AJT150 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2L FLG (A) The ASI AJT150 is a common base RF power transistor primarily designed for pulsed avionics applications such as, mode-s TCAS and JTIDS. A 4x .062 x 45 2xB C F E D G 2xR FEATURES: H J K I * 960-1215 MHz * Internal Input/Output Matching Network * PG = 7.5 dB at 150 W/ 1215 MHz * OmnigoldTM Metalization System * CB configuration, 35V DC operation L N DIM M IN IM UM M A XIM UM inches / m m inches / m m A .135 / 3.43 .145 / 3.68 B .100 / 2.54 .120 / 3.05 C .050 / 1.27 D .376 / 9.55 E .110 / 2.79 .130 / 3.30 F .395 / 10.03 .407 / 10.34 VCE 35 V .490 / 12.45 H 300 W TJ -65 C to +200 C TSTG -65 C to +150 C JC 0.57 C/W CHARACTERISTICS J .690 / 17.53 .710 / 18.03 K .890 / 22.61 .910 / 23.11 L .003 / 0.08 .006 / 0.18 M .052 / 1.32 .072 / 1.83 N .118 / 3.00 .131 / 3.33 .230 / 5.84 P ORDER CODE: ASI10548 TC = 25 C NONETEST CONDITIONS SYMBOL .510 / 12.95 .100 / 2.54 I PDISS .396 / 10.06 .193 / 4.90 G 16.5 A P M MAXIMUM RATINGS IC .040 x 45 BVCBO IC = 60 mA BVCES IC = 100 mA BVEBO IE = 10 mA ICES VBE = 35 V hFE VCE = 5.0 V PG C VCc = 35 V POUT = 150 W PIN = 26.7 V RBE = 10 IC = 5.0 A MINIMUM TYPICAL MAXIMUM V 55 V 3.5 V 20 f = 960 - 1215 MHz UNITS 55 7.5 40 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. 25 mA 200 --dB % REV. C 1/2 AJT150 FOUND. AJERROR! REFERENCE SOURCE NOT TYPICAL PERFORMANCE IMPEDANCE DATA: FREQUENCY 960 MHz 1050 MHz 1215 MHz Pin = 26.7 W Vcc = 35 V ZIN ZCL 2.1 + j3.8 1.2 + j2.5 1.7 + j2.4 3.8 - j3.6 3.0 - j2.4 2.0 - j2.5 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. C 1/2