TYPES TiP42, TIP42A, TIP42B, TIP42C P-N-P SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH TIP41, TIP41A, TIP41B, TIP41C @ 65 W at 25C Case Temperature e 6A Rated Collector Current e Min ft of 3 MHz at 10 V, 500 mA mechanical data THE COLLECTOR IS IN ELECTRICAL CONTACT WITH THE CASE MECHANICAL INTERCHANGEABILITY OF TIPaz PLASTIC PACKAGE WITH 70.66 OUTLINE THIS PORTION OF FREE OF FLASH gore 3LEAOS 9375 0.180 my aN p+ 8 Se 2 oo 0.590 0.115 aaee T ka rd M (70-66 DIMENSIONS) e200 CASE TEMPERATURE 0.030 MIN MEASUREMENT POINT (2 PLACES) ALL DIMENSIONS ARE (N INCHES, absolute maximum ratings at 25C case temperature (unless otherwise noted) TiP42) =~ TIP42A =TIPA2B TIP42C Collector-Base Voltage .. . Ce ee ee ee ee ee) 6400 -60V0 -80V0 -100V -40V -60V -80V 100V NOTES: Collector-Emitter Voltage (See Note 1 Emitter-Base Voltage coe Continuous Collector Current Peak Collector Current (See Note 2) Continuous Base Current . : Safe Operating Region at {or below) 25 c Case Temperature Continuous Device Dissipation at (or below) 25C Case Temperature (See Note 3) Continuous Device Dissipation at (or below) 25 c Free- Air Temperature (See Note 4) Unclamped Inductive Load Energy (See Note 5) Operating Collector Junction Temperature Range Storage Temperature Range oo Lead Temperature 1/8 inch from Case for 10 Seconds . This value applies when the base-emitter diode is opean-circuited. 1 2, This value applies for ty 0.3 ms, duty cycle < 10%. 3. Derate tinearly to 150C case temperature at the rate of 0,52 we, 4 5. . Derate linearly to 1 50C free-air temperature at the rate of 16 mw/c, << -5v __ <<. -6 4 ____ <<. _ -10A _> <_ -3A <- See Figure 5 _> <.___ 65 W _ <<. 2w__ > a_\__ 625 mJ ____ <|_ 65C to 150C __ <_ -65C to 150C _ <_ 260C. ____ . This rating is based on the capability of the transistor to operate safely in the circuit of Figure 2, L = 20 mH, Rep 7 100 2, Veape=0V, Ag =0.1 &, Veg = 10 V. Energy Ie2L/2. TEXAS INSTRUMENTSTYPES TIP42, TIP42A, TIP42B, TIP42C P-N-P SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS electrical characteristics at 25C case temperature PARAMETER TEST CONDITIONS Tip42 TIPA2A TiFS28 Tipaze UNIT MIN MAX} MIN MAX] MIN MAX! MIN MAX Collector-E mitte: I =-30 mA, Ig= VipRIcEO Se c Bo 40 ~60 80 -100 Vv Breakdown Voltage See Note 6 Collector Cutoff Vee = 30V, Ip =0 0.7 ~0.7 {CEO mA Current Vee = -60V, Ig =0 ~0.7 0.7 Vcg = 40V, Vee =O 0.4 Collector Cutoff Vce = 60V, Vee =0 0.4 Ices CE BE mA Current Vce = 80V, Vee =90 0.4 Vce=-100V, Vpe=0 ~0.4 Emitter Cutoff | .Veg=z-5V, Ic=0 -1 -1 -1 al E60 Current EB c 1 | mA Voce =-4V, ic =-O03 A Static Forward cE ' c=-O3A, | 55 30 30 30 See Notes 6 and 7 hee Current Transfer Ratio Vee=~4, Iga 34, 1575 | 15 75] 15 75] 18 75 See Notes 6 and 7 Base-E mitter Voce =-4V, Ic =-6A, Vv 2 2 2 -2 BE Voltage See Notes 6 and 7 v Coflector-E mitter Ig =0.6 A, Io =-6A, Vv -1.5 15 -1.5 15 CE (sat) Saturation Voltage See Notes 6 and 7 v Smali-Signat +E mi =-10V =0.5A, hte Common-Emitter Voce ov, Ig = -0.5 20 20 20 20 Forward Current f=1kHz Transfer Ratio Small-Signal Cc -E mitt Veg =-10V, i =-0.5 4, intel ommon-Emitter CE Cc 3 3 3 3 Forward Current f=1MAz Transfer Ratio NOTES: 6. These parameters must be measured using pulse techniques, ty, = 300 us, duty cycle < 2%. 7. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts, thermal characteristics PARAMETER MAX | UNIT Resc _Junction-to-Case Thermal Resistance 1,92 COW Reya Junction-to-Free-Air Therma! Resistance 62.5 switching characteristics at 25C case temperature PARAMETER TEST CONDITIONST TYP | UNIT ton Turn-On Time tc=-6A, Ip(1p = -O.6A, = pia) = O.6A, 0.4 ; Toff Turn-Off Tima VBE (oft) @ 4 V. RL =82, See Figure 1 o7 | tVoltage and current vaiues shown are nominal; exact values vary slightly with transistor parameters. 2-206 TEXAS INSTRUMENTSTYPES TIP42, TIP42A, TIP428, TIP42C P-N-P SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS PARAMETER MEASUREMENT INFORMATION WNPUT aa MONITOR 6) UTPUT Na MONITOR Ragi= 1022 a GG) _ bd mF 36 @ a) eS > 2N4301 As IN9ta = 4ND14 INT Nb Tt Rep2* 10% Rp s5a 270 pF 30.2 mn Vgen Vep24V Veet = 16V ALNUST FOR Von =-t4V AT + INPUT MONITOR OUTPUT | Vee = 30 + mn A TEST CIRCUIT VOLTAGE WAVEFORMS NOTES: A. Vgen is a 30-V pulse (from 0 V) into a $0-2 termination. 8. The Vge, waveform is supplied by a generator with the following characteristics: tp < 15 ns, tg < 15 ns, Zgyz = 50 2, ty = 20 ws, duty cycle < 2%, Cc. Waveforms are monitorad on an oscilloscope with the following characteristics: tp < 15 ns, Rijn 2 10 MQ, Cin < 11.5 PF. O. Resistors must be noninductive types, The d-c power supplies may require additional bypassing in order to minimize ringing. m INDUCTIVE LOAD SWITCHING tw = Sms { t (See Note B) INPUT VOLTAGE Lt (See Note A) Apa1 TUT L2 o 202 see N COLLECTOR PI ee Note A) INPUT 502 2N4301 e CURRENT R 100 2 - ~25 Am = BB2 > vi = IOV 5022 ec 4 Ic MONITOR o~ - Veg2= 0 10 Vesa = | Rez O18 Vpe1> 10v 5 coucectoR | +, VOLTAGE ( * ( 1 tL VipRicER + * ~~ - ee TEST CIRCUIT VOLTAGE AND CURRENT WAVEFORMS NOTES: A. L1 and L2 are 10 mH, 0.11 2, Chicago Standard Transformer Corporation C-2688, or equivalent, B. Input pulse width is increased until icy = 2.5 A. FIGURE 2 TEXAS INSTRUMENTS 2-207TYPES TIP42, TIP42A, TIP42B, TIP42C P-N-P SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS THERMAL INFORMATION STATIC FORWARD CURRENT TRANSFER RATIO vs COLLECTOR CURRENT DISSIPATION DERATING CURVE 1000 700 | ce = ~4V To = 25C 400 Notes 6 and 7 200 100 70 hfeStatic Forward Current Transfer Ratio Py Maximum Continuous Device DissipationW 1 0.01 0.04 -0.1 -0.4 -1 -2 -4 ~-10 0 25 50 75 100 125 150 I~Collector CurrentA ToCase TemperatureC FIGURE 3 NOTES: 6, These parameters must be measured using pulse techniques. ty, = 300 us, duty cycle < 2%. 7. These parameters are measured with voltage- FIGURE 4 sansing contacts separate from the current- carrying contacts. MAXIMUM SAFE OPERATING REGION 40 20 See Note 10 7 2 ~ 5 Te < 26C oO 5 2 3 tw= us, d= = 10% 3 1|tw> 1 ms, d= 0.1 = 10% 9 ~0,7 [tw = 10 ms, d= 0.1=1 2 OPERA 0.4 TIP42 -0.2 TIP42A TIP42B Til -1 -2 -4 7-10 ~20 -40 -100 400 VcE-Collector-Emitter VoltageV FIGURE 5 NOTE 8: This combination of maximum voltage and current may be achieved only when switching from saturation to cutoff with a clamped inductive load. TI connot assume any responsibility for any circuits shown 2-208 TEXAS INSTRUMENTS or represent that they are tee