJ, Junction Temperature (°C)
EAS, Single Pulse Avalanche Energy (mJ)
1200
Bottom
To p
ID
3.6 A
5.1 A
8.0 A
QGS QGD
QG
V
G
Charge
10 V
91065_12d
580
520
540
560
0.0 5.0
4.0
3.02.0
1.0
I
AV
, Avalanche Current (A)
V
DSav
, Avalanche Voltage (V)
600
8.0
7.0
6.0
D.U.T.
3 mA
VGS
VDS
IGID
0.3 µF
0.2 µF
50 kΩ
12 V
Current regulator
Current sampling resistors
Same type as D.U.T.
+
-
Document Number: 91065 www.vishay.com
S11-0506-Rev. B, 21-Mar-11 7
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF840A, SiHF840A
Vishay Siliconix
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91065.
P.W. Period
dI/dt
Diode recovery
dV/dt
Ripple ≤ 5 %
Body diode forward drop
Re-applied
voltage
Reverse
recovery
current
Body diode forward
current
VGS = 10 Va
ISD
Driver gate drive
D.U.T. lSD waveform
D.U.T. VDS waveform
Inductor current
D = P.W.
Period
+
-
+
+
+
-
-
-
Peak Diode Recovery dV/dt Test Circuit
VDD
• dV/dt controlled by Rg
• Driver same type as D.U.T.
• ISD controlled by duty factor “D”
• D.U.T. - device under test
D.U.T. Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
Rg
Note
a. VGS = 5 V for logic level devices
VDD
Package Information
www.vishay.com Vishay Siliconix
Revison: 08-Oct-12 1Document Number: 71195
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TO-220AB
Notes
* M = 1.32 mm to 1.62 mm (dimension including protrusion)
Heatsink hole for HVM
• Xi’an and Mingxin actual photo
M*
3
2
1
L
L(1)
D
H(1)
Q
Ø P
A
F
J(1)
b(1)
e(1)
e
E
b
C
MILLIMETERS INCHES
DIM. MIN. MAX. MIN. MAX.
A 4.25 4.65 0.167 0.183
b 0.69 1.01 0.027 0.040
b(1) 1.20 1.73 0.047 0.068
c 0.36 0.61 0.014 0.024
D 14.85 15.49 0.585 0.610
E 10.04 10.51 0.395 0.414
e 2.41 2.67 0.095 0.105
e(1) 4.88 5.28 0.192 0.208
F 1.14 1.40 0.045 0.055
H(1) 6.09 6.48 0.240 0.255
J(1) 2.41 2.92 0.095 0.115
L 13.35 14.02 0.526 0.552
L(1) 3.32 3.82 0.131 0.150
Ø P 3.54 3.94 0.139 0.155
Q 2.60 3.00 0.102 0.118
ECN: X12-0208-Rev. N, 08-Oct-12
DWG: 5471
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Revision: 12-Mar-12 1Document Number: 91000
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