IPP030N10N3 G IPI030N10N3 G
OptiMOS™3 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x RDS(on) product (FOM)
• Very low on-resistance RDS(on)
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current IDTC=25 °C2) 100 A
TC=100 °C 100
Pulsed drain current2) ID,pulse TC=25 °C 400
Avalanche energy, single pulse EAS ID=100 A, RGS=25 W1000 mJ
Gate source voltage VGS ±20 V
Power dissipation Ptot TC=25 °C 300 W
Operating and storage temperature Tj,Tstg -55 ... 175 °C
IEC climatic category; DIN IEC 68-1 55/175/56
Value
1)J-STD20 and JESD22
2) See figure 3
VDS 100 V
RDS(on),max 3mW
ID100 A
Product Summary
Type IPP030N10N3 G IPI030N10N3 G
Package PG-TO220-3 PG-TO262-3
Marking 030N10N 030N10N
Rev. 2.1 page 1 2011-07-18
IPP030N10N3 G IPI030N10N3 G
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case RthJC - - 0.5 K/W
Thermal resistance, RthJA minimal footprint - - 62
junction - ambient 6 cm2cooling area3) - - 40
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS=0 V, ID=1 mA 100 - - V
Gate threshold voltage VGS(th) VDS=VGS,ID=275 µA 2 2.7 3.5
Zero gate voltage drain current IDSS VDS=100 V, VGS=0 V,
Tj=25 °C - 0.1 1 µA
VDS=100 V, VGS=0 V,
Tj=125 °C - 10 100
Gate-source leakage current IGSS VGS=20 V, VDS=0 V - 1 100 nA
Drain-source on-state resistance RDS(on) VGS=10 V, ID=100 A - 2.6 3 mW
VGS=6 V, ID=50 A - 3.1 4.8
Gate resistance RG- 1.9 - W
Transconductance gfs |VDS|>2|ID|RDS(on)max,
ID=100 A 94 188 - S
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Values
Rev. 2.1 page 2 2011-07-18
IPP030N10N3 G IPI030N10N3 G
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance Ciss - 11100 14800 pF
Output capacitance Coss - 1940 2580
Reverse transfer capacitance Crss - 69 -
Turn-on delay time td(on) - 34 - ns
Rise time tr- 58 -
Turn-off delay time td(off) - 84 -
Fall time tf- 28 -
Gate Charge Characteristics
4)
Gate to source charge Qgs - 49 - nC
Gate to drain charge Qgd - 28 -
Switching charge Qsw - 43 -
Gate charge total Qg- 155 206
Gate plateau voltage Vplateau - 4.4 - V
Output charge Qoss VDD=50 V, VGS=0 V - 205 273 nC
Reverse Diode
Diode continous forward current IS- - 100 A
Diode pulse current IS,pulse - - 400
Diode forward voltage VSD VGS=0 V, IF=100 A,
Tj=25 °C - 1 1.2 V
Reverse recovery time trr - 86 - ns
Reverse recovery charge Qrr - 232 - nC
4)
See figure 16 for gate charge parameter definition
VR=50 V, IF=IS,
diF/dt=100 A/µs
TC=25 °C
Values
VGS=0 V, VDS=50 V,
f=1 MHz
VDD=50 V, VGS=10 V,
ID=100 A, RG=1.6 W
VDD=50 V, ID=100 A,
VGS=0 to 10 V
Rev. 2.1 page 3 2011-07-18
IPP030N10N3 G IPI030N10N3 G
1 Power dissipation 2 Drain current
Ptot=f(TC)ID=f(TC); VGS≥10 V
3 Safe operating area 4 Max. transient thermal impedance
ID=f(VDS); TC=25 °C; D=0 ZthJC=f(tp)
parameter: tpparameter: D=tp/T
1 µs
10 µs
100 µs
1 ms
10 ms
DC
10-1 100101102103
10-1
100
101
102
103
ID[A]
VDS [V]
limited by on-state
resistance
singlepulse
0.01
0.02
0.05
0.1
0.2
0.5
10-5 10-4 10-3 10-2 10-1 100
10-2
10-1
100
ZthJC [K/W]
tp[s]
0
50
100
150
200
250
300
350
0 50 100 150 200
Ptot [W]
TC[°C]
0
20
40
60
80
100
120
0 50 100 150 200
ID[A]
TC[°C]
Rev. 2.1 page 4 2011-07-18
IPP030N10N3 G IPI030N10N3 G
5 Typ. output characteristics 6 Typ. drain-source on resistance
ID=f(VDS); Tj=25 °C RDS(on)=f(ID); Tj=25 °C
parameter: VGS parameter: VGS
7 Typ. transfer characteristics 8 Typ. forward transconductance
ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C
parameter: Tj
4.5 V
5 V
6 V
7.5 V 10 V
0
1
2
3
4
5
6
0 40 80 120 160
RDS(on) [mW]
ID[A]
25 °C
175 °C
0
50
100
150
200
250
300
0 2 4 6
ID[A]
VGS [V]
0
40
80
120
160
200
240
0 40 80 120 160
gfs [S]
ID[A]
4.5 V
5 V
5.5 V
6 V
7.5 V
10 V
0
50
100
150
200
250
300
012
ID[A]
VDS [V]
Rev. 2.1 page 5 2011-07-18
IPP030N10N3 G IPI030N10N3 G
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
RDS(on)=f(Tj); ID=100 A; VGS=10 V VGS(th)=f(Tj); VGS=VDS
parameter: ID
11 Typ. capacitances 12 Forward characteristics of reverse diode
C=f(VDS); VGS=0 V; f=1 MHz IF=f(VSD)
parameter: Tj
typ
98 %
0
1
2
3
4
5
6
7
-60 -20 20 60 100 140 180
RDS(on) [mW]
Tj[°C]
275 µA
2750 µA
0
0.5
1
1.5
2
2.5
3
3.5
4
-60 -20 20 60 100 140 180
VGS(th) [V]
Tj[°C]
Ciss
Coss
Crss
101
102
103
104
105
0 20 40 60 80
C[pF]
VDS [V]
25 °C
175 °C 25 °C, 98%
175 °C, 98%
100
101
102
103
0 0.5 1 1.5 2
IF[A]
VSD [V]
Rev. 2.1 page 6 2011-07-18
IPP030N10N3 G IPI030N10N3 G
13 Avalanche characteristics 14 Typ. gate charge
IAS=f(tAV); RGS=25 WVGS=f(Qgate); ID=100 A pulsed
parameter: Tj(start) parameter: VDD
15 Drain-source breakdown voltage 16 Gate charge waveforms
VBR(DSS)=f(Tj); ID=1 mA
20 V
50 V
80 V
0
2
4
6
8
10
0 40 80 120 160
VGS [V]
Qgate [nC]
90
95
100
105
110
-60 -20 20 60 100 140 180
VBR(DSS) [V]
Tj[°C]
VGS
Qgate
Vgs(th)
Qg(th)
Qgs Qgd
Qsw
Qg
25 °C
100 °C
150 °C
1
10
100
1000
1 10 100 1000
IAS [A]
tAV [µs]
Rev. 2.1 page 7 2011-07-18
IPP030N10N3 G IPI030N10N3 G
PG-TO220-3: Outline
Rev. 2.1 page 8 2011-07-18
IPP030N10N3 G IPI030N10N3 G
PG-TO262-3
Rev. 2.1 page 9 2011-07-18
IPP030N10N3 G IPI030N10N3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
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conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
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including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
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Rev. 2.1 page 10 2011-07-18
