Philips Semiconductors Product specification Schottky barrier (double) diodes BATS54W series FEATURES PINNING e Low forward voltage BAT54 e Guard ring protected PIN w | aw | cw! sw 3 e Very small SMD package. 1 a Kj a ay 2 n.c. ke ag ko ' Ceeb)- 2 APPLICATIONS 3 k | ay. ao | ky, Kp | ky, ap wcaeo * Ultra high-speed switching Voltage clamping _ Fig.3 BATS54AW diode * Protection circuits ita configuration (symbol). * Blocking diodes. DESCRIPTION 3 Planar Schottky barrier diodes vl encapsulated in a SOT323 very small |! 2 1 -Coilse). 2 plastic SMD package. Single diodes Top view Macaro and double diodes with different Micas9 pinning are available. Fig.1 Simplified outline (SOT323) and pin Fig.4 BAT54CW diode MARKING configuration. configuration (symbol). MARKING TYPE NUMBER CODE BAT54W L4 3 3 BAT54AW 42 BATS4CW 43 1 6 2 1 2 BAT54SW 44 css? ncase Fig.2 BAT54W single diode Fig.5 BAT54SW diode configuration (symbol). configuration (symbol). 1996 Mar 19 2-45Philips Semiconductors Product specification Schottky barrier (double) diodes BAT54W series LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS | min. | MAX. | UNIT Per diode Va continuous reverse voltage - 30 Vv lp continuous forward current - 200 mA leRM repetitive peak forward current ps1s;8s0.5 - 300 mA lesm non-repetitive peak forward current tp < 10 ms - 600 mA Prot total power dissipation (per package) | Tamp 25 C - 200 mw Tstg storage temperature -65 +150 [C Tj junction temperature - 125 C Tamb operating ambient temperature -65 +125 | C ELECTRICAL CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MAX. UNIT Per diode Ve forward voltage see Fig.5 le = 0.1 MA 240 mV lp= 1mA 320 mv Ip=10mA 400 mV ip = 30 mA 500 mV le = 100 mA 800 mV Ip reverse current Vr = 25 V; note 1; see Fig.6 2 pA ter reverse recovery time when switched from Ip = 10 mA to 5 ns In = 10 MA; R, = 1009; measured at In = 1 MA: see Fig.9 Cy diode capacitance f= 1 MHz; Vp =1 V; see Fig.8 10 pF Note 1. Pulsed test: tp = 300 ps; 5 = 0.02. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rin j-a thermal resistance from junction to ambient | note 1 625 KW Note 1. Refer to SOT323 standard mounting conditions. 1996 Mar 19 2-46Philips Semiconductors Schottky barrier (double) diodes Product specification BAT54W series GRAPHICAL DATA 103 (mA) 107 107 0.4 08 12 , Se vem * (1) Tamp = 125 C. (2) Temp = 85C. (3) Temp = 25 C. Fig.5 Forward current as a function of forward voltage; typical values. 103 (HA) 102 10-1 30 VR (VY) (1) Tamp = 125 C. (2) Tam = 85C. (8) Tam = 25 C. Fig.6 Reverse current as a function of reverse voltage; typical values. 15 Cq (pF) 9 10 20 Va f= 1 MHZ; Tame = 25 C. Fig.8 Diode capacitance as a function of reverse voltage; typical values. ir ate dt Yn 10% t Qy ~-4t-_._-3 90% Iq tr _ MAC129 1 Fig.9 Reverse recovery definitions. 1996 Mar 19