MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54585KP 8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE DESCRIPTION M54585KP is eight-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. PIN CONFIGURATION NC 1 20 19 O1 IN2 3 18 O2 IN3 4 17 O3 IN4 5 16 O4 IN5 6 15 O5 IN6 7 14 O6 INPUT FEATURES High breakdown voltage (BVCEO 50V) High-current driving (IC(max) = 500mA) With clamping diodes Driving available with TTL output or with PMOS IC output With shrink small outline package NC IN1 2 IN7 8 13 O7 IN8 9 12 O8 GND OUTPUT 11 COM COMMON 10 NC : No connection Package type 20P2E-A CIRCUIT DIAGRAM COM APPLICATION Drives of relays and printers, digit drives of indication elements such as LEDs and lamps, and MOS-bipolar logic IC interfaces OUTPUT 2.7k INPUT 7.2k 3k FUNCTION The M54585KP has eight circuits, which are NPN Darlington transistors. Input transistors have resistance of 2.7k between the base and input pin. A spike-killer clamping diode is provided between each output pin and GND. Output transistor emitters are all connected to the GND pin. Collector current is 500mA maximum. The maximum collector-emitter voltage is 50V. ABSOLUTE MAXIMUM RATINGS Symbol VCEO IC VI IF VR Pd Topr Tstg The eight circuits share the COM and GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit : (Unless otherwise noted, Ta = -20 ~ +75C) Parameter Collector-emitter voltage Collector current Conditions Output, H Current per circuit output, L Input voltage Clamping diode forward current Clamping diode reverse voltage Power dissipation Operating temperature Storage temperature GND Ta = 25C, when mounted on board Ratings -0.5 ~ +50 500 -0.5 ~ +30 500 50 0.68 -20 ~ +75 -55 ~ +125 Unit V mA V mA V W C C Jan. 2000 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54585KP 8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = -20 ~ +75C) Symbol Limits Parameter VO Output voltage Collector current (Current per 1 cir- Duty Cycle 10% cuit when 8 circuits are coming on siDuty Cycle 50% multaneously) Ic 400mA "H" input voltage Ic 200mA "L" input voltage IC VIH VIL Unit min 0 typ -- max 50 0 -- 200 0 -- 70 3.85 3.4 -- 30 30 V V 0.6 V V mA 0 -- -- ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = -20 ~ +75C) Symbol Parameter V (BR) CEO Collector-emitter breakdown voltage VCE(sat) II VF IR h FE Test conditions ICEO = 100A VI = 3.85V, IC = 400mA Collector-emitter saturation voltage VI = 3.4V, I C = 200mA II = 3.85V Input current VI = 25V Clamping diode forward voltage IF = 400mA Clamping diode reverse current VR = 50V DC amplification factor VCE = 4V, I C = 350mA, Ta = 25C min Limits typ+ max 50 -- -- -- -- -- -- 1.3 1.0 0.95 8.7 1.5 -- 2.4 1.6 1.8 18 2.4 -- 1000 -- 2500 100 -- Unit V V mA V A -- + : The typical values are those measured under ambient temperature (Ta) of 25C. There is no guarantee that these values are obtained under any conditions. SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25C) Symbol Parameter ton Turn-on time toff Turn-off time Limits Test conditions min CL = 15pF (note 1) typ max -- 12 -- -- 240 -- Unit ns ns TIMING DIAGRAM NOTE 1 TEST CIRCUIT INPUT Vo 50% Measured device 50% INPUT RL OPEN PG OUTPUT OUTPUT 50 CL 50% 50% ton toff (1)Pulse generator (PG) characteristics : PRR = 1kHz, tw = 10s, tr = 6ns, tf = 6ns, Zo = 50, VI = 3.85V (2)Input-output conditions : RL = 25, Vo = 10V (3)Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes Jan. 2000 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54585KP 8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE TYPICAL CHARACTERISTICS Output Saturation Voltage Collector Current Characteristics Thermal Derating Factor Characteristics 500 1.0 0.68 0.6 0.408 0.4 0.2 0 Collector current Ic (mA) Collector current Ic (mA) 0.8 0 25 50 75 400 300 200 Ta = 25C 100 0 100 0 400 1 300 2.0 2 200 3 4 5 6 7 8 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. 0 20 40 *Ta = 25C 60 1 200 2 100 0 100 80 300 0 20 40 60 80 100 Duty cycle (%) DC Amplification Factor Collector Current Characteristics 104 3 45 67 8 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *Ta = 75C Duty cycle (%) Grounded Emitter Transfer Characteristics 500 VCE = 4V VCE = 4V Ta = 75C 3 2 103 Ta = -20C 7 5 Ta = 25C 3 2 102 101 2 3 5 7 102 2 3 Collector current Ic (mA) 5 7 103 Collector current Ic (mA) DC amplification factor hFE 1.5 Duty Cycle-Collector Characteristics 400 7 5 1.0 Duty Cycle-Collector Characteristics 500 0 0.5 Output saturation voltage VCE(sat) (V) 500 100 Ta = -20C Ta = 75C Ambient temperature Ta (C) Collector current Ic (mA) Power dissipation Pd (W) VI = 3.4V 400 300 200 Ta = 75C Ta = 25C 100 0 Ta = -20C 0 1 2 3 4 Input voltage VI (V) Jan. 2000 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54585KP 8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE Input Characteristics Clamping Diode Characteristics 500 10 Forward bias current IF (mA) Ta = -20C Input current II (mA) 8 6 Ta = 25C Ta = 75C 4 2 0 0 5 10 15 Input voltage VI (V) 20 25 400 300 200 Ta = 25C 100 Ta = -20C Ta = 75C 0 0 0.5 1.0 1.5 2.0 Forward bias voltage VF (V) Jan. 2000