PE42020
Product Specification
UltraCMOS® True DC RF Switch, 0 Hz–8000 MHz
©2014, Peregrine Semiconductor Corporation. All rights reserved. • Headquarters: 9380 Carroll Park Drive, San Diego, CA, 92121
Product Specification DOC-23814-3 – (12/2014)
www.psemi.com
Features
• High power handling
▪30 dBm @ DC
▪36 dBm @ 8 GHz
• Maximum voltage (DC or AC peak): ±10V on the
RF ports
• Total harmonic distortion (THD): –84 dBc
• Configurable 50Ω absorptive or open reflective
switch via a single pin (LZ)
• Packaging – 20-lead 4 × 4 mm QFN
Applications
• Test and measurement
▪Signal sources
▪Communication testers
▪Spectrum analyzers
▪Network analyzers
• Automated test equipment
▪Complex combination of DC + RF/analog and
digital signals
Product Description
The PE42020 is a HaRP™ technology-enhanced SPDT True DC RF switch that operates from zero Hertz up to
8 GHz with integrated RF, analog and digital functions. The PE42020 can accommodate up to ±10V input DC
voltage on the RF ports. It can be configured as a 50Ω absorptive or an open reflective True DC switch via the
single LZ pin. The PE42020 True DC RF switch delivers excellent RF performance and high power handling
down to zero Hertz, making this device ideal for handling the complex combination of DC, RF/analog and digital
signals in test and measurement (T&M) and automated test equipment (ATE) applications.
The PE42020 is manufactured on Peregrine’s UltraCMOS® process, a patented variation of silicon-on-insulator
(SOI) technology on a sapphire substrate.
Peregrine’s HaRP™ technology enhancements deliver high linearity and excellent harmonics performance. It is
an innovative feature of the UltraCMOS process, offering the performance of GaAs with the economy and
integration of conventional CMOS.
Figure 1 • PE42020 Functional Diagram
RFC
50Ω 50Ω
CMOS Control Driver and ESD
DC Tracking
RF2RF1
LS
LZ CTRL VSS
VDD
PE42020
UltraCMOS® True DC RF Switch
Page 2 DOC-23814-3 – (12/2014)
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Absolute Maximum Ratings
Exceeding absolute maximum ratings listed in Table 1 may cause permanent damage. Operation should be
restricted to the limits in Table 2. Operation between operating range maximum and absolute maximum for
extended periods may reduce reliability.
ESD Precautions
When handling this UltraCMOS device, observe the same precautions as with any other ESD-sensitive devices.
Although this device contains circuitry to protect it from damage due to ESD, precautions should be taken to
avoid exceeding the rating specified in Table 1.
Latch-up Immunity
Unlike conventional CMOS devices, UltraCMOS devices are immune to latch-up.
Table 1 • Absolute Maximum Ratings for PE42020
Parameter/Condition Min Max Unit
Positive supply voltage, VDD 10 17 V
Negative supply voltage, VSS –17 –10 V
Digital input voltage (CTRL, LS, LZ) –0.3 3.6 V
RF input power (RFC–RFX), 50Ω
0–40 MHz
≥40–8000 MHz
Fig. 2–Fig. 5
38
dBm
dBm
Storage temperature range –65 +150 °C
ESD voltage HBM, all pins(1) 1000 V
ESD voltage MM, all pins(2) 150 V
ESD voltage CDM, all pins(3) 1000 V
Notes:
1) Human body model (MIL-STD 883 Method 3015).
2) Machine model (JEDEC JESD22-A115).
3) Charged device model (JEDEC JESD22-C101).
PE42020
UltraCMOS® True DC RF Switch
DOC-23814-3 – (12/2014) Page 3
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Recommended Operating Conditions
Table 2 list the recommending operating condition for PE42020. Devices should not be operated outside the
recommended operating conditions listed below.
