T4-LDS-0292, Rev. 1 (121800) ©2013 Microsemi Corporation Page 1 of 7
1N6358 – 1N6372 or
MPT-10 – MPT-45C
Available 1500 Watt Low Clamping Factor
Transient Voltage Suppressor
Screening in
reference to
MIL-PRF-19500
available
DESCRIPTION
DO-13 (DO-202AA)
Package
This Transient Voltage Suppressor (TVS) series for 1N6358 through 1N6372 are JED EC registered
selections for both unidirectional and bidirectional devices. The 1N6358 through 1N6364 are
unidirectional and the 1N6366 through 1N6372 are bidirectional where they all provide a very low
specified clamping factor for minimal clamping voltages (VC) above their respective breakdown
voltages (VBR) as specified herein. They are most often used in protecting sensitive components
from inductive switching transients or induced secondary lightning effects as found in lower surge
levels of IEC61000-4-5. They are also very successful in protecting airborne avionics and electrical
systems. Since their response time is virtually instantaneous, they can also protect from ESD and
EFT per IEC61000-4-2 and IEC61000-4-4.
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
• Unidirectional and bidirectional TVS seri es in axial package for thru-hole mount ing.
• Suppresses t ransients up t o 1500 w atts @ 10/1000 µs (see figur e 1).
• tclamping (0 volts to V(BR) mi n ):
Unidirectional – Less than 100 picoseconds.
Bidirectional – Less than 5 nanosec onds.
• Working voltage (VWM) range 10 V to 45 V.
• Low clam ping factor (ratio of actual VC/VBR): 1. 33 @ full rated power and 1.20 @ 50% rated po w er.
• Hermetically sealed DO-13 metal package.
• Upsc reening in reference to MIL-PRF-19500 is avai lable.
• RoHS compliant versions available.
APPLICATIONS / BEN EFITS
• Designed to protect bipol ar and MOS microprocess or based s ystems
• Protection from swi tching transients and induced RF.
• Protection from ESD & EF T per IEC 61000-4-2 and IEC 61000-4-4.
• Second ary lightning prot ection per I EC 61000-4-5 with 42 ohms source impedance:
Class 1, 2 & 3: 1N6358 to 1N6372
Class 4: 1N6358 to 1N 6362 and 1N6366 to 1N 6370
• Second ary lightning prot ection per I EC 61000-4-5 with 12 ohms s ource impedance:
Class 1 & 2: 1N6358 to 1N6372
Class 3: 1N6358 to 1N6362 and 1N6366 to 1N6370
Class 4: 1N6358 and 1N6366
• Second ary lightning prot ection per I EC 61000-4-5 with 2 ohms s ource impedance:
Class 2: 1N6358 to 1N6361 and 1N6366 to 1N6369
Class 3: 1N6358 and 1N6366
• Inherently radi ation hard as des cri bed in Microsemi “Mic roNote 050”.
MAXIMUM RATINGS
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Paramet ers/T est Conditions
Symbol
Value
Unit
Junction and Storage Temperature
TJ and TSTG
-65 to +175
ºC
Thermal R esis tance, Junction to Lead @ 0.375 inch (10
mm) f rom body
R
ӨJL
50
ºC/W
Thermal R esis tance, Junction to Ambient (1)
R
ӨJA
110
ºC/W
Peak Pulse Power @ TL = +25 ºC (2)
PPP
1500
W
Rated Av erage Power Dissipation @ TL ≤ +125 ºC (3)
PM(AV)
1
W
Solder Temperat ure @ 10 s
TSP
260
oC
Notes: 1. When mounted on FR4 PC board with 4 mm2 copper pads (1 oz) and track width 1 mm, length 25 mm.
2. At 10/1000 µs with repeti tion rate of 0.01% or less (see figures 1, 2, & 4).
3. At 3/8 inch (10 mm) from body (see derati ng in figure 5). TVS devices are not typically used for dc
power dissipati on and are instead operated at or less than thei r rated standoff voltage (VWM) except for
transients that briefl y dri ve the device into avalanche breakdown (VBR to VC region).
