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Transistor
Absolute Maximum Ratings:
Collector-Emitter Voltage, Vceo : 50V
Collector-Base Voltage, Vcbo : 75V
Emitter-Base Voltage, Vebo : 5V
Continuous Collector Current, Ic : 2A
Base Current, Ib : 1A
Total Power Dissipation (Tc = +25ºC), Pd : 10W
Derate Above 25°C : 0.057nw/°C
Operating Junction Temperature, Tj : -65ºC to 200ºC
Storage Temperature Range, Tstg : -65ºC to 200ºC
Thermal Resistance, Junction -to-Case, Rthjc : 17.5ºC/W
Electrical Characteristics: (Ta = +25ºC Unless otherwise specied):
Parameter Symbol Test Conditions Min Max Unit
OFF Characteristics
Collector-Emitter Breakdown Voltage V(br)ceo Ic = 100mA, Ib = 0 (Note1) 50 - V
Collector Cutoff Current Icex
Vce = 75V, Vbe = 1.5V - 0.1 mA
Vce = 45V, Vbe = 1.5V, Tc = +150°C - 5 mA
Emitter Cutoff Current Iebo Vbe = 5V, Ic = 0 - 0.1 mA
ON Characteristics (Note 1)
DC Current Gain hfe Ic = 500mA, Vce = 4V 40 250 -
Collector-Emitter Saturation Voltage Vce(sat)Ic = 500mA, Ib = 50mA - 1.2 V
Base-Emitter ON Voltage Vbe(on)Ic = 500mA, Vce = 4V - 1.4 V
Small-Signal Characteristics
Small-Signal Current Gain hfe Ic = 50mA, Vce = 4V, f = 10MHz 5.0 - -
Switching Characteristics
Turn-On Time ton Vcc = 30V, Ic = 500mA, Ib1 = 50mA - 100 ns
Turn-Off Time toff Vcc = 30V, Ic = 500mA, Ib2 = 50mA - 1,000 ns
Notes: 1. Pulse Test: Pulse Width <
=
300µs, Duty Cycle <
=
2%.
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Transistor
Important Notice : This data sheet and its contents (the “Information”) belong to the members of the Premier Farnell group of companies (the “Group”) or are licensed to it. No licence is granted
for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change
without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any
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Multicomp is the registered trademark of the Group. © Premier Farnell plc 2012.
Part Number Table
Description Part Number
Transistor, Silicon, TO-39, PNP,
General Purpose 2N5323
Dimensions A B C D E F G H J K L
Min. 8.5 7.74 6.09 0.4 - 2.41 4.82 0.71 0.73 12.7 45º
Max. 9.39 8.5 6.6 0.53 0.88 2.66 5.33 0.86 1.02 - 48º
Dimensions : Millimetres
