PBSS302NX,115 - NEXPERIA - Datasheet.Directory

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1. Product profile

1.1 General description

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89

(SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.

PNP complement: PBSS302PX.

1.2 Features

Low collector-emitter saturation voltage VCEsat

High collector current capability IC and ICM

High collector current gain (hFE) at high IC

High efficiency due to less heat generation

Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

1.3 Applications

DC-to-DC conversion

MOSFET gate driving

Motor control

Charging circuits

Power switches (e.g. motors, fans)

1.4 Quick reference data

[1] Pulse test: tp≤300 μs; δ≤0.02.

PBSS302NX

20 V, 5.3 A NPN low VCEsat (BISS) transistor

Rev. 02 — 20 November 2009 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VCEO collector-emitter voltage open base - - 20 V

ICcollector current - - 5.3 A

ICM peak collector current single pulse;

tp≤1ms - - 10.6 A

RCEsat collector-emitter

saturation resistance IC=4A;

IB=200mA [1] -2840mΩ

Product data sheet Rev. 02 — 20 November 2009 2 of 15

NXP Semiconductors PBSS302NX

20 V, 5.3 A NPN low VCEsat (BISS) transistor

2. Pinning information

3. Ordering information

4. Marking

[1] * = -: made in Hong Kong

* = p: made in Hong Kong

* = t: made in Malaysia

* = W: made in China

Table 2. Pinning

Pin Description Simplified outline Symbol

1emitter

2 collector

3base

321 sym04

Table 3. Ordering information

Type number Package

Name Description Version

PBSS302NX SC-62 plastic surface-mounted package; collector pad for

good heat transfer; 3 leads SOT89

Table 4. Marking codes

Type number Marking code [1]

PBSS302NX *5C

Product data sheet Rev. 02 — 20 November 2009 3 of 15

NXP Semiconductors PBSS302NX

20 V, 5.3 A NPN low VCEsat (BISS) transistor

5. Limiting values

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.

[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VCBO collector-base voltage open emitter - 20 V

VCEO collector-emitter voltage open base - 20 V

VEBO emitter-base voltage open collector - 5 V

ICcollector current - 5.3 A

ICM peak collector current single pulse;

tp≤1ms -10.6A

Ptot total power dissipation Tamb ≤25 °C[1] -0.6W

[2] -1.65W

[3] -2.1W

Tjjunction temperature - 150 °C

Tamb ambient temperature −65 +150 °C

Tstg storage temperature −65 +150 °C

(1) Ceramic PCB, Al2O3, standard footprint

(2) FR4 PCB, mounting pad for collector 6 cm2

(3) FR4 PCB, standard footprint

Fig 1. Power derating curves

006aaa556

Tamb (°C)

−75 17512525 75−25

1.0

0.5

1.5

2.0

2.5

Ptot

(W)

(3)

(2)

(1)

Product data sheet Rev. 02 — 20 November 2009 4 of 15

NXP Semiconductors PBSS302NX

20 V, 5.3 A NPN low VCEsat (BISS) transistor

6. Thermal characteristics

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.

[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-a) thermal resistance from

junction to ambient in free air [1] --208K/W

[2] --76K/W

[3] --60K/W

Rth(j-sp) thermal resistance from

junction to solder point --20K/W

FR4 PCB, standard footprint

Fig 2. Transient thermal impedance from junctio n to ambient as a function of pulse duration; typical values

006aaa557

10−51010−2

10−4102

10−1

tp (s)

10−3103

0.20

0.10

102

103

Zth(j-a)

(K/W)

0.05

0.02

0.01

δ = 1

0.75

0.50

0.33

Product data sheet Rev. 02 — 20 November 2009 5 of 15

NXP Semiconductors PBSS302NX

20 V, 5.3 A NPN low VCEsat (BISS) transistor

FR4 PCB, mounting pad for collector 6 cm2

Fig 3. Transient thermal impedance from junctio n to ambient as a function of pulse duration; typical values

Ceramic PCB, Al2O3, standard footprint

Fig 4. Transient thermal impedance from junctio n to ambient as a function of pulse duration; typical values

