1N6358 - 1N6372 or MPT-10 - MPT-45C Available Screening in reference to MIL-PRF-19500 available 1500 Watt Low Clamping Factor Transient Voltage Suppressor DESCRIPTION This Transient Voltage Suppressor (TVS) series for 1N6358 through 1N6372 are JEDEC registered selections for both unidirectional and bidirectional devices. The 1N6358 through 1N6364 are unidirectional and the 1N6366 through 1N6372 are bidirectional where they all provide a very low specified clamping factor for minimal clamping voltages (V C ) above their respective breakdown voltages (V BR ) as specified herein. They are most often used in protecting sensitive components from inductive switching transients or induced secondary lightning effects as found in lower surge levels of IEC61000-4-5. They are also very successful in protecting airborne avionics and electrical systems. Since their response time is virtually instantaneous, they can also protect from ESD and EFT per IEC61000-4-2 and IEC61000-4-4. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES * * * * * * * * Unidirectional and bidirectional TVS series in axial package for thru-hole mounting. Suppresses transients up to 1500 watts @ 10/1000 s (see figure 1). t clamping (0 volts to V (BR) min): Unidirectional - Less than 100 picoseconds. Bidirectional - Less than 5 nanoseconds. Working voltage (V WM ) range 10 V to 45 V. Low clamping factor (ratio of actual V C /V BR ): 1.33 @ full rated power and 1.20 @ 50% rated power. Hermetically sealed DO-13 metal package. Upscreening in reference to MIL-PRF-19500 is available. RoHS compliant versions available. DO-13 (DO-202AA) Package APPLICATIONS / BENEFITS * * * * * * * Designed to protect bipolar and MOS microprocessor based systems Protection from switching transients and induced RF. Protection from ESD & EFT per IEC 61000-4-2 and IEC 61000-4-4. Secondary lightning protection per IEC61000-4-5 with 42 ohms source impedance: Class 1, 2 & 3: 1N6358 to 1N6372 Class 4: 1N6358 to 1N6362 and 1N6366 to 1N6370 Secondary lightning protection per IEC61000-4-5 with 12 ohms source impedance: Class 1 & 2: 1N6358 to 1N6372 Class 3: 1N6358 to 1N6362 and 1N6366 to 1N6370 Class 4: 1N6358 and 1N6366 Secondary lightning protection per IEC61000-4-5 with 2 ohms source impedance: Class 2: 1N6358 to 1N6361 and 1N6366 to 1N6369 Class 3: 1N6358 and 1N6366 Inherently radiation hard as described in Microsemi "MicroNote 050". MAXIMUM RATINGS Parameters/Test Conditions Junction and Storage Temperature Thermal Resistance, Junction to Lead @ 0.375 inch (10 mm) from body Thermal Resistance, Junction to Ambient (1) Peak Pulse Power @ T L = +25 C (2) Rated Average Power Dissipation @ T L +125 C (3) Solder Temperature @ 10 s Symbol T J and T STG R JL Value -65 to +175 50 Unit C C/W R JA P PP P M(AV) T SP 110 1500 1 260 C/W W W o C Notes: 1. When mounted on FR4 PC board with 4 mm2 copper pads (1 oz) and track width 1 mm, length 25 mm. 2. At 10/1000 s with repetition rate of 0.01% or less (see figures 1, 2, & 4). 3. At 3/8 inch (10 mm) from body (see derating in figure 5). TVS devices are not typically used for dc power dissipation and are instead operated at or less than their rated standoff voltage (V WM ) except for transients that briefly drive the device into avalanche breakdown (V BR to V C region). T4-LDS-0292, Rev. 1 (121800) (c)2013 Microsemi Corporation MSC - Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC - Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com Page 1 of 7 1N6358 - 1N6372 or MPT-10 - MPT-45C MECHANICAL and PACKAGING * * * * * * * CASE: DO-13 (DO-202AA), welded, hermetically sealed metal and glass. TERMINALS: All external metal surfaces are tin-lead plated or RoHS compliant annealed matte-tin plating solderable per MILSTD-750 method 2026. MARKING: Part number and polarity diode symbol. POLARITY: Cathode connected to case and polarity indicated by diode symbol. TAPE & REEL option: Standard per EIA-296 (add "TR" suffix to part number). Consult factory for quantities. WEIGHT: Approximately 1.4 grams. See package dimensions on last page. PART NOMENCLATURE MQ 1N6358 (e3) Reliability Level MQ (reference JAN) MX (reference JANTX) MV (reference JANTXV) CDS (reference JANS) Blank = Commercial VC I PP P PP ID JEDEC type number (See Electrical Characteristics table) SYMBOLS & DEFINITIONS Definition Symbol V WM V (BR) RoHS Compliance e3 = RoHS compliant Blank = non-RoHS compliant Standoff Voltage: Applied Reverse Voltage to assure a nonconductive condition. o Breakdown Voltage: