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DS30429 Rev. 2 - 2 1 of 4 DCX (LO-R1) H
www.diodes.com ã Diodes Incorporated
·Epitaxial Planar Die Construction
·Built-In Biasing Resistors
·Lead Free By Design/RoHS Compliant (Note 3)
Features
Maximum Ratings NPN Section @ TA= 25°C unless otherwise specified
A
M
L
BC
H
K
G
D
CXXYM
Mechanical Data
·Case: SOT-563
·Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
·Moisture sensitivity: Level 1 per J-STD-020C
·Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
·Terminal Connections: See Diagram
·Weight: 0.005 grams (approx.)
TCUDORPWEN
R1
R1
R2
R2R1
R1
R1, R2R1 Only
DCX (LO-R1) H
COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL
SOT-563 DUAL SURFACE MOUNT TRANSISTOR
SOT-563
Dim Min Max Typ
A0.15 0.30 0.25
B1.10 1.25 1.20
C1.55 1.70 1.60
D0.50
G0.90 1.10 1.00
H1.50 1.70 1.60
K0.56 0.60 0.60
L0.15 0.25 0.20
M0.10 0.18 0.11
All Dimensions in mm
SCHEMATIC DIAGRAM, TOP VIEW
P/N R1 (NOM) R2 (NOM) MARKING
DCX122LH
DCX142JH
DCX122TH
DCX142TH
0.22KW
0.47KW
0.22KW
0.47KW
10KW
10KW
OPEN
OPEN
C81
C82
C83
C84
Characteristic Symbol Value Unit
Supply Voltage VCC 50 V
Input Voltage DCX122LH
DCX142JH VIN -5 to +6
-5 to +6 V
Input Voltage DCX122TH
DCX142TH VEBO (MAX) 5V
Output Current All IC100 mA
Power Dissipation (Note 1, 2) Pd150 mW
Thermal Resistance, Junction to Ambient Air (Note 1) RqJA 833 °C/W
Operating and Storage and Temperature Range Tj,T
STG -55 to +150 °C
Note: 1. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.
2. NPN Section, PNP Section, or maximum combined.
3. No purposefully added lead.
SPICE MODELS: DCX122LH DCX142JH DCX122TH DCX142TH
DS30429 Rev. 2 - 2 2 of 4 DCX (LO-R1) H
www.diodes.com
Electrical Characteristics NPN Section R1, R2 Types
@ TA= 25°C unless otherwise specified
TCUDORPWEN
Maximum Ratings PNP Section @ TA= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Supply Voltage VCC -50 V
Input Voltage DCX122LH
DCX142JH VIN +5 to -6
+5 to -6 V
Input Voltage DCX122TH
DCX142TH VEBO (MAX) -5 V
Output Current All IC-100 mA
Power Dissipation (Note 1, 2) Pd150 mW
Thermal Resistance, Junction to Ambient Air (Note 1) RqJA 833 °C/W
Operating and Storage and Temperature Range Tj,T
STG -55 to +150 °C
Note: 1. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.