Table 2 • Recommended Operating Conditions for PE42020
Parameter Min Typ Max Unit
Positive supply voltage, VDD(1) 11 15 V
Negative supply voltage, VSS(1) –15 –11 V
Positive supply current, IDD 3.9 mA
Negative supply current, ISS –3.8 mA
Digital input high (CTRL, LS, LZ) 1.17 3.6 V
Digital input low (CTRL, LS, LZ) –0.3 0.6 V
RF input power, CW (RFC–RFX)(2) Fig. 2–Fig. 5 dBm
RF input power, pulsed (RFC–RFX)(3) Fig. 2–Fig. 5 dBm
RF input power into terminated ports, CW (RFX)(2) Fig. 6 dBm
Max DC bias voltage at RF ports
VDD = +11V, VSS = –11V, ≥ 0 °C
VDD = +15V, VSS = –15V, ≥ 0 °C
–7
–10
+7
+10
V
V
Max voltage
0–2 MHz (VDD = +11V, VSS = –11V, ≥ 0 °C)
0–2 MHz (VDD = +15V, VSS = –15V, ≥ 0 °C)
2–8000 MHz
–7
–10
Fig. 2–Fig. 5
+7
+10
Fig. 2–Fig. 5
V
V
V
DC current through RF active ports 80 mA
Operating temperature range –40 +25 +85 °C
Notes:
1) To maintain proper operation of the PE42020, a mismatch between VDD and VSS should not exceed a maximum of 8%. A large mismatch will
result in distortion appearing at the RF output at low frequencies. For example, VDD = +13.85V, VSS = –15V represents an 8% mismatch.
|13.85-15| / (13.85+15) / 2*100 = 8%.
2) 100% duty cycle, all bands 50Ω.
3) Pulsed, 5% duty cycle of 4620 μs period, 50Ω.
PE42020
UltraCMOS® True DC RF Switch
Page 4 DOC-23814-3 – (12/2014)
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Electrical Specifications
Table 3 provides the PE42020 key electrical specifications @ 25 °C, VDD = +15V, VSS = –15V, LZ = 0
(absorptive), 0 VDC at RF ports (ZS = ZL = 50Ω), unless otherwise specified.
Table 3 • PE42020 Electrical Specifications(1)
Parameter Path Condition Min Typ Max Unit
Operating frequency 0 Hz 8 GHz As
shown
Insertion loss RFC–RFX
0 Hz
0–3 GHz
3–6 GHz
6–8 GHz
0.60
0.85
1.00
1.10
0.70
1.00
1.30
1.35
dB
dB
dB
dB
Isolation
RFX–RFX
0–3 GHz
3–6 GHz
6–8 GHz
52
38
30
56
42
34
dB
dB
dB
RFC–RFX
0–3 GHz
3–6 GHz
6–8 GHz
46
35
31
48
37
34
dB
dB
dB
Return loss
(active and RFC ports) RFC–RFX
0–3 GHz
3–6 GHz
6–8 GHz
20
18
15
dB
dB
dB
Return loss
(terminated port) RFX
0–3 GHz
3–6 GHz
6–8 GHz
23
17
16
dB
dB
dB
Total harmonic distortion 1 kHz (2.5 VPP into 300Ω load) –84 dBc
Input 0.1dB compression
point(2) RFC–RFX 40 MHz–8 GHz 38 dBm
Input IP2 RFC–RFX
836 MHz, 1900 MHz
2.7 GHz
4.8 GHz
115
105
90
dBm
dBm
dBm
Input IP3 RFC–RFX
836 MHz, 1900 MHz
2.7 GHz
4.8 GHz
62
61
55
dBm
dBm
dBm
Settling time 50% CTRL to 0.05 dB final value 35 45 μs
Switching time 50% CTRL to 90% or 10% RF 10 14 μs
Notes:
1) Device is linear down to 0 Hz.
2) The input 0.1dB compression point is a linearity figure of merit. Refer to Table 2 for the RF input power (50Ω).