006aaa558

10−51010−2

10−4102

10−1

tp (s)

10−3103

0.01

0.05

0.10

0.20

0.33

δ = 1

0.02

102

Zth(j-a)

(K/W)

10−1

0.75

0.50

006aaa559

10−51010−2

10−4102

10−1

tp (s)

10−3103

0.33

0.10

0.01

0.02

102

Zth(j-a)

(K/W)

10−1

0.05

δ = 1

0.75

0.50

0.20

Product data sheet Rev. 02 — 20 November 2009 6 of 15

NXP Semiconductors PBSS302NX

20 V, 5.3 A NPN low VCEsat (BISS) transistor

7. Characteristics

[1] Pulse test: tp≤300 μs; δ≤0.02.

Table 7. Characteristics

Tamb =25

C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

ICBO collector-base cut-off

current VCB =20V; I

E= 0 A - - 100 nA

VCB =20V; I

E=0A;

Tj=150°C--50μA

IEBO emitter-base cut-off

current VEB =5V; I

C= 0 A - - 100 nA

hFE DC current gain VCE =2V; I

C=0.5A [1] 300 570 -

VCE =2V; I

C=1A [1] 300 550 -

VCE =2V; I

C=2A [1] 250 520 -

VCE =2V; I

C=4A [1] 200 450 -

VCE =2V; I

C=6A [1] 200 380 -

VCEsat collector-emitter

saturation voltage IC=0.5A; I

B=50mA [1] -2025mV

IC=1A; I

B=50mA [1] -3550mV

IC=1A; I

B=10mA [1] -5070mV

IC=2A; I

B=40mA [1] -70100mV

IC=4A; I

B=200mA [1] -110160mV

IC=4A; I

B=400mA [1] - 100 140 mV

IC=4A; I

B=40mA [1] - 140 220 mV

IC=5.3A; I

B=265mA [1] - 140 200 mV

RCEsat collector-emitter

saturation resistance IC=4A; I

B=200mA [1] -2840mΩ

IC=4A; I

B=40mA [1] -3555mΩ

VBEsat base-emitter

saturation voltage IC=1A; I

B=100mA [1] -0.820.9V

IC=4A; I

B=400mA [1] -0.921.05V

VBEon base-emitter turn-on

voltage VCE =2V; I

C=2A [1] -0.750.85V

tddelay time VCC =12.5V; I

C=3A;

IBon =0.15A;

IBoff =−0.15 A

-15- ns

trrise time - 40 - ns

ton turn-on time - 55 - ns

tsstorage time - 270 - ns

tffall time - 85 - ns

toff turn-off time - 355 - ns

fTtransition frequency VCE =10V; I

C=0.1A;

f=100MHz - 140 - MHz

Cccollector capacitance VCB =10V; I

E=i

e=0A;

f=1MHz - 95 150 pF

Product data sheet Rev. 02 — 20 November 2009 7 of 15

NXP Semiconductors PBSS302NX

20 V, 5.3 A NPN low VCEsat (BISS) transistor

VCE =2V

(1) Tamb = 100 °C

(2) Tamb =25°C

(3) Tamb =−55 °C

Tamb =25°C

Fig 5. DC current gain as a function of collector

current; typical values Fig 6. Collector current as a function of

collector-emitter voltage; typical values

VCE =2V

(1) Tamb =−55 °C

(2) Tamb =25°C

(3) Tamb = 100 °C

IC/IB=20

(1) Tamb =−55 °C

(2) Tamb =25°C

(3) Tamb = 100 °C

Fig 7. Base-emitter voltage as a function of collector

current; typical values Fig 8. Base-emitter satur ation voltage as a function

of collector current; typica l val ue s

006aaa572

400

600

200

800

1000

hFE

IC (mA)

10−1104

103

110

(3)

(2)

(1)

006aaa578

VCE (V)

054231

(A)

IB (mA) = 50

006aaa573

0.4

0.8

1.2

VBE

(V)

IC (mA)

10−1104

103

110

(3)

(2)

(1)

006aaa576

0.4

0.8

1.2

VBEsat

(V)

IC (mA)