trom. potent intringement TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANY TIME 1N ORDER TO IMPROVE DESIGN AND TO SUPPLY THE BEST PRODUCT POSSIBLE3-6 Prot @ Typ To = 25 9C VCEO \cp hFE @ Ic type (100 C) min max min max NPN PNP Ww A A TIP 35B TIP 368 30 80 25 25 100 1,5 TIP 35 C TIP 36 90 7100 25 25 100 15 TIP 41 TIP 42 65 40 6 15 75 3 TIP41A TIP 424 65 60 6 15 75 3 TIP 41B TIP 42B 65 80 6 15 75 3 TIP 416 TIP 42C 65 100 6 15 75 3 TIP 3055 TIP 5530 90 70 15 20 4 BD 633 BD 634 30 45 2 25 1 BD 635 BD 636 30 60 2 25 1 BD 637 BD 638 30 80 2 25 1 BD 733 BD 734 40 32 4 50 2 BD 735 BD 736 40 32 4 50 2 BD 737 BD738 40 45 4 40 2 TIP 110 TIP 115 50 60 2 1000 1 TIP 1141 TIP 116 50 80 2 1000 1 TIP 112 TIP 117 50 100 2 1000 1 TIP 120 TIP 125 65 60 5 1000 3 TIP 121 TIP 126 65 80 5 1000 3 TIP 122 TIP 127 65 100 5 1000 3 TIP 140 TIP 145 125 60 10 1000 5 TIP 141 TIP 146 125 80 10 1000 5 TIP 142 TIP 147 125 100 10 1000 5 Prot @ Typ Ta = 25C To = 25 9C VCEO Icb hee @ le type (100 C} (100 C} min max min max Ww Ww Vv A A 2N 4915 4 87,5 80 5 25 100 2,5 2N 4998 2 (20) 80 2 30 90 1 2N 5000 2 (20) 80 2 70 200 1 2N 5002 (33,3) 80 5 30 90 2,5 2N 5004 (33,3) 80 5 70 200 2,5 2N 5038 5 140 90 20 20 100 12 2N 5039 5 140 76 20 20 100 10 2N 6148 1 (4) 80 2 30 30 1 2N 5150 1 (4) 80 2 70 200 1 2N 5152 (6,7) 80 2 30 90 2,5 2N 5154 (6,7) 80 2 70 200 25 2N 5301 5 200 40 20 40 60 1 2N 5302 5 200 60 20 40 60 1 2N 5303 5 200 80 20 40 60 1 TEXAS INSTRUMENTSfT Ices @ VcE Gehause Anwendungen min (IcEQ) package applications, remarks MHz BA Vv 3 700 80 TO-3P Verstarker, Schalter, komplementar zu TIP 36 B amplifier, switch, complementary to TIP 36 B 3 700 100 TO-66P Verstarker, Schalter, komplementar zu TIP 36 C amplifier, switch, complementary to TIP 36 C 3 400 40 TO-66P Verstarker, Schalter, komplementar zu TIP 42 amplifier, switch, complementary to TIP 42 3 400 60 TO-66P Verstarker, Schalter, komplementar zu TIP 42 A amplifier, switch, complementary to TIP 42 A 3 400 80 TO-66P Verstarker, Schalter, komplementar zu TIP 42 B amplifier, switch, complementary to TIP 42 B 3 400 100 TO-66P Verstarker, Schalter, komplementar zu TIP 42 C amplifier, switch, complementary to TIP 42 C TO-3P TO-66 Kompiementar TO-66 Endstufen TO-66 for complementary output stages TO-66 TO-66 TO-66 TO-66P TO-66P Darlington TO-66P TO-66P Verstarker, Schalter . TO-66P amplifier, switch Darlington TO-66P TO-3P TO-3P Darlington TO-3P fT ICES @ VE Gehause Anwendungen, Bemerkungen min (IcEO) package applications, remarks MHz HA v 4 (1000) 80 TO-3 Verstarker, Schalter amplifier, switch 50 (0,05) 40 TO-59 Fir Computeranwendung 60 (0,05) 40 TO-59 komplementar zu 2N 4999, 2N 5001, 2N 5003, 2N 5005 60 (0,05) 40 TO-59 computer application 70 (0,05) 40 TO-59 complementary to 2N 4999, 2N 5001, 2N 5003, 2N 5005 60 50 140 TO-3 Verstarker und schnelle Schalter 60 50 110 TO-3 amplifier and high-speed switch 50 (0,05) 40 TO-39 Fur Computeranwendung 60 (0,05) 40 TO-39 komplementar zu 2N 5147, 2N 5149, 2N 5151, 2N 5153 60 (0,05) 40 TO-39 computer application 70 (0,05) 40 TO-39 complementary to 2N 5147, 2N 5149, 2N 5151, 2N 5153 4 (5) 40 TO-3 Verstarker, Schalter 4 (5) 60 TO-3 amplifier, switch 4 (5) 80 TO-3 TEXAS INSTRUMENTS 37