PE42020
UltraCMOS® True DC RF Switch
DOC-23814-3 – (12/2014) Page 5
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Table 4 provides the PE42020 key electrical specifications @ 25 °C, VDD = +15V, VSS = –15V, LZ = 1 (open
reflective), 0 VDC at RF ports (ZS = ZL = 50Ω), unless otherwise specified.
Table 4 • PE42020 Electrical Specifications(1)
Parameter Path Condition Min Typ Max Unit
Operating frequency 0 Hz 8 GHz As
shown
Insertion loss RFC–RFX
0 Hz
0–3 GHz
3–6 GHz
6–8 GHz
0.60
0.85
1.00
1.10
0.75
1.00
1.25
1.35
dB
dB
dB
dB
Isolation
RFX–RFX
0–3 GHz
3–6 GHz
6–8 GHz
35
29
25
37
31
27
dB
dB
dB
RFC–RFX
0–3 GHz
3–6 GHz
6–8 GHz
34
27
21
36
29
24
dB
dB
dB
Return loss
(active and RFC ports) RFC–RFX
0–3 GHz
3–6 GHz
6–8 GHz
20
19
15
dB
dB
dB
Total harmonic distortion 1 kHz (2.5 VPP into 300Ω load) –84 dBc
Input 0.1dB compression
point(2) RFC–RFX 40 MHz–8 GHz 38 dBm
Input IP2 RFC–RFX
836 MHz, 1900 MHz
2.7 MHz
4.8 MHz
115
105
90
dBm
dBm
dBm
Input IP3 RFC–RFX
836 MHz, 1900 MHz
2.7 MHz
4.8 MHz
62
61
55
dBm
dBm
dBm
Settling time 50% CTRL to 0.05 dB final value 35 45 μs
Switching time 50% CTRL to 90% or 10% RF 10 14 μs
Notes:
1) Device is linear down to 0 Hz.
2) The input 0.1dB compression point is a linearity figure of merit. Refer to Table 2 for the RF input power (50Ω).
PE42020
UltraCMOS® True DC RF Switch
Page 6 DOC-23814-3 – (12/2014)
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Hot-switching Capability
The maximum hot switching capability of the PE42020
is 27 dBm at VDD = +15V and VSS = –15V; 24 dBm at
VDD = +11V and VSS = –11V. Hot switching occurs
when RF power is applied while switching between
RF ports.
Control Logic
Table 5 provides the control logic truth table for the
PE42020.
Table 5 • Control Logic Truth Table for PE42020
LS CTRL LZ(*) RFC–RF1 RFC–RF2 Off Port
Terminated
0 0 0 OFF ON Yes
0 0 1 OFF ON No (High–Z)
0 1 0 ON OFF Yes
0 1 1 ON OFF No (High–Z)
1 0 0 ON OFF Yes
1 0 1 ON OFF No (High–Z)
1 1 0 OFF ON Yes
1 1 1 OFF ON No (High–Z)
Note: * If LZ is pulled high, the part is configured as an open reflective switch.