This is the Breakdown Voltage the device will exhibit at 25 C. Maximum Clamping Voltage: The maximum peak voltage appearing across the TVS when subjected to the peak pulse current in a one millisecond time interval. The peak pulse voltage is the combination of voltage rise due to both the series resistance and thermal rise and positive temperature coefficient ( V(BR) ). Peak Pulse Current: The peak current during the impulse. (See figure 2) Peak Pulse Power: The pulse power as determined by the product of V C and I PP . Standby Current: The current at the standoff voltage (V WM ). T4-LDS-0292, Rev. 1 (121800) (c)2013 Microsemi Corporation Page 2 of 7 1N6358 - 1N6372 or MPT-10 - MPT-45C o ELECTRICAL CHARACTERISTICS @ 25 C (Both Polarities) Unidirectional STANDOFF VOLTAGE (NOTE 1) V WM MAXIMUM REVERSE LEAKAGE @V WM ID MINIMUM* BREAKDOWN VOLTAGE @ 1.0 mA V (BR) (min) MICROSEMI Volts Volts PART NUMBER A 1N6358 MPT-10 10.0 2 11.7 1N6359 MPT-12 12.0 2 14.1 1N6360 MPT-15 15.0 2 17.6 1N6361 MPT-18 18.0 2 21.2 1N6362 MPT-22 22.0 2 25.9 1N6363 MPT-36 36.0 2 42.4 1N6364 MPT-45 45.0 2 52.9 V F at 100 amps peak is 3.5 volts maximum at 8.3 ms half-sine wave. MAXIMUM CLAMPING VOLTAGE (Fig. 2) I PP1 = 1A VC Volts 13.7 16.1 20.1 24.2 29.8 50.6 63.3 MAXIMUM CLAMPING VOLTAGE (Fig. 2) @ I PP2 = 10A VC Volts 14.1 16.5 20.6 25.2 32.0 54.3 70.0 MAXIMUM PEAK PULSE CURRENT I PP3 MAXIMUM CLAMPING VOLTAGE (Fig. 2) I PP1 = 1A VC Volts 14.1 16.7 20.8 24.8 30.8 50.6 63.3 MAXIMUM CLAMPING VOLTAGE (Fig. 2) @ I PP2 = 10A VC Volts 14.5 17.1 21.4 25.5 32.0 54.3 70.0 MAXIMUM PEAK PULSE CURRENT I PP3 A 90 70 60 50 40 23 19 Bidirectional STANDOFF VOLTAGE (NOTE 1) V WM MICROSEMI Volts PART NUMBER 1N6366 MPT-10C 10.0 1N6367 MPT-12C 12.0 1N6368 MPT-15C 15.0 1N6369 MPT-18C 18.0 1N6370 MPT-22C 22.0 1N6371 MPT-36C 36.0 1N6372 MPT-45C 45.0 "C" suffix indicates bidirectional MAXIMUM REVERSE LEAKAGE @V WM ID MINIMUM* BREAKDOWN VOLTAGE @ 1.0 mA V (BR) (min) A 2 2 2 2 2 2 2 Volts 11.7 14.1 17.6 21.2 25.9 42.4 52.9 A 90 70 60 50 40 23 19 NOTE 1: TVS devices are normally selected according to the reverse "standoff voltage" (V WM ) which should be equal to or greater than the DC or continuous peak operating voltage level. * The minimum breakdown voltage as shown takes into consideration the + volt tolerance normally specified for power supply regulation on most integrated circuit manufacturers data sheets. Similar devices are available with reduced clamping voltages where tighter regulated power supply voltages are employed. T4-LDS-0292, Rev. 1 (121800) (c)2013 Microsemi Corporation Page 3 of 7 1N6358 - 1N6372 or MPT-10 - MPT-45C Ppp - Peak Pulse Power - kW GRAPHS t p - Pulse Time Vc - Clamping Voltage - Volts FIGURE 1 Peak Pulse Power vs Pulse Time I PP - Peak Pulse Current - Amps FIGURE 2 Typical Characteristic Clamping Voltage vs. Peak Pulse Current T4-LDS-0292, Rev. 1 (121800) (c)2013 Microsemi Corporation Page 4 of 7 1N6358 - 1N6372 or MPT-10 - MPT-45C Pulse Current (IP) in Percent of IPP GRAPHS Time (t) in milliseconds C - Capacitance - picoFarads FIGURE 3 Pulse Wave Form for Exponential Surge V (BR) - Breakdown Voltage - Volts FIGURE 4 Typical Capacitance vs. Breakdown Voltage (Unidirectional Types) T4-LDS-0292, Rev. 1 (121800) (c)2013 Microsemi Corporation Page 5 of 7 1N6358 - 1N6372 or MPT-10 - MPT-45C C - Capacitance - picoFarads GRAPHS V (BR) - Breakdown Voltage - Volts Steady-State and Peak Pulse Power Dissipation (watts) FIGURE 5 Typical Capacitance vs. Breakdown Voltage (Bidirectional Types) T L - Lead Temperature C FIGURE 6 Steady-State and Peak Pulse Power Derating Curve T4-LDS-0292, Rev. 1 (121800) (c)2013 Microsemi Corporation Page 6 of 7 1N6358 - 1N6372 or MPT-10 - MPT-45C PACKAGE DIMENSIONS NOTES: 1. Dimensions are in inches. 2. Millimeter equivalents are given for general information only. 3. The major diameter is essentially constant along its length. 4. Within this zone, diameter may vary to allow for lead finishes and irregularities. 5. Dimension to allow for pinch or seal deformation anywhere along tubulation. 6. Polarity symbol for transient suppressor. 7. Lead 1 shall be electrically connected to the case. 8. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. T4-LDS-0292, Rev. 1 (121800) Symbol BD BL BLT CD LD LL LU (c)2013 Microsemi Corporation Dimensions Inches Millimeters Min Max Min Max 0.215 0.293 0.045 0.025 1.000 - 0.235 0.357 0.570 0.100 0.035 1.625 0.188 5.46 7.44 1.14 0.64 25.40 - 5.97 9.07 14.48 2.54 0.89 41.28 4.78 Notes 3 5 4 Page 7 of 7