10−1104

103

110

(3)

(2)

(1)

Product data sheet Rev. 02 — 20 November 2009 8 of 15

NXP Semiconductors PBSS302NX

20 V, 5.3 A NPN low VCEsat (BISS) transistor

IC/IB=20

(1) Tamb = 100 °C

(2) Tamb =25°C

(3) Tamb =−55 °C

Tamb =25°C

(1) IC/IB= 100

(2) IC/IB=50

(3) IC/IB=10

Fig 9. Collector-emitter saturation voltage as a

function of collector current; typical values Fig 10. Collector-emitter satu ra tion voltage as a

function of collector current; typical values

IC/IB=20

(1) Tamb = 100 °C

(2) Tamb =25°C

(3) Tamb =−55 °C

Tamb =25°C

(1) IC/IB= 100

(2) IC/IB=50

(3) IC/IB=10

Fig 11. Collector-emitter saturation re sistance as a

function of collector current; typical values Fig 12. Collector-emitter saturation resistance as a

function of collector current; typical values

006aaa574

10−1

10−2

VCEsat

(V)

10−3

IC (mA)

10−1104

103

110

(3)

(2)

(1)

006aaa575

10−1

10−2

VCEsat

(V)

10−3

IC (mA)

10−1104

103

110

(3)

(2)

(1)

006aaa577

IC (mA)

10−1104

103

110

10−1

102

103

RCEsat

(Ω)

10−2

(3)

(2)

(1)

006aaa579

IC (mA)

10−1104

103

110

10−1

102

103

RCEsat

(Ω)

10−2

(3)

(2)

(1)

Product data sheet Rev. 02 — 20 November 2009 9 of 15

NXP Semiconductors PBSS302NX

20 V, 5.3 A NPN low VCEsat (BISS) transistor

8. Test information

Fig 13. BISS transistor switching time definition

VCC = 12.5 V; IC=3A; I

Bon = 0.15 A; IBoff =−0.15 A

Fig 14. Test circuit for switching times

006aaa003

IBon (100 %)

input pulse

(idealized waveform)

IBoff

90 %

10 %

IC (100 %)

ton

90 %

10 %

output pulse

(idealized waveform)

toff

DUT

mlb826

(probe)

450 Ω

(probe)

450 Ω

oscilloscope oscilloscope

VBB

VCC

Product data sheet Rev. 02 — 20 November 2009 10 of 15

NXP Semiconductors PBSS302NX

20 V, 5.3 A NPN low VCEsat (BISS) transistor

9. Package outline

10. Packing information

[1] For further information and the availability of packing methods, see Section 15.

Fig 15. Package outline SOT89 (SC-62/TO-243)

06-08-29Dimensions in mm

4.6

4.4

1.8

1.4

1.6

1.4

1.2

0.8

1.5

0.48

0.35

0.44

0.23

0.53

0.40

2.6

2.4 4.25

3.75

123

Table 8. Packing methods

The indicated -xxx are the last thre e digits of the 12NC ordering code.[1]

Type number Package Description Packing quantity

1000 4000

PBSS302NX SOT89 8 mm pitch, 12 mm tape and reel -115 -135

Product data sheet Rev. 02 — 20 November 2009 11 of 15

NXP Semiconductors PBSS302NX

20 V, 5.3 A NPN low VCEsat (BISS) transistor

11. Soldering

Fig 16. Reflow soldering footprint SOT89 (SC-62)

Not recommended for wave soldering

Fig 17. Wave soldering footprint SOT89 (SC-62)

msa442

1.00

(3x)

4.85

4.60

1.20

4.75

0.60 (3x)

0.70 (3x)

3.70

3.95

1.20

0.50

1.70

132

0.20

0.85

1.20

1.90

2.00

2.25

solder lands

solder resist

occupied area

solder paste

Dimensions in mm

msa423

preferred transport direction during soldering

3.00

7.60

6.60

1.20

5.30

1.50

0.50

3.50

2.40

0.70

solder lands

solder resist

occupied area

Dimensions in mm

Product data sheet Rev. 02 — 20 November 2009 12 of 15

NXP Semiconductors PBSS302NX

20 V, 5.3 A NPN low VCEsat (BISS) transistor

12. Mounting

PCB thickness:

FR4 PCB = 1.6 mm

ceramic PCB = 0.635 mm

PCB thickness = 1.6 mm

Fig 18. FR4 PCB, standard footprint;

ceramic PCB, Al2O3, standard

footprint SOT89 (SC-62)

Fig 19. FR4 PCB, mounting pad for

collector 6 cm2 SOT89 (SC-62)

001aaa234

2.5 mm

5 mm

1.6 mm

0.5 mm

1 mm

3.96 mm

3 mm

2.5 mm

1 mm

32 mm

001aaa235

2.5 mm

5 mm

1.6 mm

0.5 mm

1 mm

3.96 mm

30 mm

32 mm

Product data sheet Rev. 02 — 20 November 2009 13 of 15

NXP Semiconductors PBSS302NX

20 V, 5.3 A NPN low VCEsat (BISS) transistor

13. Revision history

Table 9. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PBSS302NX_2 20091120 Product data sheet - PBSS302NX_1

Modifications: •This data sheet was changed to reflec t the new company name NXP Semiconductors,

including new legal definitions and disclaimers. No changes were made to the technical

content.

•Figure 15 “Package outline SOT89 (SC-62/TO-243)”: updated

•Figure 16 “Reflow soldering footprint SOT89 (SC-62)”: updated

•Figure 17 “Wave soldering footprint SOT89 (SC-62)”: updated

PBSS302NX_1 20060824 Product data sheet - -

Product data sheet Rev. 02 — 20 November 2009 14 of 15

NXP Semiconductors PBSS302NX

20 V, 5.3 A NPN low VCEsat (BISS) transistor

14. Legal information

14.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of de vice(s) descr ibed in th is document m ay have cha nged since thi s document w as publish ed and may di ffe r in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

14.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warrant ies as to t he accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short dat a sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not b e relied u pon to cont ain det ailed and

full information. For detailed and full information se e the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall pre va il.

14.3 Disclaimers

General — In formation in this document is believed to be accurate and

reliable. However, NXP Semiconductors does not give an y represent ations or

warranties, expressed or impli ed, as to the accuracy or completeness of such

information and shall have no liability for th e co nsequences of use of such

information.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all informa tion supplied prior

to the publication hereof .

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suitable for use in medical, military, aircraft,

space or life support equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in personal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for il lustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ra tings System of IEC 60134) may cause permanent

damage to the device. Limiting values are stress ratings only and operation of

the device at these or any other co nditions above those given in the

Characteristics sections of this document is not implied. Exposure to limiting

values for extended periods may af fect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold

subject to the general terms and conditions of commercial sale, as publi sh ed

at http://www.nxp.com/profile/terms, including those pe rtaining to warranty,

intellectual property rights infringement and limitation of liability, unless

explicitly otherwise agreed to in writing by NXP Semiconductors. In case of

any inconsistency or conflict between inf ormation in this document and such

terms and conditions, the latter will prevail.

No offer to sell or license — Not hing in this document may be interpret ed or

construed as an of fer t o sell product s that is open for accept ance or the gr ant,

conveyance or implication of any license under any copyrights, patents or

other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein

may be subject to export control regulatio ns. Export might require a prior

authorization from national authorities.

Quick reference data — The Quick reference data i s an extr act of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

14.4 Trademarks

Notice: All refe renced brands, produc t names, service names and trademarks

are the property of their respective ow ners.

15. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the product specification.

NXP Semiconductors PBSS302NX

20 V, 5.3 A NPN low VCEsat (BISS) transistor

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of rele ase: 20 November 2009

Document identifier: PBSS302NX_2

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

16. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6 Thermal characteristics . . . . . . . . . . . . . . . . . . 4

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 9

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10

10 Packing information . . . . . . . . . . . . . . . . . . . . 10

11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

12 Mounting. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

13 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13

14 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14

14.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14

14.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

14.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 14

14.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14

15 Contact information. . . . . . . . . . . . . . . . . . . . . 14

16 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15