PE42020
UltraCMOS® True DC RF Switch
DOC-23814-3 – (12/2014) Page 7
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Figure 2 • Power De-rating Curve for 0 Hz–8 GHz, VDD = +15V, VSS = –15V, 0 VDC,–40 to 0 °C, 50Ω
26
27
28
29
30
31
32
33
34
35
36
37
38
0 1 10 100 1000 10000
Input Power (dBm)
Frequency (MHz)
Max. RF Input Power, Pulsed (≥ 40 MHz, -40°C to 0°C Ambient, VDD = +15V, VSS = -15V)
Max. RF Input Power, CW (≥ 40 MHz, -40°C to 0°C Ambient, VDD = +15V, VSS = -15V)
Max. RF Input Power, CW & Pulsed (< 40 MHz, -40°C to 0°C Ambient, VDD = +15V, VSS = -15V)
Figure 3 • Power De-rating Curve for 0 Hz–8 GHz, VDD = +15V, VSS = –15V, 0 VDC, 0–85 °C, 50Ω
26
27
28
29
30
31
32
33
34
35
36
37
38
0 1 10 100 1000 10000
Input Power (dBm)
Frequency (MHz)
Max. RF Input Power, Pulsed (≥ 20 MHz, 0°C to +85°C Ambient, VDD = +15V, VSS = -15V)
Max. RF Input Power, CW (≥ 20 MHz, 0°C to +85°C Ambient, VDD = +15V, VSS = -15V)
Max. RF Input Power, CW & Pulsed (< 20 MHz, 0°C to +85°C Ambient, VDD = +15V, VSS = -15V)
PE42020
UltraCMOS® True DC RF Switch
Page 8 DOC-23814-3 – (12/2014)
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Figure 4 • Power De-rating Curve for 0 Hz–8 GHz, VDD = +11V, VSS = –11V, 0 VDC, –40 to 0 °C, 50Ω
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
0 1 10 100 1000 10000
Input Power (dBm)
Frequency (MHz)
Max. RF Input Power, Pulsed (≥ 40 MHz, -40°C to 0°C Ambient, VDD = +11V, VSS = -11V)
Max. RF Input Power, CW (≥ 40 MHz, -40°C to 0°C Ambient, VDD = +11V, VSS = -11V)
Max. RF Input Power, CW & Pulsed (< 40 MHz, -40°C to 0°C Ambient, VDD = +11V, VSS = -11V)
Figure 5 • Power De-rating Curve for 0 Hz–8 GHz, VDD = +11V, VSS = –11V, 0 VDC, 0–85 °C, 50Ω
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
0 1 10 100 1000 10000
Input Power (dBm)
Frequency (MHz)
Max. RF Input Power, Pulsed (≥ 30 MHz, 0°C to +85°C Ambient, VDD = +11V, VSS = -11V)
Max. RF Input Power, CW (≥ 30 MHz, 0°C to +85°C Ambient, VDD = +11V, VSS = -11V)
Max. RF Input Power, CW & Pulsed (< 30 MHz, 0°C to +85°C Ambient, VDD = +11V, VSS = -11V)
PE42020
UltraCMOS® True DC RF Switch
Page 10 DOC-23814-3 – (12/2014)
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Performance Data
Figure 7–Figure 28 show the performance data at 25 °C, VDD = +15V, VSS = –15V, 0 VDC, (ZS = ZL = 50Ω),
unless otherwise specified.
Figure 7 • Insertion Loss vs Temperature (RFC–RFX), LZ = 0
-5
-4
-3
-2
-1
0
012345678
Insertion Loss (dB)
Frequency (GHz)
-40°C 25°C 85°C
Figure 8 • Insertion Loss vs Temperature (RFC–RFX), LZ = 1
-5
-4
-3
-2
-1
0
012345678
Insertion Loss (dB)
Frequency (GHz)
-40°C 25°C 85°C
PE42020
UltraCMOS® True DC RF Switch
DOC-23814-3 – (12/2014) Page 11
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Figure 9 • Insertion Loss vs VDD/VSS (RFC–RFX), LZ = 0
-5
-4
-3
-2
-1
0
012345678
Insertion Loss (dB)
Frequency (GHz)
+11V/–11V +13.5V/–13.5V +15V/–15V
Figure 10 • Insertion Loss vs VDD/VSS (RFC–RFX), LZ = 1
-5
-4
-3
-2
-1
0
012345678
Insertion Loss (dB)
Frequency (GHz)
+11V/–11V +13.5V/–13.5V +15V/–15V
PE42020
UltraCMOS® True DC RF Switch
Page 12 DOC-23814-3 – (12/2014)
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Figure 11 • RFC Port Return Loss vs Temperature, LZ = 0
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
012345678
Return Loss (dB)
Frequency (GHz)
-40°C 25°C 85°C
Figure 12 • RFC Port Return Loss vs Temperature, LZ = 1
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
012345678
Return Loss (dB)
Frequency (GHz)
-40°C 25°C 85°C
PE42020
UltraCMOS® True DC RF Switch
DOC-23814-3 – (12/2014) Page 13
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Figure 13 • RFC Port Return Loss vs VDD/VSS, LZ = 0
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
012345678
Return Loss (dB)
Frequency (GHz)
+11V/–11V +13.5V/–13.5V +15V/–15V
Figure 14 • RFC Port Return Loss vs VDD/VSS, LZ = 1
