ECH8613
No.7780-1/4
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7780
ECH8613 P-Channel Silicon MOSFET
High-Speed Switching Applications
Features
•Low ON-resistance.
•High-speed switching.
•2.5V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS --12 V
Gate-to-Source Voltage VGSS ±10 V
Drain Current (DC) ID--5 A
Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% --40 A
Allowable Power Dissipation PD
Mounted on a ceramic board (900mm
2
✕0.8mm)1unit
1.3 W
Total Dissipation PTMounted on a ceramic board (900mm2✕0.8mm) 1.5 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0 --12 V
Zero-Gate Voltage Drain Current IDSS1V
DS=--4V, VGS=0 --1 µA
IDSS2V
DS=--12V, VGS=0 --10 µA
Gate-to-Source Leakage Current IGSS VGS=±8V, VDS=0 ±10 µA
Cutoff Voltage VGS(off) VDS=--6V, ID=--1mA --0.4 --1.4 V
Forward T ransfer Admittance yfsVDS=--6V, ID=--2.5A 5.5 9.3 S
RDS(on)1 ID=--2A, VGS=--5V 26 33 mΩ
Static Drain-to-Source On-State Resistance
RDS(on)2 ID=--1A, VGS=--4.5V 28 37 mΩ
RDS(on)3 ID=--0.5A, VGS=--2.5V 43 60 mΩ
Input Capacitance Ciss VDS=--6V, f=1MHz 1165 pF
Output Capacitance Coss VDS=--6V, f=1MHz 320 pF
Reverse T ransfer Capacitance Crss VDS=--6V, f=1MHz 265 pF
Marking : FF Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
71504 TS IM T A-101131
ECH8613
No.7780-2/4
Continued from preceding page.
Ratings
Parameter Symbol Conditions min typ max Unit
Turn-ON Delay Time td(on) See specified Test Circuit. 12 ns
Rise T ime trSee specified Test Circuit. 340 ns
Turn-OFF Delay Time td(off) See specified Test Circuit. 100 ns
Fall T ime tfSee specified Test Circuit. 130 ns
Total Gate Charge Qg VDS=--6V, VGS=--5V, ID=--5A 9.5 nC
Gate-to-Source Charge Qgs VDS=--6V, VGS=--5V, ID=--5A 2.1 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--6V, VGS=--5V, ID=--5A 1.4 nC
Diode Forward Voltage VSD IS=--5A, VGS=0 0.83 --1.5 V
Package Dimensions
unit : mm
2206B
Electrical Connection Switching Time Test Circuit
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : ECH8
14
85 0.15
0.25
0.25 2.8
2.3
0.65
2.9
0.3
0.9
0.07
PW=10µs
D.C.≤1%
P.G 50Ω
G
S
D
ID= --3A
RL=2Ω
VDD= --6V
VOUT
ECH8613
VIN
0V
--5V
VIN
876 5
123 4
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
Top view
ECH8613
No.7780-3/4
RDS(on) -- VGS
Drain-to-Source Voltage, VDS -- V
ID -- VDS
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
ID -- VGS
Drain Current, ID -- A
RDS(on) -- Ta
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Gate-to-Source Voltage, VGS -- V Ambient Temperature, Ta -- °C
0
0
--0.5
--2.0
--1.5
--1.0
--2.5
--3.0
--3.5
--4.0
--4.5
--5.0
--1.0--0.2--0.1 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9
VGS= --1.5V
--
2.0V
--2.5V
--5.0V
--3.0V
0
0--0.4--0.2 --0.6 --1.0--0.8 --1.2 --1.4
--4
--5
--3
--2
--1
--8
--7
--6
--1.6 --1.8 --2.0
VDS= --6V
--25°C
Ta=75°C
IT07059 IT07060
--4.5V
25°C
0
0--2
10
--4
20
--6
30
40
50
60
70
80
90
100
--8 --10
Ta=25°C
--60 --40 --20 0 16020 40 60 80 100 120 140
80
70
60
40
50
10
20
30
0
IT07061 IT07062
ID= - -500mA
--2A
--1A
ID= --2A, VGS= --5V
ID= --0.5A, VGS= --2.5V
ID= --1A, VGS= --4.5V
--0.001
0.01 --0.01
23 57 23 57 23 57 23 57
--0.1 --1.0 --10
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
3VDS= --6V
75°C
25°C
Ta= --25°C
IT07063
--0.01 --0.1
223 57 --1.0
23 57 23 57
1000
100
10
5
7
3
7
5
3
2
7
5
3
2
VDD= --6V
VGS= --5V
td(on)
tr
tf
td(off)
IT07065
--0.01 --0.5--0.4 --0.7--0.6 --0.8 --0.9 --1.0 --1.1
--10
--1.0
7
5
3
2
7
5
3
2
7
5
3
2
--0.1
--25
°
C
25°C
Ta=75
°C
IT07064
VGS=0
0 --2 --4 --6 --8 --10 --12
100
1000
2
7
5
3
2
3
Ciss
Coss
Crss
f=1MHz
IT07066
Forward Transfer Admittance, yfs -- S
yfs -- ID
Forward Current, IF -- A
IF -- VSD
SW Time -- IDCiss, Coss, Crss -- VDS
Drain Current, ID -- A
Switching Time, SW Time -- ns
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -- pF
Drain Current, ID -- A Diode Forward Voltage, VSD -- V
ECH8613
No.7780-4/4
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of July, 2004. Specifications and information herein are subject
to change without notice.
PS
VGS -- Qg A S O
Total Gate Charge, Qg -- nC
Gate-to-Source Voltage, VGS -- V
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Ambient Temperature, Ta -- °C
PD -- Ta
Allowable Power Dissipation, PD -- W
012345678910
0
--0.5
--1.0
--1.5
--2.0
--2.5
--3.0
--3.5
--4.0
--4.5
--5.0
VDS= --6V
ID= --5A
IT07067 --10--1.0--0.01 --0.1 23 5723 57 23 3275
7
5
3
2
7
5
3
2
7
5
3
2
--10
7
5
3
2
--100
--1.0
--0.1
--0.01
IT07068
IDP= --40A
ID= --5A
Operation in this
area is limited by RDS(on).
100ms
<10µs
DC operation
1ms
10ms
0 20 40 60 100 120 140
0
0.2
0.4
0.6
0.8
1.0
80
1.8
1.6
1.5
1.4
1.3
1.2
160
IT07069
Ta=25°C
Single pulse
Mounted on a ceramic board (900mm
2
✕0.8mm)1unit
Total dissipation
1unit
Mounted on a ceramic board (900mm
2
✕0.8mm) 1unit