T4-LDS-0292, Rev. 1 (121800) ©2013 Microsemi Corporation Page 2 of 7
1N6358 – 1N6372 or
MPT-10 – MPT-45C
MECHANICAL and PACKAGING
• CASE: DO-13 (DO-202AA), welded, hermetically sealed metal and glass.
• TERMINALS: All external metal surfaces are tin-lead plated or RoHS compliant annealed matte-tin plat ing solderable per MIL-
STD-750 method 2026.
• MARKING: Part number and polar it y diode symbol .
• POLARITY: Cathode connected to case and polarity indicated by diode symbol.
• TAPE & REEL option: Standard per EIA-296 (add “TR” suffix to part number). Consult factory for quan titi es.
• WEIGHT: Approximately 1.4 grams.
• See package dimensions on last page.
PART NOMENCLATURE
MQ 1N6358 (e3)
Reliability Level
MQ (reference JAN)
MX (reference JANTX)
MV (reference JANTXV)
CDS (reference JANS)
Blank = Commercial
RoHS Compliance
e3 = RoHS compliant
Blank = non-RoHS compliant
JEDEC type number
(See Electrical Characteristics
table)
SYMBOLS & DEFINITIONS
Symbol
Definition
V
WM
Standoff Voltage: Applied Reverse Voltage to assure a nonconductive condition.
V(BR)
Breakdown Voltage: This is the Breakdown Voltage the device will exhibit at 25 oC.
VC
Maximum Clamping Voltage: The maximum peak voltage appearing across the TVS when subjected to the peak pulse
current in a one millisecond time interval. The peak pulse voltage is the combination of voltage rise due to both the
series resistan ce and thermal rise and positive temp er atur e coefficient (αV(BR)).
IPP
Peak Pulse Current: The peak current during the impulse. (See figure 2 )
P
PP
Peak Pulse Power: The pulse power as determined by the product of V
C
and I
PP
.
ID Standby Current: The current at the standoff voltage (V WM).
T4-LDS-0292, Rev. 1 (121800) ©2013 Microsemi Corporation Page 3 of 7
1N6358 – 1N6372 or
MPT-10 – MPT-45C
ELECTRICA L CHARACTERISTICS @ 25 oC (Both Polarit ies )
Unidirectional
MICROSEMI
PART NUMBER
STANDOFF
VOLTAGE
(NOTE 1)
VWM
Volts
MAXIMUM
REVERSE
LEAKAGE
@VWM
ID
µA
MINIMUM*
BREAKDOWN
VOLTAGE
@ 1.0 mA
V(BR) (min)
Volts
MAXIMUM
CLAMPING
VOLTAGE
(Fig. 2)
IPP1 = 1A
VC
Volts
MAXIMUM
CLAMPING
VOLTAGE
(Fig. 2)
@ IPP2 = 10A
VC
Volts
MAXIMUM
PEAK PULSE
CURRENT
IPP3
A
1N6358
1N6359
1N6360
MPT-10
MPT-12
MPT-15
10.0
12.0
15.0
2
2
2
11.7
14.1
17.6
13.7
16.1
20.1
14.1
16.5
20.6
90
70
60
1N6361
1N6362
1N6363
1N6364
MPT-18
MPT-22
MPT-36
MPT-45
18.0
22.0
36.0
45.0
2
2
2
2
21.2
25.9
42.4
52.9
24.2
29.8
50.6
63.3
25.2
32.0
54.3
70.0
50
40
23
19
VF at 100 amps peak is 3.5 volts maximum at 8.3 ms half-sine wave.