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
012345678
Return Loss (dB)
Frequency (GHz)
+11V/–11V +13.5V/–13.5V +15V/–15V
PE42020
UltraCMOS® True DC RF Switch
Page 14 DOC-23814-3 – (12/2014)
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Figure 15 • Active Port Return Loss vs Temperature, LZ = 0
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
012345678
Return Loss (dB)
Frequency (GHz)
-40°C 25°C 85°C
Figure 16 • Active Port Return Loss vs Temperature, LZ = 1
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
012345678
Return Loss (dB)
Frequency (GHz)
-40°C 25°C 85°C
PE42020
UltraCMOS® True DC RF Switch
DOC-23814-3 – (12/2014) Page 15
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Figure 17 • Active Port Return Loss vs VDD/VSS, LZ = 0
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
012345678
Return Loss (dB)
Frequency (GHz)
+11V/–11V +13.5V/–13.5V +15V/–15V
Figure 18 • Active Port Return Loss vs VDD/VSS, LZ = 1
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
012345678
Return Loss (dB)
Frequency (GHz)
+11V/–11V +13.5V/–13.5V +15V/–15V
PE42020
UltraCMOS® True DC RF Switch
Page 16 DOC-23814-3 – (12/2014)
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Figure 19 • Terminated Port Return Loss vs Temperature, LZ = 0
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
012345678
Return Loss (dB)
Frequency (GHz)
-40°C 25°C 85°C
Figure 20 • Terminated Port Return Loss vs VDD/VSS, LZ = 0
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
012345678
Return Loss (dB)
Frequency (GHz)
+11V/–11V +13.5V/–13.5V +15V/–15V
PE42020
UltraCMOS® True DC RF Switch
DOC-23814-3 – (12/2014) Page 17
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Figure 21 • Isolation vs Temperature (RFX–RFX), LZ = 0
-120
-100
-80
-60
-40
-20
0
012345678
Isolation (dB)
Frequency (GHz)
-40°C 25°C 85°C
Figure 22 • Isolation vs Temperature (RFX–RFX), LZ = 1
-120
-100
-80
-60
-40
-20
0
012345678
Isolation (dB)
Frequency (GHz)
-40°C 25°C 85°C
PE42020
UltraCMOS® True DC RF Switch
Page 18 DOC-23814-3 – (12/2014)
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Figure 23 • Isolation vs VDD/VSS (RFX–RFX), LZ = 0
-120
-100
-80
-60
-40
-20
0
012345678
Isolation (dB)
Frequency (GHz)
+11V/–11V +13.5V/–13.5V +15V/–15V
Figure 24 • Isolation vs VDD/VSS (RFX–RFX), LZ = 1
-120
-100
-80
-60
-40
-20
0
012345678
Isolation (dB)
Frequency (GHz)
+11V/–11V +13.5V/–13.5V +15V/–15V
PE42020
UltraCMOS® True DC RF Switch
DOC-23814-3 – (12/2014) Page 19
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Figure 25 • Isolation vs Temperature (RFC–RFX), LZ = 0
-120
-100
-80
-60
-40
-20
0
012345678
Isolation (dB)
Frequency (GHz)
-40°C 25°C 85°C
Figure 26 • Isolation vs Temperature (RFC–RFX), LZ = 1
-120
-100
-80
-60
-40
-20
0
012345678
Isolation (dB)
Frequency (GHz)
-40°C 25°C 85°C
PE42020
UltraCMOS® True DC RF Switch
Page 20 DOC-23814-3 – (12/2014)
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Figure 27 • Isolation vs VDD/VSS (RFC–RFX), LZ = 0
Figure 28 • Isolation vs VDD/VSS (RFC–RFX), LZ = 1
-120
-100
-80
-60
-40
-20
0
012345678
Isolation (dB)
Frequency (GHz)
+11V/–11V +13.5V/–13.5V +15V/–15V
-120
-100
-80
-60
-40
-20
0
012345678
Isolation (dB)
Frequency (GHz)
+11V/–11V +13.5V/–13.5V +15V/–15V
PE42020
UltraCMOS® True DC RF Switch
DOC-23814-3 – (12/2014) Page 21
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Evaluation Kit
The SPDT switch evaluation board was designed to ease customer evaluation of Peregrine's PE42020. The RF
common port is connected through a 50Ω transmission line via the SMA connector, J3. RF1 and RF2 ports are
connected through 50Ω transmission lines via SMA connectors J1 and J2 respectively. A 50Ω through trans-
mission line is available via SMA connectors J5 and J6, which can be used to de-embed the loss of the PCB. J4
provides DC and digital inputs to the device.
