Jan. 2000
Unit : Ω
The eight circuits share the COM and GND.
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
INPUT
OUTPUT
GND
2.7k
3k
7.2k
COM
IN7→→O7
10
IN5→→O5
5
12
INPUT OUTPUT
IN4→→O4
4
13
IN3→→O3
3
14
IN2→→O2
15
2
IN1→→O1
16
7
8
IN6→→O6
6
11
→COM COMMONGND
9
17
18
IN8→→O8
120
19
NC NC
NC : No connection
Package type 20P2E-A
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54585KP
8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
PIN CONFIGURATION
DESCRIPTION
M54585KP is eight-circuit Darlington transistor arrays with
clamping diodes. The circuits are made of NPN transistors.
Both the semiconductor integrated circuits perform high-cur-
rent driving with extremely low input-current supply.
FEATURES
●High breakdown voltage (BVCEO ≥ 50V)
●High-current driving (IC(max) = 500mA)
●With clamping diodes
●Driving available with TTL output or with PMOS IC output
●With shrink small outline package
APPLICATION
Drives of relays and printers, digit drives of indication ele-
ments such as LEDs and lamps, and MOS-bipolar logic IC
interfaces
FUNCTION
The M54585KP has eight circuits, which are NPN Darlington
transistors. Input transistors have resistance of 2.7kΩ be-
tween the base and input pin. A spike-killer clamping diode
is provided between each output pin and GND. Output tran-
sistor emitters are all connected to the GND pin.
Collector current is 500mA maximum. The maximum collec-
tor-emitter voltage is 50V.
CIRCUIT DIAGRAM
Collector-emitter voltage
Collector current
Input voltage
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
V
mA
V
mA
V
W
°C
°C
–0.5 ~ +50
500
–0.5 ~ +30
500
50
0.68
–20 ~ +75
–55 ~ +125
RatingsSymbol Parameter Conditions Unit
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75°C)
Output, H
Current per circuit output, L
Ta = 25°C, when mounted on board
VCEO
IC
VI
IF
VR
Pd
Topr
Tstg
Jan. 2000
ton toff
50%
50%
50%
50%
INPUT
OUTPUT
(1)Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50Ω,
V
I
= 3.85V
(2)Input-output conditions : R
L
= 25Ω, Vo = 10V
(3)Electrostatic capacity C
L
includes floating capacitance at
connections and input capacitance at probes
PG
50Ω
R
L
OUTPUT
INPUT Vo
C
L
OPEN
Measured device
“H” input voltage
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54585KP
8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –20 ~ +75°C)
TIMING DIAGRAM
NOTE 1 TEST CIRCUIT
ns
ns
—
—12
240 —
—
Symbol UnitParameter Test conditions Limits
min typ max
Turn-on time
Turn-off time
ton
toff CL = 15pF (note 1)
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Parameter
—
—
—
—
0
Limits
min typ max
Symbol Unit
—
—
VOOutput voltage
“L” input voltage
Duty Cycle ≤ 10%
Duty Cycle ≤ 50%
Collector current
(Current per 1 cir-
cuit when 8 circuits
are coming on si-
multaneously)
IC
VIH
50
200
70
30
30
0.6
V
mA
V
V
V
VIL
Ic ≤ 400mA
Ic ≤ 200mA
0
0
3.85
3.4
0
—
2.4
1.6
1.8
18
2.4
100
—
ICEO = 100µA
VI = 3.85V, IC = 400mA
VI = 3.4V, IC = 200mA
II = 3.85V
VI = 25V
IF = 400mA
VR = 50V
VCE = 4V, IC = 350mA, Ta = 25°C
—
1.3
1.0
0.95
8.7
1.5
—
2500
50
—
—
—
—
—
—
1000
V
(BR) CEO
V
Symbol UnitParameter Test conditions Limits
min typ+max
Collector-emitter breakdown voltage
VCE(sat)
Collector-emitter saturation voltage
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –20 ~ +75°C)
II
VF
IR
hFE
Input current
Clamping diode forward voltage
Clamping diode reverse current
DC amplification factor
V
mA
V
µA
—
+ : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any
conditions.
Jan. 2000
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54585KP
8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
TYPICAL CHARACTERISTICS
Thermal Derating Factor Characteristics
Ambient temperature Ta (°C)
Power dissipation Pd (W)
Output Saturation Voltage
Collector Current Characteristics
Output saturation voltage V
CE(sat)
(V)
Collector current Ic (mA)
Duty Cycle-Collector Characteristics
Duty cycle (%)
Collector current Ic (mA)
Duty Cycle-Collector Characteristics
Duty cycle (%)
Collector current Ic (mA)
DC Amplification Factor
Collector Current Characteristics
Collector current Ic (mA)
DC amplification factor h
FE
Grounded Emitter Transfer Characteristics
Input voltage V
I
(V)
Collector current Ic (mA)
0100
20 40 60 80
1
2
3
4
6
5
7
8
500
400
300
200
100
00100
20 40 60 80
1
2
3
45
6
87
1.0
0.6
0.4
0.2
00 25 50 75 100
0.8
0.408
0.68
400
300
200
100
00 0.5 1.0 1.5 2.0
Ta = –20°C
Ta = 25°C
Ta = 75°C
500
V
I
= 3.4V
•
The collector current values
represent the current per circuit.
•
Repeated frequency ≥ 10Hz
•
The value in the circle represents the
value of the simultaneously-operated circuit.
•
Ta = 25°C
500
400
300
200
0
100 •
The collector current
values represent the current
per circuit.
•
Repeated frequency ≥ 10Hz
•
The value in the circle represents the value of the simultaneously-operated circuit.
•
Ta = 75°C
10
1
10
2
10
3
10
2
10
3
10
4
23 57 23 57
2
3
5
7
2
3
5
7
Ta = –20°C
V
CE
= 4V
Ta = 75°C
Ta = 25°C
001234
400
300
200
100
0
500
Ta = 75°C
Ta = –20°C
Ta = 25°C
V
CE
= 4V
Jan. 2000
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54585KP
8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
Input Characteristics
Input voltage V
I
(V)
Input current I
I
(mA)
Clamping Diode Characteristics
Forward bias voltage V
F
(V)
Forward bias current I
F
(mA)
10
6
4
2
00 5 10 15 25
Ta = –20°C
20
Ta = 25°C
Ta = 75°C
8
0 0.5 1.0 1.5 2.0
500
400
300
200
100
0
Ta = –20°C
Ta = 25°C
Ta = 75°C
