O3103TN (KT)/71598HA (KT)/3277KI/N255MW, TS No.2006-1/4
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
High-Voltage Switching Applications
Ordering number:ENN2006A
2SA1417/2SC3647
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
( ) : 2SA1417
Specifications
Absolute Maximum Ratings at Ta = 25˚C
4.5
1.6
0.5
0.4
1.5
1.0 2.5
4.25max
3.0
1.5
0.4
0.75
321
Electrical Characteristics at Ta = 25˚C
Package Dimensions
unit:mm
2038A
[2SA1417/2SC3647]
Features
· Adoption of FBET, MBIT processes.
· High breakdown voltage and large current capacity.
· Ultrasmall size making it easy to provide high-
density, small-sized hybrid ICs.
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
OBC 021)(V
egatloVrettimE-ot-rotcelloCV
OEC 001)(V
egatloVesaB-ot-rettimEV
OBE 6)(V
tnerruCrotcelloCI
C2)(A
)esluP(tnerruCrotcelloCI
PC 3)(A
noitapissiDrotcelloCP
C005Wm
5.1W
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55
Moutned on ceramic board (2502×0.8mm) ˚C
˚C
retemaraPlobmySsnoitidnoC sgnitaR tinU
nimpytxam
tnerruCffotuCrotcelloCI
OBC VBC I,V001)(= E0=001)(An
tnerruCffotuCrettimEI
OBE VBE I,V4)(= C0=001)(An
niaGtnerruCCDh
EF VEC I,V5)(= CAm001)(=*001*004
tcudorPhtdiwdnaB-niaGf
TVEC I,V01)(= CAm001)(=021zHM
* : The 2SA1417/2SC3647 are classified by 100mA hFE as follows : Continued on next page.
knaRRST
hEF 002ot001082S041004ot002
Marking 2SA1417 : AC hFE rank : R, S, T
2SC3647 : CC
No.2006-2/4
2SA1417/2SC3647
Switching Time Test Circuit
Continued from preceding page.
retemaraPlobmySsnoitidnoC sgnitaR tinU
nimpytxam
ecnaticapaCtuptuOC
bo VBC zHM1=f,V01)(= )52(Fp
61Fp
egatloVnoitarutaSrettimE-ot-rotcelloCV
)tas(EC ICI,A1)(= BAm001)(= )22.0()6.0(V
31.04.0V
egatloVnoitarutaSrettimE-ot-esaBV
)tas(EB ICI,A1)(= BAm001)(=58.0)(2.1)(V
egatloVnwodkaerBesaB-ot-rotcelloCV
OBC)RB( ICI,Aµ01)(= E0=021)(V
egatloVnwodkaerBrettimE-ot-rotcelloCV
OEC)RB( ICR,Am1)(= EB =001)(V
egatoVnwodkaerBesaB-ot-rettimEV
OBE)RB( IEI,Aµ01)(= C0=6)(V
emiTNO-nruTt
no .tiucriCtseTdeificepseeS )08(sn
08sn
emiTegatotSt
gts .tiucriCtseTdeificepseeS )057(sn
0001sn
emiTllaFt
f.tiucriCtseTdeificepseeS )04(sn
05sn
INPUT
50V
50
RL
100µF 470µF
--5V
10IB1=--10IB2=IC=0.7A
(For PNP, the polarity is reversed.)