2. NPN Section, PNP Section, or maximum combined.
Characteristic Symbol Min Typ Max Unit Test Condition
Input Voltage
DCX122LH
DCX142JH Vl(off) 0.3
0.3 ¾¾VVCC = 5V, IO = 100mA
DCX122LH
DCX142JH Vl(on) ¾¾
2.0
2.0 VVO = 0.3V, IO = 20mA
VO = 0.3V, IO = 20mA
Output Voltage VO(on) ¾¾0.3V V IO/Il = 5mA/0.25mA
Input Current DCX122LH
DCX142JH Il¾¾
28
13 mA VI = 5V
Output Current IO(off) ¾¾0.5 mAVCC = 50V, VI = 0V
DC Current Gain DDCX122LH
DDCX142JH Gl56
56 ¾¾¾
VO = 5V, IO = 10mA
Gain-Bandwidth Product* fT¾200 ¾MHz VCE = 10V, IE = 5mA,
f = 100MHz
* Transistor - For Reference Only
Electrical Characteristics NPN Section R1-Only
@ TA= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BVCBO 50 ¾¾VIC = 50mA
Collector-Emitter Breakdown Voltage BVCEO 40 ¾¾VIC = 1mA
Emitter-Base Breakdown Voltage DCX122TH
DCX142TH BVEBO 5¾¾VIE = 50mA
IE = 50mA
Collector Cutoff Current ICBO ¾¾0.5 mAVCB = 50V
Emitter Cutoff Current DCX122TH
DCX142TH IEBO ¾
¾¾0.5
0.5 mAVEB = 4V
Collector-Emitter Saturation Voltage VCE(sat) ¾¾0.3 V IC = 5mA, IB = 0.25mA
DC Current Transfer Ratio DCX122TH
DCX142TH hFE 100
100
250
250
600
600 ¾IC = 1mA, VCE = 5V
Gain-Bandwidth Product* fT¾200 ¾MHz VCE = 10V, IE = -5mA,
f = 100MHz
* Transistor - For Reference Only
DS30429 Rev. 2 - 2 3 of 4 DCX (LO-R1) H
www.diodes.com
TCUDORPWEN
* Transistor - For Reference Only
Characteristic Symbol Min Typ Max Unit Test Condition
Input Voltage
DCX122LH
DCX142JH Vl(off) -0.3
-0.3 ¾¾VVCC = -5V, IO = -100mA
DCX122LH
DCX142JH Vl(on) ¾¾
-2.0
-2.0 VVO = -0.3V, IO = -20mA
VO = -0.3V, IO = -20mA
Output Voltage VO(on) ¾¾-0.3V V IO/Il = -5mA/-0.25mA
Input Current DCX122LH
DCX142JH Il¾¾
-28
-13 mA VI = -5V
Output Current IO(off) ¾¾-0.5 mAVCC = -50V, VI = 0V
DC Current Gain DCX122LH
DCX142JH Gl56
56 ¾¾¾
VO = -5V, IO = -10mA
Gain-Bandwidth Product* fT¾200 ¾MHz VCE = -10V, IE = -5mA,
f = 100MHz
Electrical Characteristics PNP Section R1, R2 Types
@ TA= 25°C unless otherwise specified
Electrical Characteristics R1-Only Types
@ TA= 25°C unless otherwise specified
* Transistor - For Reference Only
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BVCBO -50 ¾¾VIC = -50mA
Collector-Emitter Breakdown Voltage BVCEO -40 ¾¾VIC = -1mA
Emitter-Base Breakdown Voltage DCX122TH
DCX142TH BVEBO -5 ¾¾VIE = -50mA
IE = -50mA
Collector Cutoff Current ICBO ¾¾-0.5 mAVCB = -50V
Emitter Cutoff Current DCX122TH
DCX142TH IEBO ¾
¾¾-0.5
-0.5 mAVEB = -4V
Collector-Emitter Saturation Voltage VCE(sat) ¾¾-0.3 V IC = -5mA, IB = -0.25mA
DC Current Transfer Ratio DCX122TH
DCX142TH hFE 100
100
250
250
600
600 ¾IC = -1mA, VCE = -5V
Gain-Bandwidth Product* fT¾200 ¾MHz VCE = -10V, IE = 5mA,
f = 100MHz
Ordering Information (Note 4)
Device Packaging Shipping
DCX122LH-7 SOT-563 3000/Tape & Reel
DCX142JH-7 SOT-563 3000/Tape & Reel
DCX122TH-7 SOT-563 3000/Tape & Reel
DCX142TH-7 SOT-563 3000/Tape & Reel
Notes: 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
CXXYM
CXX = Product Type Marking Code (See Page 1)
YM = Date Code Marking
Y = Year ex: P = 2003
M = Month ex: 9 = September
Date Code Key
Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1234567
89 OND
Year 2002 2003 2004 2005 2006 2007 2008 2009
Code NPRST
UVW
DS30429 Rev. 2 - 2 4 of 4 DCX (LO-R1) H
www.diodes.com
TCUDORPWEN
-50 0 50 100 150
2
5
0
200
150
50
100
0
T , AMBIENT TEMPERATURE (°C)
A
Fi
g
. 1 Deratin
g
Curve - Total
P , POWER DISSIPATION (mW)
d