The board is constructed of a four metal layer material with a total thickness of 62 mils. The top RF layer is
Rogers 4350B material with a thickness of 6.6 mils and the Ɛr = 3.66. The middle layers provide ground for the
transmission lines. The transmission lines were designed using a coplanar waveguide with ground plane model
using a trace width of 13 mils, trace gaps of 10.5 mils and metal thickness of 3.4 mils.
For the true performance of the PE42020 to be realized, the PCB must be designed in such a way that RF trans-
mission lines and sensitive DC I/O traces are well isolated from one another.
Figure 29 • Evaluation Kit Layout for PE42020
PE42020
UltraCMOS® True DC RF Switch
Page 22 DOC-23814-3 – (12/2014)
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Pin Information
This section provides pinout information for the
PE42020. Figure 30 shows the pin map of this device
for the available package. Table 6 provides a
description for each pin.
Figure 30 • Pin Configuration (Top View)
Exposed
Ground Pad
GND
GND
GND
RF1
GND
GND
GND
GND
RF2
GND
VDD
LS
CTRL
LZ
VSS
GND
GND
RFC
GND
GND
1
3
2
4
5
15
13
14
12
11
6
7
8
9
10
20
19
18
17
16
Pin 1 Dot
Marking
Table 6 • Pin Descriptions for PE42020
Pin No. Pin
Name Description
1–3, 5–7,
9–11, 13–
15
GND(*) Ground.
4 RF1 RF port 1.
8 RFC RF common.
12 RF2 RF port 2.
16 VSS Negative supply voltage.
17 LZ High impedence mode.
18 CTRL Digital control logic input for selecting
ON path (see Table 5).
19 LS
Logic Select–used to determine the
definition for the CTRL pin (see
Table 5).
20 VDD Positive supply voltage.
Pad GND Exposed pad: ground for proper oper-
ation.
Note: * Ground connection. traces should be physically short and con-
nected to the ground plane. This pin is connected to the exposed solder
pad that also must be soldered to the ground plane for best perfor-
mance.
PE42020
UltraCMOS® True DC RF Switch
DOC-23814-3 – (12/2014) Page 23
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Packaging Information
This section provides packaging data including the moisture sensitivity level, package drawing, package
marking and tape-and-reel information.
Moisture Sensitivity Level
The moisture sensitivity level rating for the PE42020 in the 20-lead 4 × 4 mm QFN package is MSL3.