++
VR
PW=20µs
D.C.1%
RB
IB1
IB2
ITR03542
IC -- VCE
0--2--1 --4--3 --5 214350
0
--0.4
--0.8
--1.2
--1.6
--2.0
0
--0.2
--0.6
--0.4
--0.8
--1.0
0.4
0.8
1.2
1.6
2.0
0
0.2
0.6
0.4
0.8
1.0
0
ITR03543
IC -- VCE
10 20 30 40 500
ITR03545
ITR03544
--
40
--
30
--
50
--
10
--
20
0
IC -- VCE
--20
mA
--30mA
--10mA
--5mA
--3
mA
--2
mA
--1mA
IB=0
2SA1417 2SC3647
2SC3647
IB=0
IB=0
IC -- VCE
2SA1417
20mA
30mA
50mA
40
mA
10
mA
5mA
3
mA
2mA
1mA
--6
mA
--5
mA
--4
mA
--3
mA
--2
mA
--1
mA
IB=0
0.5mA
2.5mA
3.0
mA
3.5
mA
4.0
mA
4.5
mA
5.0
mA
2.0
mA
1.5
mA
1.0mA
--40
mA
--50
mA
Collector Current, IC–A
Collector-to-Emitter Voltage, VCE –V
Collector Current, IC–A
Collector-to-Emitter Voltage, VCE –V
Collector Current, IC–A
Collector-to-Emitter Voltage, VCE –V
Collector Current, IC–A
Collector-to-Emitter Voltage, VCE –V
No.2006-3/4
2SA1417/2SC3647
Cob -- VCB
ITR03551
ITR03550
2
0.01 5773
0.1 257323
1.0
--
2
--
0.01
--
0.1
--
5
--
7
--
7
--
3
--
2
--
1.0
--
5
--
7
--
3
--
2
--
32
0.01 0.1
5773 2 1.0
57323
10
100
2
3
2
3
5
7
2
1.0 5773 2 2
10 573100
10
100
2
3
5
7
3
5
7
--
1000
--
100
--
10
--
2
--
3
--
5
--
7
--
2
--
3
--
5
--
7
fT -- ICITR03549
hFE -- IC
ITR03548
ITR03546
IC -- VBE
--
5
--
7
--
7
--
3
--
2
--
0.01
--
0.1
--
5
--
7
--
3
--
2
--
3
--
2
--
1.0
--
0.8
--
0.4
0
--
1.2
--
1.6
--
2.4
--
2.0
0.8
0.4
0
1.2
1.6
2.4
2.0
100
1000
5
7
3
2
5
7
3
100
1000
5
7
3
2
5
7
357732
0.01 0.1 573232
1.0
--
0.6
--
0.8
0
--
0.4
--
0.2
--
1.0
--
1.2 0.6 0.8
00.40.2 1.0 1.2
ITR03547
2SA1417
VCE=--5V 2SC3647
VCE=5V
IC -- VBE
hFE -- IC
2SA1417
VCE=--5V 2SC3647
VCE=5V
ITR03552
VCE(sat) -- IC
100
10
2
3
5
7
1000
2
3
5
7
ITR03553
VCE(sat) -- IC
2SC3647
IC / IB=10
2SA1417
IC / IB=10
--
25
°C
25
°C
Ta=75
°C
--25°C
25
°C
Ta=75
°C
--
25
°C
25
°C
Ta=75
°C
--
25°C
25°C
Ta=75
°C
--25°C
25°C
Ta=75°C
--25°C
25
°C
Tc=75°C
2SA1417
2SC3647
2SA1417
2SC3647
2SA1417 / 2SC3647
VCE=10V 2SA1417 / 2SC3647
f=1MHz
Collector Current, IC–A
Base-to-Emitter Voltage, VBE –V
Collector Current, IC–A
Base-to-Emitter Voltage, VBE –V
DC Current Gain, hFE
Collector Current, IC–A
DC Current Gain, hFE
Collector Current, IC–A
For PNP, minus sign is omitted. For PNP, minus sign is omitted.
Gain-Bandwidth Product, fT–MHz
Collector Current, IC–A
Output Capacitance, Cob pF
Collector-to-Base Voltage, VCB -- V
Collector Current, IC A Collector Current, IC–A
Collector-to-Emitter
Saturation Voltage, VCE(sat) mV
Collector-to-Emitter
Saturation Voltage, VCE(sat) mV
PS No.2006-4/4
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of October, 2003. Specifications and information herein are subject
to change without notice.
2SA1417/2SC3647
ITR03554
VBE(sat) -- IC
--
1.0
--
3
--
10
--
5
--
7
--
5
--
7
--
3
--
2
0.01
3
0.1
5
7
7
5
2
3
1.0
5
5
7
2
3
2
--
7
--
0.01
--
0.1
--
5
--
7
--
3
--
2
--
1.0
--
5
--
7
--
3
--
2
--
3
--
2
1.0
3
10
5
7
5
7
3
2
70.01 0.1
5732 1.0
573232
71.0
5322
0
0.2
0.4
0.6
0.8
1.8
1.6
1.4
1.2
1.0
0 20 80 1006040 160140120
ITR03555
VBE(sat) -- IC
ITR03556
A S O
Infinite heat sink
710
5327
100
5
PC -- Ta
ITR03557
2SA1417 / 2SC3647
2SA1417 / 2SC3647
ICP=3A
IC=2A
1ms
10
ms
100
m
s
DC operation
For PNP, minus sign is omitted.
Single Pulse
Ta=25°C
Mounted on ceramic board(250mm
2
×0.8mm)
25°C
Ta=
--
25°C
75°C
2SC3647
IC / IB=10
2SA1417
IC / IB=10
25°C
Ta=
--
25°C
75°C
Collector Current, IC A Collector Current, IC–A
Base-to-Emitter
Saturation Voltage, VBE(sat) V
Base-to-Emitter
Saturation Voltage, VBE(sat) V
Collector-to-Emitter Voltage, VCE –V
Collector Current, IC–A
Collector Dissipation, PC–W
Ambient Temperature, Ta ˚C
Mounted on ceramic board(250mm
2
×0.8mm)