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FDD8447L 40V N-Channel PowerTrench® MOSFET
©2008 Fairchild Semiconductor Corporation
FDD8447L Rev. 1.2
www.fairchildsemi.com
1
FDD8447L
40V N-Channel PowerTrench® MOSFET
40V, 50A, 8.5mΩ
Features
Max rDS(on) = 8.5mΩ at VGS = 10V, ID = 14A
Max rDS(on) = 11.0mΩ at VGS = 4.5V, ID = 11A
Fast Switching
RoHS Compliant
General Description
This N-Channel MOSFET has been produced using Fairchild
Semiconductor’s proprietary PowerTrench® technology to
deliver low rDS(on) and optimized BVDSS capability to offer
superior performance benefit in the application.
Applications
Inverter
Power Supplies
G
S
D
TO-252
D-PAK
(TO-252)
D
G
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
VDS Drain to Source Voltage 40 V
VGS Gate to Source Voltage ±20 V
ID
Drain Current -Continuous (Package limited) TC= 25°C 50
A
-Continuous (Silicon limited) TC= 25°C 57
-Continuous TA= 25°C (Note 1a) 15.2
-Pulsed 100
ISMax Pulse Diode Current 100 A
EAS Drain-Source Avalanche Energy (Note 3) 153 mJ
PD
Power Dissipation TC= 25°C 44
W TA= 25°C (Note 1a) 3.1
TA= 25°C (Note 1b) 1.3
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C
RθJC Thermal Resistance, Junction to Case 2.8
°C/W
RθJA Thermal Resistance, Junction to Ambient (Note 1a) 40
RθJA Thermal Resistance, Junction to Ambient (Note 1b) 96
Device Marking Device Package Reel Size Tape Width Quantity
FDD8447L FDD8447L D-PAK(TO-252) 13’’ 16mm 2500 units
March 2015
FDD8447L 40V N-Channel PowerTrench® MOSFET
FDD8447L Rev. 1.2 www.fairchildsemi.com
2
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 40 V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient ID = 250µA, referenced to 25°C 35 mV/°C
IDSS Zero Gate Voltage Drain Current VDS = 32V, VGS = 0V 1µA
IGSS Gate to Source Leakage Current VGS = ±20V, VGS = 0V ±100 nA
On Characteristics
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 1.0 1.9 3.0 V
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient ID = 250µA, referenced to 25°C -5 mV/°C
rDS(on) Static Drain to Source On Resistance
VGS = 10V, ID = 14A 7.0 8.5
mΩVGS = 4.5V, ID = 11A 8.5 11.0
VGS = 10V, ID = 14A, TJ=125°C 10.4 14.0
gFS Forward Transconductance VDS = 5V, ID = 14A 58 S
(Note 2)
Dynamic Characteristics
Ciss Input Capacitance VDS = 20V, VGS = 0V,
f = 1MHz
1970 pF
Coss Output Capacitance 250 pF
Crss Reverse Transfer Capacitance 150 pF
RgGate Resistance f = 1MHz 1.27 Ω
Switching Characteristics
td(on) Turn-On Delay Time
VDD = 20V, ID = 1A
VGS = 10V, RGEN = 6Ω
12 21 ns
trRise Time 12 21 ns
td(off) Turn-Off Delay Time 38 61 ns
tfFall Time 9 18 ns
Qg(TOT) Total Gate Charge, VGS = 10V
VDD = 20V, ID = 14A
VGS = 10V
37 52 nC
Qg(TOT) Total Gate Charge, VGS = 5V 20 28 nC
Qgs Gate to Source Gate Charge 6 nC
Qgd Gate to Drain “Miller” Charge 7 nC
Drain-Source Diode Characteristics
Notes:
1: RθJA is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθJA is determined by the user’s board design.
2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3: Starting TJ = 25o
C, L = 1mH, IAS = 17.5A, VDD = 40V, VGS = 10V.
4
a. 40°C/W when mounted on a 1 in2 pad of 2 oz copper
b. 96°C/W when mounted on a minimum pad.