Package Drawing
Top-Marking Specification
Figure 31 • Package Mechanical Drawing for 20-lead 4 × 4 × 0.85 mm QFN
Figure 32 • Package Marking Specifications for PE42020
TOP VIEW BOTTOM VIEW
SIDE VIEW
4.00
4.00
0.85±0.05
Pin #1 Corner
RECOMMENDED LAND PATTERN
0.50
2.15±0.05
0.55±0.05
(x20)
2.15±0.05
0.18
0.435 SQ
REF
0.28
(x20)
0.75
(x20)
0.50
4.40
4.40
2.20
2.20
A
0.10 C
(2X)
C
0.10 C
0.05 C
SEATING PLANE
B
0.10 C
(2X)
0.10 CA B
0.05 C
ALL FEATURES
0.05
0.203
0.23±0.05
(x20)
2.00
0.18
1
5
6
10
11 15
16
20
=
YY =
WW =
ZZZZZZ =
Pin 1 indicator
Last two digits of assembly year
Assembly work week
Assembly lot code (maximum six characters)
42020
YYWW
ZZZZZZ
PE42020
UltraCMOS® True DC RF Switch
Page 24 DOC-23814-3 – (12/2014)
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Tape and Reel Specification
Figure 33 • Tape and Reel Specifications for 20-lead 4 × 4 × 0.85 mm QFN
Device Orientation in Tape
Pin 1
T
K0 A0
B0
P0
P1
D1
A
Section A-A
A
Direction of Feed
D0
E
W0
P2
see note 3
see
note 1
F
see note 3
A0
B0
K0
D0
D1
E
F
P0
P1
P2
T
W0
4.35
4.35
1.10
1.50 + 0.10/ -0.00
1.50 min
1.75 ± 0.10
5.50 ± 0.05
4.00
8.00
2.00 ± 0.05
0.30 ± 0.05
12.00 ± 0.30
Notes:
1. 10 Sprocket hole pitch cumulative tolerance ±0.2
2. Camber in compliance with EIA 481
3. Pocket position relative to sprocket hole measured
as true position of pocket, not pocket hole
Dimensions are in millimeters unless otherwise specified
PE42020 UltraCMOS® True DC RF Switch
Product Specification www.psemi.com DOC-23814-3 – (12/2014)
Document Categories
Advance Information
The product is in a formative or design stage. The datasheet contains
design target specifications for product development. Specifications
and features may change in any manner without notice.
Preliminary Specification
The datasheet contains preliminary data. Additional data may be added
at a later date. Peregrine reserves the right to change specifications at
any time without notice in order to supply the best possible product.
Product Specification
The datasheet contains final data. In the event Peregrine decides to
change the specifications, Peregrine will notify customers of the
intended changes by issuing a CNF (Customer Notification Form).
Not Recommended for New Designs (NRND)
This product is in production but is not recommended for new designs.
End of Life (EOL)
This product is currently going through the EOL process. It has a
specific last-time buy date.
Obsolete
This product is discontinued. Orders are no longer accepted for this
product.
Sales Contact
For additional information, contact Sales at sales@psemi.com.
Disclaimers
The information in this datasheet is believed to be reliable. However, Peregrine assumes no liability for the use of this information. Use shall be
entirely at the user’s own risk. No patent rights or licenses to any circuits described in this datasheet are implied or granted to any third party.
Peregrine’s products are not designed or intended for use in devices or systems intended for surgical implant, or in other applications intended to
support or sustain life, or in any application in which the failure of the Peregrine product could create a situation in which personal injury or death
might occur. Peregrine assumes no liability for damages, including consequential or incidental damages, arising out of the use of its products in
such applications.
Patent Statement
Peregrine products are protected under one or more of the following U.S. patents: patents.psemi.com
Copyright and Trademark
©2014, Peregrine Semiconductor Corporation. All rights reserved. The Peregrine name, logo, UTSi and UltraCMOS are registered trademarks and
HaRP, MultiSwitch and DuNE are trademarks of Peregrine Semiconductor Corp.
Ordering Information
Table 7 lists the available ordering codes for the PE42020 as well as the available shipping methods.
Table 7 • Order Codes for PE42020
Order Codes Description Packaging Shipping Method
PE42020A-X PE42020 SPDT True DC RF Switch Green 20-lead 4 × 4 mm QFN 500 units / T&R
EK42020-02 PE42020 Evaluation kit Evaluation kit 1 / Box
