Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 9
1Publication Order Number:
M1MA141WKT1/D
M1MA141WKT1G,
M1MA142WKT1G,
SM1MA142WKT1G,
Common Cathode Silicon
Dual Switching Diode
This Common Cathode Silicon Epitaxial Planar Dual Diode is
designed for use in ultra high speed switching applications. This
device is housed in the SC−70 package which is designed for low
power surface mount applications.
Features
Fast trr, < 3.0 ns
Low CD, < 2.0 pF
AEC−Q101 Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS (TA = 25C)
Rating Symbol Value Unit
Reverse Voltage
M1MA141WKT1G
M1MA142WKT1G, SM1MA142WKT1G
VR40
80
Vdc
Peak Reverse Voltage
M1MA141WKT1G
M1MA142WKT1G, SM1MA142WKT1G
VRM 40
80
Vdc
Forward Current
Single
Dual
IF100
150
mAdc
Peak Forward Current
Single
Dual
IFM 225
340
mAdc
Peak Forward Surge Current
M1MA141WKT1G
M1MA142WKT1G, SM1MA142WKT1G
IFSM
(Note 1) 500
750
mAdc
THERMAL CHARACTERISTICS
Rating Symbol Max Unit
Power Dissipation PD150 mW
Junction Temperature TJ150 C
Storage Temperature Tstg −55 to
+ 150
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. t = 1 SEC
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
SC−70 (SOT−323)
CASE 419
STYLE 5
MARKING DIAGRAM
Mx = Device Code
x = T for 141
U for 142
M = Date Code*
G=Pb−Free Package
CATHODE
3
12
ANODE
Device Package Shipping†
ORDERING INFORMATION
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Mx M G
G
M1MA142WKT1G SC−70
(Pb−Free)
3,000 /
Tape & Reel
M1MA141WKT1G SC−70
(Pb−Free)
3,000 /
Tape & Reel
(Note: Microdot may be in either location)
*Date Code orientation may vary depending upon
manufacturing location.
SM1MA142WKT1G SC−70
(Pb−Free)
3,000 /
Tape & Reel
M1MA141WKT1G, M1MA142WKT1G, SM1MA142WKT1G,
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25C)
Characteristic Condition Symbol Min Max Unit
Reverse Voltage Leakage Current
M1MA141WKT1G
M1MA142WKT1G, SM1MA142WKT1G
VR = 35 V
VR = 75 V
IR
−
−
0.1
0.1
mAdc
Forward Voltage IF = 100 mA VF−1.2 Vdc
Reverse Breakdown Voltage
M1MA141WKT1G
M1MA142WKT1G, SM1MA142WKT1G
IR = 100 mAVR40
80
−
−
Vdc
Diode Capacitance VR = 0, f = 1.0 MHz CD−2.0 pF
Reverse Recovery Time (Figure 1) IF = 10 mA, VR = 6.0 V,
RL = 100 W, Irr = 0.1 IR
trr
(Note 2)
−3.0 ns
2. trr Test Circuit
M1MA141WKT1G, M1MA142WKT1G, SM1MA142WKT1G,
http://onsemi.com
3
A
RL
trtp
t
10%
90%
VRtp = 2 ms
tr = 0.35 ns
IF
trr
t
Irr = 0.1 IR
IF = 10 mA
VR = 6 V
RL = 100 W
RECOVERY TIME EQUIVALENT TEST CIRCUIT INPUT PULSE OUTPUT PULSE
Figure 1. Recovery Time Equivalent Test Circuit
100
0.2 0.4
VF, FORWARD VOLTAGE (VOLTS)
0.6 0.8 1.0 1.2
10
1.0
0.1
TA = 85C
10
0
VR, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01
0.001
10 20 30 40 50
0.68
0
VR, REVERSE VOLTAGE (VOLTS)
0.64
0.6
0.56
0.52
CD, DIODE CAPACITANCE (pF)
2468
IF, FORWARD CURRENT (mA)
Figure 2. Forward Voltage Figure 3. Reverse Current
Figure 4. Diode Capacitance
TA = -40C
TA = 25C
TA = 150C
TA = 125C
TA = 85C
TA = 55C
TA = 25C
IR, REVERSE CURRENT (A)
M1MA141WKT1G, M1MA142WKT1G, SM1MA142WKT1G,
http://onsemi.com
4
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE N
AA2
D
e1
b
e
E
A1
c
L
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
0.05 (0.002)
1.9
0.075
0.65
0.025
0.65
0.025
0.9
0.035
0.7
0.028 ǒmm
inchesǓ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
HE
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.80 0.90 1.00 0.032
INCHES
A1 0.00 0.05 0.10 0.000
A2 0.70 REF
b0.30 0.35 0.40 0.012
c0.10 0.18 0.25 0.004
D1.80 2.10 2.20 0.071
E1.15 1.24 1.35 0.045
e1.20 1.30 1.40 0.047
0.035 0.040
0.002 0.004
0.014 0.016
0.007 0.010
0.083 0.087
0.049 0.053
0.051 0.055
NOM MAX
L
2.00 2.10 2.40 0.079 0.083 0.095
HE
e1 0.65 BSC
0.38
0.028 REF
0.026 BSC
0.015
0.20 0.56 0.008 0.022
STYLE 5:
PIN 1. ANODE
2. ANODE
3. CATHODE
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M1MA141WKT1/D
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