A D V A N C E D S E M I C O N D U C T O R, I N C. REV. C
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/2
Specif i cations are subj ect to change wi thout notice.
CHARACTERISTICS TC = 25 °C
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BVCBO IC = 60 mA 55 V
BVCES IC = 100 mA RBE = 10 Ω 55 V
BVEBO IE = 10 mA 3.5 V
ICES VBE = 35 V 25 mA
hFE VCE = 5.0 V IC = 5.0 A 20 200 ---
PG
η
ηη
ηC VCc = 35 V POUT = 150 W f = 960 - 1215 MHz
PIN = 26.7 V
7.5
40 dB
%
NPN SILICON RF POWER TRANSISTOR
AJT150
DESCRIPTION:
The ASI AJT150 is a com m on base RF
power transistor primarily designed f or
pulsed avionics applications such as,
mode-s TCAS and JTIDS.
FEATURES:
• 960-1215 MHz
• Internal Input/Output Matching Network
• PG = 7.5 dB at 150 W/ 1215 MHz
• Omnigold™ Metalization System
• CB config uration, 35V DC operation
MAXIMUM RATINGS
IC 16.5 A
VCE 35 V
PDISS 300 W
TJ -65 °C to +200 °C
TSTG -65 °C to +150 °C
θ
θθ
θJC 0.57 °C/W
PACKAGE STYLE .400 2L FLG (A)
ORDER CODE: ASI10548
MINIMUM
inch es / m m
.100 / 2.54
.376 / 9.55
.050 / 1.27
.110 / 2.79
B
C
D
E
F
G
A
MAXIMUM
.120 / 3.05
.130 / 3.30
.396 / 10.06
inches / m m
.193 / 4.90
H
DIM
K
L
I
J
.490 / 12.45
.690 / 17.53
.003 / 0.08
.510 / 12.95
.710 / 18.03
.006 / 0.18
N
M.118 / 3.00 .131 / 3.33
.135 / 3.43 .145 / 3.68
.072 / 1.83.052 / 1.32
P .230 / 5.84
G
C
N
2xR
4x .062 x 45°
I
E
P
M
F
L
H
J
K
2xB
D
.040 x 45°
A
.100 / 2.54
.395 / 10.03 .407 / 10.34
.890 / 22.61 .910 / 23.11
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. C
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/2
AJERROR! REFERENCE SOURCE NOT FOUND.
Specif i cations are subj ect to change wi thout notice.
AJT150
TYPICAL PERFORMANCE
IMPEDANCE DATA:
FREQUENCY ZIN ZCL
960 MHz 2.1 + j3.8 3.8 – j3.6
1050 MHz 1.2 + j2.5 3.0 – j2.4
1215 MHz 1.7 + j2.4 2.0 – j2.5
Pin = 26.7 W
Vcc = 35 V