Bidirectional
MICROSEMI
PART NUMBER
STANDOFF
VOLTAGE
(NOTE 1)
VWM
Volts
MAXIMUM
REVERSE
LEAKAGE
@VWM
ID
µA
MINIMUM*
BREAKDOWN
VOLTAGE
@ 1.0 mA
V(BR) (min)
Volts
MAXIMUM
CLAMPING
VOLTAGE
(Fig. 2)
IPP1 = 1A
VC
Volts
MAXIMUM
CLAMPING
VOLTAGE
(Fig. 2)
@ IPP2 = 10A
VC
Volts
MAXIMUM
PEAK PULSE
CURRENT
IPP3
A
1N6366
1N6367
1N6368
MPT-10C
MPT-12C
MPT-15C
10.0
12.0
15.0
2
2
2
11.7
14.1
17.6
14.1
16.7
20.8
14.5
17.1
21.4
90
70
60
1N6369
1N6370
1N6371
1N6372
MPT-18C
MPT-22C
MPT-36C
MPT-45C
18.0
22.0
36.0
45.0
2
2
2
2
21.2
25.9
42.4
52.9
24.8
30.8
50.6
63.3
25.5
32.0
54.3
70.0
50
40
23
19
“C” suffix indicates bidirectional
NOTE 1: TVS devices are normally selected according t o the reverse “standoff voltage” (VWM) which should be equal to or greater than the DC or
continuous peak operati ng voltage level .
* The minimum breakdown voltage as shown takes into consideration the + volt tolerance normall y specified f or power supply regulation on
most integrated circ uit manuf act urers data sheets. Simil ar devices are available with reduced clam pi ng voltages where tighter regul ated
power supply voltages are employed.
T4-LDS-0292, Rev. 1 (121800) ©2013 Microsemi Corporation Page 4 of 7
1N6358 – 1N6372 or
MPT-10 – MPT-45C
GRAPHS
tp – Pulse Time
FIGURE 1
Peak Pulse Power vs Pulse Time
IPP – Peak Pulse Current – Amps
FIGURE 2
Typical Characteristic Clamping Voltage vs. Peak Pulse Current
P
pp
- Peak Pulse Power - kW
Vc – Clamping Voltage - Volts
T4-LDS-0292, Rev. 1 (121800) ©2013 Microsemi Corporation Page 5 of 7
1N6358 – 1N6372 or
MPT-10 – MPT-45C
GRAPHS
Time (t) in milliseconds
FIGURE 3
Pulse Wave Form for Exponential Surge
V(BR) – Breakdown Voltage – Volts
FIGURE 4
Typical Capacitance vs. Breakdown Voltage (Unidirectional Types)
Pulse Current (I
P
) in Percent of I
PP
C – Capacitance – picoFarads
T4-LDS-0292, Rev. 1 (121800) ©2013 Microsemi Corporation Page 6 of 7
1N6358 – 1N6372 or
MPT-10 – MPT-45C
GRAPHS
V(BR) – Breakdown Voltage – Volts
FIGURE 5
Typical Capacitance vs. Breakdown Voltage (Bidirectional Types)
TL – Lead Temperature °C
FIGURE 6
Steady-State and Peak Pulse Power Derating Curve
C – Capacitance – picoFarads
Steady-State and Peak Pu l s e
Power Dissipation (watts)
T4-LDS-0292, Rev. 1 (121800) ©2013 Microsemi Corporation Page 7 of 7
1N6358 – 1N6372 or
MPT-10 – MPT-45C
PACKAGE DIMENSIONS
NOTES:
1. Dimensions are in inches.
2. Millimeter equivalents are given for general information only.
3. The major diameter is essentially constant along its length.
4. Within this zone, diameter may vary to allow for lead finishes and
irregularities.
5. Dimension to allow for pinch or seal deformation anywhere along
tubulation.
6. Polarity symbol for transient suppressor.
7. Lead 1 shall be electrically connected to the case.
8. In accordance with ASME Y14.5M, diameters are equivalent to Φx
symbology.
Dimensions
Symbol
Inches
Millimeters
Notes
Min
Max
Min
Max
BD
0.215
0.235
5.46
5.97
BL
0.293
0.357
7.44
9.07
3
BLT
-
0.570
-
14.48
CD
0.045
0.100
1.14
2.54
5
LD
0.025
0.035
0.64
0.89
LL
1.000
1.625
25.40
41.28
LU
-
0.188
-
4.78
4