----------------
ISMaximum Continuous Drain-Source Diode Forward Current (Note 1a) 2.6 A
VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = 14A (Note 2) 0.8 1.2 V
trr Reverse Recovery Time IF = 14A, di/dt = 100A/µs 22 ns
Qrr Reverse Recovery Charge 11 nC
Typical Characteristics
0
20
40
60
80
100
00.511.522.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
3.5V
4.0V
V
GS
= 10V
3.0V
5.0V
4.5V
6.0V
0.6
1
1.4
1.8
2.2
2.6
3
0 20406080100
I
D
, DRAIN CURRENT (A)
NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 3.0V
6.0V
5.0V
4.5V
4.0V
3.5V
10.0V
Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage
0.6
0.8
1
1.2
1.4
1.6
-50 -25 0 25 50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (
o
C)
NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= 14A
V
GS
= 10V
0.005
0.0075
0.01
0.0125
0.015
0.0175
0.02
246810
V
GS
, GATE TO SOURCE VOLTAGE (V)
r
DS(ON)
, ON-RESISTANCE (OHM)
I
D
= 7A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage
0
20
40
60
80
100
11.522.533.544.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
T
A
= 125
o
C
25
o
C
-55
o
C
V
DS
= 5V
0.0001
0.001
0.01
0.1
1
10
100
1000
0 0.2 0.4 0.6 0.8 1 1.2 1.4
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
, REVERSE DRAIN CURRENT (A)
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
FDD8447L Rev.C 3 www.fairchildsemi.com
FDD8447L 40V N-Channel PowerTrench® MOSFET
FDD8447L Rev. 1.2 3 www.fairchildsemi.com
Typical Characteristics
0
2
4
6
8
10
0 10203040
Q
g
, GATE CHARGE (nC)
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= 14A V
DS
= 10V
20V
30V
0
500
1000
1500
2000
2500
3000
0 10203040
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
C
iss
C
rss
C
oss
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics Figure 8. Capacitance Characteristics
0.01
0.1
1
10
100
1000
0.01 0.1 1 10 100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
DC
1s
100ms
R
DS(ON)
LIMIT
V
GS
= 10V
SINGLE PULSE
R
θ
JA
= 96
o
C/W
T
A
= 25
o
C
10ms
1ms
100µs
0
20
40
60
80
100
0.001 0.01 0.1 1 10 100 1000
t
1
, TIME (sec)
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
R
θ
JA
= 96°C/W
T
A
= 25°C
Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum
Power Dissipation
0
20
40
60
80
100
0.0001 0.001 0.01 0.1 1 10 100 1000
t
1
, TIME (sec)
I(pk), PEAK TRANSIENT CURRENT (A)
SINGLE PULSE
R
θ
JA
= 96°C/W
T
A
= 25°C
1
10
100
0.1 1 10
t
AV
, TIME IN AVANCHE(ms)
I
(AS)
, AVALANCHE CURRENT (A)
T
J
= 25
o
C
Figure 11. Single Pulse Maximum Peak
Current
Figure 12. Unclamped Inductive Switching
Capability
ww.fairchildsemi.com
3
FDD8447L Rev.C www.fairchildsemi.com
3
FDD8447L Rev.C www.fairchildsemi.com
3
FDD8447L Rev.C 4 www.fairchildsemi.com
FDD8447L 40V N-Channel PowerTrench® MOSFET
FDD8447L Rev. 1.2 4 www.fairchildsemi.com
Typical Characteristics
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t
1
, TIME (sec)
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
R
θJA
(t) = r(t) * R
θJA
R
θJA
= 96°C/W
T
J
- T
A
= P * R
θJA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 13. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDD8447L Rev.C www.fairchildsemi.com
3
FDD8447L Rev.C www.fairchildsemi.com
3
FDD8447L Rev.C www.fairchildsemi.com
3
FDD8447L Rev.C www.fairchildsemi.com
3
FDD8447L Rev.C www.fairchildsemi.com
3
FDD8447L Rev.C www.fairchildsemi.com
3
FDD8447L 40V N-Channel PowerTrench® MOSFET
FDD8447L Rev.C1 4 www.fairchildsemi.com
FDD8447L Rev. 1.2 5 www.fairchildsemi.com
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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